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Electronics Coaching Notes - 01

This document lists and briefly defines over 170 electronics and electrical engineering terms. Some key terms include: solar cell, bundled conductor, corona, local hot spots in SCRs, IEEE-488 digital interface, RAM, ROM, cache memory, PMOS transistor speed, kWh meter, transmission line limits, varactor diode capacitance, temperature effects on materials, Schottky diode switching, triode amplifier, early integrated circuit designers, robot types, semiconductor manufacturing processes, flip flop types, transistor characteristics, oscillator types, memory types, battery components and effects, and electrical measurement units.
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0% found this document useful (0 votes)
44 views3 pages

Electronics Coaching Notes - 01

This document lists and briefly defines over 170 electronics and electrical engineering terms. Some key terms include: solar cell, bundled conductor, corona, local hot spots in SCRs, IEEE-488 digital interface, RAM, ROM, cache memory, PMOS transistor speed, kWh meter, transmission line limits, varactor diode capacitance, temperature effects on materials, Schottky diode switching, triode amplifier, early integrated circuit designers, robot types, semiconductor manufacturing processes, flip flop types, transistor characteristics, oscillator types, memory types, battery components and effects, and electrical measurement units.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOC, PDF, TXT or read online on Scribd
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Electronics 33.

solar cell – photovoltaic cell


1. Swinburne’s method – most economical and 34. bundled conductor – reduces power loss due to
convenient method of testing corona
2. 0.5 Ω - typical value of armature resistance 35. corona – common in Tx lines; not affected by
3. 50 Ω - typical op-amp input impedance / typical atmospheric temp.
surge cable resistance 36. local hot spots – di/dt in SCR
4. 600 V – solid grounding 37. false triggering – dv/dt in SCR
5. 3.3 kV – 11 kV – resistance grounding 38. IEEE-488 digital interface - is a short-range,
6. 5 to 10 years – shelf life of lithium cells digital communications bus specification.
7. 3 to 8 inches – size of silicon before processing 39. RAM – combinational logic circuits
8. -40 dB – roll-off (low pass filters) 40. ROM – array
9. Ramsauer’s effect – absorption of slow moving 41. cache memory – recently accessed data
electrons by interfering matter 42. PMOS – 6 times slower than NMOS
10. Bravais’ lattice – shows the location of lattice 43. kWh meter – recording instrument
points 44. 1 kWh = 860 kcal
11. Frenkel defect – an atom or ion leaves its place in 45. Tx limit – can be solved by inserting a series
the lattice and becomes an interstitial capacitance and shunt reactors
12. Vacancy defect – an atom is missing from one of 46. varactor – as RB increases, capacitance
the sites decreases
13. single phase motors – does not self start 47. temp increase = length increase, stress
14. Anderson bridge circuit – used to identify decrease
unknown inductances 48. Schottky diode – fast switching
15. Maxwell – Wien bridge circuit – modified 49. triode – simplest amplifier diode
version of Anderson bridge circuit 50. Nimak gantry – positional precision robot
16. Schering bridge circuit – used to identify 51. Karel Capek – coined the word ‘robot’
unknown capacitance 52. J.S. Kilby – made the first I.C.
17. Wheatstone bridge – used to determine unknown 53. Ted Hoff – designed the microprocessor in
resistances ranging from 1Ω to few M Ω 1969.
18. Miller circuit – step input to ramp output 54. anthropometric robot – most maneuverable
19. Phanastron circuit – modified version of Miller robot
20. Zinc and copper – used as good electrodes 55. SCARA – used in assembly operation
21. Zinc container – cathode part in the dry cell 56. revolute – rotational movement
22. Silver zinc cell – used for emergency 57. prismatic – straight movement
23. Weston saturated cell – used in large laboratories 58. walk through – programming the linear
24. carbon – cannot be used as a magnet movement of robot
25. glass – strongest dielectric 59. 0.5µm - thickness of the depletion layer of an
26. double transient energy – refers to RLC circuits unbiased P-N junction
27. transient – dependent on the instant that the 60. 10,000 – no. of times a card reader can read
circuit is closed. 61. 1,000,000 – actual gain of an op-amp
28. punch through effect – when RB voltage is 62. 4 & 100 – inductance of a voice coil / speaker
exceeded and avalanche breakdown occurs. impedance
29. lead acid cell – 2.1 V 63. LASCR – used as latch, no gate terminal
30. antimony lead alloy – sediments found in a lead 64. binary counter – use a D- flip flop
acid cell 65. D-flip flop – composed of JK, inverter and RS
31. transformer coupled load – improves Class A flip flop
efficiency by 50% 66. NAND – S=0, C=0
32. 95% - amount of current which flows through the 67. NOR – S=1, C=1
collector
68. monolithic IC – passive and active components 98. class C amp – most distorted output
undergo one process; used in computers because 99. EAROM – degraded every read operation
