VDS

1200 V
IDS 450 A
EAB450M12XM3
Automotive Qualified 1200 V, 450 A All-Silicon Carbide
Conduction-Optimized, Half-Bridge Module
Technical Features
Package 80 x 53 x 19 mm

• High Power Density Footprint

• High Junction Temperature (175 °C) Operation
• Low Inductance (6.7 nH) Design
• Implements Conduction Optimized Third
Generation SiC MOSFET Technology
• Silicon Nitride Insulator and Copper Baseplate

Applications
• Motor & Traction Drives
• Vehicle Fast Chargers
• Automotive Test Equipment

System Benefits

• Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple,
low inductance design.
• Isolated integrated temperature sensing enables high-level temperature protection.
• Dedicated drain Kelvin pin enables direct voltage sensing for gate driver overcurrent protection.

Maximum Parameters (Verified by Design)

Symbol Parameter Min. Typ. Max. Unit Test Conditions Note

VDS max Drain-Source Voltage 1200

VGS max Gate-Source Voltage, Maximum Value -8 +19 Transient < 100 ns
V
Gate-Source Voltage, Recommended Fig. 32
VGS op -4 +15 Static
Operating Value
450 VGS = 15 V, TC = 25 ˚C, TVJ ≤ 175 ˚C Fig. 20
IDS DC Continuous Drain Current
409 VGS = 15 V, TC = 90 ˚C, TVJ ≤ 175 ˚C
ISD DC Source-Drain Current 450 VGS = 15 V, TC = 25 ˚C, TVJ ≤ 175 ˚C
A
ISD BD DC Source-Drain Current (Body Diode) 225 VGS = - 4 V, TC = 25 ˚C, TVJ ≤ 175 ˚C
IDS pulsed Maximum Pulsed Drain-Source Current 900 tp max limited by TVJ op
ISD pulsed Maximum Pulsed Source-Drain Current 900 VGS = 15 V, TC = 25 ˚C
Maximum Virtual Junction
TVJ op Temperature under Switching -40 175 °C
Conditions

Rev. A, 2020-10-07 EAB450M12XM3 4600 Silicon Dr., Durham, NC 27703

Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
1 are registered trademarks of Cree, Inc.
 MOSFET Characteristics (Per Position) (TVJ = 25˚C unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note

VBR DSS Drain-Source Breakdown Voltage 1200 VGS = 0 V, TVJ = -40°C

V
VGS th Gate Threshold Voltage 1.8 2.5 3.6 VDS = VGS, IDS = 132 mA
IDSS Zero Gate Voltage Drain Current 5 500 VGS = 0 V, VDS = 1200 V
μA
IGSS Gate-Source Leakage Current 0.05 1.3 VGS = 15 V, VDS = 0 V

Drain-Source On-State Resistance 2.6 3.7 VGS = 15 V, IDS = 450 A Fig. 2

RDS on mΩ
(MOSFET Only) 4.6 Fig. 3
VGS = 15 V, IDS = 450 A, TVJ = 175 °C
355 VDS = 20 V, IDS = 450 A
gfs Transconductance S Fig. 4
360 VDS = 20 V, IDS = 450 A, TVJ = 175 °C

Turn-On Switching Energy, TJ = 25 °C 11.0

EOn TJ = 125 °C 11.7 VDS = 600 V,
TJ = 175 °C 13.0 IDS = 450 A,
Fig. 11
mJ VGS = -4 V/15 V,
Turn-Off Switching Energy, TJ = 25 °C 10.1 Fig. 13
RG ext = 0.0 Ω,
EOff TJ = 125 °C 11.3 L = 13.6 μH
TJ = 175 °C 12.1

RG int Internal Gate Resistance 2.5 Ω

Ciss Input Capacitance 38.0

nF VGS = 0 V, VDS = 800 V,
Coss Output Capacitance 1.5 Fig. 9
VAC = 25 mV, f = 100 kHz
Crss Reverse Transfer Capacitance 90 pF
QGS Gate to Source Charge 355
VDS = 800 V, VGS = -4 V/15 V
QGD Gate to Drain Charge 500 nC IDS = 450 A
Per IEC 60747-8-4 pg. 21
QG Total Gate Charge 1330

