Preliminary Technical Information

GenX3TM 600V IXGK320N60B3 VCES = 600V

IGBTs IXGX320N60B3 IC90 = 320A
VCE(sat) ≤ 1.6V
Medium-Speed Low-Vsat PT
IGBTs for 5-40 kHz Switching
TO-264 (IXGK)

G
Symbol Test Conditions Maximum Ratings C
E
VCES TJ = 25°C to 150°C 600 V
Tab
VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V
VGES Continuous ±20 V
PLUS247 (IXGX)
VGEM Transient ±30 V
IC25 TC = 25°C ( Chip Capability ) 500 A
IC90 TC = 90°C 320 A
ILRMS Terminal Current Limit 160 A
G
ICM TC = 25°C, 1ms 1200 A C
E Tab
SSOA VGE = 15V, TVJ = 125°C, RG = 1Ω ICM = 320 A
(RBSOA) Clamped Inductive Load VCE < VCES V G = Gate E = Emitter
PC TC = 25°C 1700 W C = Collector Tab = Collector

TJ -55 ... +150 °C

TJM 150 °C
Tstg -55 ... +150 °C Features
TL Maximum Lead Temperature for Soldering 300 °C
z
TSOLD 1.6 mm (0.062 in.) from Case for 10 260 °C Optimized for Low Conduction and
Switching Losses
Md Mounting Torque ( IXGK ) 1.13/10 Nm/lb.in. z
High Current Capability
FC Mounting Force ( IXGX ) 20..120/4.5..27 N/lb. z
Square RBSOA
Weight TO-264 10 g
PLUS247 6 g
Advantages

z
High Power Density
z
Low Gate Drive Requirement
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 1mA, VGE = 0V 600 V Applications

VGE(th) IC = 4mA, VCE = VGE 3.0 5.0 V z

Power Inverters
z
ICES VCE = VCES, VGE = 0V 75 μA UPS
z
TJ = 125°C 2 mA Motor Drives
z
SMPS
IGES VCE = 0V, VGE = ± 20V ±400 nA z
PFC Circuits
z
VCE(sat) IC = 100A, VGE = 15V, Note 1 1.4 1.6 V Battery Chargers
IC = 320A 2.0 V z
Welding Machines
z
Lamp Ballasts

© 2010 IXYS CORPORATION, All Rights Reserved DS100157A(05/10)

 IXGK320N60B3
IXGX320N60B3
Symbol Test Conditions Characteristic Values TO-264 AA ( IXGK) Outline
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 60A, VCE = 10V, Note 1 70 125 S

Cies 18 nF
Coes VCE = 25V, VGE = 0V, f = 1MHz 960 pF
Cres 130 pF

Qg 585 nC
Qge IC = 320A, VGE = 15V, VCE = 0.5 • VCES 105 nC
Qgc 215 nC Back Side
1 - Gate
2, 4 - Collector
td(on) 44 ns 3 - Emitter

tri Inductive Load, TJ = 25°C 66 ns Dim. Millimeter Inches

Min. Max. Min. Max.
Eon 2.7 mJ A 4.82 5.13 .190 .202
IC = 100A,VGE = 15V A1 2.54 2.89 .100 .114
td(off) 250 ns A2 2.00 2.10 .079 .083
tfi VCE = 0.8 • VCES, RG = 1Ω 165 ns b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
Eoff 3.5 5.0 mJ b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
td(on) 40 ns E 19.81 19.96 .780 .786
tri Inductive Load, TJ = 125°C 67 ns e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
Eon IC = 100A,VGE = 15V 3.5 mJ K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
td(off) 330 ns L1 2.29 2.59 .090 .102
tfi VCE = 0.8 • VCES, RG = 1Ω 265 ns P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Eoff 5.4 mJ Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
RthJC 0.073 °C/W R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
RthCS 0.15 °C/W
T 1.57 1.83 .062 .072

PLUS247TM (IXGX) Outline

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Terminals: 1 - Gate
2 - Collector
PRELIMINARY TECHNICAL INFORMATION 3 - Emitter

The product presented herein is under development. The Technical Specifications offered are derived Dim. Millimeter Inches
from data gathered during objective characterizations of preliminary engineering lots; but also may yet Min. Max. Min. Max.
contain some information supplied during a pre-production design evaluation. IXYS reserves the right A 4.83 5.21 .190 .205
to change limits, test conditions, and dimensions without notice. A1 2.29 2.54 .090 .100
A2 1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b1 1.91 2.13 .075 .084
b2 2.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. R 4.32 4.83 .170 .190

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXGK320N60B3
IXGX320N60B3

Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Output Characteristics @ T J = 125ºC

350 350
VGE = 15V VGE = 15V
11V 11V
300 9V 300 9V 8V

8V
250 250
7V
IC - Amperes

IC - Amperes
200 200
7V

150 150

6V
100 100

6V
50 50
5V
5V
0 0
0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5
VCE - Volts VCE - Volts

Fig. 3. Dependence of VCE(sat) on Fig. 4. Collector-to-Emitter Voltage

Junction Temperature vs. Gate-to-Emitter Voltage
1.5 3.5

VGE = 15V TJ = 25ºC

1.4
3.0
1.3 I = 320A
C
VCE(sat) - Normalized

1.2
2.5
VCE - Volts

I C = 320A
1.1
I C = 160A
2.0
1.0
160A
0.9
1.5
0.8 I C = 80A 80A

0.7 1.0
-50 -25 0 25 50 75 100 125 150 5 6 7 8 9 10 11 12 13 14 15
TJ - Degrees Centigrade VGE - Volts

