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Semihow KSH13009AL

This document summarizes the specifications and characteristics of the KSH13009AL NPN silicon power transistor. The transistor is suitable for switching regulator and inverter applications with a maximum collector current of 12 amps. Key specifications include a collector-emitter voltage rating of 400V, collector dissipation of 130W, and current gain bandwidth product of 4MHz. Electrical characteristics like saturation voltage, storage time, and turn-on time are also provided.

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87 views5 pages

Semihow KSH13009AL

This document summarizes the specifications and characteristics of the KSH13009AL NPN silicon power transistor. The transistor is suitable for switching regulator and inverter applications with a maximum collector current of 12 amps. Key specifications include a collector-emitter voltage rating of 400V, collector dissipation of 130W, and current gain bandwidth product of 4MHz. Electrical characteristics like saturation voltage, storage time, and turn-on time are also provided.

Uploaded by

douglas campos
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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KSH130

009AL
KSH13009AL

◎ SEMIHOW REV.A1,Oct 2007


KSH130
009AL
KSH13009AL

Switch Mode series NPN silicon Power Transistor


- High voltage, high speed power switching
- Suitable for switching regulator, inverters motor controls

12 Amperes
NPN Silicon Power Transistor
Absolute Maximum Ratings TC=25℃ unless otherwise noted 100 Watts
CHARACTERISTICS SYMBOL RATING UNIT TO-3P
1. Base
2. Collector
Collector-Base Voltage VCBO 700 V 3. Emitter
Collector-Emitter
Collector Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 9 V
Collector Current(DC) IC 12 A
Collector Current(Pulse) ICP 24 A
Base Current IB 6 A
Collector Dissipation(Tc=25℃) PC 130 W
Junction Temperature TJ 150 ℃ 12
3
Storage Temperature TSTG -65~150 ℃

Electrical Characteristics TC=25℃ unless otherwise noted


CHARACTERISTICS SYMBOL Test Condition Min Typ. Max Unit

Collector-Emitter Sustaining Voltage VCEO(sus) IC=10mA, IB=0 400 V

Emitter Cut-off Current IEBO VEB=9V,IC=0 1 ㎃

*DC Current Gain hFE1 VCE=5V,IC=5A 8 40


hFE2 VCE=5V,I
, C=8A 6 30

*Collector-Emitter Saturation Voltage VCE(sat) IC=5A,IB=1A 1 V


IC=8A,IB=1.6A 1.5 V
IC=12A,IB=3A 3 V

*Base-Emitter Saturation Voltage VBE(sat) IC=5A,IB=1A 1.2 V


IC=8A,IB=1.6A 1.6 V

Output Capacitance Cob VCB=10V, f=0.1MHz 180 ㎊

Current Gain Bandwidth Product fT VCE=10V,IC=0.5A 4 ㎒

Turn on Time ton 1.1 ㎲


Vcc=125V, Ic=8A
Storage Time tstg IB1=1.6A, IB2= -1.6A 3 ㎲
RL=15.6Ω
Fall Time tF 0.7 ㎲
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Note. Package Mark information.
R 8 ~ 17 S SemiHow Symbol
S
hFE1 O 15 ~ 28 YWW Z YWW Y; year code, WW; week code
Classification KSH13009AL
26 ~ 39 Z hFE1 Classification
Y
Y1(26~33), Y2(31~39)

◎ SEMIHOW REV.A1,Oct 2007


KSH130
009AL
Typical Characteristics

◎ SEMIHOW REV.A1,Oct 2007


KSH130
009AL
Typical Characteristics ( Continued )

◎ SEMIHOW REV.A1,Oct 2007


KSH130
Package Dimension

009AL
TO-
TO-3P

15.6±0.20 4.8±0.20
13.6±0.20 0
9.6±0.20 ± 0.2 1.5±0.20
.2
φ3
19.9±0.20

18.7±0.20
14.9±0.20
13.9±0.20

1.4±0.20
3±0.20
3.5±0.20

2±0.20
16.5±0.20

1±0.20

5.45typ 0.6±0.20

5.45typ

Dimensions in Millimeters

◎ SEMIHOW REV.A1,Oct 2007

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