OpenRAN RUs Power Making Digital Predistortion Thermal Analysis Paves Way

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March 2022 VOLUME 61, ISSUE 1

IN THIS ISSUE 10
FEATURES
10 How to Make a Digital Predistortion
Solution Practical and Relevant
For digital predistortion implementations, static
quantitative data fails to capture many challenges,
risks, and performance tradeoffs of real-world
scenarios. Here’s how to get beyond fundamentals
and into considerations for complex 5G
environments.

20
20 Thermal Analysis is Vital for High-Power
MMIC, MCM, and RF PCB Apps
ConEGTPUCDQWVRQYGTCORNKƂGTJGCVKPICPF
operating temps aren’t new as they affect device
reliability and performance. However, RF designers
must broaden the scope of thermal management
to include the package, PCB, and surrounding
electronics.

25 COVER STORY:
RFICs and MMICs Aim at SWaP Targets
Designers of aerospace and defense electronic
U[UVGOUNQQMVQOQTGGHƂEKGPV4(+%UCPF//+%U
with increased functionality to achieve solutions
with ever-smaller SWaP.

NEWS & COLUMNS

2 EDITORIAL
25
Having Passed a Milestone,
We’re Taking a New Tack

6 NEWS
JOIN US ONLINE

32
30 ADVERTISERS INDEX
follow us @MicrowavesRF

32 NEW PRODUCTS become a fan at

facebook.com/microwavesRF

COVER PHOTO CREDITS:

Photo 7453689 © Imagecom | Dreamstime.com and Photo 500752309 iStock | Getty Images Plus

GO TO MWRF.COM 1
 Editorial
DAVID MALINIAK | Editor
[email protected]

Having Passed a Milestone,

We’re Taking a New Tack
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enhance it.

I
n November, Microwaves & RF marked its 60th anniversary of
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36V, 20dB. Both available now. are famous, such as the New York Times’s “All the News That’s
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polyfet rf devices We’ve changed our tagline to reflect these enhancements
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 OCTAVE BAND LOW NOISE AMPLIFIERS
Model No. Freq (GHz) Gain MIN Noise Figure Power -out @ P1-d 3rd Order ICP VSWR
CA01-2110 0.5-1.0 28 1.0 MAX, 0.7 TYP +10 MIN +20 d m 2.0:1
CA12-2110 1.0-2.0 30 1.0 MAX, 0.7 TYP +10 MIN +20 d m 2.0:1
CA24-2111 2.0-4.0 29 1.1 MAX, 0.95 TYP +10 MIN +20 d m 2.0:1
CA48-2111 4.0-8.0 29 1.3 MAX, 1.0 TYP +10 MIN +20 d m 2.0:1
CA812-3111 8.0-12.0 27 1.6 MAX, 1.4 TYP +10 MIN +20 d m 2.0:1
CA1218-4111 12.0-18.0 25 1.9 MAX, 1.7 TYP +10 MIN +20 d m 2.0:1
CA1826-2110 18.0-26.5 32 3.0 MAX, 2.5 TYP +10 MIN +20 d m 2.0:1
NARROW BAND LOW NOISE AND MEDIUM POWER AMPLIFIERS
CA01-2111 0.4 - 0.5 28 0.6 MAX, 0.4 TYP +10 MIN +20 d m 2.0:1
CA01-2113 0.8 - 1.0 28 0.6 MAX, 0.4 TYP +10 MIN +20 d m 2.0:1
CA12-3117 1.2 - 1.6 25 0.6 MAX, 0.4 TYP +10 MIN +20 d m 2.0:1
CA23-3111 2.2 - 2.4 30 0.6 MAX, 0.45 TYP +10 MIN +20 d m 2.0:1
CA23-3116 2.7 - 2.9 29 0.7 MAX, 0.5 TYP +10 MIN +20 d m 2.0:1
CA34-2110 3.7 - 4.2 28 1.0 MAX, 0.5 TYP +10 MIN +20 d m 2.0:1
CA56-3110 5.4 - 5.9 40 1.0 MAX, 0.5 TYP +10 MIN +20 d m 2.0:1
CA78-4110 7.25 - 7.75 32 1.2 MAX, 1.0 TYP +10 MIN +20 d m 2.0:1
CA910-3110 9.0 - 10.6 25 1.4 MAX, 1.2 TYP +10 MIN +20 d m 2.0:1
CA1315-3110 13.75 - 15.4 25 1.6 MAX, 1.4 TYP +10 MIN +20 d m 2.0:1
CA12-3114 1.35 - 1.85 30 4.0 MAX, 3.0 TYP +33 MIN +41 d m 2.0:1
CA34-6116 3.1 - 3.5 40 4.5 MAX, 3.5 TYP +35 MIN +43 d m 2.0:1
CA56-5114 5.9 - 6.4 30 5.0 MAX, 4.0 TYP +30 MIN +40 d m 2.0:1
CA812-6115 8.0 - 12.0 30 4.5 MAX, 3.5 TYP +30 MIN +40 d m 2.0:1
CA812-6116 8.0 - 12.0 30 5.0 MAX, 4.0 TYP +33 MIN +41 d m 2.0:1
CA1213-7110 12.2 - 13.25 28 6.0 MAX, 5.5 TYP +33 MIN +42 d m 2.0:1
CA1415-7110 14.0 - 15.0 30 5.0 MAX, 4.0 TYP +30 MIN +40 d m 2.0:1
CA1722-4110 17.0 - 22.0 25 3.5 MAX, 2.8 TYP +21 MIN +31 d m 2.0:1
ULTRA-BROADBAND & MULTI-OCTAVE BAND AMPLIFIERS
Model No. Freq (GHz) Gain MIN Noise Figure Power -out @ P1-d 3rd Order ICP VSWR
CA0102-3111 0.1-2.0 28 1.6 Max, 1.2 TYP +10 MIN +20 d m 2.0:1
CA0106-3111 0.1-6.0 28 1.9 Max, 1.5 TYP +10 MIN +20 d m 2.0:1
CA0108-3110 0.1-8.0 26 2.2 Max, 1.8 TYP +10 MIN +20 d m 2.0:1
CA0108-4112 0.1-8.0 32 3.0 MAX, 1.8 TYP +22 MIN +32 d m 2.0:1
CA02-3112 0.5-2.0 36 4.5 MAX, 2.5 TYP +30 MIN +40 d m 2.0:1
CA26-3110 2.0-6.0 26 2.0 MAX, 1.5 TYP +10 MIN +20 d m 2.0:1
CA26-4114 2.0-6.0 22 5.0 MAX, 3.5 TYP +30 MIN +40 d m 2.0:1
CA618-4112 6.0-18.0 25 5.0 MAX, 3.5 TYP +23 MIN +33 d m 2.0:1
CA618-6114 6.0-18.0 35 5.0 MAX, 3.5 TYP +30 MIN +40 d m 2.0:1
CA218-4116 2.0-18.0 30 3.5 MAX, 2.8 TYP +10 MIN +20 d m 2.0:1
CA218-4110 2.0-18.0 30 5.0 MAX, 3.5 TYP +20 MIN +30 d m 2.0:1
CA218-4112 2.0-18.0 29 5.0 MAX, 3.5 TYP +24 MIN +34 d m 2.0:1
LIMITING AMPLIFIERS
Model No. Freq (GHz) Input Dynamic Range Output Power Range Psat VSWR
CLA24-4001 2.0 - 4.0 +/- 1.5 MAX 2.0:1
CLA26-8001 2.0 - 6.0 +/- 1.5 MAX 2.0:1
CLA712-5001 7.0 - 12.4 +/- 1.5 MAX 2.0:1
CLA618-1201 6.0 - 18.0 +/- 1.5 MAX 2.0:1
AMPLIFIERS WITH INTEGRATED GAIN ATTENUATION
Model No. Freq (GHz) Gain MIN Noise Figure Power -out @ P1-d Gain Attenuation Range VSWR
CA001-2511A 0.025-0.150 21 5.0 MAX, 3.5 TYP +12 MIN MIN 2.0:1
CA05-3110A 0.5-5.5 23 2.5 MAX, 1.5 TYP +18 MIN 2.0:1
CA56-3110A 5.85-6.425 28 2.5 MAX, 1.5 TYP +16 MIN 1.8:1
CA612-4110A 6.0-12.0 24 2.5 MAX, 1.5 TYP +12 MIN 1.9:1
CA1315-4110A 13.75-15.4 25 2.2 MAX, 1.6 TYP +16 MIN 1.8:1
CA1518-4110A 15.0-18.0 30 3.0 MAX, 2.0 TYP +18 MIN 1.85:1
LOW FREQUENCY AMPLIFIERS
Model No. Freq (GHz) Gain MIN Power -out @ P1-d 3rd Order ICP VSWR
CA001-2110 0.01-0.10 18 4.0 MAX, 2.2 TYP +10 MIN 2.0:1
CA001-2211 0.04-0.15 24 3.5 MAX, 2.2 TYP +13 MIN 2.0:1
CA001-2215 0.04-0.15 23 4.0 MAX, 2.2 TYP +23 MIN 2.0:1
CA001-3113 0.01-1.0 28 4.0 MAX, 2.8 TYP +17 MIN 2.0:1
CA002-3114 0.01-2.0 27 4.0 MAX, 2.8 TYP +20 MIN 2.0:1
CA003-3116 0.01-3.0 18 4.0 MAX, 2.8 TYP +25 MIN 2.0:1
CA004-3112 0.01-4.0 32 4.0 MAX, 2.8 TYP +15 MIN 2.0:1
CIAO Wireless can easily modify any of its standard models to meet your "exact" requirements at the Catalog Pricing.
Visit our web site at www.ciaowireless.com for our complete product offering.

