FDP150N10 N-Channel PowerTrench® MOSFET

July 2008

FDP150N10 tm
®
N-Channel PowerTrench MOSFET
100V, 57A, 15mΩ
Features General Description
• RDS(on) = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
• Fast switching speed
especially tailored to minimize the on-state resistance and yet
• Low gate charge maintain superior switching performance.

• High performance trench technology for extremely low RDS(on)

• High power and current handling capability Application

• RoHS compliant • DC to DC convertors / Synchronous Rectification

G
TO-220
G DS
FDP Series
S

MOSFET Maximum Ratings TC = 25oC unless otherwise noted

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 100 V
VGSS Gate to Source Voltage ±20 V
-Continuous (TC = 25oC) 57 A
ID Drain Current
-Continuous (TC = 100oC) 40 A
IDM Drain Current - Pulsed (Note 1) 228 A
EAS Single Pulsed Avalanche Energy (Note 2) 132 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 7.5 V/ns
(TC = 25oC) 110 W
PD Power Dissipation
- Derate above 25oC 0.88 W/oC
o
TJ, TSTG Operating and Storage Temperature Range -55 to +150 C
Maximum Lead Temperature for Soldering Purpose, o
TL 300 C
1/8” from Case for 5 Seconds

Thermal Characteristics
Symbol Parameter Ratings Units
RθJC Thermal Resistance, Junction to Case 1.13
o
RθCS Thermal Resistance, Case to Sink Typ. 0.5 C/W
RθJA Thermal Resistance, Junction to Ambient 62.5

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDP150N10 Rev. A
 FDP150N10 N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking Device Package Reel Size Tape Width Quantity
FDP150N10 FDP150N10 TO-220 - - 50

Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC= 25oC 100 - - V
∆BVDSS Breakdown Voltage Temperature o
ID = 250µA, Referenced to 25 C - 0.1 - V/oC
∆TJ Coefficient
VDS = 100V, VGS = 0V - - 1
IDSS Zero Gate Voltage Drain Current µA
VDS = 100V, VGS = 0V, TC = 150oC - - 500
IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250µA 2.5 - 4.5 V
RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 49A - 12 15 mΩ
gFS Forward Transconductance VDS = 20V, ID = 49A (Note 4) - 156 - S

Dynamic Characteristics
Ciss Input Capacitance - 3580 4760 pF
VDS = 25V, VGS = 0V
Coss Output Capacitance - 340 450 pF
f = 1MHz
Crss Reverse Transfer Capacitance - 140 210 pF

Switching Characteristics
td(on) Turn-On Delay Time - 47 104 ns
tr Turn-On Rise Time VDD = 50V, ID = 49A - 164 338 ns
td(off) Turn-Off Delay Time VGS = 10V, RGEN = 25Ω - 86 182 ns
tf Turn-Off Fall Time (Note 4, 5) - 83 176 ns
Qg(tot) Total Gate Charge at 10V VDS = 80V, ID = 49A - 53 69 nC
Qgs Gate to Source Gate Charge VGS = 10V - 19 - nC
Qgd Gate to Drain “Miller” Charge (Note 4, 5) - 15 - nC

Drain-Source Diode Characteristics

IS Maximum Continuous Drain to Source Diode Forward Current - - 57 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 228 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 49A - - 1.3 V
trr Reverse Recovery Time VGS = 0V, ISD = 49A - 41 - ns
Qrr Reverse Recovery Charge dIF/dt = 100A/µs (Note 4) - 70 - nC

Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.11mH, IAS = 49A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 49A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics

FDP150N10 Rev. A 2 www.fairchildsemi.com

 FDP150N10 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

500 1000
VGS = 15.0 V
*Notes:
10.0 V
1. VDS = 20V
8.0 V
2. 250µs Pulse Test
ID,Drain Current[A]

7.0 V

ID,Drain Current[A]
100 6.5 V
6.0 V 100
5.5 V o
150 C

o
25 C
10 10
*Notes:
1. 250µs Pulse Test o
o -55 C
2. TC = 25 C
2
0.02 0.1 1 10 1
3 4 5 6 7 8
VDS,Drain-Source Voltage[V]
VGS,Gate-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
30 500

25 o
Drain-Source On-Resistance

IS, Reverse Drain Current [A]

150 C
100
RDS(ON) [mΩ],

20
VGS = 10V o
25 C
15
VGS = 20V 10

10 *Notes:
o 1. VGS = 0V
*Note: TC = 25 C
2. 250µs Pulse Test
5 1
0 100 200 300 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