RTH JC FET Thermal Resistance, Junction to Case 0.110 0.145 °C/W Fig. 17

Body Diode Characteristics (Per Position) (TVJ = 25˚C unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
4.7 VGS = -4 V, ISD = 450 A
VSD Body Diode Forward Voltage V Fig. 7
4.2 VGS = -4 V, ISD = 450 A, TJ = 175 °C
tRR Reverse Recovery Time 52 ns
VGS = -4 V, ISD = 450 A, VDS = 600 V
QRR Reverse Recovery Charge 6.6 μC
di/dt = 8 A/ns, TJ = 175 °C
IRR Peak Reverse Recovery Current 195 A

Reverse Recovery Energy TJ = 25 °C 0.2 VDS = 600 V, IDS = 450 A,

ERR TJ = 125 °C 1.1 mJ VGS = -4 V/15 V, RG ext = 0.0 Ω, Fig. 14
TJ = 175 °C 1.9 L = 13.6 μH

Rev. A, 2020-10-07 EAB450M12XM3 4600 Silicon Dr., Durham, NC 27703

Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
2 are registered trademarks of Cree, Inc.
 Temperature Sensor (NTC) Characteristics
Symbol Parameter Min. Typ. Max. Unit Test Conditions
R25 Rated Resistance 4.7 kΩ TNTC = 25 °C
∆R/R Tolerance of R25 ±1 %
P25 Maximum Power Dissipation 50 mW

Steinhart-Hart Modified Coefficients for R/T Computation:

A B C D

TNTC < 25 °C 3.3540E-03 3.0013E-04 5.0852E-06 2.1877E-07

TNTC ≥ 25 °C 3.3540E-03 3.0013E-04 5.0852E-06 2.1877E-07

Module Physical Characteristics

Symbol Parameter Min. Typ. Max. Unit Test Conditions

R3-1 Package Resistance, M1 0.72 TC = 125 °C, Note11 & 2
mΩ
R1-2 Package Resistance, M2 0.63 TC = 125 °C, Note 1 & 2
LStray Stray Inductance 6.7 nH Between Terminals 2 and 3
TC Case Temperature -40 125 °C
W Weight 175 g
2.0 3.0 4.0 Baseplate, M4 bolts
MS Mounting Torque N-m
2.0 4.0 5.0 Power Terminals, M5 bolts
Visol Case Isolation Voltage 4.0 kV AC, 50 Hz, 1 min
CTI Comparative Tracking Index 600
12.5 From 2 to 3, Note22
11.5 From 1 to Baseplate, Note 2
Clearance Distance
5.7 From 2 to 5, Note 2
13.7 From 5 to Baseplate, Note 2
mm
14.7 From 2 to 3, Note 2
14.0 From 1 to Baseplate, Note 2
Creepage Distance
14.7 From 2 to 5, Note 2
14.3 From 5 to Baseplate, Note 2

Note11 Total effective resistance (per switch position) = MOSFET RDS(on) + switch position package resistance
Note22 Numbers reference the connections from the Schematic and Pin Out section of this document

Rev. A, 2020-10-07 EAB450M12XM3 4600 Silicon Dr., Durham, NC 27703

Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
3 are registered trademarks of Cree, Inc.
 Typical Performance
900 2.0
Conditions: Conditions:
800 tp < 300 μs tp < 300 μs 175 °C

Normalized On-Resistance (p.u.)

VGS = 15 V 1.8 VGS = 15 V
Drain-Source Current, IDS (A)

700
150 °C
600 1.6
25 °C
-40 °C
500 125 °C
1.4
400 100 °C
100 °C 1.2
300 125 °C
150 °C -40 °C
200 175 °C
1.0
100 25 °C

0 0.8
0.0 1.0 2.0 3.0 4.0 5.0 0 100 200 300 400 500 600 700 800 900
Drain-Source Voltage, VDS (V) Drain-Source Current, IDS (A)
Figure 1. Output Characteristics for Various Junction Figure 2. Normalized On-State Resistance vs. Drain Current for Various
Temperatures Junction Temperatures
2.0 700
Conditions: Conditions:
1.8 tp < 300 μs tp < 300 μs
Normalized On-Resistance (p.u.)