Ciao Wireless, Inc. 4 0 0 0 V i a P e s c a d o r, C a m a r i l l o , C A 9 3 0 1 2

Tel (805) 389-3224 Fax (805) 389-3629 [email protected]
 Featured
New
Product

Benetel’s Outdoor 5G
OpenRAN RUs Target
Private and Public Networks
The Overview
To bring 5G capacity to private,
campus, and industrial networks as
well as rural networks and public
hotspots, Benetel has expanded its
range of radio units (RUs) through
the introduction of the RAN650.
This latest RU is intended to bring Benetel
5G capacity to private, campus and
industrial networks, as well as rural networks and public hotspots.

Who Needs It and Why?

In Benetel’s reckoning, a broad array of verticals is addressable with the RAN650
O-RU. They’ll be applicable in some countries that are opening new spectrum for 5G
private networks in industrial, campus, or smart city use cases. The latter is an exercise
in building a base infrastructure, and of municipal authorities examining how citizens
will use it and how to leverage the infrastructure in novel ways. With regard to 5G
hotspots on campuses in various venues, both Benetel’s earlier RAN550 indoor O-RUs
and the new outdoor O-RUs are applicable. For rural broadband, the RAN650 O-RU
represents an opportunity to bring high-speed internet into rural areas.

Under the Hood

In the RAN650 O-RU, a 4T4R antenna arrangement is featured with up to 5 W of
output power being delivered per antenna port (equating to 20 W in total). The 7.2x
functional split employed will help minimize the costs associated with radio access
network implementations, while support for 100 MHz of instantaneous bandwidth
will enable maximum coverage to be attained.
The O-RU can be deployed in either a Cat A- or Cat-B-based configuration (using
selected distributed units), thereby providing flexibility to address radio access network
architectures. To attain to its high performance levels and versatility, each RU incorporates
an Intel Arria 10 FPGA alongside an Analog Devices’ ADRV9029 4T4R transceiver with
integrated digital predistortion (DPD). The initial version of the RAN650 covers the
n77u (3.7 to 4.2 GHz) frequency range. An n78 variant (3.3 to 3.8 GHz) will be made
available in the second quarter of 2022.
The RAN650 RU runs off a 48-V supply and has typical power consumption of
100 W. Its robust IP65-rated enclosure withstands extremely challenging outdoor
conditions. The unit supports an operational temperature range from -33°C to +45°C.
The RAN650 complements Benetel’s existing OpenRAN portfolio, which includes
the RAN550 indoor 5G RU that the company announced back in late 2020. Active
network trials are already being conducted on the Benetel RAN650 by a handful of
pilot customers. „

MARCH 2022 MICROWAVES & RF

News

Collaboration to Improve 5G mmWave Cellular Coverage

LITEPOINT ANNOUNCED A TECHNOLOGY to support all 5G FR2 frequencies within the radio technologies and allows for real-time RF
development partnership with Sivers for its 23- to 45-GHz frequency range. All signal parametric analysis for small-cell products.
5G mmWave Antenna-in-Package (AiP) generation, analysis, processing, and RF Sivers’s ECLIPSE3741 is a highly integrat-
products. The fully integrated IQgig-5G is a front-end switching are self-contained inside a ed 5G beamformer phased-array Antenna
versatile multiband mmWave non-signaling single chassis. The test system enables small- in Package (AiP) module. It combines mul-
test solution presented as the first of its kind cell waveform generation and analysis for 5G tiple Sivers RFSOI beamforming front-end
integrated circuits with a 16-element (4x4)
antenna array. Covering FR2 band, n260 from
37.0 to 41.0 GHz, it offers exceptionally high
linear output power, efficiency, and extreme
integration. This AiP module is designed to
enable Ȝ/2 wavelength antenna lattice spac-
ing when tiled together to support higher-
power applications. It also has been exten-
sively optimized for heat management. „

60-GHz CMOS Radio

Chip and Phased Antenna
Array Streamlines 5G
Deployments
PHARROWTECH LAUNCHED THE PTR1060,
Frequency I.L.(dB) Coupling Directivity VSWR Model
presented as the first IEEE 802.11ay-com-
Range min. Flatness max. (dB) min. max. Number
pliant CMOS RF chip for indoor and out-
0.5-2.0 GHz 0.35 ± 0.75 dB 23 1.20:1 CS*-02
1.0-4.0 GHz 0.35 ± 0.75 dB 23 1.20:1 CS*-04 door wireless use cases that supports the
0.5-6.0 GHz 1.00 ± 0.80 dB 15 1.50:1 CS10-24 full 57- to 71-GHz bandwidth. Addressing
2.0-8.0 GHz 0.35 ± 0.40 dB 20 1.25:1 CS*-09 Fixed Wireless Access (FWA) deployments,
0.5-12.0 GHz 1.00 ± 0.80 dB 15 1.50:1 CS*-19
5G and Wi-Fi infrastructure backhauling, and
1.0-18.0 GHz 0.90 ± 0.50 dB 15 12 1.50:1 CS*-18 next-gen IoT devices, the solution streamlines
2.0-18.0 GHz 0.80 ± 0.50 dB 15 12 1.50:1 CS*-15 the design process and reduces total system
4.0-18.0 GHz 0.60 ± 0.50 dB 15 12 1.40:1 CS*-16
8.0-20.0 GHz 1.00 ± 0.80 dB 12 1.50:1 CS*-21 cost, with an MCU allowing on-chip calibra-
6.0-26.5 GHz 0.70 ± 0.80 dB 13 1.55:1 CS20-50 tion and customization for specific apps.
1.0-40.0 GHz 1.60 ± 1.50 dB 10 1.80:1 CS20-53 The PTM1060 (RFM) phased-array
2.0-40.0 GHz 1.60 ± 1.00 dB 10 1.80:1 CS20-52
6.0-40.0 GHz 1.20 ± 1.00 dB 10 1.70:1 CS10-51 antenna module includes the PTR1060, and
6.0-50.0 GHz 1.60 ± 1.00 dB 10 2.00:1 CS20-54 when combined with Renesas’ RWM6050
6.0-60.0 GHz 1.80 ± 1.00 dB 07 2.50:1 CS20-55
baseband, offers ODM/OEMs a ready-to-
10 to 500 watts power handling depending on coupling and model number. use 60-GHz solution, with the ability to cus-
SMA and Type N connectors available to 18 GHz.
tomize the RFM to custom specifications.
* Coupling Value: 3, 6, 8, 10, 13, 16, 20 dB.
The RFIC boasts 32 antenna paths with an
on-chip TRX switch, significantly reducing
the antenna footprint and resulting in lower-
cost RF antenna modules. The chip also
has an 802.11ay-compliant RF with channel
bonding and six full channels between 57
to 71 GHz, and a low-noise synthesizer to
enable up to 64 QAM modulation. „

8 MARCH 2022 MICROWAVES & RF

Design Solution
STEVE SUMMERFIELD | Director Algorithm Implementation, Analog Devices
FRANK KEARNEY | Director of Systems Architecture, Analog Devices

How to Make a
Digital Predistortion Solution
Practical and Relevant
For digital predistortion implementations, static quantitative data fails to capture
many challenges, risks, and performance tradeoffs of real-world scenarios. Here’s how
to get beyond fundamentals and into considerations for complex 5G environments.