they are more compact 100. ultraviolet light – can erase the contents of an
69. film IC – depositing required patterns of passive EPROM
components 101. flip flop – belongs to the family of bistable
70. thin film – spattering / ceramic substrate multivibrator
71. thick film – silk screening / alumina substrate 102. SC flip flop – used as latch
72. index register – used for address modification 103. toggle condition – distinction of JK flip flop
73. Hartley – tap coil over SC flip flop
74. Colpitts – tap capacitor 104. speed of operation – reason why avalanche
75. Ip/IV- ratio in tunnel diode important in computer diode is preferred over PIN diode in optical
applications systems
76. transputer – computer on a chip; operates on 105. CMRR – for a differential amp is infinity
parallel processing; 32 bits 106. source – point of reference in JFET
77. nonvolatile memory – semiconductor rom 107. thermal neutrons – slow neutrons
78. semiconductor rom – combinational logic circuit 108. bimetallic strip – the thermostat used in irons
79. SCS – anode, cathode and 2 gates 109. frequency stability – improved by using a
80. diac – pair of four layer SCR tuned circuit
81. triac – behaves like 2 SCR 110. gain stability – improved by controlling the
82. SCR – 2 N-type and 2 P-type gain
83. UJT – behaves like diode and 2 resistors 111. FET – similar to thermionic valves
84. induction instrument –rotation instrument 112. deflection sensitivity of CRT – dependent on
85. JFET – depletion mode only; square law device the separation of Y plates
(transconductance curve is parabolic) 113. carbon – has a negative temp coefficient
86. PIN – negative resistance diode / thin slice of 114. indium – cannot be used in doping when
semiconductor sandwiched between two metal convertin an intrinsic to N-type extrinsic
conductors 115. Fermi level – forbidden gap
87. IMPATT – microwave device used as oscillator 116. microprocessor – basic units are ALU and
for 10-1000 GHz frequencies control unit
88. bolometer – used to measure temperature 117. all solids have 6 degrees of freedom
variations with ref to the changing metallic 118. daisy chaining
resistance 119. photodarlington – phototransistor and
89. stroboscope – measures speed while flashing at a transistor
preset frequency 120. sulphation – occurs due to incomplete
90. ondograph – waveshaping of voltage / current charging of lead acid cell
91. light meter – uses lux as unit 121. digital IC – discrete change
92. permeameter – measures magnetic characteristics 122. analog IC – linear change
of ferromagnetic substances 123. schottky diode – no depletion layers and
93. luminous intensity – unit used is candela operate with hot carriers
1/2
94. 0999 – maximum number display for a 3 digital 124. 64 bit word size – used on largest computers
meter 125. nickel – has high internal resistance
95. 1000 V – max voltage measured for a resolution 126. lead acid – dilute sulphuric acid, sponge rod,
1/2
of 100mV 3 digital meter lead peroxide
96. darlington pair – gain is obtained by multiplying
127. always
the beta values of the transistors; same as voltage
gain with an emitter follower 128. trickle charge – fresh and fully charged
97. class B amp – not prone to even order harmonic 129. no water is absorbed
distortion 130. electronic oscillator – always with feedback
131. Boltzmann’s diode constant – static V/I 166. negative swing – Q point at saturation
characteristics 167. positive swing – Q point at cut – off
132. low frequency cut off – bypass and coupling 168. bias – apply dc voltage at pn junction
capacitor 169. mica – not good conductor
133. transistor – interjunction capacitance – parasitic 170. LCD – has less power requirement compared
oscillations to LED array
134. notch relays – impulse repeating 171. cascade amp – better BW
135. ECL – very low propagation delay , fastest
136. I2L – bipolar saturated logic
137. CMOS – very compact ; power consumption (in
nW range)
138. logic analyzer – depends on the maximum input
channel
139. push-pull – eliminate even –order harmonics
140. use of DC motor / stepper motor – compared to
an ac motor can withstand overload
141. Barkhausen criterion - βA≥1 – sustain oscillation
142. phase – 0 degree
143. positive feedback – regenerative
144. monostable – introduced delay propagation
145. astable – used as oscillator
146. bistable – used as flip flop
147. soft stops – servo rotational
148. advantage of non-servo – high repeatability, low
cost
149. direct coupling – less distorted to any frequency
response
150. RC coupling – low cost and no adjustment
151. transformer coupling – minimum loading and
minimum mismatch
152. saturation – clipping at negative portion
153. cut –off – clipping at positive portion
154. subroutine – high cannot be used as programming
test
155. DE MOSFET – no pn junction
156. speed – links torque and power
157. decade counter – 0-9 counter, next rest
158. 4096- 4096 x 1-bit RAM
159. SiO2 –isolation in ICs
160. MKS unit for electric field intensity – volt per
meter
161. excess-3 – add 3 in BCD
162. handshaking – overcome problems in
asynchronous transmission
163. relaxation oscillator – interdependent circuit
164. ripple factor – determines the filter efficiency of
the P.S.
165. fixed bias – less stable

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