THE UNIVERSITY OF ZAMBIA
SCHOOL OF ENGINEERING
DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING
NAME: MOSES MUSHEHENU
COMPUTER ID: 2020558485
COURSE CODE: EEE 3019
LAB NUMBER: ONE– TRANSISTOR AMPLIFIERS
ATTENTION: MR. GEORGE ZIBA
DUE DATE: 6TH OCTOBER, 2023
INTRODUCTION
A transistor is a semiconductor device used to amplify or switch electrical signals
and power. It is one of the basic building blocks of modern electronics. It is composed
of semiconductor material, usually with at least three terminals for connection to an
electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls
the current through another pair of terminals. Because the controlled (output) power can be
higher than the controlling (input) power, a transistor can amplify a signal. Some transistors
are packaged individually, but many more in miniature form are found embedded
in integrated circuits. Because transistors are the key active components in practically all
modern electronics, many people consider them one of the 20th century's greatest inventions
The analysis or design of a transistor amplifier requires knowledge of both the dc and ac
response of the system. In transistor networks, any increase in ac voltage, current, or power is
the result of a transfer of energy from the applied dc supplies. In design or synthesis, once the
desired dc current and voltage levels have been defined, a network must be constructed that
will establish the desired operating point. For transistor amplifiers the applied biasing dc
voltages establish a fixed level of current and voltage on the characteristics for small-signal
amplification. The fixed point established is called the quiescent point (Q-point)
AIM
- To understand the operation of a single stage transistor amplifier.
- To use transistor DC- and AC- models to calculate respectively biasing and the small
signal behavior.
- To observe and explain the effects of large input signals.
EQUIPMENT
- Feedback trainer IET 459
- FEEDBACK component box IET 463
- UNILAB signal generator
- PHILIPS digital multimeter PM 2519
- Dual channel oscilloscope
- Miscellaneous connection hardware
- 2 x 10 µF from IET 464
THEORY
A transistor has to be properly biased in order to amplify a signal. It was found that all
currents
and voltages consist of a DC (bias) and an AC (signal) component. In other words, the signal
is
an ‘excursion’ out of the bias value. It is common to indicate the signal component by a
lowercase character (e.g vc and ib), so the total voltage and current is the summation of the
DC and
the AC components.
𝑉𝑐 = 𝑉𝑐−𝑏𝑖𝑎𝑠 + 𝑣𝑐
𝐼𝑏 = 𝐼𝑏−𝑏𝑖𝑎𝑠 + 𝑖𝑏
To calculate the transistor behavior, we use two models:
a) DC model, to calculate the bias conditions (no signal).
This model involves the current DC gain factor hHF.
3
b) AC model, to analyze the relations between the signal voltages and currents at different
places in the circuit. Parameters used here are hie and hfe.
DC-MODEL
a) The base emitter function behaves like a diode and is usually forward biased (figure 2)
with VBE = 0.65V.
b) The collector current is determined by the base current only, provided that the collector-
emitter voltage is large enough.
These observations lead to the following model for the transistor
The collector – emitter current is determined by base current with relating parameter hFE
AC-MODEL
From further experiments, it has been seen that the diode in figure 3 can be replaced by a,
resistor hie,
𝑉𝑏𝑒 𝑉𝑜
ℎ𝑖𝑒 = = 𝐼𝑏−𝑏𝑖𝑎𝑠
𝐼𝑏
where Vo is a parameter depending on temperature (25mV at room temperature).
We define the small signal current gain as:
𝑖𝑐
ℎ𝑓𝑒 =𝑖𝑏
It is also useful to introduce another parameter S (slope), defined as:
ℎ𝑓𝑒 𝐼𝑐−𝑏𝑖𝑎𝑠
𝑆 = ℎ𝑖𝑒 = 𝑉𝑜
= 40 × 𝐼𝑐−𝑏𝑖𝑎
Finally, we may summarize our small signal model below:
For dc analysis the input side is further redrawn
The open-circuit Thevenin voltage ETh is determined with voltage source Vcc returned to the
network, see fig. 8. Applying voltage divider rule yields:
𝑅2𝑉𝐶𝐶
𝐸Th = 𝑉𝑅2 = 𝑅1 + 𝑅2
𝐸Th − 𝐼𝐵𝑅𝑇ℎ − 𝑉𝐵𝐸 − 𝐼𝐸𝑅𝐸 = 0;
Substituting 𝐼𝐸 = (β + 1)𝐼𝐵, yields:
𝐸𝑇ℎ − 𝑉𝐵𝐸
𝐼𝐵 = 𝑅𝑇ℎ + (𝛽 + 1)𝑅𝐸
Once IB is known, the remaining quantities of the network can be found in the same manner
as
for the emitter-bias configuration. That is,
𝑉𝐶𝐸 = 𝑉𝐶𝐶 − 𝐼𝐶(𝑅𝐶 + 𝑅𝐸)
For ac analysis our circuit becomes
We see that if Vs is an ideal voltage source, with internal resistance zero, R1 and R2 have no
influence on the input signal. Therefore vb = vs.