I
n an ideal world, the output of a power
amplifier (PA) would be an identical
scaled version of the input and most
of the power consumed by the ampli-
fier would reside in the output signal.
Hence, we would have maximum effi-
ciency and no distortion. In the real world,
though, we fall short—real linear ampli-
fiers tend to have very poor efficiencies.
Amplifiers used in cable distribution
systems, for example, have excellent
linearity, but this comes at the cost of
efficiency. In most cases, the efficiency
struggles to achieve greater than 6% with
the balance of the power (94%) being
wasted, which imposes economic, envi-
ronmental, and application costs. In cel-
lular base stations, electricity accounts
for over 50% of the operating-expense
(OPEX) costs.
Wasted power increases electricity
usage and produces greenhouse gases,
while much of the power that isn’t emit- 1. These plots depict a power amplifier's dynamic transfer function with memory effects.
ted as radio waves must be dissipated as
heat. Consequently, active and passive However, higher efficiency comes at a emissions mask and may cause unwant-
thermal management is needed. cost—linearity. Poor linearity in cellular ed interference to operators occupying
Over the last several decades, the cel- systems has two principal consequenc- adjacent channel frequency allocations.
lular industry has pushed the efficiency of es: in-band distortions and out-of-band We typically measure this aspect of per-
the PA to a performance level of more than emissions. In-band distortions disrupt the formance in terms of adjacent-channel
50%. This has been achieved by adopting fidelity of the transmitted signal and can leakage ratio (ACLR).
smart architectures such as the Doherty be represented by a degradation in error- GaN PAs offer an additional challenge
architecture and advanced process tech- vector-modulation (EVM) performance. in that in-band distortions also are pro-
nologies like gallium nitride (GaN). Out-of-band emissions break the 3GPP duced by the charge-trapping effect.

10 MARCH 2022 MICROWAVES & RF

Digital Predistortion

They’re dynamic in nature and unrelated

to any signal-to-noise ratio (SNR) implied
from the ACLR.
Correcting the PA’s nonlinearity is
essential. It’s a reasonable assumption
that if one knew the transfer function of
the PA, employing its inverse on the data
would nullify the nonlinearities. Howev-
er, the PA has what may be considered a
dynamic transfer function; its output-to-
input characteristics can be thought of as
continuously in flux.
Furthermore, the dynamic transfer
function (Fig. 1) depends on a combi- 2. Shown is a conceptual representation of a digital predistortion system.
nation of the PA characteristics (includ-
ing power, voltage, and temperature),
the input signal presented to the PA,
and prior signals that the PA has pro-
cessed (memory effects). The dynamic
nonlinear behavior of the PA must be
modeled before it can be corrected, hence
the requirement for digital predistortion
(DPD). Moreover, the DPD needs to be
adaptive to the dynamics of the envi-
ronment.
Figure 2 depicts the core elements for
many DPD systems: observation, esti-
mation, and actuation. The concept in
Figure 2 generates a model that tracks
the expected response of the PA so that
an appropriate cancellation signal can be
generated to nullify the predicted nonlin- 3. These plots illustrate adjacent channel leakage before and after application of digital pre-
ear behavior of the PA. There are many distortion.
models, such as the ubiquitous generalized
memory polynomial (GMP). generational requirements of the cellular costs associated with it), environmental
A PA operating in its linear region gen- market have changed (2G, 3G, 4G, and considerations are now accelerating that
erates less out-of-band distortions and as now 5G), so too have the requirements change.
shown in Figure 3, has a notable reduction placed on DPD. Those challenges include, PAs and DPD share a partially symbi-
in the level of noise that leaks into the but are not limited to, wider bandwidths, otic relationship. In some instances, that
adjacent channels. The screenshot is from higher powers, carrier placements, higher relationship can be harmonious and in
a spectrum analyzer on a typical DPD peak-to-average signal ratios, and densi- others more difficult. A PA that is DPD-
test bench, which is used to demonstrate fication in the number and proximity of friendly with DPD from one supplier may
static DPD performance that meets the base stations. struggle with that from another. Often,
standards required by many ACLR com- Equipment vendors are anxious to dif- optimal performance is achieved when
pliance tests. ferentiate their product offerings and con- both DPD and the PA are configured and
tinue to push for performance enhance- tuned to match the specific application.
Market Evolution, Performance ment in terms of efficiency relative to the However, because PA design continuously
Enhancement, and a Moving relevant 3GPP specification. PA efficiency evolves to meet the aggressive require-
Target continues to present a challenge. Whereas ments of 5G and beyond, DPD must
DPD has been utilized commercially traditional drivers of change would have evolve accordingly.
in some 8 million cellular base stations been OPEX costs and thermal manage- As wideband and dual-band applica-
since the 1990s. As the technology and ment (including the hardware/weight tions become the norm, PA develop-

12 MARCH 2022 MICROWAVES & RF

D
PD has been utilized commercially in some 8 million cellular
base stations since the 1990s. As the technology and generational
requirements of the cellular market have changed (2G, 3G, 4G, and now 5G),
so too have the requirements placed on DPD.

ers are challenged on how to achieve

wider bandwidths at higher frequen-
cies while maintaining performance
expectations. Developing a PA with a
bandwidth capability of 200 MHz and
beyond is a challenge. Ensuring that it
also can meet 3GPP specifications and
efficiency creates further challenges.
These challenges, in turn, fall back on
the DPD developers.

Understanding the Challenge

Quantifying DPD performance isn’t a
straightforward task. A matrix of condi-
tions and scenarios should be consid-
ered—in addition to the PA, there’s a slew
of other mitigating dependencies. When
we consider performance, the specifics
of the test conditions must be clearly
defined: Achieving >50% efficiency
at a bandwidth of 200 MHz is a much
greater challenge than the same level of
efficiency at an operating bandwidth of
20 MHz.
The situation becomes more complex
when we consider carrier placement
within the allocated spectrum. It may be
a contiguous signal, but it also may be
a segmented carrier allocation in which
portions of the spectrum are occupied.
At a high level, there are quantita-
tive indicators of DPD performance—
the data points primarily defined by
the 3GPP specification or operator
requirements: ACLR, EVM, and effi-
ciency. Meeting these are just the tip
of the DPD performance iceberg. If we
add stability and robustness to the mix,
the enormity of the challenge starts to
surface. Two critical aspects define DPD
performance: the static bench-level per-
formance and the real-world operational
dynamic performance.