600
VGS = 15 V VDS = 20 V
Drain-Source Current, IDS (A)
1.6
ID = 450 A
500 175 °C
1.4 150 °C
125 °C
1.2 100 °C
400
1.0
300
0.8
0.6 200
25 °C
0.4 -40 °C
100
0.2
0.0 0
-50 0 50 100 150 200 0.0 2.0 4.0 6.0 8.0 10.0
Virtual Junction Temperature, TVJ (°C) Gate-Source Voltage, VGS (V)
Figure 3. Normalized On-State Resistance vs. Figure 4. Transfer Characteristic for Various Junction
Junction Temperature Temperatures
900 900
Conditions: Conditions:
800 tp < 300 μs 800 tp < 300 μs
VGS = 15 V VGS = 0.0 V
Source-Drain Current, ISD (A)

Source-Drain Current, ISD (A)

700 700
175 °C
150 °C
600 600 125 °C
100 °C
500 500
25 °C
-40 °C
400 400
25 °C
300 300
-40 °C
200 100 °C 200
125 °C
150 °C
100 175 °C 100

0 0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0
Source-Drain Voltage, VSD (V) Source-Drain Voltage, VSD (V)

Figure 5. 3rd Quadrant Characteristic vs. Junction Temperatures at Figure 6. 3rd Quadrant Characteristic vs. Junction Temperatures,
VGS = 15 V VGS = 0 V (Body Diode)
Rev. A, 2020-10-07 EAB450M12XM3 4600 Silicon Dr., Durham, NC 27703
Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
4 are registered trademarks of Cree, Inc.
 Typical Performance
900 100.00
Conditions: Ciss Conditions:
800 tp < 300 μs TJ = 25 °C
VGS = - 4.0 V VAC = 25 mV
Source-Drain Current, ISD (A)

700 f = 100 kHz

10.00
175 °C
600

Capacitance (nF)
150 °C
125 °C Coss
500 100 °C
1.00
400

300
25 °C
200 -40 °C 0.10

100 Crss

0 0.01
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 200 400 600 800 1,000 1,200
Source-Drain Voltage, VSD (V) Drain-Source Voltage, VDS (V)
Figure 7. 3rd Quadrant Characteristic vs. Junction Temperatures, Figure 8. Typical Capacitances vs. Drain to Source Voltage
VGS = - 4 V (Body Diode) (0 - 200 V)
100.00 4.0
Ciss Conditions: Conditions:
TJ = 25 °C 3.5 VGS = VDS
VAC = 25 mV IDS = 132 mA
f = 100 kHz
Threshold Voltage, VGS th (V)

10.00 3.0
Capacitance (nF)

Coss
2.5

1.00 2.0

1.5

0.10 1.0

Crss 0.5

0.01 0.0
0 50 100 150 200 -50 0 50 100 150 200
Drain-Source Voltage, VDS (V) Junction Temperature, TJ (°C)
Figure 9. Typical Capacitances vs. Drain to Source Voltage
Figure 10. Threshold Voltage vs. Junction Temperature
(0 - 1200 V)
60 80
Conditions: Conditions: EOn + EOff
TVJ = 25 °C EOn + EOff 70 TVJ = 25 °C
50
VDS = 600 V VDS = 800 V
RG(ext) = 0.0 Ω 60 RG ext = 0.0 Ω
Switching Energy (mJ)

Switching Energy (mJ)

40 VGS = -4/+15 V VGS = -4/+15 V

L = 13.6 µH 50 L = 13.6 µH

30 40 EOff
EOff
30 EOn
EOn
20
20
10
10
ERR ERR
0 0
0 200 400 600 800 1000 0 200 400 600 800 1000
Drain-Source Current, IDS (A) Drain-Source Current, IDS (A)

Figure 11. Switching Energy vs. Drain Current Figure 12. Switching Energy vs. Drain Current
(VDS = 600 V) (VDS = 800 V)
Rev. A, 2020-10-07 EAB450M12XM3 4600 Silicon Dr., Durham, NC 27703
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5 are registered trademarks of Cree, Inc.
 Typical Performance
30 2.5
Conditions: ERR (VDS = 800 V)
EOn + EOff IDS = 450 A,
25 RG ext = 0.0 Ω,

Reverse Recovery Energy, ERR (mJ)

2.0
VGS = -4/+15 V
Switching Energy (mJ)

L = 13.6 µH
20
1.5
15 ERR (VDS = 600 V)
EOn
EOff 1.0
10
Conditions:
IDS = 450 A, VDS =600 V 0.5
5
RG ext = 0.0 Ω, VGS = -4/+15 V
L = 13.6 µH
0 0.0
0 50 100 150 200 0 50 100 150 200
Junction Temperature, TVJ (°C) Junction Temperature, TVJ (°C)

Figure 13. MOSFET Switching Energy vs. Junction Temperature Figure 14. Reverse Recovery Energy vs. Junction Temperature

90 0.25
Conditions: Conditions:
80 IDS = 450 A, VDS =600 V Reverse Recovery Energy, ERR (mJ) IDS = 450 A, VDS = 600 V
EOn + EOff
TJV = 25 °C, VGS = -4/+15 V 0.20 TVJ = 25 °C, VGS = -4/+15 V
70 L = 13.6 µH L = 13.6 µH
Switching Energy (mJ)