5000 10
Ciss *Note:
VDS = 25V
1. VGS = 0V
VGS, Gate-Source Voltage [V]

VDS = 50V
4000 2. f = 1MHz 8
VDS = 80V
Capacitances [pF]

3000 6
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
2000 Crss = Cgd 4

Crss
1000 2
*Note: ID = 49A
0 0
0.1 1 10 30 0 10 20 30 40 50 60
VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC]

FDP150N10 Rev. A 3 www.fairchildsemi.com

 FDP150N10 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature
2.4
1.15
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
2.0
1.10

RDS(on), [Normalized]
BVDSS, [Normalized]

1.6
1.05

1.2
1.00
*Notes:
1. VGS = 0V 0.8 *Notes:
0.95 2. ID = 250uA 1. VGS = 10V
2. ID = 49A

0.4
0.90 -100 -50 0 50 100 150 200
-100 -50 0 50 100 o 150 200 o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
500
70
10µs
100
60
100µs
ID, Drain Current [A]

1ms
10ms 50
ID, Drain Current [A]

10 DC
Operation in This Area 40
is Limited by R DS(on)
1
30
*Notes:
1. TC = 25 C
o 20
0.1
o
2. TJ = 150 C
10
3. Single Pulse
0.01
1 10 100 200 0
VDS, Drain-Source Voltage [V] 25 50 75 100 o 125 150
TC, Case Temperature [ C]

Figure 11. Transient Thermal Response Curve

1
Thermal Response [ZθJC]

0.5

0.2
PDM
0.1
0.1 t1
0.05 t2
*Notes:
0.02 o
0.01
1. ZθJC(t) = 1.13 C/W Max.
2. Duty Factor, D= t1/t2
Single pulse
3. TJM - TC = PDM * ZθJC(t)
0.01
-5 -4 -3 -2 -1
10 10 10 10 10 1 10
Rectangular Pulse Duration [sec]

FDP150N10 Rev. A 4 www.fairchildsemi.com

 FDP150N10 N-Channel PowerTrench® MOSFET
Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDP150N10 Rev. A 5 www.fairchildsemi.com

 FDP150N10 N-Channel PowerTrench® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

FDP150N10 Rev. A 6 www.fairchildsemi.com

 FDP150N10 N-Channel PowerTrench® MOSFET
Mechanical Dimensions

TO-220

Dimensions in Millimeters

FDP150N10 Rev. A 7 www.fairchildsemi.com

 FDP150N10 N-Channel PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
ACEx® FPS™ PDP-SPM™ The Power Franchise®
Build it Now™ F-PFS™ Power-SPM™
CorePLUS™ FRFET® PowerTrench® tm

CorePOWER™ Global Power ResourceSM Programmable Active Droop™ TinyBoost™

CROSSVOLT™ Green FPS™ QFET® TinyBuck™
CTL™ Green FPS™ e-Series™ QS™ TinyLogic®
Current Transfer Logic™ GTO™ Quiet Series™ TINYOPTO™
EcoSPARK® IntelliMAX™ RapidConfigure™ TinyPower™
EfficentMax™ ISOPLANAR™ Saving our world 1mW at a time™ TinyPWM™
EZSWITCH™ * MegaBuck™ SmartMax™ TinyWire™
™ MICROCOUPLER™ SMART START™ µSerDes™
MicroFET™ SPM®
®
tm
MicroPak™ STEALTH™
Fairchild® MillerDrive™ SuperFET™ UHC®
Fairchild Semiconductor® MotionMax™ SuperSOT™-3 Ultra FRFET™
FACT Quiet Series™ Motion-SPM™ SuperSOT™-6 UniFET™
FACT® OPTOLOGIC® SuperSOT™-8 VCX™
FAST® OPTOPLANAR® SuperMOS™ VisualMax™
®
FastvCore™ ®
FlashWriter® * tm

* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:
1. Life support devices or systems are devices or systems which, 2. A critical component in any component of a life support,
(a) are intended for surgical implant into the body or (b) device, or system whose failure to perform can be reasonably
support or sustain life, and (c) whose failure to perform when expected to cause the failure of the life support device or
properly used in accordance with instructions for use provided system, or to affect its safety or effectiveness.
in the labeling, can be reasonably expected to result in a
significant injury of the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
This datasheet contains the design specifications for product development.
Advance Information Formative or In Design
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
No Identification Needed Full Production
the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Obsolete Not In Production
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34

FDP150N10 Rev. A 8 www.fairchildsemi.com