Philips Semiconductors
Power Diodes Introduction
NEW PRODUCTS FORTHCOMING PRODUCTS
Philips Semiconductors are working intensively on
bringing new Power Diode products to the market. The
products listed below appear for the first time in this data The products listed below are planned for release within
handbook. the next 12 months, before the next edition of this data
handbook. Contact your Philips Regional or National
25 V SCHOTTKY DIODES Sales office for further details.
A range of low voltage schottky diodes with a reverse
voltage rating of 25 V, with extremely low forward voltage
and ultra fast switching. These products are intended for SURFACE MOUNT POWER DIODES IN SOT428
use in switched mode power supplies with 3 V and 3.3 V
outputs. They are also ideal for use as or-ing diodes in Available towards the end of 1996, a range of schottky
fault tolerant designs or current sharing configurations. and 200 V epitaxial diodes in a SOT428 envelope suitable
Types: BYV116, PBYR225CT, PBYR1025, for surface mounting. The SOT428 envelope is slightly
PBYR1525CT, PBYR2025CT, PBYR2525CT. larger than our present subminiature surface mounting
package, SOT223 and may be mounted on the same
DEFLECTION DIODES printed circuit pad layout. However, it has lower thermal
Further extensions to our range of high voltage, fast resistance and can accommodate larger crystal sizes,
recovery diodes, designed for use in the horizontal thereby allowing higher current ratings to be achieved in
deflection stages of multisync computer monitors with a smaller package.
scan rates up to 82 kHz. These devices complement our
range of high voltage bipolar deflection transistors and
have fast forward recovery time, low forward recovery SCHOTTKY AND 200 V EPITAXIAL DIODES IN TO247
voltage and reverse voltage ratings up to 1700 V. Types:
BY479X-1700, BY559-1500. Available during the first quarter of 1997, a range of
schottky and 200 V epitaxial diodes in a TO247 envelope
ISOLATED 45 V SCHOTTKY AND 200 V EPITAXIAL DIODES suitable for high power applications, featuring low thermal
A wide range of 45 V schottky diodes and 200 V ultrafast resistance and output current ratings up to 60 Amps.
recovery epitaxial diodes in the SOT186A envelope. This
package is an isolated version of TO220AB with POWER FACTOR CORRECTION DIODES
2500 Vrms isolation between leads and case. Types:
BYV118X, BYV133X, BYV143X, PBYR745X,
PBYR1045X, PBYR1545CTX, PBYR1645X, Available during the first quarter of 1997, a range of
PBYR2045CTX, PBYR2545CTX, BYQ28X, BYQ28EX, ultrafast, 600 V epitaxial diodes specifically designed for
BYW29EX, BYV32EX, BYV42EX, power factor correction and other forced commutation
applications. These diodes are designed to minimise
SURFACE MOUNT POWER DIODES IN SOT404 switching losses both in the diode and in the switching
A wide range of schottky and 200 V epitaxial diodes in a transistor. Other applications include freewheeling diodes
SOT404 envelope suitable for surface mounting. This in full and half bridge switched mode power supplies,
package is a surface mounting version of TO220AB with where they complement our new range of 400 V, 500 V
the same thermal resistance and current rating. Types: and 600 V power mosfets.
BYV118B, BYV143B, PBYR745B, PBYR1045B,
PBYR10100B, PBYR1545CTB, PBYR1645B, APPLICATIONS
PBYR2045CTB, PBYR20100CTB, PBYR2545CTB,
BYQ28EB, BYW29EB, BYV32EB, BYV42EB, BYV79EB.
SURFACE MOUNT BREAKOVER DIODES IN SOD106
The BR211 range of breakover diodes in a SOD106 Application information for Power Diodes and other
surface mounting envelope. Used for transient Philips power products is published in Philips Power
overvoltage protection in line based telecommunications
Semiconductor Applications Handbook. (Order
equipment. BR211SM series. code: 9398-652-85011)
September 1996
Philips Semiconductors
Power Diodes Introduction
POWER DIODE CHARACTERISTICS ’barrier height’. Philips process minimises forward voltage
drop, whilst maintaining reverse leakage current at full
Back diffused rectifier diodes rated working voltage and Tj max at an acceptable level.
A single-diffused P-N diode with a two layer structure Philips range of power schottky-barrier diodes can
cannot combine a high forward current density with a high withstand reverse voltage transients and have
reverse blocking voltage. guaranteed reverse surge capability.