GO TO MWRF.COM
Digital Predistortion

To characterize the challenge of

dynamics, Figure 4 illustrates signal evo-
lution in a dynamic environment and
shows how the ACLR might respond to
a continuously adapting DPD. The num-
bers are notional. The plot provides an
example of the effect of abrupt signal
changes, which are extreme but legiti-
mate. As the signal changes, the DPD
model adapts to it. Adaptation events are
indicated as dots.
In the transition time between a signal
change and the next adaptation, a mis-
match occurs between the model and the
signal. Therefore, the ACLR value can
rise, increasing the risk of exceeding the
emissions specification for the duration
of the transient.
Adaptation takes a finite time, so
there will always be a transient. The
challenge for high-performance DPD
is to reduce that model mismatch time
to a minimum while also ensuring a
smooth transition between both states. 4. Shown in this plot is an example of abrupt signal changes and how the ACLR might
The process must be managed so that respond to a continuously adapting DPD.
speed of adaptation and disruption to
ACLR are both considered.
It’s important to understand how the
model mismatch depends on the nature of
the signal transitions. When the mismatch
is high, DPD risks degrading performance
or, even worse, the stability of the radio.
Instability, should it occur, can see the
DPD algorithm spiral out of control, blast-
ing emissions masks and, in worst-case
scenarios, damaging the radio hardware.
On the seesaw of performance vs. stabil-
ity, stability will always be the prominent
design consideration. A DPD design must
be robust to ensure stability and error
recovery under normal and abnormal 5. This DPD implementation features more extensive data capturing/observation.
operating conditions.
The challenge for a high-performance, In addition, because Analog Devices is • Generality: An OEM can fine-tune its
practical DPD solution can be summa- a third-party vendor of DPD, the follow- DPD to each product. We don’t have
rized in these requirements: ing also must be considered: that luxury. We must meet the needs
• Static performance (compliance test- • Maintenance: The resolution of per- of many applications while minimiz-
ing or where the BTS traffic load is formance issues that occur when our ing configurability and redundancy.
approximately constant): ACLR and customer (the OEM) deploys to its
error-vector magnitude (including customer (the operator). Progressing DPD Performance to
GaN as a special case) • Evolution: During its lifetime in the Meet the Challenges
• Dynamics field, the PA technology and signal- If we consider static performance
• Robustness space application can change. alone, there’s an element of linear pro-

14 MARCH 2022 MICROWAVES & RF

 Digital Predistortion

gression to DPD development. Namely, GMP coefficients help to model the PA of a strategy to maintain, if not improve,
if we provide more resources, then we behaviors more accurately. Thus, as band- performance.
enhance performance. For example, more widths widen, this becomes one element However, such an approach has its limi-
tations. A point of diminishing returns
will be reached at which additional
resources provide little or no benefit.
DPD algorithm developers need to take
more creative approaches to eke out fur-
ther enhancements. ADI’s approach is to
augment the base algorithm GMP with
more general basis functions and higher-
order Volterra products.
As developers attempt to create a
model that will accurately predict the
PA behavior, data accumulation and
data manipulation are core essential
elements. Capturing data at successive
time and power levels gives developers
a more complete reservoir or armory
from which to make their assessments
and shape model behavior.
Figure 5 provides a conceptual overview
of a system adopting such an approach.
6. Long-term gain errors were introduced by GaN PA charge trapping. Note the more extensive data-capturing/
observation nodes coupled with the digi-
tal power monitoring. Power monitoring
helps with dynamics. Previously stored
models can be brought into play in various
ways to mitigate the dynamic transients
discussed above.
In recent years, GaN PA technology
has brought about an additional chal-
lenge for DPD developers: long-term
memory effects. GaN process technol-
ogy brings with it many distinct advan-
tages in terms of efficiency, bandwidth,

IMPROVE RF, HIGH POWER PERFORMANCE.

and operating frequency. It does exhibit
what’s known as the charge-trapping
CONTACT CDE FOR SAMPLES OF effect, though.
SUPERIOR RF MICA CAPACITORS. Charge trapping in GaN is a long-
term memory effect, where there’s a trap
CDE RF Mica Capacitors Are Better.
They are free of thermal and stress cracking, have higher
and then a thermal de-trap. GMP-based
Q, lower ESR, run cooler and can handle up to twice the current of NPO or porcelain capacitors in

DPD corrects some of the error. How-
ever, residual error continues to impact
the same size. Save space by replacing multiple MLCCs with a single part. Specifically, a much better,

signal quality. This distortion induces
more reliable, cost effective choice. a corresponding rise in EVM. Figure 6
Want proof? provides a graphical representation of the
phenomenon. Note the PA gain fluctua-
tions and the temporal nature of those
fluctuations. Also note the trap and de-
trap states and that de-trapping occurs
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16 MARCH 2022 MICROWAVES & RF

 
 
 



 



 
 

 





 
 

  









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Digital Predistortion

D
PD that has narrow margin to the specification may not be
welcomed, while DPD that causes temporary specification extrusions
may unsettle operators. DPD that goes unstable and results in illegal
emissions and possible PA failure is disastrous.

As the temporal effect is long-term, As stated, the stability of a DPD imple- As we start to qualify DPD performance
traditional approaches would suggest the mentation is of utmost importance. (Fig. 7), we need a holistic approach that
acquisition of a very large number of sam- Robustness is addressed by continuously handles:
ple points and, hence, a large amount of monitoring the internal state and provid- • Static performance
data to be stored and processed. Memory ing rapid responses to unusual conditions. • Dynamic performance
costs, silicon area, and processing costs The generality of ADI’s solutions is • Robustness
mean that this approach isn’t a feasible addressed by testing on a wide sample • Stability
option for commercial DPD deployments. of PAs from many vendors—a large per-
DPD developers must negate the effects centage of whom a symbiotic technical DPD that has narrow margin to the spec-
of charge trapping but do so in a way that relationship is established. ification may not be welcomed, while DPD
lends itself to efficient implementation that causes temporary specification extru-
and operation. Conclusion sions may unsettle operators. DPD that goes
Charge-trap correction (CTC) is a All too often when DPD performance unstable and results in illegal emissions and
feature supported at low cost in terms is being presented, the focus is on the possible PA failure is disastrous.
of power and compute time in ADI’s static elements of performance. While A DPD algorithm should not be con-
ADRV9029 transceiver. It’s been shown the yardstick of measurement in terms sidered an off-the-shelf item. Optimal
to recover the EVM to a level that’s within of EVM and ACLR remain valid, more performance is achieved when the DPD
the EVM 3GPP specifications. A next- attention must be paid to the matrix of is pruned to the specifics of the PA and
generation transceiver, the forthcoming operating conditions and requirements the application. Hence, algorithm agility
ADRV9040, boasts a more elaborate solu- that frame those measurements. The and development/field support also are
tion that’s planned to deliver enhanced demands of 5G NR continue to push important considerations. An effective
performance in dynamic scenarios and application requirements. This, coupled DPD algorithm can deliver substantial
better coverage against what are an with the desire for higher PA efficien- system benefits. The complexity of the
increasing number of GaN PAs with cies, compounds the challenge of DPD requirements and the performance assess-
unique charge-trap personalities. algorithm development. ment should not be underestimated.

7. A holistic approach to DPD assessment balances all of the elements of DPD performance with the challenges.

18 MARCH 2022 MICROWAVES & RF

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Engineering Essentials
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MELIKA ROSHANDELL | Product Marketing Director, Cadence

Thermal Analysis is Vital for High-Power

MMIC, MCM, and RF PCB Apps
Concerns about power-amplifier heating and operating temps aren’t new as they affect
device reliability and performance. However, RF designers must broaden the scope of
thermal management to include the package, PCB, and surrounding electronics.

R
F/microwave power amplifiers
(PAs) dissipate power, which
leads to a rise in operating
temperatures that can extend from the
single IC stage to an entire, highly inte-
grated RF system. Higher temperatures
degrade both the immediate and long-
term performance of RF electronics.
Such temperatures are directly linked
to reduced device lifetime or mean-time-
to-failure (MTTF) for metal semicon-
ductor field-effect transistor (MESFET),
pseudomorphic high-electron mobility
transistor (pHEMT), and heterojunc-
tion bipolar transistor (HBT) devices
used in gallium-arsenide/gallium-nitride
(GaAs/GaN) monolithic microwave ICs
(MMICs). Reliability and MTTF are of
special concern for harsh environments
and hard-to-service applications, such as
remote base stations and satellite com-
munications.
RF designers need to expand their
concern for thermal management beyond
PAs to include the package, PCB, and sur-
rounding electronics. It’s important to
determine the channel temperature for
devices based on the large-signal operat-
ing conditions, dissipated power, device
geometry, and heat-sinking properties of
the device and its environment.
For that reason, PA development
teams increasingly rely on a mechanical-
engineering or thermal-analysis team to
investigate operating temperatures either
through thermal simulations or measure- 1. Here we show GaN HEMT performance with and without self-heating on the right (image
ments. However, this can lead to delays courtesy of Cree) and GaN device MTTF-vs.-thermal conduction heating (TCH) on the left.
in the overall design cycle. (image courtesy of Qorvo)

20 MARCH 2022 MICROWAVES & RF

 By introducing thermal simulation 2. Shown is a simple thermal-resistance network
within the RF/microwave circuit design superimposed over a cross section of a die in a
flow, engineering teams can significantly package.
reduce turnaround time by obtaining tem-
perature information that impacts per-
formance during the design phase. This
article describes a simulation workflow
that supports thermal analysis directly
within an RF design framework.

