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Double Patterning

Double patterning is a lithography technique used to define features at advanced process nodes using current optical lithography systems. It counters diffraction effects by splitting the original mask into two masks, Mask A and Mask B, to avoid issues like shorts and opens that occur due to diffraction. However, double patterning increases mask and lithography costs and imposes restrictions on circuit layouts that affect design complexity, performance, variability and density.

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384 views

Double Patterning

Double patterning is a lithography technique used to define features at advanced process nodes using current optical lithography systems. It counters diffraction effects by splitting the original mask into two masks, Mask A and Mask B, to avoid issues like shorts and opens that occur due to diffraction. However, double patterning increases mask and lithography costs and imposes restrictions on circuit layouts that affect design complexity, performance, variability and density.

Uploaded by

razu
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Double Patterning

vlsijunction.com/2015/08/double-patterning.html

What is Double patterning?

                    Double patterning is a technique used in the lithographic process that defines


the features of integrated circuits at advanced process nodes. It will enable designers to
develop chips for manufacture on sub-nanometer process nodes using current optical
lithography systems. 

                 The downsides of using double patterning include increased mask (reticle) and
lithography costs, and the imposition of further restrictions on the ways in which circuits
can be laid out on chip. This affects the complexity of the design process and the
performance, variability and density of the resultant devices.

What does double patterning do and why do we need it?

            Double patterning counters the effects of diffraction in optical lithography, which


happens because the minimum dimensions of advanced process nodes are a fraction of
the 193nm wavelength of the illuminating light source. These diffraction effects makes it
difficult to produce accurately defined deep sub-micron patterns using existing lighting
sources and conventional masks: sharp corners and edges become blurs, and some small
features on the mask won’t appear on the wafer at all.

Here the original mask is split-ed  2 different masks like mask A and Mask B in order to
avoid diffraction effects like shorts and opens. i.e the cost of mask (lithography costs)
increases as we move to double patterning and also introduces some extra DRC Rules in
the design.
A number of
reticle enhancement techniques have been introduced to counteract the
diffraction problem as it has become more acute with each new process node.

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Phase-shift masks: were introduced at the 180nm process node. They alter the phase of
the light passing through some areas of the mask, changing the way it is diffracted and so
reducing the defocusing effect of mask dimensions that are less than the wavelength of the
illuminating light. The downside of using phase-shift techniques is that the masks are
more difficult and expensive to make.

Optical-proximity correction (OPC) techniques work out how to distort the patterns


on a mask to counter diffraction effects, for example by adding small ‘ears’ to the corners
of a square feature on the mask so that they remain sharply defined on the wafer. The
technique introduces layout restrictions, has a computational cost in design, and means
that it takes longer and costs more to make the corrected masks.

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