A way out of this dilemma is provided by the three layer Power diode ratings
structure, the so-called P-I-N diode, where ’I’ is a lightly A rating is a value that establishes either a limiting
doped (nearly intrinsic) layer. This layer, called the base, capability or a limiting condition for an electronic device.
is sandwiched between the highly doped diffused P+ and It is determined for specified values of environment and
N+ outer layers giving a P+-P-N+ or P+-N-N+ structure. operation, and may be stated in any suitable terms.
Generally, the base gives the diode its high reverse Limiting conditions may be either maxima or minima.
voltage, and the two diffused regions give the high forward
current rating. All limiting values quoted in this data handbook are
Absolute Maximum Ratings - limiting values of operating
Such a three layer diode can be realised using a and environmental conditions applicable to any device of
’back-diffused’ structure. A lightly doped silicon wafer is a specified type, as defined by its published data, which
given a very long N+ diffusion on one side, followed by a should not be exceeded under the worst probable
relatively shallow P+ diffusion on the opposite side. This conditions.
asymmetric diffusion allows better control of the thickness
of the base layer than the conventional double diffusion VOLTAGE RATINGS
method, resulting in a better trade-off between low forward VRSM Non-repetitive peak reverse voltage. The maximum
voltage and high reverse blocking voltage. Generally, for allowable instantaneous reverse voltage including
a given silicon area, the thicker the base layer the higher all non-repetitive transients. duration ≤ 10 ms.
the VR and the lower the IF. Reverse switching
characteristics also determine the base design. Fast VRRM Repetitive peak reverse voltage. The maximum
recovery diodes usually have N-type base regions to give allowable instantaneous reverse voltage including
’soft’ recovery with a narrow base layer to give fast transients which occur every cycle,
switching. duration ≤ 10 ms, duty cycle ≤ 0.01.
Ultra fast rectifier diodes VRWM Crest working reverse voltage. The maximum
allowable instantaneous reverse voltage including
Ultra fast rectifier diodes, made by epitaxial technology, transients which may be applied every cycle
are intended for use in applications where low conduction exluding all repetitive and non-repetitive transients.
and switching losses are of paramount importance and
relatively low reverse blocking voltage (VRWM = 150V) is VR Continuous reverse voltage. The maximum
required: e.g. Switched mode power supplies operating allowable constant reverse voltage. Operation at
at frequencies of about 50 kHz. rated VR may be limited to junction temperatures
below Tj max in order to prevent thermal runaway.
The use of epitaxial technology means that there is very CURRENT RATINGS
close control over the almost ideal diffusion profile and
base width giving very high carrier injection efficiencies IF(AV) Average forward current. Specified for either
leading to lower conduction losses than conventional square or sinusoidal current waveforms at a
technology permits. The well defined diffusion profile also maximum mounting base or heatsink temperature.
allows a tight control of stored minority carriers in the base The maximum average current which may be
region, so that very fast turn-off times (35 ns) can be passed through the device without exceeding Tj max.
achieved. The range of devices also has a soft reverse IF(RMS) Root mean square current. The rms value of a
recovery and a low forward recovery voltage. current waveform is the value which causes the
Schottky-barrier rectifier diodes same dissipation as the equivalent d.c. value.
IFRM Repetitive peak forward current. The maximum
Schottky-barrier rectifiers find application in low-voltage
allowable peak forward current including transients
switched-mode power supplies (e.g. a 5 V output) where
they give an increase in efficiency due to the very low which occur every cycle. The junction temperature
should not exceed Tj max during repetitive current
forward drop, and low switching losses. Power Schottky
transients.
diodes are made by a metal-semiconductor barrier
process to minimise forward voltage losses, and being IFSM Non-repetitive forward current. The maximum
majority carrier devices have no stored charge. They are allowable peak forward current which may be
therefore capable of operating at extremely high speeds. applied no more than 100 times in the life of the
Electrical performance in forward and reverse conduction device. Usually specified with reapplied VRWM
is uniquely defined by the device’s metal-semiconductor following the surge.
September 1996
Philips Semiconductors
Power Diodes Introduction
IRRM Repetitive peak reverse current. The maximum
allowable peak reverse current including transients IF / A
50
which occur every cycle.