Today’s Thermal Challenges

Virtually every modern hardware appli-
cation uses wireless communications and
sensing to connect devices. Such wireless drain-lag transients, and restricted micro- bonds, grounding vias, and heatsinking
connectivity thus requires that RF tech- wave power output. strategies, all of which can be optimized
nology be an integral part of the system Furthermore, as with all semiconduc- through analysis.
that must coexist with high-speed digital tor devices, the reliability of silicon-on-
and analog signals across chip, package, carbide (SiC) MESFET and GaN HEMT Thermal Analysis for RF
and board physical designs. devices depends directly on maximum Applications
With the system trend to shrink foot- operating channel temperature. It’s there- Heat maps illustrate device-generated
prints while integrating more electronics, fore important to determine with a high hot spots and the thermal challenges
the importance of electromagnetic (EM) degree of confidence what the maxi- posed by densely packed electronics.
and thermal analysis at the point of design mum channel temperature is under spe- Within the IC, performance can be com-
has become critical to efficient and suc- cific operating modes—particularly for promised by rises in temperature. In pack-
cessful system development. products operating under continuous- ages/PCBs, thermal problems arise due
RF engineers, and in particular PA wave (CW) conditions and dissipating to Joule heating, which affects IR drop
designers, are concerned about device large amounts of thermal energy. When and performance. In the broader system
heating and operating temperatures designing PAs, it’s crucial that the tran- context, we need to identify hot spots and
because of the effect on device reliabil- sistors operate below their rated operat- implement a cooling strategy.
ity and performance. The dc power that ing junction or channel temperatures to To study the temperature resulting from
PAs don’t convert into RF energy is con- ensure that the amplifier will have the power dissipation, thermal-analysis tools
verted into heat, and the electrothermal desired reliability. can be combined with nonlinear RF cir-
effects impact RF performance with the How much heat can be generated by a cuit simulation tools to provide the need-
dominant drain-lag effect dependent on typical high-power GaN PA that might be ed power-dissipation information. When
both the voltage bias and the channel tem- found in a base station? A GaN HEMT, combined, the RF circuit simulator and
perature. Device channel temperature is a for example, with a gate periphery of 28.8 thermal-analysis software provide criti-
primary source for thermal degradation mm operating at a drain voltage of 28 V cal operating temperature information for
mechanisms, leading to shortened device delivers 120 W of CW power. At a 60% both in-design and signoff.
lifetimes (Fig. 1). dc-to-RF conversion efficiency, there will A simple thermal resistance network,
GaN transistors provide higher output- be 80 W of dissipated heat, which trans- shown superimposed over a cross section
power densities, wider bandwidths, and lates into a heat density of over 20 kW of a die in a package in Figure 2, helps
improved dc-to-RF efficiencies than their per square inch. illustrate heat flow in a quad flat no-lead
GaAs counterparts. However, to take This heat will be dissipated from the (QFN) package. The PA MMIC is embed-
advantage of this enhanced performance, device channel to the package and PCB ded in the QFN package, which is sitting
designers need to accurately capture the though structures such as wire bonds, on top of the PCB.
complex behaviors of the device during grounding vias, and the semiconduc- The thermal circuit has a heat source
circuit simulation, including thermal tor and package materials themselves. with the power (Q) flowing from the
effects generated by the GaN device itself. Designers need to ensure that the device is junction to the bottom case of the pack-
Among the trapping effects related to operating below the rated operating junc- age, then to the outside world (ambient
channel temperature in aluminum GaN tion temperature. Thus, they’re interested temperature). Some of the heat will flow
HEMTs are transconductance frequency in knowing that value and lowering it, if from the junction to the case of the pack-
dispersion, current collapse, gate- and possible, through structures such as wire age and spread into the board, and then

GO TO MWRF.COM 21
Thermal Management

out through the air or some other con-

duction path.
The thermal version of Ohm’s law shown
at the bottom of the diagram is used to
calculate the channel temperature of the
PA MMIC, which is equal to the power
dissipation times the thermal resistance
plus the case temperature that could come
from the thermal model results. We can
obtain a much more rigorous and accu-
rate prediction of temperature through 3D
planar modeling of the devices, with mate-
rial conduction properties and simulated
power dissipation coming from nonlinear
harmonic-balance (HB) circuit simulation.

Integrated Thermal-Analysis 3. These images represent various heat-map views of the full 3D structure: Power across
Workflow the board (upper left), heat sources spread across the MMIC's power transistors (upper
RF designers using software that offers right), the die metallization (lower left), and with the wire bonds added (lower right).
multiple integrated tools can obtain oper-
ating temperature and heat maps of their a high-power X-band MMIC PA in a QFN For this example, the average tempera-
RF device, package, and PCB system with package on a PCB. The design is initially ture across each gate finger is 92.6°C for a
direct access to the thermal solver through simulated in the APLAC HB solver, after simulated power dissipation of 2.9 W. This
the circuit simulator. The tools perform which the power information from all of flow enables the designer to simulate clos-
their schematic simulations, produce the devices within the design is sent to the er to the edge of the design space, allowing
power dissipations, and then automatically Celsius Thermal Solver. There, the chip is the PA’s performance to be maximized
generate a thermal model and simulations. simulated inside the QFN package on a because a large thermal margin doesn’t
Cadence’s Celsius Thermal Solver, for PCB to see how the power is distributed need to be left on the table from a safety
example, offers finite-element analysis across the different technologies. standpoint. The design also can be studied
(FEA) to accurately determine the oper- Once the simulation is completed, we to see the effects of other options, such as
ating temperature using an adaptive mesh- can view the full 3D structure (Fig. 3). putting the die on a heatsink, on tempera-
ing algorithm. The algorithm works with The power across the board can be seen ture distribution to optimize performance.
the Celsius Thermal Solver’s workbench at upper left and the heat sources spread
to illustrate thermal heat mapping and across the different power transistors of the Conclusion
automatically report the operating tem- MMIC at upper right. By turning off the This article discussed the importance
perature for all defined heat sources in visibility of any of the layers, one may view of thermal analysis for RF power appli-
the AWR Design Environment platform. single layers. The visibility of the package cations. As PCBs become more densely
Thermal analysis can be applied imme- and board structures can be turned off to populated with devices, the operating tem-
diately during simulation to improve examine the temperature across the die peratures of those devices impact the reli-
simulation accuracy, including thermal metallization represented with the heat ability (device lifetime) and performance.
effects, enabling problems to be discov- map (bottom left), as well as with the bond A thermal-analysis flow using a thermal
ered early on. In addition, the mechani- wires made visible (lower right). solver integrated within the circuit simula-
cal computer-aided design (MCAD) and The scale for temperature distribution tor gives designers an understanding of
power-dissipation data can be handed off dynamically changes as structures are made device operating temperatures related
in parallel to a mechanical/thermal engi- visible or removed. The cut setting can be to power dissipation. Subsequently, that
neer for final signoff, if needed. selected to slice the structure for a cross- temperature information can be inserted
section view of the localized hotspots in into an electrothermal model to predict
MMIC PA Example the x, y, and z directions. the impact on RF performance. This flow
This example demonstrates how inte- A results summary shows temperatures provides RF engineers with ready access
grating the Cadence Celsius Thermal of the heat sources of the individual field- to operating temperature data for reliabil-
Solver within Microwave Office circuit effect transistor (FET) fingers, which are ity and performance studies early in the
design software enables thermal analysis of reported back into the circuit simulator. design process.

