Transistor As A Switch - Using Transistor Switching
Transistor As A Switch - Using Transistor Switching
Transistor switches can be used to switch a low voltage DC device (e.g. LED’s)
ON or OFF by using a transistor in its saturated or cut-off state
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Solid state switches are one of the main applications for the use of transistor
to switch a DC output “ON” or “OFF”. Some output devices, such as LED’s only
require a few milliamps at logic level DC voltages and can therefore be driven
directly by the output of a logic gate. However, high power devices such as
motors, solenoids or lamps, often require more power than that supplied by
an ordinary logic gate so transistor switches are used.
If the circuit uses the Bipolar Transistor as a Switch, then the biasing of the
transistor, either NPN or PNP is arranged to operate the transistor at both
sides of the ” I-V ” characteristics curves we have seen previously.
The areas of operation for a transistor switch are known as the Saturation
Region and the Cut-off Region. This means then that we can ignore the
operating Q-point biasing and voltage divider circuitry required for
amplification, and use the transistor as a switch by driving it back and forth
between its “fully-OFF” (cut-off) and “fully-ON” (saturation) regions as shown
below.
Operating Regions
The pink shaded area at the bottom of the curves represents the “Cut-off”
region while the blue area to the left represents the “Saturation” region of the
transistor. Both these transistor regions are defined as:
1. Cut-off Region
Here the operating conditions of the transistor are zero input base current ( IB
), zero output collector current ( IC ) and maximum collector voltage ( VCE )
which results in a large depletion layer and no current flowing through the
device. Therefore the transistor is switched “Fully-OFF”.
Cut-off Characteristics
Then we can define the “cut-off region” or “OFF mode” when using a bipolar
transistor as a switch as being, both junctions reverse biased, VB < 0.7v and
IC = 0. For a PNP transistor, the Emitter potential must be negative with
respect to the Base.
2. Saturation Region
Here the transistor will be biased so that the maximum amount of base
current is applied, resulting in maximum collector current resulting in the
minimum collector emitter voltage drop which results in the depletion layer
being as small as possible and maximum current flowing through the
transistor. Therefore the transistor is switched “Fully-ON”.
Saturation Characteristics
Then we can define the “saturation region” or “ON mode” when using a
bipolar transistor as a switch as being, both junctions forward biased,
VB > 0.7v and IC = Maximum. For a PNP transistor, the Emitter potential
must be positive with respect to the Base.
The simplest way to switch moderate to high amounts of power is to use the
transistor with an open-collector output and the transistors Emitter terminal
connected directly to ground. When used in this way, the transistors open
collector output can thus “sink” an externally supplied voltage to ground
thereby controlling any connected load.
The circuit resembles that of the Common Emitter circuit we looked at in the
previous tutorials. The difference this time is that to operate the transistor as a
switch the transistor needs to be turned either fully “OFF” (cut-off) or fully
“ON” (saturated).
An ideal transistor switch would have infinite circuit resistance between the
Collector and Emitter when turned “fully-OFF” resulting in zero current
flowing through it and zero resistance between the Collector and Emitter
when turned “fully-ON”, resulting in maximum current flow.
In practice when the transistor is turned “OFF”, small leakage currents flow
through the transistor and when fully “ON” the device has a low resistance
value causing a small saturation voltage ( VCE ) across it. Even though the
transistor is not a perfect switch, in both the cut-off and saturation regions the
power dissipated by the transistor is at its minimum.
In order for the Base current to flow, the Base input terminal must be made
more positive than the Emitter by increasing it above the 0.7 volts needed for
a silicon device. By varying this Base-Emitter voltage VBE, the Base current is
also altered and which in turn controls the amount of Collector current
flowing through the transistor as previously discussed.
The next lowest preferred value is: 82kΩ, this guarantees the transistor
switch is always saturated.
Here, the output from a digital logic gate is only +5v but the device to be
controlled may require a 12 or even 24 volts supply. Or the load such as a DC
Motor may need to have its speed controlled using a series of pulses (Pulse
Width Modulation). transistor switches will allow us to do this faster and more
easily than with conventional mechanical switches.
The base resistor, Rb is required to limit the output current from the logic
gate.
The equations for calculating the Base resistance, Collector current and
voltages are exactly the same as for the previous NPN transistor switch. The
difference this time is that we are switching power with a PNP transistor
(sourcing current) instead of switching ground with an NPN transistor
(sinking current).
The overall current gain Beta (β) or hfe value of a Darlington device is the
product of the two individual gains of the transistors and is given as:
So Darlington Transistors with very high β values and high Collector currents
are possible compared to a single transistor switch. For example, if the first
input transistor has a current gain of 100 and the second switching transistor
has a current gain of 50 then the total current gain will be 100 * 50 = 5000.
So for example, if our load current from above is 200mA, then the darlington
base current is only 200mA/5000 = 40uA. A huge reduction from the
previous 1mA for a single transistor.
The first or “input” transistor receives the input signal to its Base. This
transistor amplifies it in the usual way and uses it to drive the second larger
“output” transistors. The second transistor amplifies the signal again resulting
in a very high current gain. One of the main characteristics of Darlington
Transistors is their high current gains compared to single bipolar transistors.
In the next tutorial about Transistors, we will look at the operation of the
junction field effect transistor known commonly as an JFET. We will also plot
the output characteristics curves commonly associated with JFET amplifier
circuits as a function of Source voltage to Gate voltage.
1. Bipolar Transistor
2. NPN Transistor
3. PNP Transistor
4. Transistor as a Switch
5. Junction Field Effect Transistor
6. The MOSFET
7. MOSFET as a Switch
8. Transistor Tutorial Summary
9. Darlington Transistors
10. FET Current Source
11. Open Collector Outputs
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Agwu
Good one
Good work
Thanks
Plagiarized. Copied word to word from this website and document. Shame on
you for not giving credit to the original authors.
https://www.google.com/url?
q=https://www.pitt.edu/~qiw4/Academic/ME2082/Transistor%2520Basics.pdf&sa=U&ved=2ahUKEwif8sOUu6jxAhWV7XMBHRnpCS0QFjAAegQICRAB&u
Actually Mr Anonymous, if you bother to look closer you will find that the
University of Pittsburgh have copied and plagiarised our website content.
Even the links point back to this website.
We will contact them about this issue and feel sorry for the students paying
money to be taught by people who have no knowledge of their subjects.
Super
Thanks
Well explanatory
Great
Super
Interesting!
Very good
Thank you. It helps to work with sharp tools and this is like a leather strap to a
straight razor.