IRSM Non-repetitive reverse current. The maximum 40
allowable peak reverse current which may be
applied no more than 100 times in the life of the
device. 30
slope Rs
Forward current ratings
20
The forward voltage/ current characteristic of a diode may
be approximated by a piecewise linear model as shown
in fig:1. where RS is the slope of the line which passes 10
through the rated current and VO is the voltage axis Vo
intercept. The forward voltage is then VF = VO + IF.RS, and 0
the instantaneous dissipation is PF = VO.IF + IF2.RS. where 0 0.5 1.0 1.5
IF is the instantaneous forward current. VF / V
Fig.1. Piecewise linear approximation to diode
It can be shown that the average forward dissipation for forward characteristic.
any current waveform is: PF(AV) = VO.IF(AV) + IF(RMS)2.RS,
where IF(AV) is the average forward current and IF(RMS) is
the rms value of the forward current. Graphs in the Power diode characteristics
published data show forward dissipation as a function of A characteristic is an inherent and measurable property
average current for square or sinusoidal waveforms over of a device. Such a property may be expressed as a value
a range of duty cycles and form factors. for stated or recognized conditions. A characteristic may
also be a set of related values, usually shown in graphical
To ensure reliable operation, the maximum allowable form.
junction temperature Tj max should not be exceeded
repetitively, either as a result of the average dissipation REVERSE RECOVERY
in the device or as a result of high peak currents When a semiconductor rectifier diode has been
conducting in the forward direction sufficiently long to
The average junction temperature rise is the average establish the steady state, there will be a charge due to
dissipation multiplied by the thermal resistance; Rth j-mb or minority carriers present. Before the device can block in
Rth j-hs. Subtracting the junction temperature rise from the the reverse direction this charge must be extracted. This
maximum allowable junction temperature Tj max, gives the extraction takes the form of a transient reverse current
maximum allowable mounting base or heatsink and this, together with the reverse bias voltage results in
temperature. additional power dissipation which reduces the
rectification efficiency. At sine-wave frequencies up to
The peak junction temperature rise for a rectangular about 400Hz these effects can often be ignored, but at
current pulse may be found by multiplying the higher frequencies and for square waves the switching
instantaneous power by the thermal impedance. Analysis losses must be considered. The parameters of reverse
methods for non-rectangular pulses are covered in the recovery are defined in fig:2.
Power Semiconductor Applications handbook.
Stored charge
The area under the IR versus time curve is known as the
stored charge (Qs) and is normally quoted in
microcoulombs or nanocoulombs. Low stored charge
devices are preferred for fast switching applications.
Reverse recovery time
Another parameter which can be used to determine the
speed of the rectifier is the reverse recovery time (trr). This
is measured from the instant the current passes through
zero (from forward to reverse) to the instant the current
recovers to either 10% or 25% of its peak reverse value.
Low reverse recovery times are associated with low
stored charge devices.
The conditions which need to be specified are:
a. Steady-state forward current (IF); high currents
increase recovery time.
September 1996
Philips Semiconductors
Power Diodes Introduction
b. Reverse bias voltage (VR); low reverse voltage dissipation to give the total power. The peak value of
increases recovery time. transient reverse current is known as Irrm. The origin of
reverse recovery losses is illustrated in fig:3.
c. Rate of fall of anode current (dIF/dt); high rates of fall
reduce recovery time, but increase stored charge.
The conditions which need to be specified are:
d. Junction temperature (Tj); high temperatures increase
both recovery time and stored charge. a. Forward current (IF); high currents increase switching
losses.
dI b. Rate of fall of anode current (dIF/dt); high rates of fall
I F increase switching losses. This is particularly important
F
dt in square-wave operation. Power losses in sine-wave
operation for a given frequency are considerably less
trr due to the much lower dIF/dt.
c. Frequency (f); high frequency means high losses.
time
d. Reverse bias voltage (VR); high reverse bias means
high losses.
Qs 100% e. Junction temperature (Tj); high temperature means
25% or 10% high losses.
I
R I
rrm IF -dIF/dt
area = Qs
trr
Fig.2. Definition of trr, Qs and Irrm time
IR
Softness of recovery Irrm
In many switching circuits it is not just the magnitude but VF
the shape of the reverse recovery characteristic that is
important. If the positive-going edge of the characteristic
has a fast rise time (as in a so-called ’snap-off’ device)
this edge may cause conducted or radiated radio
frequency interference (rfi), or it may generate high VR
voltages across inductors which may be in series with the
rectifier. The maximum slope of the reverse recovery
VR
current (dIR/dt) is quoted as a measure of the ’softness’
of the characteristic. Low values are less liable to give rfi Fig.3. Waveforms showing the origin of reverse
problems. The measurement conditions which need to be switching losses.
specified are as above.
