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Mysuru Royal Institute of Technology, Mandya.: Question Bank-1

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41 views1 page

Mysuru Royal Institute of Technology, Mandya.: Question Bank-1

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chaitragowda213_4732
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Mysuru Royal Institute of Technology, Mandya.

Department of Electronics & Communication Engineering.


Question Bank-1
Subject:VLSI Design. Code: 17EC63

1. With neat sketches explain the CMOS P-well process steps to fabricate a CMOS Inverter and write
the mask sequence.
2. With neat sketches explain the CMOS n-well process steps to fabricate a CMOS inverter.
3. Derive the CMOS inverter DC characteristics graphically from p device and n device
characteristics and show all operating regions.
Or
Derive a first order expression relating the current and voltage (I-V) for an NMOS
Transistor in Linear region.
Or
Derive the expression for drain current in cut-off, linear and saturation region for nMOS transistor.
Or
Using graphical approach explain the DC characteristics of a CMOS inverter.
Or
Explain the transfer plot of CMOS inverter with necessary expression for I ds in each region.
4. What are the advantages of BiCMOS process over CMOS technology.
5. Explain the nMOS enhancement mode transistor operation for different values of Vgs and Vds.
or
Explain the pMOS enhancement mode transistor operation for different values of Vgs and Vds.
or
With Suitable diagrams explain the three regions of operation of Enhancement mode NMOS
transistor.
6. What do you mean by static load inverters? Derive the output voltage for pseudo Inverter by
discussing its dc characteristics.
7. Explain only two non ideal I-V effects in a MOS device.
Or
Discuss the effect of channel length modulation on the performance of an nMOS transistor.
Or
Explain body effect as non ideal I-V effects in a MOS device.
Or
With the mathematical equations, explain velocity saturation and mobility degradation effect
due to increase in saturation current.
8. Explain nMOS fabrication. Compare CMOS and bipolar technologies.
9. Explain the transmission gate operation and Explain tristate inverter.
10. Explain the influence of β n / β pon the DC transfer characteristics of inverter.
11. What is a noise margin? Obtain the values of V IL, V IH V OL ∧V OH from transfer characteristics of a
typical inverter.
12. Discuss the different in the thermal sequence between nMOS and CMOS processes
13. Distinguish between enhancement and depletion mode operation of MOSFET’s
14. Explain with diagram, the main steps in the twin-tub process.
15. What is body effect? Which parameters are responsible for it?
16. Explain Bicmos fabrication in an n-well process.
17. With the transfer characteristics of skewed inverter, explain the beta ratio effects.

Faculty Name: CHAITRA G D


MRIT, Mandya

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