60
0.15
50
EOn
40
EOff 0.10
30

20 0.05
10
ERR
0 0.00
0 2 4 6 8 10 12 0 2 4 6 8 10 12
External Gate Resistor, RG ext (Ω) External Gate Resistor, RG ext (Ω)

Figure 15. MOSFET Switching Energy vs. External Gate Resistance Figure 16. Reserve Recovery Energy vs. External Gate Resistance

1.0E+00
1000.00
Transient Thermal Impedance Junction

Limited by 10 μs
1.0E-01 0.5 RDS(on) 100 μs
Drain-Source Current, IDS (A)

0.3 100.00
to Case, ZTH JC (°C/W)

1 ms
0.1
1.0E-02
0.05 10.00 100 ms
0.02
0.01
1.0E-03
1.00

Conditions:
1.0E-04 TC = 25 °C
0.10
D=0
Single Pulse Parameter: tp
1.0E-05 0.01
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 0.1 1 10 100 1000
Time, tp (s) Drain-Source Voltage, VDS (V)

Figure 17. MOSFET Junction to Case Transient Thermal Impedance,

Figure 18. Forward Bias Safe Operating Area (FBSOA)
ZTH JC (°C/W)
Rev. A, 2020-10-07 EAB450M12XM3 4600 Silicon Dr., Durham, NC 27703
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6 are registered trademarks of Cree, Inc.
 Typical Performance
1000 600
Conditions:

Drain-Source DC Current, IDS (DC) (A)

900 TVJ ≤ 175 °C
500
Drain-Source Current, IDS (A)

800 Wirebond Limit

Chip
700
Module 400
600

500 300

400
Conditions: 200
300 TVJ = 175 °C
200 RG(ext) = 0.0 Ω
LStray-system = 6.0 nH 100
100 LStray-module = 6.7 nH
0 0
0 200 400 600 800 1000 1200 -50 0 50 100 150 200
Drain-Source Voltage, VDS (V) Case Temperature, TC (°C)
Figure 20. Continuous Drain Current Derating vs.
Figure 19. Reverse Bias Safe Operating Area (RBSOA)
Case Temperature
1600 600
Conditions: Conditions:
1400 TVJ ≤ 175 °C VDS = 800 V
FET Power Dissipation, PD (W)

500 TC = 90 °C
1200 TVJ = 175 °C
Output Current, IOut (Arms)

RG ext = 0.0 Ω
400
1000 MF = 1

800 300

600
200
400
100
200

0 0
-50 0 50 100 150 200 0 20 40 60 80
Case Temperature, TC (°C) Switching Frequency, FS (kHz)

Figure 21. Maximum Power Dissipation Derating vs. Figure 22. Typical Output Current Capability vs. Switching Frequency
Case Temperature (Per Position) (Inverter Application)

Rev. A, 2020-10-07 EAB450M12XM3 4600 Silicon Dr., Durham, NC 27703

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7 are registered trademarks of Cree, Inc.
 Typical Timing Characteristics
300 900
Conditions: Conditions: td(off)
TVJ = 25°C 800 TVJ = 25°C
250 VDD = 600 V VDD = 600 V
RG(ext) = 0.0 Ω 700 IS = 450 A
VGS = -4/+15 V VGS = -4/+15 V
200 600
td(off)
Time (ns)

Time (ns)
500
150
400

100 300 td(on)

tr 200
tf
50 tr
td(on) tf
100

0 0
0 200 400 600 800 1000 0 2 4 6 8 10
Source Current, IS (A) External Gate Resistance, RG-EXT (Ω)

Figure 23. Timing vs. Source Current Figure 24. Timing vs. External Gate Resistance

300 30
Conditions: Conditions:
VDD = 600 V TVJ = 25°C
250 IS = 450 A td(off)
25 VDD = 600 V
RG(ext) = 0.0 Ω RG(ext) = 0.0 Ω
di/dt (A/ns) and dv/dt (V/ns)

VGS = -4/+15 V LStray-Bussing = 6.0 nH dv/dtON

200 20
dv/dtOFF
Time (ns)

150 15
di/dtOFF
100 10
di/dtON
tf
50 5
tr
td(on)

0 0
0 50 100 150 200 0 200 400 600 800 1000
Junction Temperature, TVJ (°C) Source Current, IS (A)