1
𝑣𝑒 = (𝑖𝑏 + 𝑖𝑐)𝑅𝑒 = 𝑖𝑐 × 𝑅𝑒 (1 +ℎ𝑓𝑒)
1 1 1
𝑣𝑏 = 𝑣𝑒 + 𝑣𝑏𝑒 = 𝑣𝑒 + 𝑖𝑐 × 𝑆= 𝑖𝑐(𝑅𝑒(1 + ℎ𝑓𝑒) + 𝑠 )
The total voltage gain Av is defined as the ratio of output signal voltage and the input signal
voltage.
We find:
𝑣𝑐
𝐴𝑣 = 𝑣𝑏
PROCEDURE
As stated in the lab manual
Data Collection/Analysis
1.1 DC ANALYSIS
VC 1.6V
VE 0.52V
VB 0.28V
VCC 12V
• VC= 1.6 DIV X 1.0V/DIV
VC = 1.6V
• VE =2.6 DIV X 0.2V/DIV
VB = 0.28V
1.2 AC ANALYSIS
Vin = 5Vp-p
Vout=10VP-P
To determine Av
AV = -Vout/Vin
AV=-10/5
AV= -2
DISCUSSION
The lab was carried out, it involved the use of dual channel oscilloscope which is very
difficult to read and connect because we are familiar with the digital oscilloscope
Transistor should be properly connected in the circuit to ensure common emitter voltage-
divider bias configuration during the lab. Not properly connecting the transistor might lead to
wrong readings on the oscilloscope.
The use of a dual channel oscilloscope means that when taking readings, the right channel
should be set when taking readings on the circuit. The oscilloscope should have the
appropriate
time base and voltage settings to display signals clearly on the screen. The other is to
remember to switch between AC/DC depend on what you are dealing with.
CONCLUSION
The lab experiment was not successful, we were unable to achieve our aims, due to the way
the lab was carried out.
Better equipment in the lab is highly recommended. Better equipment makes the lab much
easier and understandable. Measuring of quantities is very difficult with bad quality of
equipment making the lab difficult to do.
REFERENCES
1. EEE 3019 LAB MANUAL
2. EEE 3019 LECTURE NOTES
QUESTIONS FOR PREPARATION
PQ1.
VTH = IBRTh + VBE + IERE
𝑉𝑇𝐻 = × 15𝑉
VTH = 2.63158V
𝑅1𝑅2
𝑅𝑇ℎ =
𝑅1+ 𝑅2
𝑅𝑇ℎ =
𝑅𝑇ℎ = 8.24561kΩ
So,
2.63158V = 8.24561kΩ × IB + 0.7V + (β + 1) IB × 1kΩ
Ib = 0.017681mA
To find Ve,
Ve = (β + 1) Ib × Re
Ve = (100 + 1) × 1kΩ
Ve = 1.78519V
To find Ie,
Ie = (β + 1) Ib
Ie = (100 + 1) × 0.017681ma
Ie = 1.78578mA
To find Ic,
Ic = βIb
Ic = 100 × 0.017681mA
Ic = 1.7681mA
To find Vc when Ve is given as 1.5V,
Vcc = RcIc + Vce + IeRe
15V = 4.7kΩ × 1.7681mA + Vce + 1.78578mA × 1kΩ
Vce = 4.90415V
Since,
Vce = Vc - Ve
4.90415V = Vc – 1.5V
Vc = 6.4V
PQ2.
To find Vb,
Vcc = 4.7kΩ × Ic + Vc
15V = 4.7kΩ × Ic + 7.5V
Ic = 1.59574mA,
Ic = β × Ib
1.59574mA = 100 × Ib
Ib = 0.015957mA
Vbe = Vb - Ve
0.7V = Vb - IeRe
0.7V = Vb – (β + 1) Ib × Re
0.7V = Vb – (100 + 1) × 0.015957mA × 1kΩ
Vb = 2.31V
To find IR1,
Vcc = R2IR1 + Vbe + IeRe
15V = 47kΩ × IR1 + 0.7V + (β +1) ×Ib × 1kΩ
15V = 47kΩ × IR1 + 0.7V + (100 +1) ×0.015957mA × 1kΩ
IR1 = 0.26996mA
To find R2,
IR1 = Ib + IR2
0.26996mA = 0.016957mA + IR2
IR2 = 0.254mA
Vcc = IR1R1 + IR2R2
15V = 0.26996mA × 47kΩ + 0.254mA × R2
R2 = 9.10189 kΩ
2.2 AC ANALYSIS
To determine hfe,
𝐼𝑒
ℎ𝑓𝑒 = 26 26 𝑚𝑉 𝑚𝑉
ℎ𝑓𝑒 = 101 × 0.015957𝑚𝐴
𝒉𝒇𝒆 = 𝟏𝟔.𝟏𝟑𝟐𝟒𝟔Ω
To determine S,
𝑆=ℎ 𝑓𝑒
ℎ𝑖𝑒
𝑆=
𝑺 = 𝟔. 𝟏𝟗𝟖𝟔𝟖𝑺
To determine Av
𝐴𝑣 = − 𝑅𝑅𝑒𝑐
𝐴𝑣 = −
𝑨𝒗 = -4.7