Fig. 5. Input Admittance Fig. 6. Transconductance

300 280
TJ = - 40ºC

240
250

TJ = 125ºC
200 25ºC
25ºC
200
g f s - Siemens

- 40ºC
IC - Amperes

160 125ºC
150
120

100
80

50 40

0 0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 50 100 150 200 250 300 350
VGE - Volts IC - Amperes

© 2010 IXYS CORPORATION, All Rights Reserved

 IXGK320N60B3
IXGX320N60B3

Fig. 7. Gate Charge Fig. 8. Capacitance

16 100,000

VCE = 300V f = 1 MHz

14
I C = 320A
I G = 10mA

Capacitance - PicoFarads
12 10,000 Cies

10
VGE - Volts

8 1,000

Coes
6

4 100
Cres
2

0 10
0 100 200 300 400 500 600 0 5 10 15 20 25 30 35 40
QG - NanoCoulombs VCE - Volts

Fig. 9. Reverse-Bias Safe Operating Area Fig. 10. Maximum Transient Thermal Impedance
350 0.1

300

250
Z(th)JC - ºC / W
IC - Amperes

200
0.01
150

100
TJ = 125ºC
50 RG = 1Ω
dv / dt < 10V / ns

0 0.001
100 150 200 250 300 350 400 450 500 550 600 650 0.00001 0.0001 0.001 0.01 0.1 1
VCE - Volts Pulse Width - Second

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
 IXGK320N60B3
IXGX320N60B3
Fig. 11. Inductive Switching Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance Energy Loss vs. Collector Current
8 8 8 4.5

Eoff Eon - --- 7

Eoff Eon ---- 4
7 7
TJ = 125ºC , VGE = 15V RG = 1Ω , VGE = 15V
VCE = 480V 6 VCE = 480V 3.5
6 6
I C = 100A

Eoff - MilliJoules
Eon - MilliJoules
Eoff - MilliJoules

Eon - MilliJoules
5 5 5 3
TJ = 125ºC
4 4 4 2.5

3 3 3 2

2 2 2 1.5
I C = 50A
TJ = 25ºC
1 1 1 1

0 0 0 0.5
1 2 3 4 5 6 7 8 9 10 50 55 60 65 70 75 80 85 90 95 100

RG - Ohms IC - Amperes

Fig. 13. Inductive Switching Fig. 14. Inductive Turn-off

Energy Loss vs. Junction Temperature Switching Times vs. Gate Resistance
8 4.5 300 1100

Eoff Eon ---- 290 tfi td(off) - - - - 1000

7 4
RG = 1Ω , VGE = 15V TJ = 125ºC, VGE = 15V
VCE = 480V 280 VCE = 480V 900
6 I C = 100A 3.5

t d(off) - Nanoseconds
t f i - Nanoseconds

270 800
Eon - MilliJoules
Eoff - MilliJoules

5 3
260 700
4 2.5 I C = 100A
250 600
3 2 I C = 50A
240 500

2 1.5
230 400
I C = 50A
1 1 220 300

0 0.5 210 200

25 35 45 55 65 75 85 95 105 115 125 1 2 3 4 5 6 7 8 9 10
TJ - Degrees Centigrade RG - Ohms

Fig. 15. Inductive Turn-off Fig. 16. Inductive Turn-off

Switching Times vs. Collector Current Switching Times vs. Junction Temperature
350 420 300 340

325 tfi td(off) - - - - 400 280 tfi td(off) - - - - 330

RG = 1Ω , VGE = 15V RG = 1Ω , VGE = 15V
300 380 260 320
VCE = 480V VCE = 480V
t d(off) - Nanoseconds

275 360 240 310

t d(off) - Nanoseconds
t f i - Nanoseconds

t f i - Nanoseconds

I C = 100A
250 340 220 300
TJ = 125ºC
225 320 200 290

200 300 180 280

175 280 160 270

I C = 50A
150 260 140 260
TJ = 25ºC
125 240 120 250

100 220 100 240

50 55 60 65 70 75 80 85 90 95 100 50 55 60 65 70 75 80 85 90 95 100
IC - Amperes TJ - Degrees Centigrade

© 2010 IXYS CORPORATION, All Rights Reserved

 IXGK320N60B3
IXGX320N60B3
Fig. 17. Inductive Turn-on Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance Switching Times vs. Collector Current
140 100 80 46

tri td(on) - - - - tri td(on) - - - -

120 90
TJ = 125ºC, VGE = 15V 70 RG = 1Ω , VGE = 15V 44
VCE = 480V I VCE = 480V
C = 100A TJ = 25ºC
100 80

t d(on) - Nanoseconds
t d(on) - Nanoseconds
t r i - Nanoseconds

t r i - Nanoseconds
60 42

80 70
50 40
60 60

40 TJ = 125ºC 38
40 50
I C = 50A
30 36
20 40

0 30 20 34
1 2 3 4 5 6 7 8 9 10 50 55 60 65 70 75 80 85 90 95 100
RG - Ohms IC - Amperes

Fig. 19. Inductive Turn-on

Switching Times vs. Junction Temperature
100 50

90 tri td(on) - - - - 48
RG = 1Ω , VGE = 15V
80 46
VCE = 480V
t d(on) - Nanoseconds
t r i - Nanoseconds

70 44

60 I C = 100A 42

50 40

40 38
I C = 50A
30 36

20 34

10 32
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: G_320N60B3(96)5-14-10

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