22 MARCH 2022 MICROWAVES & RF

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 A Special Section to ENDEAVOR’S DESIGN ENGINEERING & SOURCING GROUP

JACK BROWNE | Technical Editor

RFICs and MMICs Aim at

SWaP Targets
Designers of aerospace and
defense electronic systems
look to more efficient
RFICs and MMICs with
increased functionality
to achieve solutions with
ever-smaller SWaP.

S
olid-state devices and circuits
have long been mainstays of
aerospace and defense electronic
systems, even in the face of rising signal
frequencies and power levels. As military version/mixing, switching, signal genera- tions are expected to be on hand at the
system designers become more concerned tion, and amplification. Passive MMICs 2022 Radio Frequency Integrated Cir-
with smaller size, weight, and power provide functions such as attenuation, cuits (RFIC) Symposium at the Colo-
(SWaP), they have looked to RF inte- coupling, and filtering. Multiple-function rado Convention Center (Denver). It’s
grated circuits (RFICs) and monolithic MMICs replace what had once required scheduled for June 19-21, 2022, as part
microwave integrated circuits (MMICs) separate components. However, increased of “Microwave Week” during the 2022
to provide more high-frequency func- circuit density packs energy tighter and IEEE International Microwave Sympo-
tionality with higher efficiency. Among heat must be dissipated efficiently as part sium (IMS) when the Automatic RF Tech-
their applications are communications, of any SWaP planning. niques Group (ARFTG) meeting brings
electronic-warfare (EW), and radar sys- Whether as chips or in packages, ICs together those interested in RF test and
tems, including those moving into space for aerospace and defense must be capable measurement methods.
aboard satellites. of difficult operating environments, such One of the more diversified RFIC/
The trend in RFICs and MMICs for as operating temperatures from −55 to MMIC portfolios for aerospace and
aerospace and defense use has been +85°C. ICs for space must meet even more defense belongs to Analog Devices. The
greater integration at higher frequen- challenging benchmarks, such as operat- company’s ICs are based on GaAs, GaN,
cies, whether as bare die or in packages. ing temperatures from −55 to +125°C, silicon (Si), and silicon-germanium (SiGe)
Although major defense contractors, such Class K and Class S parameters, and substrates for functions such as clock
as BAE Systems, Northrop Grumman, space-qualified MIL-PRF-38535 require- generation and timing, data conversion,
and Raytheon Technologies have their ments. As needed for high-reliability (hi- frequency generation, and signal ampli-
own gallium-nitride (GaN) and gallium- rel) applications, RFICs and MMICs can fication. Analog Devices promotes its IC
arsenide (GaAs) foundries, they rely on a be screened, for example, to even higher products as an “antenna to bits” portfolio,
variety of sources for different RFICs and operating temperatures. with the assurance of full product testing
MMICs to accomplish more with less in by measure of digital test capabilities to 40
modern electronic systems. Meet the Makers Gb/s and RF/microwave test capabilities
Active RFICs and MMICs perform High-frequency industry developers to 110 GHz.
essential functions in defense systems for and suppliers of RFICs and MMICs for One of the company’s “simpler” RFICs
antennas, data conversion, frequency con- military/aerospace and other applica- is the ADAR3000, an antenna beamform-

GO TO MWRF.COM 25
RFICs and MMICs

er for transmit and receive operation from 7.5 to 100.0 MHz, and the differential con- and active electronically scanned array
17 to 22 GHz (Fig. 1). Time delays and step figuration allows for the use of frequency- (AESA) radar systems.
attenuation can be programmed to form 4 division-duplex (FDD) and time-division- At higher frequencies and with a bit
beams and 16 channels, with SPI comput- duplex (TDD) antenna systems. more complexity, the firm also offers the
er control. While the antenna beamformer AWMF-0221 dual-polarized Si CMOS
fits within a chip-scale BGA package, even beamforming IC for use from 24.25 to
more impressive is that the same BGA 29.50 GHz (Fig. 3). Designed to cover
package contains an integrated analog-to- specific 3rd Generation Partnership
digital converter (ADC) and memory for Program (3GPP) bands, including n258,
storing beam positions. The beamformer n257, and n261, in 5G networks, the IC
IC has an operating temperature range of can be operated with four dual-polarized
−40 to +85°C. or eight single-polarized channels, con-
trolling radiating elements in a phased-
array antenna. Its beamsteering controls
are compliant with all 3GPP standards,
and the IC is designed with strict car-
bon-neutrality goals in mind to support
2. A chip-scale package measuring 12 × 12 environmentally safe “green” electronic
mm holds silicon ICs containing several sets systems.
of transmitters and receivers operating to 6
GHz. (Courtesy of Analog Devices)

Silicon ICs for Antennas

Anokiwave is well-versed in the design
and production of active-antenna sili-
con ICs, especially beamforming ICs for
phased-array antennas working through
mmWave frequencies. The company’s
ICs, which serve military and aerospace
applications as well as commercial mar-
1. The ADAR3000 is a silicon MMIC beam- kets like satcom and 5G networks, are 3. This silicon CMOS MMIC orchestrates
former that controls the beams of radiating developed with goals of high perfor- antenna beamforming from 24.25 to 29.50 in
elements from 17 to 22 GHz. (Courtesy of mance, low cost, and small size in mind. phased-array antennas. (Courtesy of Anoki-
Analog Devices) The beamforming ICs provide precise wave)
control of signals to additional radiat-
The same company’s model AD9371 ing elements as part of a phased-array Renesas Electronics Corp. has devel-
wideband transceiver IC is a bit more antenna capable of directing and steering oped several generations of silicon ICs
complex, integrating multiple transmit- EM beams for receiving and transmit- for antenna beamforming applications,
ters and receivers for applications from ting purposes. with separate ICs for radar and Ka- and
0.3 to 6.0 GHz. It’s well-suited for com- As an example, model AWS-0104 is an Ku-band satcom receive and transmit
mercial, industrial, and military appli- X-band beamforming IC that operates beamforming functions as well as LNA
cations including EW systems, portable from 8.50 to 10.55 GHz. It connects to MMICs to aid the receive functionality.
radios, satcom systems, and data links in four radiating elements to form single The ICs are available as 16-channel, dual-
unmanned aerial vehicles (UAVs). beams for transmission and reception, beam receive beamformers (which can be
The MMIC, housed in a 196-ball chip- with the operating mode controlled by programmed for single-beam use), and
scale ball-grid-array (CS-BGA) package an additional transmit/receive switch. 8-channel transmit beamforming ICs.
measuring just 12 × 12 mm, contains com- Running from a single power supply, The three receive beamformer ICs
ponents for pairs of differential transmitters the IC provides 6-bit gain and phase cover frequency bands of 10.70 to 12.75
and receivers and several other receivers control of the beams to steer and shape GHz, 14.0 to 17.0 GHz, and 17.7 to 21.2
that at one time would have filled several the beams during transmit and receive GHz, while the transmit ICs cover bands
19-in.-wide equipment racks (Fig. 2). The modes. The compact, low-power antenna of 13.75 to 14.50 GHz, 14.0 to 17.0 GHz,
various receivers handle bandwidths from solution targets communications radios and 27.5 to 31.0 GHz. Additional sup-

