21PYB102J –Semiconductor Physics and
Computational Methods
Unit- I : Session 7 : SLO 1
1
E-K Diagram
⮚ The conventional band diagram shows the band gap energy only.
⮚ To know more electrical and optical properties of semiconductor material
we need to know E-K diagram.
⮚ An E-K diagram shows characteristics of particular semiconductor
material.
⮚ It shows the relationship between energy and momentum of available
states for electron in the crystal.
⮚ K being the momentum and E as the energy from a mathematical point of
view K is the wave vector.
⮚ The E-K diagram of semiconductor is obtained by solving the
Schrodinger’s equation.
Bloch Theorem
▪ Most of the semiconductors are in crystalline form, i.e the atoms are
arranged in periodic manner .
▪ The motion of electron in a crystal is governed by the laws of quantum
mechanics .
▪ If we have one electron and one proton system like hydrogen atom it is
easy to solve Schrodinger equation .
▪ But in solid there are large number of atoms and electrons present, so its
very difficult to solve the Schrodinger equation .
▪ If we consider a one dimensional periodic lattice and the potential energy
(PE) of a moving electron depends on its position inside the lattice, but
the PE is said to be periodic in nature by F . Bloch, and the probability of
finding a electron is also periodic, the wave -function associated with
electron is also periodic in nature .
▪ Since the probability of finding electron is equal to |Ψ| 2
Schrödinger’s one-Dimensional time independent wave equation
Bloch postulated that the potential (V) inside the crystal is periodic,
so V can be written as V(x) for one dimensional lattice.
Again the periodic potential V(x) can be written as by means of
lattice constant V(x+a)
i.e V(x) = V (x+a)--------(2)
Bloch also postulated that the wave function of an electron moving in
a periodic lattice is periodic and which is given as
𝜓𝑘(𝑥) = 𝑒𝑖𝑘𝑥 𝑢𝑘(𝑥)---------(3), where 𝑢𝑘(𝑥) = 𝑢𝑘(𝑥 + 𝑎) (periodicity of
crystal)
If we substitute the eqs 2 & 3 in eq 1 one can get the solution for the
Schrödinger’s time independent equation by Numerical and analytical
methods
From the above equation if we plot energy Eigen values vs wave
vector K will give the E-K diagram So the energy Eigen values are
periodic in k space
21PYB102J Module-I - Lecture-5
Periodic zone Extended Zone
Reduced zone scheme :
⮚ In this scheme the first Brillouin zone is shown since the E-K diagram is
periodic, it is sufficient to restrict to first zone in the reduced scheme.
⮚ If we know the energy values of first zone with respect to K then we know
every where because energy Eigen values are periodic .
⮚ In many of optoelectronic text books the reduce zone scheme is shown.
What are the significance of E-K diagram
⮚ No theoretical study, experimentation and technological
application can take place without E-K diagram.
⮚ This diagram indicates the band gap Eg which is the difference in
energy between top of the valance band and bottom of the
conduction band.
⮚ This diagram demonstrate electron (hole) mobility.
⮚ This diagram explains electron (hole) effective mass.
⮚ This diagram indicate how the electron states are equally spaced in
K-space.
⮚ This diagram clearly shows direct vs indirect band gap.
We know
P=ℏk
Indirect BG Direct BG
A direct recombination occurs with the release of energy equals to energy
difference between two levels such as Eg .The probability of radiative
recombination is high and hence direct bandgap semiconductors are used in
optical sources
Due to relative difference in momentum , first the momentum is conserved by
release of energy only after both the Momentum align themselves. The
probability of radiative recombination is comparatively low.
Direct and Indirect band gap semiconductors
▪ We know the relation between energy and wave number for an one
dimensional lattice. In real crystals the E – k relationship is much more
complicated.
▪ In crystals the interatomic distances and internal potential energy
distribution vary with direction of the crystal.
▪ Hence the E – K relationship and energy band formation depends on the
orientation of the electron wave vector to the crystallographic axes.
▪ In few crystals like GaAs, the maximum of the valence band occurs at the
same value of K as the minimum of the conduction band.
▪ This is called direct band gap semiconductor.
▪ In few semiconductors like Si the maximum of the valence band does not
always occur at the same K values the maximum of the conduction band.
This we call indirect band gap semiconductor.
▪ In direct band gap semiconductors the direction of motion of an electron
during a transition across the energy gap, remains unchanged.
▪ Hence the efficiency of transition of charge carriers across the band gap is
more in direct band gap than in indirect band gap semiconductors.
Direct Band-gap Semiconductor Indirect Band-gap Semiconductor
1. A direct band-gap (DBG) 1. A indirect band-gap (DBG)
semiconductor is one in which semiconductor is one in which
the maximum energy level of the the maximum energy level of the
valence band aligns with the valence band are misaligned
minimum energy level of the with the minimum energy level
conduction band with respect to of the conduction band with
momentum. respect to momentum.
2. In a DBG semiconductor, a 2. Due to a relative difference in
direct recombination takes place the momentum, first, momenta
with the release of the energy align themselves, a
equal to the energy difference recombination occurs
between the recombining accompanied with the release of
particles. energy.
3. The efficiency factor of a DBG 3. The efficiency factor of a IBC
semiconductor is higher. semiconductor is lower.
4. Example of DBG semiconductor 4. Examples of IBG
materialis Gallium Arsenide semiconductors are Silicon and
(GaAs). Germanium.
5. DBG semiconductors are always 5. The IBG semiconductors cannot
preferred over IBG for making be used to manufacture optical
optical sources. sources.
6. The probability of a radiative 6. The probability of a radiative
recombination is high. recombination is comparatively
low.