Reverse recovery current FORWARD RECOVERY
The peak value of the reverse recovery current (Irrm) is an At the instant a semiconductor rectifier diode is switched
important parameter in many switched mode power into forward conduction there are no carriers present at
supply circuits. This is because the high transient current the junction, hence the forward voltage drop may be
produced by a diode with a high Irrm can be interpreted by instantaneously of a high value. As the stored charge
the circuit as a short circuit fault, which may cause the builds up, conductivity modulation takes place and the
power supply to shut down or have apparently poor load forward voltage rapidly falls to the steady state value. The
regulation. Like the stored charge and reverse recovery peak value of forward voltage drop is known as the forward
time, Irrm increases with increasing temperature, so the recovery voltage (Vfr). The time from the instant the current
effects sometimes only become apparent when the reaches 10% of its steady-state value to the time the
equipment gets hot. Irrm correlates with stored charge Qs. forward voltage drops below a given value ( usually 5V or
Thus choosing an Ultrafast diode with low Qs usually 2V) is known as the forward recovery time (tfr). The forward
avoids this problem. recovery parameters are defined in fig:4.
SWITCHING LOSSES The conditions which need to be specified are:
The product of the transient reverse current and the a. Forward current (IF); high currents give high recovery
reverse voltage is power dissipation, most of which occurs voltages.
whilst the reverse recovery current is decreasing from the
peak value (Irrm) to zero. In repetitive operation an average b. Current pulse rise time (tr); short rise times give high
power can be calculated and added to the forward recovery voltages.
September 1996
Philips Semiconductors
Power Diodes Introduction
c. Junction temperature (Tj); The influence of V(BO) Breakover voltage, the maximum voltage
temperature is slight. appearing across the BOD before switching to the
on-state.
I VD Stand-off voltage, maximum normal operating
F
voltage.
ID Off-state current, normally quoted at VD.
V(BR) Breakdown voltage, below which the BOD will not
10%
go into avalanche breakdown.
tfr time
I(BR) Breakdown current, with V(BR) applied.
VF
IS Switching current, the avalanche current required
to switch the BOD to the on-state.
V
fr
5V / 2V IT On-state current.
VF
VT On-state voltage, specified at a given IT.
time
IH Holding current, the minimum current at which the
Fig.4. Definition of Vfr and tfr BOD will remain in the on-state.
USE OF BREAKOVER DIODES
Breakover diodes
BOD’s are primarily designed to protect electronic
Breakover diodes (BOD’s) are two terminal devices that equipment connected to transmission lines against
operate in either an off (non-conducting) or an on transient overvoltages. However, there are many uses for
(conducting) state. A BOD will remain in the off state until BOD’s as breakover switches.
the maximum breakover voltage is applied across its
terminals. A BOD will then conduct with a low on-state In designing BOD circuits the following must be
voltage until the current is reduced below the minimum considered:-
holding current.
Off-state conditions
BOD’s are available as Single Symmetric (operation in
1st and 3rd quadrants) in a hermetically sealed axial VD Must not be exceeded in normal off-state
leaded SOD84 envelope, and also in a surface mount operation. In the off-state the BOD will not pass
SOD106 package. BOD’s are graded according to more current than ID.
breakover voltage. dVD/dt The rate of rise of voltage must not exceed that
BREAKOVER DIODE CHARACTERISTICS quoted for the device. If this is exceeded the BOD
may switch to the on-state.
VT
current V(BR) To ensure the BOD remains in the off-state, the
IT voltage must remain below V(BR) min. If this is
exceeded, the BOD will either clip the voltage or
switch to the on-state.
IS
IH V(BR) IS If V(BR) is exceeded but the current limited to below
V(BO)
I(BR)
IS minimum, the BOD is prevented from switching
ID
to the on-state.
voltage
VD Cj The off-state capacitance across the BOD. In
transmission line protection applications this will
be across the termination of the line.
Switching conditions
Symbol
Symmetric BOD
V(BO) A transient voltage greater than V(BO) max is required
to switch the BOD. V(BO) may be greater than the
Fig.5. Breakover diode symbol and characteristics. voltage across the BOD when it is passing a current
of IS max.