26 MARCH 2022 MICROWAVES & RF

pliers of RFICs for beamforming appli-
cations, although only for commercial
bands and applications, include pSemi
and Qualcomm.
Microsemi Corp., once a part of Micro-
chip and now in the fold of Mercury
Systems, offers a broad range of RFICs
and MMICs including switches, pres-
calers, and frequency/phase detectors
for EW, radar, and test applications from
dc through 65 GHz. Its PFD1K phase
frequency detector can be used with
input frequency references and voltage-
controlled oscillators from 10 MHz to 40
GHz to create phase-locked-loop (PLL)
frequency sources.
The device packs a pair of 7-bit pres- 4. This GaAs MMIC distributed amplifier is supplied in die form for applications from dc to
caler dividers and an 8-GHz phase 22 GHz. (Courtesy of Qorvo)
frequency detector into a 6- × 6-mm
ceramic QFN package. It runs on a single local oscillator (LO) housed within a lead- Keep it Simple
positive or negative 3.3-V dc supply and less QFN package. It covers an RF range of Complex multifunction ICs can often
inputs and outputs can be used in single- 20 to 32 GHz with the LO operating at 10 replace larger, higher-power modules
ended or differential modes. The model to 16 GHz and yielding an intermediate- based on discrete components. RFICs
MMS006AA GaAs MMIC single-pole, frequency (IF) range of dc to 6 GHz. The and MMICs designated for military duty
double-throw (SPDT) switch operates conversion loss and single-sideband (SSB) contribute to military electronic system
from dc to 20 GHz with less than 2-dB noise figure are both 8.5 dB, while the RF SWaP goals by replacing single-function
insertion loss and more than 40-dB iso- input power for 1-dB compression is +3 discrete components such as amplifiers,
lation between ports. Typical switching dBm. The mixer/LO MMIC draws 27 mA mixers, and switches, albeit with less
speed is 10 ns. from a +4-V dc supply. power-handling capabilities.
Qorvo, created from the merger of The company also offers GaAs MMICs For example, the MMA-012030 from
former RF semiconductor innovators in die form, such as the model CMD240 MicroWave Technology Inc. is a broad-
TriQuint Semiconductor and RF Micro (Fig. 4), a distributed amplifier with more band GaAs MMIC traveling-wave ampli-
Devices and the combination of Custom than 15 dB gain and low 2.2-dB noise fig- fier in die form. Measuring just 2350
MMIC, also offers miniature packaged ure from dc to 22 GHz. The chip ampli- × 1050 μm, it’s capable of 0.5 W (+27
front-end modules for commercial com- fier is fully passivated for protection from dBm) output power at 1-dB compres-
munications and commercial and military damage caused by water vapor absorption sion from 0.1 to 20.0 GHz. The amplifier
radar systems. However, they’re achieved in high humidity. consumes 6 W power (0.5 A at +12 V dc)
by integrating multiple amplifier, limiter, A relative newcomer, Viper RF, offers but maintains 12.5-dB gain flat within
and transmit/receive switch dice within a standard and custom discrete transistors ±0.5 dB across the full wide bandwidth.
multipin, surface-mount package. and MMICs to 150 GHz, including the It’s one example of an extensive line of
The model QPF5005 front-end module VRFC0127-BD C-band single-chip front- broadband MMIC power amplifiers,
spans 8 to 12 GHz with a receive noise end MMIC. It operates from 5.2 to 5.6 driver amplifiers, and low-noise ampli-
figure of 2.2 dB and transmit power of GHz and integrates a transmit/receive fiers (LNAs) in chip form for aerospace
+47 dBm (5 W). For those in need of more switch, power amplifier, and LNA. Well- and defense applications.
transmit power, model QPF5010 covers suited for radar and satcom, the receiver Due to the difficulty of maintaining low
the same frequency range with the same function achieves noise figure of 2.4 dB amplifier noise figure over broad band-
receive noise figure, but it delivers typi- and small-signal gain of more than 35 widths, the firm offers die amplifiers such
cally +40 dBm (10 W) transmit power. dB at 5.4 GHz. The transmit saturated as the MLA-01122B GaAs MMIC LNA
One product that made the transi- output power is typically +47 dBm at 5.4 with optional 50-Ω on-chip impedance
tion from Custom MMIC, the model GHz with power-added efficiency (PAE) matching by means of microstrip inter-
CMD310C3, is a subharmonically of better than 40%. The front-end chip connection to additional tuning stubs.
pumped MMIC mixer with an integrated measures 5.89 × 6.70 mm. The MMIC LNA, measuring 1.57 × 1.31

GO TO MWRF.COM 27
RFICs and MMICs

× 0.1 mm, is a good fit for EW and sat- saturated output power in bare die form power supply, which is +6 V dc. It typically
com receivers, drawing just 55 mA from a with PAE of 23% at 5-dB compression draws 65 mA from the supply.
+5-V dc supply. It features 1.6-dB typical (Fig. 5). Not common for PAs, it’s char- pSemi, which recently announced a
mid-band noise figure from 1 to 12 GHz acterized for noise figure, which is quite series of RFICs for 5G frequency-con-
with 17-dB gain that’s flat within ±1.5 dB. respectable at 5 dB from 1 to 9 GHz. The version and beamforming applications,
Typical output power at 1-dB compression MMIC PA draws 400-mA current from a has been a long-time supplier of single-
is +16.5 dBm. +30-V dc supply. function RFICs such as switches and
Among the most broadband of MMIC phase shifters for military applications.
amplifiers, the model MMA0035AA The PE44820 phase shifter, for exam-
eight-stage traveling-wave die ampli- ple, provides precise phase control for
fier from Microsemi Corp. has a band- weather and military radar systems
width of 0.04 to 65.00 GHz. It employs from 1.7 to 2.2 GHz (with extended
the company’s passive low-frequency operation to 3.0 GHz). It’s well-suited
extension (PLFX) on-chip circuitry to for beamforming networks, distributed
provide 10-dB small-signal gain flat antenna systems, active antenna sys-
within ±1.25 dB. It measures just 1640 tems, and phased-array applications.
× 920 μm but has an integrated power Fabricated with the company’s silicon-
detector and dynamic gain control of on-insulator (SOI) CMOS technology,
better than 30 dB. the RFIC’s 8-bit phase shifter provides
The amplifier draws 150 mA from a 5. AMCOM’s GaN MMIC PA, which provides steps as small as 1.4 degrees. It’s designed
+7-V dc supply. It provides +15 dBm high gain and low noise figure from dc to 10 for temperatures as high as +105°C and
output power at 1-dB compression and GHz, comes in die form. (Courtesy of AMCOM holds RMS phase errors under 1 degree
+18-dBm saturated output power for Communications) and amplitude errors to 0.1 dB or better.
extremely broadband applications in com- The phase shifter comes in a 5- × 5-mm
munications and EW systems requiring Another long-time supplier of RFICs QFN package.
small-signal amplification. and MMICs, MACOM Technology Solu- A source not normally associated with
United Monolithic Semiconductors tions recently announced that four of its GaAs technology—Keysight Technolo-
offers LNAs in packaged form and PAs in manufacturing sites (in the U.S.) achieved gies—provides one of the most broadband
die form based on GaN and GaAs materi- AS9100D certification. The quality man- MMIC components, the dc-to-75-GHz
als. In die form, the model CHA8212-99F agement system (QMS) standard, which model TC950 SPDT switch. Designed
PA supports compact X-band EW and builds on the ISO9001 military and space nominally for general-purpose and instru-
radar systems. It provides +44.5-dBm standard, designates the highest quality mentation applications, the switch also
saturated output power from 8.5 to 11.5 and repeatability of products from these is a good fit for EW, ECM, and pulsed-
GHz with 34-dB small-signal gain across manufacturing facilities, located in Massa- radar systems. The switch chip, which is
the frequency range. It achieves 36% PAE chusetts, Michigan, New Hampshire, and fabricated with Microwave Technology’s
at 7-dB compression while drawing 750 North Carolina. GaAs pHEMT process, measures 630 ×
mA current from a +28-V dc supply. MACOM offers a wide range of in- 930 μm. It has 2.6-dB insertion loss and
For those in need of more bandwidth house designed and fabricated RFICs and 29-dB isolation at 50 GHz.
(but less power), the model CHA7618-99F MMICs as well as integrated assemblies Mini-Circuits, one of the RF industry’s
delivers +40 dBm at 8-dB compression based on those ICs and discrete semicon- most diversified suppliers of discrete high-
from 0.5 to 18.0 GHz with 30-dB gain. ductors. Among its MMIC amplifiers, the frequency components, also offers a wide
Also in die form, the PA achieves 24% MAAM02350-A2 is a GaAs MMIC PA array of RFICs and MMICs, typically in
PAE at 8-dB compression. It consumes in an 8-lead ceramic flatpack package. It packaged form. The choice of component
800 mA at +18 V dc. operates from 0.2 to 3.0 GHz with +14- functions, such as amplifiers and switch-
Providing discrete transistors as well as dBm output power at 1-dB compression es, give system designers the flexibility
MMIC amplifiers, in flange packages and and low noise figure of 4 dB. The gain is to weigh overall system performance in
as bare die, AMCOM Communications 18 dB and flat within ±0.75 dB across the quest of SWaP goals.
works with both GaN and GaAs sub- full bandwidth. For example, model PMA-183PLN+ is
strates, too. The AM00010037WN-00 is The MMIC consists of two integrated a 6- to 18-GHz GaAs MMIC LNA in a
a GaN MMIC PA with 13-dB small-signal gain stages with resistive feedback and 16-lead MCLP housing. It provides small-
gain from dc to 10 GHz and typical gain requires no other external components signal gain of typically 26.3 dB at 6 GHz,
flatness of ±1.5 dB. It delivers +37-dBm other than a dc blocking capacitor for the 27.5 dB at 15 GHz, and 29.7 dB at 18 GHz

