Advanced Power

Electronics Corp. AP9972GP/S-HF-3

N-channel Enhancement-mode Power MOSFET

Simple Drive Requirement

D
Low On-resistance BV DSS 60V
Fast Switching Performance RDS(ON) 18mΩ
G
RoHS-compliant, halogen-free ID 60A
S

Description
Advanced Power MOSFETs from APEC provide the designer with the best G
combination of fast switching, low on-resistance and cost-effectiveness. D
S TO-263 (S)
The AP9972GS-HF-3 is in the TO-263 package, which is widely used
for commercial and industrial surface-mount applications, and is well
suited for low voltage applications such as DC/DC converters.
The AP9972GP-HF-3 is in the TO-220 through-hole package which is
used where a small PCB footprint or an attached heatsink is required.
G TO-220 (P)
D
Absolute Maximum Ratings S

Symbol Parameter Rating Units

VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage ±25 V
ID at TC=25°C Continuous Drain Current 60 A
ID at TC=100°C Continuous Drain Current 38 A
1
IDM Pulsed Drain Current 230 A
PD at TC=25°C Total Power Dissipation 89 W
Linear Derating Factor 0.7 W/°C
3
EAS Single Pulse Avalanche Energy 45 mJ
3
IAR Avalanche Current 30 A
TSTG Storage Temperature Range -55 to 150 °C
TJ Operating Junction Temperature Range -55 to 150 °C

Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 1.4 °C/W
4
Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 40 °C/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 62 °C/W

Ordering Information
AP9972GS-HF-3TR RoHS-compliant TO-263, shipped on tape and reel (800 pcs/reel)

AP9972GP-HF-3TB RoHS-compliant TO-220, shipped in tubes

©2010 Advanced Power Electronics Corp. USA 200906196-3 1/6

www.a-powerusa.com
 Advanced Power
Electronics Corp. AP9972GP/S-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V
∆ BV DSS/∆ Tj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA - 0.06 - V/°C
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=35A - - 18 mΩ
VGS=4.5V, ID=25A - - 22 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=35A - 55 - S
IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA
Drain-Source Leakage Current (T j=125oC) VDS=48V ,VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=±25V, VDS=0V - - ±100 nA
2
Qg Total Gate Charge ID=35A - 32 51 nC
Qgs Gate-Source Charge VDS=48V - 8 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 20 - nC
2
td(on) Turn-on Delay Time VDS=30V - 11 - ns
tr Rise Time ID=35A - 58 - ns
td(off) Turn-off Delay Time RG=3.3Ω , VGS=10V - 45 - ns
tf Fall Time RD=0.86Ω - 80 - ns
Ciss Input Capacitance VGS=0V - 3170 5070 pF
Coss Output Capacitance VDS=25V - 280 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 230 - pF
Rg Gate Resistance f=1.0MHz - 1.7 - Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=35A, VGS=0V - - 1.2 V
2
trr Reverse Recovery Time IS=35A, VGS=0V, - 50 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 48 - nC

Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse test
3.Starting T j=25°C , VDD=30V , L=100uH , RG=25Ω , IAS=30A.
4.Surface mounted on 1 in2 copper pad of FR4 board

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

©2010 Advanced Power Electronics Corp. USA 2/6

www.a-powerusa.com
 Advanced Power
Electronics Corp. AP9972GP/S-HF-3
Typical Electrical Characteristics
200 150
10V
T C =25 C
o o
T C = 150 C 10V
7.0V
7.0V
ID , Drain Current (A)

150

ID , Drain Current (A)

100
5.0V
5.0V

100
4.5V
4.5V

50

50
V G =3.0V V G =3.0V

0 0
0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

20 1.6

I D = 25 A I D =35A
T C =25 o C 1.4
V G =10V
Normalized RDS(ON)

18
RDS(ON) (mΩ )

1.2

1.0

16

0.8

14 0.6
2 4 6 8 10 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance

vs. Junction Temperature
20 1.7

15
Normalized VGS(th) (V)

1.2
T j =150 o C T j =25 o C
IS(A)

10

0.7

0 0.2
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs.

Reverse Diode Junction Temperature

©2010 Advanced Power Electronics Corp. USA 3/6

www.a-powerusa.com
 Advanced Power
Electronics Corp. AP9972GP/S-HF-3
Typical Electrical Characteristics (cont.)
f=1.0MHz
12 10000

I D = 35 A
VGS , Gate to Source Voltage (V)

10

V DS = 30 V C iss

8
V DS = 38 V
V DS = 48 V

C (pF)
6 1000

C oss
2
C rss

0 100
0 20 40 60 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

1000 1
Normalized Thermal Response (Rthjc)

Duty factor=0.5

100 0.2
ID (A)

0.1

100us 0.1

0.05

PDM
10 t
0.02
T
1ms 0.01

10ms Duty factor = t/T

T C =25 o C Peak Tj = PDM x Rthjc + T C
100ms Single Pulse
Single Pulse
DC
1 0.01
0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

100

VG
V DS =5V
80
ID , Drain Current (A)

T j =25 o C T j =150 o C QG
4.5V
60

QGS QGD
40

20

Charge Q
0
0 2 4 6 8

V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform

©2010 Advanced Power Electronics Corp. USA 4/6

www.a-powerusa.com
 Advanced Power
Electronics Corp. AP9972GP/S-HF-3
Package Dimensions: TO-220
E1

E A
SYMBOLS Millimeters
φ L1 MIN NOM MAX
L2 A 4.25 4.48 4.70
L5 b 0.65 0.80 0.90
c1
b1 1.15 1.38 1.60
c 0.40 0.50 0.60
c1 1.00 1.20 1.40
E 9.70 10.00 10.40
D E1 --- --- 11.50
L4 e ---- 2.54 ----
L 12.70 13.60 14.50
L1 2.60 2.80 3.00
b1 L2 1.00 1.40 1.80
L3 L3 2.6 3.10 3.6
L4 14.70 15.50 16
L5 6.30 6.50 6.70
L
φ 3.50 3.60 3.70
D 8.40 8.90 9.40

b
c
1. All dimensions are in millimeters.
2. Dimensions do not include mold protrusions.

Marking Information: TO-220

Product: AP9972

Package code
GP = RoHS-compliant halogen-free TO-220
9972GP

YWWSSS Date/lot code (YWWSSS)

Y: Last digit of the year
WW: Work week
SSS: Lot code sequence

©2010 Advanced Power Electronics Corp. USA 5/6

www.a-powerusa.com
 Advanced Power
Electronics Corp. AP9972GP/S-HF-3
Package Dimensions: TO-263

E
SYMBOLS Millimeters
MIN NOM MAX
A 4.25 4.75 5.20
A1 0.00 0.15 0.30
A2 2.20 2.45 2.70
D b 0.70 0.90 1.10
b1 1.07 1.27 1.47
c 0.30 0.45 0.60
c1 1.15 1.30 1.45
L2 b1 D 8.30 8.90 9.40
L3 E 9.70 10.10 10.50
e 2.04 2.54 3.04
b
L2 ----- 1.50 -----
L3 4.50 4.90 5.30

e L4 L4 ----- 1.50 ----

A
1. All dimensions are in millimeters.
θ 2. Dimensions do not include mold protrusions.

c .
c1
A1

Marking Information: TO-263

Product: AP9972
9972GS Package code:
GS = RoHS-compliant halogen-free TO-263

YWWSSS Date Code (YWWSSS)

Y : Last digit of the year
WW : Work week
SSS : Lot code sequence

©2010 Advanced Power Electronics Corp. USA 6/6

www.a-powerusa.com