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K.G.R.L. College (Autonomous), Bhimavaram: UNIT - II: (12hrs)

1. The document outlines the syllabus for a course on electronics devices and circuits. It covers 5 units: (i) PN junction diodes and their characteristics, (ii) bipolar junction transistors and biasing, (iii) field effect transistors, UJT, and SCR, (iv) photoelectric devices, and (v) power supplies. 2. Key topics include the construction and V-I characteristics of PN junction diodes, configurations and biasing of BJTs, characteristics of MOSFETs, structure and operation of devices like LEDs, solar cells, and LDRs. Rectification techniques like half wave, full wave and bridge rectifiers are also covered along with

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63 views

K.G.R.L. College (Autonomous), Bhimavaram: UNIT - II: (12hrs)

1. The document outlines the syllabus for a course on electronics devices and circuits. It covers 5 units: (i) PN junction diodes and their characteristics, (ii) bipolar junction transistors and biasing, (iii) field effect transistors, UJT, and SCR, (iv) photoelectric devices, and (v) power supplies. 2. Key topics include the construction and V-I characteristics of PN junction diodes, configurations and biasing of BJTs, characteristics of MOSFETs, structure and operation of devices like LEDs, solar cells, and LDRs. Rectification techniques like half wave, full wave and bridge rectifiers are also covered along with

Uploaded by

srinidhi2all
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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CBCS – Ele 2304

K.G.R.L. COLLEGE (AUTONOMOUS), BHIMAVARAM


Accredited by NAAC with ‘A’ Grade
(Affiliated to Adikavi Nannaya University)
I – B.Sc. Degree Examination, Semester – II
Part – II : ELECTRONICS
Paper – II : Electronics Devices & Circuits
CBCS Syllabus w.e.f.2020-2021 admitted batch

UNIT 1: (12Hrs)
PN JUNCTION DIODES:
P-N junction Diode, Depletion region, Barrier Potential, Working in Forward and Reverse bias
condition – Junction capacitance, Diode current equation(no derivation)– Effect of temperature on
reverse saturation current – construction, working, V-I characteristics and simple applications of
varactor diode, Zener diode, Tunnel diode and Schottky diode.

UNIT –II:(12hrs)
BIPOLAR JUNCTION TRANSISTOR AND ITS BIASING: (D.C)
Introduction, Transistor Construction, Operation, and characteristics of CB, CE, and CC –
Configurations. Complete hybrid equivalent model(CE only) , Transistor as a switch.
BJT Biasing: Fixed-Bias Circuit, Voltage-Divider Bias
UNIT-III:(16hrs)
FIELD EFFECT TRANSISTORS , UJT and SCR:
Introduction, Construction, Operation and Characteristics of FET/JFET, Drain and Transfer
characteristics, Depletion-type, and Enhancement-Type MOSFETs. UJT construction-working, V-I
characteristics, UJT as a Relaxation oscillator.Structure and Characteristics of SCR.

UNIT IV: (08hrs)


PHOTO ELECTRIC DEVICES:
Light-Emitting Diodes (LEDs), Photo Conductive Cells, Photo diode, Photo transistors, Structure and
operation of LDR, Solar cell.
UNIT-V:(12hrs)
POWER SUPPLIES:
Rectifiers::Half wave ,full wave and bridge rectifiers-Efficiency-ripple factor- Regulation, Types of
filter-choke input(inductor) filter, shunt capacitor filter. Transistor Series and Shunt Voltage
Regulators.Three terminal fixed voltage I.C.regulators(78XX and &79XX)-Principle and working of
SMPS(switch mode power supplies)

Note:- Topics mentioned in BOLD in every UNIT are additional inputs.

TEXT BOOKS:
1. Electronic Devices and Circuit Theory --- Robert L. Boylestad & Louis Nashelsky.
2. Electronic Devices and Circuits I – T.L.Floyd- PHI Fifth Edition

REFERENCE BOOKS:
1. Integrated Electronics – Millmam & Halkias.
2. Electronic Devices & Circuits – Bogart.
3. Sedha R.S., A Text Book Of Applied Electronics, S.Chand & Company Ltd

***
CBCS – Ele 2304
K.G.R.L. COLLEGE (AUTONOMOUS), BHIMAVARAM
Accredited by NAAC with ‘A’ Grade
(Affiliated to Adikavi Nannaya University)
I – B.Sc. Degree Examination, Semester – II
Part – II : ELECTRONICS
Paper – II : Electronics Devices & Circuits
CBCS Model Question Paper w.e.f.2020-2021 admitted batch

Time: 3 hrs. Max.Marks: 70


SECTION – A
I. Answer any FIVE questions from the following. 5 x 10 = 50 M
1. Describe the construction and working of the P-N junction diode and draw the V-I
characteristics.
2. Describe the construction and working of Bipolar junction Transistor.

3. Derive the necessary equations for the BJT fixed biasing method and voltage divider bias.

4. Discuss the construction of MOSFET and Briefly explain the Types of MOSFET with the help of neat
Diagrams.

5. Explain briefly about Light emitting Diode

6. Derive the necessary equations for Diode current equation

7. Explain about Structure and Operation of LDR and draw the characteristics.

8. With neat circuit diagram explain the working of bridge rectifier.and Write the advantages of it

SECTION – B
II. Answer any FIVE questions from the following. 5 x 4 = 20 M
9. Define Diode and Give some applications of Diode.
10. Explain the transistor as a switch.
11. Effects of temperature on reverse saturation current.
12. Describe the construction of the Solar Cell.
13. Draw the structure of SCR.
14. Explain about Full wave Rectifier and give some advantages of it.
15. Explain the classifications of transistor.
16. Explain the types of filter choke.
***

Guidelines to paper setters:


1. All questions should be confirmed to syllabus.
2. Each chapter contains atleast One essay and one short question.

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