ELECTRONIC CIRCUIT ANALYSIS-1

LABORATORY MANUAL (ECE - 217)

II/IV ECE SEM - I

By
Mrs. B.Deepa
Mr. V.V.K.Raju
Dr. V. Rajya Lakshmi
Professor & HOD, ECE

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

ANIL NEERUKONDA INSTITUTE OF TECHNOLOGY & SCIENCES (A)

(Affiliated to AU, Approved by AICTE & Accredited by NBA) Sangivalasa-
531 162, Visakhapatnam District, Phone: 08933-225083/84/87
 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
Anil Neerukonda Institute of Technology & Sciences (Autonomous)
Sangivalasa-531 162, Bheemunipatnam Mandal, Visakhapatnam District

Vision of the Institute

ANITS envisions to emerge as a world-class technical institution whose products

represent a good blend of technological excellence and the best of human values.

Mission of the Institute

To train young men and women into competent and confident engineers with
excellent communication skills, to face the challenges of future technology
changes, by imparting holistic technical education using the best of infrastructure,
outstanding technical and teaching expertise and an exemplary work culture,
besides molding them into good citizens

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 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
Anil Neerukonda Institute of Technology & Sciences (Autonomous)
Sangivalasa-531 162, Bheemunipatnam Mandal, Visakhapatnam District

Vision of the Department

To become a centre of excellence in Education, research and produce high quality
engineers in the field of Electronics and Communication Engineering to face the
challenges of future technological changes.

Mission of the Department

To achieve vision department will

Transform students into valuable resources for industry and society by
imparting contemporary technical education.
Develop interpersonal skills and leadership qualities among students by
creating an ambience of academic integrity to participate in various
professional activities
Create a suitable academic environment to promote research attitude among
students.

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 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
Anil Neerukonda Institute of Technology & Sciences (Autonomous)
Sangivalasa-531 162, Bheemunipatnam Mandal, Visakhapatnam District

Program Educational Objectives (PEOs):

PEO1 : Graduates excel in their career in the domains of Electronics, Communication and
Information Technology.
PEO2 : Graduates will practice professional ethics and excel in professional career through
interpersonal skills and leadership qualities.
PEO3 : Graduates demonstrate passion for competence in higher education, research and
participate in various professional activities.

Program Outcomes (POs):

Engineering Graduates will be able to:

1. Engineering knowledge: Apply the knowledge of mathematics, science, engineering
fundamentals, and an engineering specialization to the solution of complex engineering
problems.
2. Problem analysis: Identify, formulate, review research literature, and analyze complex
engineering problems reaching substantiated conclusions using first principles of
mathematics, natural sciences, and engineering sciences.
3. Design/development of solutions: Design solutions for complex engineering problems and
design system components or processes that meet the specified needs with appropriate
consideration for the public health and safety, and the cultural, societal, and environmental
considerations.
4. Conduct investigations of complex problems: Use research-based knowledge and research
methods including design of experiments, analysis and interpretation of data, and synthesis of
the information to provide valid conclusions.
5. Modern tool usage: Create, select, and apply appropriate techniques, resources, and modern
engineering and IT tools including prediction and modeling to complex engineering activities
with an understanding of the limitations.

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6. The engineer and society: Apply reasoning informed by the contextual knowledge to assess
societal, health, safety, legal and cultural issues and the consequent responsibilities relevant
to the professional engineering practice.
7. Environment and sustainability: Understand the impact of the professional engineering
solutions in societal and environmental contexts, and demonstrate the knowledge of, and
need for sustainable development.
8. Ethics: Apply ethical principles and commit to professional ethics and responsibilities and
norms of the engineering practice.
9. Individual and team work: Function effectively as an individual, and as a member or leader
in diverse teams, and in multidisciplinary settings.
10. Communication: Communicate effectively on complex engineering activities with the
engineering community and with society at large, such as, being able to comprehend and
write effective reports and design documentation, make effective presentations, and give and
receive clear instructions.
11. Project management and finance: Demonstrate knowledge and understanding of the
engineering and management principles and apply these to one’s own work, as a member and
leader in a team, to manage projects and in multidisciplinary environments.
12. Life-long learning: Recognize the need for, and have the preparation and ability to engage
in independent and life-long learning in the broadest context of technological change.

Program Specific Outcomes (PSOs):

PSO1 : Implement Signal & Image Processing techniques using modern tools.
PSO2 : Design and analyze Communication systems using emerging techniques.
PSO3 : Solve real time problems with expertise in Embedded Systems.