The main characteristics are illustrated in fig:5. These IS To enable the BOD to switch to the on-state a
characteristics are:- current greater than IS maximum is required.
September 1996
Philips Semiconductors
Power Diodes Introduction
On-state conditions Thermal conditions
VT The on-state voltage is quoted for a given IT Rth For extended on-state operation ( > 0.1 ms) the
steady-state thermal resistance should be
IH To enable the BOD to switch to the off-state the
considered. Total thermal resistance to ambient
current must fall below IH minimum.
should be sufficiently low to dissipate the heat
ITSM ITSM specifies the rate of rise and duration of a generated by the device.
transient peak on-state current. The waveshape is
Zth If the BOD is used only during transient
defined according to CCITT Rec. K17, illustrated in overvoltages then the transient thermal impedance
Fig:6. The waveform is referred to as 10/700 µs
to ambient should be considered.
waveform.
current
ITSM
100%
90%
50%
30%
0
time
10us 700us
Fig.6. Definition of ITSM waveform.
September 1996
Philips Semiconductors
Power Diodes Introduction
QUALITY ensure consistent processing. Monitoring of the product,
processes and the environment takes place during
Total Quality Management production.
Philips Semiconductors is
committed to be a world class, Approval exercises are run to ensure that new processes
NT
customer driven, volume supplier and new equipment perform at an acceptable level.
ME
PA
VE
of semiconductors.
R
RO
TN
Written, photographic or visual standards are available at
MP
ER
the appropriate points in the production processes.
SH
YI
To achieve this, we operate a Total
LIT
IPS
Quality Management (TQM)
A
QU
TQM
system, based on Continuous Corrective action
Improvement and Quality Non-conforming product found in process is investigated
QUALITY ASSURANCE SYSTEM
Assurance in all our business and the root causes identified. Changes to product or
activities, and Partnerships with process are then introduced to prevent recurrence of the
our customers and suppliers. problem.
The top priority throughout the company is Continuous
Improvement. Quality assurance
Based on ISO 9000 standards, customer standards such
To focus on this we will: as Ford TQE. Our factories are certified to ISO 9000.
- Work closely with key customers, as our partners.
- Monitor progress, using customer-driven data, of Partnerships with customers
our product and services.
- Benchmark against the best. These include: PPM co-operations, design-in
agreements, ship-to-stock, just-in-time, self-qualification
Furthermore, all parts of the organisation must always programmes and application support.
demonstrate:
Partnerships with suppliers
- The presence of a strong, management-led
improvement structure. In addition to ISO9000 audits and close monitoring of
- Commitment and participation in all areas. supplier delivery performance, we operate a Supplier
- Measurable progress towards our Quality Excellence Award scheme which requires suppliers and
Improvement goals. their sub-suppliers to use statistical process control,
Organisation perform gauge studies and use failure mode and effect
analysis (FMEA) techniques to identify and correct the
An organisation is in place which ensures that personnel root causes of quality and delivery problems.
with the necessary organisational freedom and authority
can identify and solve quality problems, prevent Product reliability
occurrence of product non-conformity and protect the
customer from non-conforming product. With the increasing complexity of Original Equipment
Manufacturer (OEM) equipment, component reliability
Design control must be extremely high. Our research laboratories and
A comprehensive design and development procedure is development departments study the failure mechanisms
in place which ensures that the requirements of good of semiconductors. Their studies result in design rules
design practice are met. and process optimizations for the highest built-in product
reliability. Highly accelerated tests are applied in order to
Particular emphasis is placed on ensuring that the initial evaluate the product reliability. Rejects from reliability
specification is agreed by the Customer and the tests and from customer complaints are submitted to
Marketing and Development functions. failure analysis and the results applied to improve the
product or process.
There are regular formal reviews of design progress to
ensure that the initial specification will be met by the Customer responses
design. Our quality improvement depends on joint action with our
customer. We need our customers inputs and we invite
Detailed measurements are made on initial samples to constructive comment on all aspects of our performance.
ensure that the initial specification has been met. Please contact your local sales representative.
Process control
Recognition
All processes which directly affect quality are carried out
under controlled conditions. Documented work The high quality of our products and services is
instructions are available for all production processes and demonstrated by many Quality Awards granted by major
the appropriate environmental controls are in place to customers and international organisations.
September 1996
