NTE56030 & NTE56031

TRIAC, 40 Amp
TO−218 Isolated Tab

Description:
The NTE56030 and NTE56031 are 40 Amp TRIACs in a TO−218 type package with an isolated tab
designed to be driven directly with IC and MOS devices.

Applications:
D Phase Control D Power Tools
D Static Switching D Solenoid Controls:
D Light Dimming Dishwashers
D Motor Speed Control Washing Machines
D Kitchen Equipment

Absolute Maximum Ratings: (TA = +25C unless otherwise specified)

Peak Repetitive Off−State Voltage (IGT = 50mA), VDRM
NTE56030 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE56031 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On−State Current (TC = +95C, Full Sine Wave), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Non−Repetitive Surge Peak On−State Current (Full Cycle, Initial TJ = +25C), ITSM
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400A
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 420A
I2t Value for Fusing (tp = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000A2s
Critical Rate of Rise of On−State Current (IG = 2 x IGT, tr < 100ns, TJ = +125C), di/dt . . . . 50A/s
Peak Gate Current (tp = 20s, TJ = +125C), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Average Gate Power Dissipation (TJ = +125C), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Isolation Voltage, VISO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2500VRMS
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to +125C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to +150C

Electrical Characteristics: (TJ = +25C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit
Peak Off−State Current IDRM TJ = +25C, VDRM = VRRM − − 5 A
Peak Reverse Current IRRM TJ = +125C, VDRM = VRRM − 5 3 mA
Gate Trigger Current IGT VD = 12V, RL = 30, Note 1
Quadrant I, II, III − − 50 mA
Quadrant IV − − 100 mA

Note 1. Minimum IGT is guaranteed at 5% of IGTmax.

Note 2. For both polarities of A2 referenced to A1.
Rev. 2−15
Electrical Characteristics (Cont’d): (TJ = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Gate Trigger Voltage VGT VD = 12V, RL = 30 − − 1.3 V
Gate Non−Trigger Voltage VGD VD = VDRM, TJ = +125C, RL = 3.3k 0.2 − − V
Holding Current IH IT = 100mA, Note 2 − − 80 mA
Latching Current IL IG = 1.2IGT
Quadrant I, III, IV − − 75 mA
Quadrant II − − 160 mA
Critical Rate of Rise of dv/dt VD = 67%VDRM, Gate Open, TJ = +125C, 500 − − V/s
Off−State Voltage Note 2
Critical Rate of Rise of dv/dt(c) di/dt(c) = 13.3A/ms, TJ = +125C, Note 2 10 − − V/s
Commutation Voltage
Peak On−State Voltage VTM ITM = 35A, tp = 380s, Note 2 − − 1.55 V
Threshold Voltage VTO TJ = +125C, Note 2 − − 0.85 V
Dynamic Resistance rD TJ = +125C, Note 2 − − 10 m

Note 1. Minimum IGT is guaranteed at 5% of IGTmax.

Note 2. For both polarities of A2 referenced to A1.

.626 (15.92) .200

.166 Max
(4.23) (5.08)
Dia Max Max
.050
(1.27)

Isol .147 (3.76)

.815
(20.72)

.490
(12.44)

MT1 MT2 Gate

.500
(12.7)
Min

.215 (5.47) .110 (2.79)