28 MARCH 2022 MICROWAVES & RF

RFICs and MMICs

with noise figure of typically 1.4 dB at 6 less insertion loss across the full frequency The MMIC switch comes in a 12-lead
GHz, 1.2 dB at 15 GHz, and 1.3 dB at range. The isolation between output ports package measuring 3 × 3 mm.
18 GHz. It draws 57.2 mA from a single is 55 dB to 2 GHz and 37 dB to 4.5 GHz.
2.6-V dc supply. Conclusion

F
When higher frequency coverage is For the future, the DoD and DARPA
required, the firm also supplies the model or the future, the are seeking higher-frequency internet
TSS-44+ MMIC amplifier with 17.6-dB DoD and DARPA access for defense communications sys-
typical gain that maintains ±0.9 gain flat- tems, notably for many sensors expected
ness from 22.0 to 40.0 GHz. Typical noise are seeking higher- to take advantage of Internet of Things
figure is 3.7 dB to 40 GHz. The amplifier frequency internet (IoT) links via 5G networks. Some of the
is supplied in a 3- × 3-mm MCLP surface- highest-frequency antenna ICs provide
mount package with integrated dc blocks
access for defense operation through 110 GHz for satellite
and bias tee. communications systems, links as well as data links with UAVs and
Among the company’s other MMIC notably for many unmanned ground vehicles (UGVs).
components are phase shifters and Still, more bandwidth is always needed
high-speed switches, such as the model sensors expected to take and higher frequencies in the spectrum
M3SWA2-63DRC+ SPDT absorptive advantage of Internet of is the place where it’s at. This includes
MMIC switch for applications from dc the G-band (110 to 300 GHz), where
to 6 GHz. It operates on ±5-V dc supplies
Things (IoT) links via 5G programs such as DARPA’s Electronics
with 5.6-ns typical rise time and 6.0-ns networks. for G-Band Arrays (ELGAR) project are
typical fall time while suffering 1.3 dB or seeking future MMIC developments.

Ad Index

ANRITSU US ........................................................................................ IFC KYOCERA AVX COMPONENTS CORPORATION ......................................29

anritsu.com kyocera-avx.com
AVTECH ELECTROSYSTEMS LTD ................................................................7 MINI-CIRCUITS.......................................................................... 11, 19, 24
avtechpulse.com minicircuits.com
CIAO WIRELESS INC................................................................................5 PASTERNACK ................................................................................... FC, 9
ciaowireless.com pasternack.com
COILCRAFT, INC. ...................................................................................15 PLANAR MONOLITHICS, INC. (PMI) .........................................................3
coilcraft.com pmi-rf.com
COPPER MOUNTAIN TECHNOLOGIES ....................................................BC POLYFET RF DEVICES ...............................................................................2
coppermountaintech.com polyfet.com
CORNELL DUBILIER................................................................................16 PULSAR MICROWAVE ..............................................................................8
cde.com pulsarmicrowave.com
DBM CORP, INC. .................................................................................. IBC RIGOL USA ...........................................................................................13
dbmcorp.com rigolna.com
ECLIPSE MDI ...........................................................................................6 SOUTHWEST MICROWAVE INC ................................................................4
eclipsemdi.com southwestmicrowave.com
FAIRVIEW MICROWAVE.........................................................................23 WOLFSPEED, INC. .................................................................................17
fairviewmicrowave.com wolfspeed.com
IRONWOOD ELECTRONICS .....................................................................2 This index is provided as an additional service by the publisher,
ironwoodelectronics.com who assumes no responsibility for errors or omissions.

Subscription Assistance and Information: ISSN# 0745-2993 (Print) and 2162-1411(Digital)

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30 MARCH 2022 MICROWAVES & RF

New Products

USB Switch Commands 0.1 to 30.0 GHz

Mini-Circuits’ model USB-1SP2T-34 single-pole, double-throw (SPDT) switch has high
isolation and low loss from 0.1 to 30.0 GHz. Typical isolation is 55 dB or better, with
insertion loss of 2.8 dB to 20 GHz and 4.4 dB to 30 GHz. Switching speed is 2 ms
from USB command to change in switch state. Ideal for communications, radar, and
test, the 50-Ω switch handles +27 dBm power at 1-dB compression via 2.92-mm
connectors and consumes 80 mA from a 5-V dc supply.
MINI CIRCUITS, https://www.minicircuits.com/WebStore/dashboard.html?model=
USB-1SP2T-34

Cartridge Fuses Withstand High Currents and Voltages

Littelfuse now offers a compact cartridge-fuse series that’s rated at 500 V ac/V
dc with current ratings from 40 to 63 A and a 10-kA interrupting rating; the latter
suits them for dual voltage-source power supplies. The 607 Series cartridge
fuse, designed for overcurrent protection applications, provides a robust solution
for demanding high-voltage power-supply circuits. The 500-V fuse rating is suitable
for both ac and dc inputs. With a 10- x 32-mm cartridge body, a single 607 fuse requires
less board space than previous designs that used multiple lowet-current-rated fuses in parallel. As a result, designers
can reduce the board space they reserve for protection components when designing high-wattage equipment. End
caps with integrated stand-off leads eliminate the need for mounting accessories or lead-forming processes. Operating
temperatures range from -55 to 125˚C.
LITTELFUSE, https://www.littelfuse.com/products/fuses/cartridge-fuses/10x32mm-fuses/607

Comb Generators Serve Calibration and EMI Measurement Tasks

EMI Devices now offers three models of comb generators: model WJ10-25A,
WJ10-50A, and WJ10- 100A, along with three broadband antennas: model L1600,
M2500, and S4500. These product families complement each other and can be used
conjointly to conduct daily routine site calibration tasks and many other EMI-related
measurements. All three comb generator models are physically small (outside diameter
= 73.0 mm, height = 56.0 mm) and are housed in robust high-grade aluminum alloy.
They’re powered by a rechargeable internal battery. These devices offer long battery operating time, exceeding 40 hours
of operational time with a fully charged battery.
EMI DEVICES, https://www.emidevices.com/antennas/comb-generators/

Sealed Wire-to-Wire Connectors Scoff at Harsh Environments

With the launch of its Squba series of sealed wire-to-wire connectors, Molex offers an IP68-rated connector that’s certified
as resistant to nearly five feet of water for 30 minutes. The connectors’ patented design meets the stringent international
standard of waterproofing and resistance to dust, dirt, sand, and other contaminants. The 1.80-mm-pitch connector
holds a 6.0-A current rating, enabling transmission of more power over smaller-gauge wire for additional space
savings and reduced costs. The connector’s narrow pitch further alleviates space constraints while availability
in 2-to-10 circuits and support for high operating temperatures offer additional product design options.
Not only that, but the Squba connectors are made with rubber-molded plastic and include a durable
cap to protect the seal from damage during shipping, handling, assembly, and use. As a result,
these smaller, ruggedized connectors are optimized for a wide range of applications and wet,
dusty environments where connector size, resiliency and quality are paramount. These include
consumer devices, commercial vehicles, industrial automation, connected homes, and more.
MOLEX, https://www.molex.com/molex/products/family/180mmpitch_sealed_wiretowire_connectors

32 MARCH 2022 MICROWAVES & RF

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