RB501V-40

Diodes

Shottky barrier diode

RB501V-40

zApplication zExternal dimensions (Unit : mm) zLead size figure (Unit : mm)
Low current rectification 1.25±0.1 0.1±0.1
0.05
0.9MIN.

0.8MIN.
zFeatures
1) Ultra Small mold type. (UMD2)

2.1
2) Low IR

1.7±0.1

2.5±0.2
3) High reliability.

UMD2

zCondtruction zStructure
0.7±0.2
Silicon epitaxial planer 0.3±0.05 0.1

ROHM : UMD2
JEDEC : S0D-323
JEITA : SC-90/A
dot (year week factory)

zTaping dimensions (Unit : mm)

φ1.55±0.05 0.3±0.1
4.0±0.1 2.0±0.05
1.75±0.1
3.5±0.05

8.0±0.2

2.8±0.1
2.75

1.40±0.1 4.0±0.1 φ1.05

1.0±0.1

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit
Reverse voltage (repetitive peak) VRM 45 V
Reverse voltage (DC) VR 40 V
Average rectified forward current Io 100 mA
Forward current surge peak (60Hz・1cyc) IFSM 1 A
Junction temperature Tj 125 ℃
Storage temperature Tstg -40 to +125 ℃

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
VF1 - - 0.55 V IF=100mA
Forward voltage
VF2 - - 0.34 V IF=10mA
Reverse current IR - - 30 µA VR=10V
Capacitance between terminals Ct - 6.0 - pF VR=10V , f=1MHz

Rev.B 1/3
 RB501V-40
Diodes

zElectrical characteristic curves (Ta=25°C)

100 10000 100
Ta=125℃
Ta=125℃
f=1MHz
1000
FORWARD CURRENT:IF(mA)

REVERSE CURRENT:IR(uA)

CAPACITANCE BETWEEN
10 Ta=75℃ Ta=75℃

TERMINALS:Ct(pF)
100

1 Ta=25℃
10 Ta=25℃ 10

Ta=-25℃
1
0.1 Ta=-25℃
0.1

0.01 0.01 1
0 100 200 300 400 500 600 0 5 10 15 20 25 30 35 0 10 20 30
FORWARD VOLTAGE：VF(mV) REVERSE VOLTAGE：VR(V) REVERSE VOLTAGE:VR(V)
VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS

470 310 30
Ta=25℃
IF=100mA Ta=25℃ Ta=25℃
FORWARD VOLTAGE:VF(mV)

IF=10mA 25 VR=10V
FORWARD VOLTAGE:VF(mV)

460 n=30pcs

REVERSE CURRENT:IR(uA)
300
n=30pcs n=10pcs
20
450 290
15
440 280
10

430 270 AVE:2.548uA

5
AVE:281.5mV
AVE:439.5mV
420 260 0

VF DISPERSION MAP VF DISPERSION MAP IR DISPERSION MAP

20 20 30
18 Ta=25℃
RESERVE RECOVERY TIME:trr(ns)

Ta=25℃
FORWARD CURRENT:IFSM(A)

f=1MHz Ifsm 1cyc 25 IF=0.5A

16
CAPACITANCE BETWEEN

IR=10V 15 IR=1A
TERMINALS:Ct(pF)

14 n=10pcs Irr=0.25*IR
8.3ms 20
PEAK SURGE

n=10pcs
12
10 10 15
8
10
6
5
4
5
2 AVE:5.81pF AVE:5.50A
AVE:6.20ns
0 0 0

Ct DISPERSION MAP IFSM DISRESION MAP trr DISPERSION MAP

15 15 1000
Rth(j-a)
Ifsm Ifsm
THAERMAL IMPEDANCE:Rth (℃/W)

t
FORWARD CURRENT:IFSM(A)

FORWARD CURRENT:IFSM(A)

8.3ms 8.3ms
10 10 100
1cyc Rth(j-c)
PEAK SURGE

PEAK SURGE

TRANSIENT

Mounted on epoxy board

IM=10mA IF=100mA
5 5 10

1ms time
300us
0 0 1
0.1 1 10 100 0.1 1 10 100 0.001 0.1 10 1000

NUMBER OF CYCLES TIME:t(ms) TIME:t(s)

IFSM-CYCLE CHARACTERISTICS IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS

Rev.B 2/3
 RB501V-40
Diodes

0.1 0.07 0.3

0A Io
0.06 0.25
0.08

FORWARD CURRENT:Io(A)
0V VR

AVERAGE RECTIFIED
t

DISSIPATION:PR (W)
DISSIPATION:Pf(W)
FORWARD POWER

0.05

REVERSE POWER
D=1/2 D=t/T
0.2 VR=20V
0.06 DC
DC 0.04 T Tj=125℃
Sin(θ＝180) 0.15
Sin(θ＝180) 0.03 D=1/2
0.04 D=1/2
DC 0.1
0.02
0.02 Sin(θ＝180)
0.01 0.05

0 0 0
0 0.1 0.2 0 10 20 30 0 25 50 75 100 125
AVERAGE RECTIFIED REVERSE VOLTAGE:VR(V) AMBIENT TEMPERATURE:Ta(℃)
FORWARD CURRENT：Io(A) VR-PR CHARACTERISTICS Derating Curveﾞ(Io-Ta)
Io-Pf CHARACTERISTICS

0.3
0A Io
0.25
0V VR
FORWARD CURRENT:Io(A)

t
AVERAGE RECTIFIED

D=t/T
0.2 VR=20V
DC T Tj=125℃
0.15
D=1/2

0.1

0.05 Sin(θ＝180)

0
0 25 50 75 100 125
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)

Rev.B 3/3
Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1