Electronic Devices
Ninth Edition
Floyd
Chapter 1
Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458.
Thomas L. Floyd All rights reserved.
Summary
Bohr Atom
The Bohr model of the atom is that electrons can circle
the nucleus only in specific orbits, which correspond to
Energy
discrete energy levels called shells.
The atomic number is the
number of protons in the nucleus.
The outermost occupied shell is
called the valence shell and
electrons that occupy this shell are
called valence electrons. Nucleus Shell 1
Shell 2
Conductors
Materials can be classified by their ability to conduct
electricity. This ability is related to the valence electrons.
Core (+1)
Copper is an example of an
excellent conductor. It has only
one electron in its valence band,
which can easily escape to the
+29
conduction band, leaving behind a
positive ion (the core). Like all
metals, copper has many free
electrons which are loosely held
by the attraction of the positive
metal ions.
Insulators
Insulators have tightly bound electrons with few
electrons available for conduction.
Nonmetals, such as glass, air, paper, and rubber are excellent
insulators and widely used in electronics. Even these materials can
break down and conduct
electricity if the voltage is
high enough.
Semiconductors
Semiconductors are between conductors and insulators
in their ability to conduct electricity.
Core (+4)
Silicon is an example of a single
element semiconductor. It has four
+14
electrons in its valence band.
+4
Unlike metals, silicon forms strong covalent
bonds (shared electrons) with its neighbors. +4 +4 +4
Intrinsic silicon is a poor conductor because most
of the electrons are bound in the crystal and take
+4
part in forming the bonds between atoms.
Semiconductors
In intrinsic silicon, a few electrons can jump the energy
gap between the valence and conduction band. Having
moved into the conduction band, a “hole” (vacancy) is
left in the crystal structure.
Conduction Free
band electron
Energy gap Heat
Energy
Valence Hole
band
Electron-hole pair
Semiconductors
Within the crystalline structure, there are two types
of charge movement (current):
1) The conduction band electrons are free to move under the
influence of an electric field.
2) The bound (valence) electrons move between atoms,
effectively moving holes from one atom to another as
illustrated. Holes act like positive charges, with their own
mobility. Holes Electrons
Si Si Si
Semiconductors
Certain impurities will change the conductivity of
silicon. An impurity such as Antimony has an electron
that is not part of the bonding electrons so is free. This
creates an n-material.
Free (conduction) electron
Si from Sb atom
Where on the periodic table
would you expect to find another
Si Sb Si
element that could be used as an
impurity to create an n-material?
Elements above or below Sb will have Si
the same valence electron structure.
Semiconductors
An impurity such as boron leaves a vacancy in the
valence band, creating a p-material. Both p- and n-
materials have energy levels that are different than
intrinsic silicon.
Si Hole from
B atom
Si B Si
Si
The pn junction
A p- and an n-material together form a pn junction.
When the junction is formed, conduction electrons move to the p-
region, and fall into holes. Filling a hole makes a negative ion and
leaves behind a positive ion in the n-region. This creates a thin
region that is depleted of free charges at the boundary.
Depletion region
p region n region
What process stops the migration of – +
–
charge across the boundary? –
+
+
– +
A potential is built up (called the – +
– +
barrier potential) that prevents further – +
charge migration. – +
The pn junction
The energy diagram for the n-region shows a lower
potential than for the p-region. Energy
Conduction
band
Why do you think that the
Valence
energy level in the n- region band
is lower than the p-region?
0
n region
The n-region tends to have filled valence p region Depletion
shells; conduction electrons are shielded by region
these electrons, so they are further away
from the nucleus and have less energy.
Diodes
A diode is a semiconductor device with a single pn
junction and metal connections to leads. It has the
ability to pass current in only one direction.
p n
Depletion
region
Forward bias
Forward bias is the condition which allows current in
the diode. The bias voltage must be greater than the
barrier potential.
I F (mA)
V
+ F–
C
IF
–
R
+ VBIAS
Knee
+ – A B
VF
0
0 0.7 V
Reverse bias
Reverse bias is the condition in which current is
blocked.
VBR 0
VR 0
VBIAS Knee
– +
I=0A
R
VBIAS
– +
IR
Approximations
Three diode approximations are:
IF IF IF
VR VF VR VF VR VF
0.7 V 0.7 V
IR IR IR
Ideal Practical Complete
In addition, the complete model includes the effect of a large reverse
resistance that accounts for a tiny current when reverse-biased.
Example
3.3 kW
+
VBIAS 12 V
–
VR = VBIAS − 0.7 V = 12 V − 0.7 V = 11.3 V
VR 11.3 V
I= = = 3.4 mA
R 3.3 kW
Typical diode packages
Some common configurations are
K
K A
K
A
A K
A K
A
K
K
A
K A
K K
A A
K
K
A
Selected Key Terms
Electron The basic particle of negative electrical charge.
Valence Related to the outer shell of an atom.
Free Electron An electron that has acquired enough energy to
break away from the valence band of the parent
atom; also called a conduction electron.
Conductor A material that easily conducts electrical current.
Insulator A material that does not normally conduct
current.
Selected Key Terms
Semiconductor A material that lies between conductors and
insulators in its conductive properties.
Crystal A solid material in which the atoms are
arranged in a symmetrical pattern.
Hole The absence of an electron in the valence
band of an atom in a semiconductor crystal.
Diode A semiconductor device with a single pn
junction that conducts current in one direction
only.
Selected Key Terms
PN junction The boundary between two different types of
semiconductive material.
Barrier The amount of voltage required to produce
Potential full conduction across the pn junction in
forward bias.
Forward bias The condition in which a diode conducts
current.
Reverse bias The condition in which a diode prevents
current.
