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The document discusses different types of switches classified based on their control and conduction/blocking characteristics. It provides details on ideal power diodes, BJTs, MOSFETs, IGBTs, SCRs, GTOs, triacs, series and parallel connections of composite switches.

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ChintuSagar
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0% found this document useful (0 votes)
20 views28 pages

Examdost

The document discusses different types of switches classified based on their control and conduction/blocking characteristics. It provides details on ideal power diodes, BJTs, MOSFETs, IGBTs, SCRs, GTOs, triacs, series and parallel connections of composite switches.

Uploaded by

ChintuSagar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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ST

D O
AM
EX
ST
D O
AM
EX
Classification S T
D
of SwitchesO
A M
E X
T
Based on Control

OS
M D
X A
E
T
Based on Control

OS
M D
X A
E
T
Based on Conduction and Blocking
⊹ Uni polar

O
I

S
M D
X A V

E
T
Based on Conduction and Blocking
⊹ Bipolar

O
I

S
M D
X A V

E
T
Based on Conduction and Blocking
⊹ Uni - Directional
I

O S
M D
X A V

E
T
Based on Conduction and Blocking
⊹ Bi - Directional

O
I

S
M D
X A V

E
Q1

The figure shows the voltage across a power semiconductor device and
the current through the device during a switching transition. Is the

S T
O
transition a turn ON transition or a turn OFF transition? What is the energy
lost during the transition?

M D
X A
E
Q2

The ig - Vg characteristics of a thyristor is a straight line passing through


origin with a gradient of 2.5 x 10³. If P = 0.015 watt, the value of gate

S T
O
voltage will be nearly

D
(a) 5.0 V

(c) 7.5 V

(b) 6.1 V

(d) 8.5 V

A M
E X
Characteristics
of Ideal S T
Switches
DO
A M
E X
T
Power Diode

O S
M D
X A V

E
T
BJT

O S
M D
X A V

E
T
Power Mosfet

O S
M D
X A V

E
T
IGBT

O S
M D
X A V

E
T
SCR

O S
M D
X A V

E
T
GTO

O S
M D
X A V

E
T
Triac

O S
M D
X A V

E
Composite S T
Switches
DO
A M
E X
T
Series Connection

O S
I

M DI I

X A
E
V V V

MOSFET Diode Composite


T
Parallel Connection

O S
I

M DI I

X A
E
V V V

BJT Diode [Reversed] Composite


Q3

Bidirectional semiconductor device is

S T
O
a. Diode
b. BJT

D
c. SCR
d. TRIAC

A M
E X
Q4

An ideal diode is

S T
a. Unidirectional
b. Bidirectional
c. Fixed voltage polarity
d. Only (a) and (c)

DO
A M
E X
Q5

S T
Figure shows four electronic switches (i),(ii),(iii) and (iv). Which of the switches can
block voltages of either polarity (applied between terminals ‘a′ and ‘b′) when the active

O
device is in the OFF state?

M D
X A
E
Q6

S
Four power semiconductor devices are shown in the figure along with their relevant terminals.
The device(s) that can carry dc current continuously in the direction shown when gated
T
O
appropriately is (are)

M D
X A
E
Q7

S
An electronic switch S is required to block voltages of either polarity during
T
its OFF state as shown in figure (a). This switch is required to conduct in only

O
one direction during its ON state as shown in the figure (b).

D
A M
E X
ST
D O
AM
EX

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