T1235T-8FP

12 A Snubberless™ Triac

Datasheet − production data

A2
Features
• Medium current Triac
G • High static and dynamic commutation
A1 • Three quadrants
• ECOPACK®2 compliant component
• Complies with UL standards (File ref: E81734)

Applications
G
A2
A1 • General purpose AC line load switching
• Motor control circuits
TO-220FPAB • Small home appliances
(T1235T-8FP)
• Lighting
• Inrush current limiting circuits
• Overvoltage crowbar protection
Table 1. Device summary
Symbol Value Unit Description
IT(rms) 12 A Available in through-hole full pack package, the
VDRM, VRRM 800 V T1235T-8FP Triac can be used for the on/off or
phase angle control function in general purpose
VDSM, VRSM 900 V AC switching where high commutation capability
IGT 35 mA is required. This device can be used without a
snubber circuit when the limits defined in this
datasheet are respected.
Provides UL certified insulation rated at 2 kV.

TM: Snubberless is a trademark of STMicroelectronics

January 2015 DocID024261 Rev 3 1/9

This is information on a product in full production. www.st.com 9
Characteristics T1235T-8FP

1 Characteristics

Table 2. Absolute ratings (limiting values, Tj = 25 °C unless otherwise stated)

Symbol Parameter Value Unit

IT(rms) On-state rms current (full sine wave) Tc = 99 °C 12 A

Non repetitive surge peak on-state F = 50 Hz t = 20 ms 90

ITSM A
current (full cycle, Tj initial = 25 °C) F = 60 Hz t = 16.7 ms 95
I ²t I²t value for fusing, Tj initial = 25 °C tp = 10 ms 54 A ²s

VDRM, Tj = 150 °C 600

Repetitive surge peak off-state voltage V
VRRM Tj = 125 °C 800
VDSM,
Non repetitive surge peak off-state voltage tp = 10 ms 900 V
VRSM
Critical rate of rise of on-state current
dI/dt F = 100 Hz 100 A/µs
IG = 2 x IGT, tr ≤ 100 ns
IGM Peak gate current tp = 20 µs Tj = 150 °C 4 A
PG(AV) Average gate power dissipation Tj = 150 °C 1 W
Tstg Storage junction temperature range - 40 to + 150
°C
Tj Operating junction temperature range - 40 to + 150
TL Maximum lead temperature for soldering during 10 s 260 °C
Vins Insulation rms voltage, 1 minute 2 kV

Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol Test conditions Quadrant Value Unit

Min. 1.75
IGT (1) VD = 12 V, RL = 30 Ω I - II - III mA
Max. 35
VGT VD = 12 V, RL = 30 Ω I - II - III Max. 1.3 V
VGD VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C I - II - III Min. 0.2 V
IH (2) IT = 500 mA Max. 40 mA
I - III 60
IL IG = 1.2 IGT Max. mA
II 65
VD = 536 V, gate open Tj = 125 °C 2000 V/µs
dV/dt Min.
VD = 402 V, gate open Tj = 150 °C 1000 V/µs
Tj = 125 °C 12
(dI/dt)c Without snubber (dV/dt)c > 20 V/µs) Min. A/ms
Tj = 150 °C 6
1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of A2 referenced to A1

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T1235T-8FP Characteristics

Table 4. Static characteristics

Symbol Test conditions Value Unit

VT (1) ITM = 17 A, tp = 380 µs Tj = 25 °C Max. 1.55 V

Vt0 (1) Threshold voltage Tj = 150 °C Max. 0.85 V
Rd (1) Dynamic resistance Tj = 150 °C Max. 37 mΩ
Tj = 25 °C 7.5 µA
IDRM VDRM = VRRM = 800 V Max.
Tj = 125 °C 1
IRRM mA
VDRM = VRRM = 600 V Tj = 150 °C Max. 2.7
1. For both polarities of A2 referenced to A1

Table 5. Thermal resistance

Symbol Parameter Value Unit

Rth(j-c) Junction to case (AC) 3.5 °C/W

Rth(j-a) Junction to ambient 60 °C/W

Figure 1. Maximum power dissipation versus Figure 2. On-state rms current versus case
on-state rms current (full cycle) temperature (full cycle)
16
P(W) IT(RMS)(A)
14

14
12
12
10
10
8
8
6
6
4
4
180°
2 2
IT(RMS)(A) TC(°C)
0 0
0 2 4 6 8 10 12 0 25 50 75 100 125 150

Figure 3. On-state rms current versus ambient Figure 4. Relative variation of thermal
temperature (free air convection) impedance versus pulse duration
IT(RMS)(A) K = [Zth / Rth]
3.0 1.0E+00

