EXPERIMENT NOif,

. . . Of FET and determine

OBJECT:-To plot output charact~nst'cs .. . 1 int.
FET parameters at a given opc1 atmg po , .
, . NV6512 Digital Multimeter,
API? ARATUS USED:- FET Training Ktt ' .
Connecting Pntch Cords.

THEORY:- /

\FIELD EFFECT TRANSlSTOR (FllI.T) :•• . t 1 device Its outpt\C

FEt 1s voltage con ro · .
. . . . lta e. FET is unipolacth1s meanh
charactenst1cs are controlled by applted mput vo g "' . . 1
thc1 t the current foliowing through it is only due to type of change µmtlc es.
There are many FET as under:-
1. Junction Field Effect Transistor (JFET)
2. 1\10SFET or lGFET OBS,

-iJ. Junction Field Effect Transistor (JFET)

--:1. ·N-Channttl JFET
2 . P-Channc l JFET
'\
2. MOSFET or lGFET
(i) N-Chat, 0;} (ii) P-Channel
(a) Depletion type
(i) N-Clrnnnel Iii) P-Channe\
(b) Enhancement type ' \.

.DFET CHARAC'fERJSllCS:-
This charnc leristics relates the drain cur rent (l 01 _,1, •
c\r. 1in to source voltage Vo~, for different values of gates to source voltage Y.c.s. ··--;
.
0 11 i HVIlC REGION:-
ln Lhis region lh1.~ ckain to source voltage obey ing ohm' f; iaw

Pl!NCH OFF REGION:- ~

W)th lhe incr_eases the drain to source voltage 1.. ·

drain current increases. This in turn increases the reverse bias vol1age· ac.ros'{ l
ga~e source junction. As res ult, the depletion region grows in size, there by reduc:·
th1~. effective width and :1 saturate,J value of drain ~urrent. The value of V, 1,
whic h <this occurs is called Pinch off Voltage and corresponding region is ca\! 1.
Pinch off Region. /. ,
' I
3.
1D =l, !)SS (. 1-V G;~tV,•)
:'.
2

Drain Oynan,ic RF:~1strnict· r1 '= .~ V ns/ A. In

1

Mutual ConduGtanc . g111 = ll lo / I:>. Vcs

Awplificatiun Fnctc,r J.L =/J. Vos/ A
fip1tn· i). i Fixed -hin,s cc ,

,./

(
PROCEDURR:- ·

a. Make lht circuil as show1, in lig, Rotate V,,s llu; ldl '.,ICk of lhc p;111cl
lo the extreme an lie lockw1sc dircct1011 .
b. Connect the mains lead to the nearcsl mains sockcl .
c. Keep the power ON/OFF switch to 'ON' position The 1eyv,el light 011
ti1c left hnnd will glow.
l11crease lhe drain voltage Vos by rotating the knol in dock_w-i§c
~ction , in suitable steps of say 1 voll. Note down th corresponding
•1.1rrent (l D)-
--~e VOS in suitable steps from -1 V to -2V, .$V &
i
repeat the above step-4.
Vos characteristics at different gut vol~c1gc.

=-=~~~~i -~.y~·
-- - · - - · • - -.. - .... - · - - - ... · - ·--·----·- _,,.., - - · -1

Hmm Current II) lN (mA)

??(V) __ ½;;~,y-~1-·~(-;s~jl~~; _--2'_~:~~-;
· ·,
;zy,
o.on . . . •
__,______ ·,... .. ··- -· --- --------- -·-- --t------- ··-· ····----
0.20 • l- ' ' • I
---· --- - ---- ·- - · - · - _,.__ 1,

0.40 I
_4 -t-• • ~~~10 _ .t ___'. . . . .:. . r . . • • • _· ...

5 ,\ "'/'
.. ··•· -· ·- - . - ·- - ---- - - - - - - + - -
(, 7..
.. ·-.•-·-·-·..·- -- ......... .
7 J
··----·-·-· -·-· ,,._ ·--- ~- ..... __ --
~

8 .: I '
- ~ - - -·------- ..• ··- .. . - ·-- ...... - - - __ · ·- · ·--- -~-- "·--- - ·--·-···~·-
9 ----S ---·----·r
------·
-
rn ,1,
... - . -- -· --- ·--- - -- ..
ll ~ - -·7 ·----- -·--· .. --
--
---· -
--·
- -

,
-
•

_____ .
.. I
.. ·- ------·-
•f

----~,·- - ·------·- -----·.

, ,. ---
---·--· -- -·-

h'~ES ULT:-•·'?'l\e·· Dr:1i11 chnracteri::.:tics of Cornrnon '~ut 1-ce is pioUed on the 1

~ h. pa Iii~ r.
I
----
X"IUff.' A UTI ON:- /
.

1. Rcadi'ng ~;hould be obscn:ed cl.:;;1rly.

?.. f'rnu1edinn '-:ho,dd l·-c rigJ1l ,~ light
3. ~-,wil<.;h ON v, 1 hc11 l~ircuil' 1s CPIIC< 1.

:·'

.,
r
 ....
I
- 1
rr~ ,,..
~
~
-
~
G°' . b, t;<::'
,,
<. "'l \ ""· ~ . ..J...!
. t
. ~~ i;. ~ L.e
~ /.;J I 0
i~
~~ ~
r\ '\:> 1' I' r..N.
1
<'

.. ' . .' p t:. "\,~

~
-
rr-
,.
L? ~
. ~
,I
~<:
1,,
' ....'
~

l/-:J
"·. ., J
,;
",.,,)
f,,Jfj
~
~¾i
_;-~
II;
~-~
C
9i.~
~
~

"
• ~ ~
--
l c:-,,,• n '
~<
- --
...,•
-
I"') G'
...
t,~
~
,_
~
,,
<
- en
~

(}'
,. ~

~ ~ rs
~ ~
r/) ,"\ .., 1( {'\. ~
I "".
,{-,,., }.5-)
£"' -.t

r v.f. '\ f
\,......i 'l ~
. r~
....... }',,
I
~
. .
(~ 0
~
\

'"\
• ,.
(
.,
~
~

...,
ci.:,,,.,,... i .,, ?) 0 tr .,.L
\