DMG4435SSS

P-CHANNEL ENHANCEMENT MODE MOSFET

Features Mechanical Data

• Low On-Resistance • Case: SO-8
• Low Input Capacitance • Case Material: Molded Plastic, “Green” Molding Compound.
• Fast Switching Speed UL Flammability Classification Rating 94V-0
• Low Input/Output Leakage • Moisture Sensitivity: Level 1 per J-STD-020
• Lead Free By Design/RoHS Compliant (Note 1) • Terminal Connections: See Diagram Below
• "Green" Device (Note 2) • Marking Information: See Page 5
• Qualified to AEC-Q101 Standards for High Reliability • Ordering Information: See Page 5
• Weight: 0.072 grams (approximate)
NEW PRODUCT

S D

S D

S D

G D

Top View Top View

Internal Schematic

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source Voltage VDSS -30 V
Gate-Source Voltage VGSS ±25 V
Steady State TA = 25°C -7.3
Continuous Drain Current (Note 3) ID A
(VGS = -4.5) TA = 85°C -4.7
Pulsed Drain Current (Note 4) IDM -80 A

Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) PD 1.3 W
Thermal Resistance, Junction to Ambient @TA = 25°C RθJA 96.5 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on 1in. x 1in. FR-4 PCB with 2oz. Copper. The value in any given application depends on the user’s specific board design.
4. Repetitive rating, pulse width limited by junction temperature.

DMG4435SSS 1 of 6 March 2010

Document number: DS32041 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
 DMG4435SSS

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BVDSS -30 - - V VGS = 0V, ID = -1mA
Zero Gate Voltage Drain Current TJ = 25°C IDSS - - -1.0 μA VDS = -30V, VGS = 0V
Gate-Source Leakage IGSS - - ±100 nA VGS = ±25V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(th) -1.0 -1.7 -2.5 V VDS = VGS, ID = -250μA
NEW PRODUCT

13 16 VGS = -20V, ID = -11A

Static Drain-Source On-Resistance RDS (ON) - 15 20 mΩ VGS = -10V, ID = -10A
21 29 VGS = -5V, ID = -5A
Forward Transfer Admittance |Yfs| - 22 - S VDS = -5V, ID = -10A
Diode Forward Voltage VSD - -0.74 -1.0 V VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance Ciss - 1614 - pF
VDS = -15V, VGS = 0V,
Output Capacitance Coss - 226 - pF
f = 1.0MHz
Reverse Transfer Capacitance Crss - 214 - pF
Gate Resistance Rg - 6.8 - Ω VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge at 10V Qg - 35.4 - nC VGS = -10V, VDS = -15V, ID = -10A
Total Gate Charge at 5V Qg - 18.9 - nC
VGS = -5V, VDS = -15V,
Gate-Source Charge Qgs - 4.6 - nC
ID = -10A
Gate-Drain Charge Qgd - 5.7 - nC
Turn-On Delay Time tD(on) - 8.6 - ns
Turn-On Rise Time tr - 12.7 - ns VDS = -15V, VGS = -10V,
Turn-Off Delay Time tD(off) - 44.9 - ns RL = 1.5Ω, RGEN = 3Ω,
Turn-Off Fall Time tf - 22.8 - ns
Notes: 5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.

30 30
VGS = -10V

VDS = -5V
25 25
-ID, DRAIN CURRENT (A)

-ID, DRAIN CURRENT (A)

VGS = -4.5V
20 20
VGS = -4.0V

15 VGS = -3.5V 15

VGS = -3.0V
10 10
TA = 150°C
T A = 125°C
5 5 TA = 85°C
TA = 25°C
VGS = -2.2V VGS = -2.5V TA = -55°C
0 0
0 0.5 1 1.5 2 0 0.5 1 1.5 2 2.5 3 3.5 4
-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristic

DMG4435SSS 2 of 6 March 2010

Document number: DS32041 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
 DMG4435SSS

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.05 0.06

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

0.05 VGS = -4.5V
0.04

0.04
T A = 150°C
0.03
TA = 125°C
0.03
TA = 85°C
VGS = -4.5V
0.02
TA = 25°C
0.02
NEW PRODUCT

VGS = -10V TA = -55°C

0.01
0.01

0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
-ID, DRAIN-SOURCE CURRENT (A) -ID, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance Fig. 4 Typical On-Resistance
vs. Drain Current and Gate Voltage vs. Drain Current and Temperature

1.6 0.04

ON-RESISTANCE (NORMALIZED)
ON-RESISTANCE (NORMALIZED)

1.4
0.03
RDSON, DRAIN-SOURCE
RDSON, DRAIN-SOURCE

VGS = -4.5V
ID = -10A
VGS = -4.5V
1.2 ID = -10A
VGS = -10V
0.02
ID = -20A

1.0

VGS = -10V
0.01 ID = -20A
0.8

0.6 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature

3.0 30
-VGS(TH), GATE THRESHOLD VOLTAGE (V)

2.5 25
-IS, SOURCE CURRENT (A)

2.0 20
ID = -1mA

1.5 15 T A = 25°C
ID = -250µA

1.0 10

0.5 5

0 0
-50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2
TA, AMBIENT TEMPERATURE (°C) -VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current

DMG4435SSS 3 of 6 March 2010

Document number: DS32041 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
 DMG4435SSS

10,000 10,000
f = 1MHz

-IDSS, LEAKAGE CURRENT (nA)

TA = 150°C

1,000
Ciss
T A = 125°C
1,000

Coss 100
T A = 85°C
Crss

100
NEW PRODUCT

10
T A = 25°C

10 1
0 5 10 15 20 25 30 0 10 20 30
-VDS, DRAIN-SOURCE VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance Fig. 10 Typical Leakage Current vs. Drain-Source Voltage

10

9
VGS(TH), GATE-THRESHOLD VOLTAGE (V)

0
0 10 15 20 25 530 35 40
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate Threshold Voltage vs. Total Gate Charge

1
r(t), TRANSIENT THERMAL RESISTANCE

D = 0.7
D = 0.5

D = 0.3

0.1
D = 0.1
D = 0.9
D = 0.05

RθJA(t) = r(t) * RθJA

D = 0.02
RθJA = 98°C/W
0.01
D = 0.01
P(pk)
t1
D = 0.005
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response

DMG4435SSS 4 of 6 March 2010

Document number: DS32041 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
 DMG4435SSS

Ordering Information (Note 7)

Part Number Case Packaging

DMG4435SSS-13 SO-8 2500 / Tape & Reel
Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information
NEW PRODUCT

Logo
G4435SS Part no.
YY WW
Xth week: 01~53
Year: “09” = 2009

Package Outline Dimensions

SO-8
Dim Min Max
A - 1.75
A1 0.10 0.20
0.254

A2 1.30 1.50
E1 E
Gauge Plane A3 0.15 0.25
A1 Seating Plane b 0.3 0.5
L
D 4.85 4.95
Detail ‘A’ E 5.90 6.10
E1 3.85 3.95
7°~9°
e 1.27 Typ
h
45° h - 0.35
L 0.62 0.82
Detail ‘A’
A2 A A3 θ 0° 8°
All Dimensions in mm
e b
D

Suggested Pad Layout

Dimensions Value (in mm)

X 0.60
C1 Y 1.55
C1 5.4
C2 C2 1.27

DMG4435SSS 5 of 6 March 2010

Document number: DS32041 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
 DMG4435SSS

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
NEW PRODUCT

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2010, Diodes Incorporated

www.diodes.com

DMG4435SSS 6 of 6 March 2010

Document number: DS32041 Rev. 2 - 2 www.diodes.com © Diodes Incorporated