2.5 Zth(j-c)

2.0 Zth(j-a)

1.5 1.0E-01

1.0

0.5

Ta(°C) tp (s)
0.0 1.0E-02
0 25 50 75 100 125 150 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04

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Characteristics T1235T-8FP

Figure 5. On-state characteristics (maximum Figure 6. Surge peak on-state current versus
values) number of cycles
ITM(A) ITSM(A)
100
100

90
Tjmax: 80 t = 20 ms
Vt0 = 0.85 V Non repetitive
70 One cycle
Rd = 37 mW Tj initial = 25 °C
60

10 50
40

30 Repetitive
Tc = 99 °C
20

10
Tj=150 °C Tj=25 °C VTM(V) Number of cycles
0
1
1 10 100 1000
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Figure 7. Non repetitive surge peak on-state Figure 8. Relative variation of gate trigger
current and corresponding values of I2t current and gate voltage versus junction
temperature (typical values)
ITSM(A), I²t (A²s) IGT, VGT [Tj] / IGT, VGT [Tj = 25 °C]
1000 2.0
Tj initial = 25 °C

IGT Q3
dl/dt limitation: 100 A / µs 1.5
IGT Q1 - Q2
ITSM
VGT
100 1.0

I²t

0.5

sinusoidal pulse with width tp<10 ms tp(ms) TC(°C)

10 0.0
0.01 0.10 1.00 10.00 -50 -25 0 25 50 75 100 125 150

Figure 9. Relative variation of static dV/dt Figure 10. Relative variation of holding current
immunity versus junction temperature (typical and latching current versus junction
values) temperature (typical values)
dV/dt [Tj] / dV/dt [Tj = 150 °C] IH, IL[Tj] / IH, IL[Tj = 25 °C]
5 2.0

VD =VR= 402 V
4
1.5

1.0

2
IL

0.5
1 IH

T j(°C) Tj(°C)
0 0.0
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

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T1235T-8FP Characteristics

Figure 11. Relative variation of critical rate of Figure 12. Relative variation of critical rate of
decrease of main current (dI/dt)c versus decrease of main current (dI/dt)c versus
reapplied (dV/dt)c junction temperature (typical values)
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c (dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C]
4 9

3 7

5
2
4

3
1
2

1
(dV/dt)c (V/µs) Tj(°C)
0 0
0.1 1.0 10.0 100.0 25 50 75 100 125 150

Figure 13. Relative variation of leakage current versus junction temperature for different values of
blocking voltage (typical values)
IDRM, IRRM [Tj; VDRM, VRRM] / IDRM, IRRM
1.0E+00

VDRM = VRRM = 800 V

1.0E-01

VDRM = VRRM = 600 V

VDRM = VRRM = 400 V

1.0E-02

[Tj=125 °C; 800 V]

[Tj=150 °C; 600 V]
1.0E-03

Tj(°C)
1.0E-04
25 50 75 100 125 150

DocID024261 Rev 3 5/9

Package information T1235T-8FP

2 Package information

• Lead-free package
• Recommended torque: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

Figure 14. TO-220FPAB dimension definitions

A
H B

Dia

L6

L2 L7

L3

L5

D
F1
L4 F2

F E
G1

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T1235T-8FP Package information

Table 6. TO-220FPAB dimension values

Dimensions

Ref. Millimeters Inches

Min. Max. Min. Max.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 Typ. 0.63 Typ.
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417
L5 2.9 3.6 0.114 0.142
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126

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Ordering information T1235T-8FP

3 Ordering information

Figure 15. Ordering information scheme

T 12 35 T - 8 FP

Triac

Current
12 = 12 A

Gate sensitivity
35 = 35 mA

Specific application
T = Increased (dI/dt)c and dV/dt producing reduced ITSM

Voltage (VDRM, VRRM)

8 = 800 V

Package
FP = TO-220FPAB

Table 7. Ordering information

Order code Marking Package Weight Base qty Delivery mode

T1235T-8FP T1235T-8FP TO-220FPAB 2.0 g 50 Tube

4 Revision history

Table 8. Document revision history

Date Revision Changes

27-May-2013 1 Initial release.

12-June-2013 2 Added UL certification information.
14-Jan-2015 3 Updated Features, Table 2 and Table 5.

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T1235T-8FP

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DocID024261 Rev 3 9/9