q ne

Kirchoff's laws
Resistance depending on temperature
• Resistivity of conductor increase with increase in tempreature.
Electric Current •
Current, I = =
t t
In case of electron revolving in a circle of radius r with speed V, 1st law/
Junction law
2nd law/loop
rule
• Resistivity of semiconductor decreases with increases in temperature • Period of revolution, T = 2πr
V • Algebraic sum of Algebraic sum in
S.I. Unit Ampere Rate of flow • Frequency of revolution, f = V
all the current
meeting at
potential around
(A) Coulomb Second 2πr
any closed loop
junction is zero. is zero
i.e., εI = 0
• Current at any point of orbit is I = e = eV
T 2πr
Instaneous, i = dθ Average, i = ∆θ
• Resistance, (R) Ohm's Law dt ∆t
Current density, (J) Meter bridge Balanced Condition
By convection, direction of flow of positive
Current per unit cross-section Based on wheat of wheat stone
charge is taken as direction of flow of current. bridge
• If physical condition remain same current Drift velocity (Vd) area perpendicular to current stone bridge P R
I α V =» V = IR flow. I E P R  R =
J= = = = =
Q S 100 −  S
Q S
• R-electric resistance substances which Drift velocity (Vd) A1 ρ
ρ
R= Obey Ohm's law called Ohmic and that do
A
• Unit of Resistance Ohm (Ω) not obey called non-ohmic substances. Potential gradient (x) Sensitivity of
• Ohm's law is not valid for semi-conductor Potentiometer Potential difference per potentiometer
• Dependency of R on temperature (T)
• For Ohmic substances tan θ = V = R ne AτE 2
V Used to E  unit length of wire • A potentiometer is
i = neAVd = = neAlleE = neAµ e (i) compare emfs 1
= 1
R2 = R1(1 + ∝ (T2 – T1)) I m  E2 2 x = V = Volt more sensitive, if it
E L m measures a small
∝ = Temperature coefficient of resistance Average uniform velocity acquired by (ii) final internal resistance of cell r =  − 1 S
V   e  R potential difference
free electron, where, V = iR =  × more accurately.
• Symbol  (R + Rn + r)  L
i J V eE
Vd = = = or τ
neA ne ρne m
Resistance colour code
• Rheostate is variable resistance Vd = µeE (τ is avg. time between collisions)
Vd
mobility, µe = (ρ is resistivity unit is Ω.m)
E
Resistance colour code In terms of relaxation time τ1
R = 1st digit – 2nd digit × 3rd digit + 4th digit%
ml m
R= 2
and ρ= When cell is discharging
Conductivity (σ) ne τA ne2 τ
1 1 1 1 When cell is discharging current inside the cell is
Conductance, C = = n, τ, and ρ are properties of material.
Resistance R
σ= =
Resistivity ρ from cathode to anode current I = E
Unit is mho (Ω )
–1
r +R
Unit = 1 = 1 or mho Electric Energy and Power or E = IR + Ir = V + Ir or V = E – Ir
Ωm ohm ⋅ m m

Grouping of Resistance Principle of bulb When cell charging

Parallel grouping of resistance •
2
Resistance of bulb, R = V or R ∝ 1 (V and P is rated value on bulb)
Series grouping of resnstance P P When cell is charging current inside the cell is
• Equivalent resistance,
• Equivalent resistance, RS = R1 + R2 + R3 ..... from anode to cathode.
1 1 1 1 • In parallel, P = P1 + P2
= + + + ....
Rp R1 R2 R3
1 1 1 Current, I = V − E or V = E + Ir
• In Series, = +
• Current flow through each resistance is same. P P1 P2 r
• Potential difference, V ∝ R • In parallel a bulb having more rated power glows more brightly.
When cell is open circuit
• In series a bulb having less rated power glows more brightly. R=∞
• Potential difference across
Some Important Formula E
each resistance same
• Heat energy developed across a resistor I= = 0 and V = E
• After stretching, it length R+r
current distribution,
1 in each H = I2Rt; t = time
increases by n times then I∝
resistance, R
resistance will increase by n2
• Power, P = I2R = V
2 When cell is short circuited
times i.e., R
1
Electric Cell : R = 0 and I = −E and V = IR = 0
If radius be reduced to n �mes then area of P2Rc R+r
1 Source of energy that maintains • For transmission cable, power loss, ρc = I2Rc = , P = const.
Vc2
cross-sec�on decreases n2 �me so the continuous flow of charge in a
• resistance become n4 times i.e., R2 = n4R1 circuit. Power transferred to load by cell
w E2R
Using n conductors of equal resistance, the number EMF of cell, ε =
q
Grouping of cells P = I2R = and P = Pmax
of possible combina�on is 2n–1. (r + R)2

If the resistance of n conductors are totally Cell in series, Cell in parallel if dP and P = Pmax if r = R
different, then the numbers of possible dR
Cells in series and parallel
• combination will be 2n. nε nε ε
i.e., mixed current in the circuit, I = Current in the circuits, I = Current in the circuit, I = 2 2
nr
+R R + nr R+
r Pmax = E = E
m m 4r 4R