Figure 25. Timing vs. Junction Temperature Figure 26. dv/dt and di/dt vs. Source Current

18 30
Conditions: Conditions:
16 TVJ = 25°C IS = 450 A
VDD = 600 V 25 VDD = 600 V
14 IS = 450 A RG(ext) = 0.0 Ω
di/dt (A/ns) and dv/dt (V/ns)

di/dt (A/ns) and dv/dt (V/ns)

LStray-Bussing = 6.0 nH LStray-Bussing = 6.0 nH

12 20
dv/dtOFF
10 dv/dtON
15 dv/dtOFF
8
dv/dtON di/dtOFF
6 10
di/dtOFF
di/dtON
4
di/dtON 5
2

0 0
0 2 4 6 8 10 0 50 100 150 200
External Gate Resistance, RG-EXT (Ω) Junction Temperature, TVJ (°C)

Figure 27. dv/dt and di/dt vs. External Gate Resistance Figure 28. dv/dt and di/dt vs. Junction Temperature

Rev. A, 2020-10-07 EAB450M12XM3 4600 Silicon Dr., Durham, NC 27703

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8 are registered trademarks of Cree, Inc.
 Definitions

Figure 29. Turn-off Transient Definitions Figure 30. Turn-on Transient Definitions

Figure 31. Reverse Recovery Definitions Figure 32. VGS Transient Definitions

Rev. A, 2020-10-07 EAB450M12XM3 4600 Silicon Dr., Durham, NC 27703

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9 are registered trademarks of Cree, Inc.
 Schematic and Pin Out

1 Mid
4 8
2 V-
3 V+
5 9 4 G1
5 K1
2 6 G2
7 K2
6 10
8 V+ (Overcurrent)
7 11 9 V+ (Overcurrent)
10 NTC2
11 NTC1
1

PIN NUMBER DESIGNATION

Package Dimension (mm)

M5x0.8mm HEX NUT x 3 DIMENSION TABLE
MAXIMUM BOLT PENETRATION DEPTH: 5.50mm SYMBOL DIMENSION (mm) TOLERANCE (mm)

4.50 ±0.25 X4 A2 E6 A1 80.00 0.30

A2 53.00 0.30
B2 D5
0.6 A3 3.00 0.30
PART NUMBER
B1 71.75 0.30
SERIAL NUMBER
B2 44.75 0.30
C1 12.00 0.50
C2 24.00 0.50

XXXXXXXXXXXX C3 15.75 0.40

XXXXXXXXXX D1 (5.50) REF.
D2
C2
D1

D2 (31.00) REF.
D3 29.50 0.30
E1
D4

D4 (12.50) TYP REF.

0.6
A1
B1

D5 12.50 0.30
D6 1.50 0.30
E1

D6

E1 (13.50) REF.
C2

E2 44.00 0.30
D2

E3 2.54 0.50
E4 (0.64) REF.
0.6
E5 18.26 0.30
E6 (17.00) REF.

DM CODE
D3
E2
E3
E3
E5
C3
C1

E4
A3

E4

Rev. A, 2020-10-07 EAB450M12XM3 4600 Silicon Dr., Durham, NC 27703

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10 are registered trademarks of Cree, Inc.
 Supporting Links & Tools

• CGD12HBXMP: XM3 Evaluation Gate Driver

• CGD12HB00D: Differential Transceiver Board for CGD12HBXMP
• CRD300DA12E-XM3: 300 kW Inverter Kit for Conduction-Optimized XM3 (CPWR-AN30)
• KIT-CRD-CIL12N-XM3: Dynamic Performance Evaluation Board for the XM3 Module (CPWR-AN31)
• CPWR-AN28: Module Mounting Application Note
• CPWR-AN29: Thermal Interface Material Application Note

Notes

• All parameters are indicative of the product as delivered.

• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human
body nor in applications in which failure of the product could lead to death, personal injury or property damage, including
but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar
emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems.

• The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT-based modules. Therefore, special
precautions are required to realize optimal performance. The interconnection between the gate driver and module housing
needs to be as short as possible. This will afford optimal switching time and avoid the potential for device oscillation. Also, great
care is required to insure minimum inductance between the module and DC link capacitors to avoid excessive VDS overshoot.

• This product is qualified for automotive applications by Wolfspeed standards as documented in the EAB450M12XM3 qualification
report. The product validation test procedure was completed using AQG-324 guidelines as documented.

Rev. A, 2020-10-07 EAB450M12XM3 4600 Silicon Dr., Durham, NC 27703

Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
11 are registered trademarks of Cree, Inc.