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 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
Anil Neerukonda Institute of Technology & Sciences (Autonomous)
Sangivalasa-531 162, Bheemunipatnam Mandal, Visakhapatnam District

Electronic Circuits and Analysis-I Laboratory (ECE 217)

ECE 217 Credits:2

Instruction: 3 Practicals / Week Sessional Marks:50
End Exam: 3 Hours End Exam Marks:50

Course Outcomes:
At the end of the course, students will be able to
Measure the important parameters of a PN diode from the V-I
CO1
characteristics.
Analyze different rectifier circuits and voltage regulation circuits
CO2
used in regulated Power supplies.
ECA-I
Design amplifier circuits using BJTs in different configurations and
Lab CO3
determine fL and fH from the frequency response characteristics.
Analyze and Design linear wave shaping circuits and non linear
CO4
waveshaping circuits.
CO5 Analyze and Design different multivibrator circuits.

CO-PO-PSO MAPPING:
CO PO1 PO3 PO4 PO8 PO9 PO10 PSO3
CO1 1 3 1 1 1 1
CO2 2 3 1 1 1 2
CO3 2 2 3 1 1 1 2
CO4 2 2 3 1 1 1 1
CO5 2 2 3 1 1 1 2
Correlation levels 1: Slight (Low)2: Moderate (Medium) 3:Substantial (High)

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 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
Anil Neerukonda Institute of Technology & Sciences (Autonomous)
Sangivalasa-531 162, Bheemunipatnam Mandal, Visakhapatnam District

ELECTRONIC CIRCUIT ANALYSIS-I LABORATORY

LIST OF EXPERIMENTS

CYCLE-I:DESIGN AND SIMULATION USING MULTISIM SOFTWARE

Sl.No NAME OF THE EXPERIMENT Page Number

1. Linear Wave Shaping 13
2. Non-Linear Wave Shaping – Clippers & Clampers 17
3. Halfwave rectifier 21
4. Fullwave rectifier 24
5. Bridge rectifier. 26
6. Common Emitter amplifier. 29
7. Common Collector amplifier 34
8. Astable Multivibrator 36
9. Monostable Multivibrator 38
10. Schmitt trigger circuit 40
11. Two Stage RC-Coupled Amplifier 42

CYCLE-II: (Hardware experiments)

Sl.No NAME OF THE EXPERIMENT Page Number

1. Volt-Ampere Characteristics of PN junction diode and LED 44
2. V-I Characteristics and regulation characteristics of Zener diode. 53
3. Ripple factor calculation of Half wave rectifier and Full wave rectifier 59
4. Diode Clippers 68
5. Clamping Circuits 72
6. Transistor Switch 78
7. Linear wave shaping 80
8. Common Emitter Configuration 84
9. Common Base Configuration 89
10. Drain and transfer characteristics of JFET 93
11. Two Stage RC-Coupled Amplifier 99

12 Bistable Multivibrator 103

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 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
Anil Neerukonda Institute of Technology & Sciences (Autonomous)
Sangivalasa-531 162, Bheemunipatnam Mandal, Visakhapatnam District

ECA-1 LAB (ECE217) SCHEME OF EVALUATION

Total marks for each student to evaluate in lab: 100 marks

Out of 100 marks:

a. External exam Evaluation: 50 marks
b. Internal Evaluation: 50 marks
Internal exam: 25 marks
Evaluation in Lab: 25 marks

EXTERNAL EXAMS (50 Marks)

S.No. Lab exam assessment Marks allotted
1. Write Up-Aim, apparatus, Circuit diagram 05
2. Procedure 05
3. Tabular columns , Theoretical calculations(if 05
any),Formulas
4. Model graphs & precautions 05
5. Performance 10
6. Results & graph 10
7. Viva 10
TOTAL MARKS 50
INTERNAL EVALUATION (50 Marks)
1. Internal Exam at the end of semester(Marks division 25
same as above)
2. Evaluation in lab
Observation(write up for every experiment) 5
Viva (viva in every lab) 5
Record 10
Aim & apparatus-1mark 25
Circuit diagram and procedure-3 marks
Theory-3 marks
Calculations and tables-2 marks
Result-1marks
Attendance 5
>90% - 5 marks
>80% - 90% - 4 marks
>75% - 80% - 3 marks
>=66% - 75% -2 marks
<66% - No Marks
Total marks: 50

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 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
Anil Neerukonda Institute of Technology & Sciences (Autonomous)
Sangivalasa-531 162, Bheemunipatnam Mandal, Visakhapatnam District

RUBRICS
(ECA-II LABORATORY)
S.No Competency Performance Indicator
1. Demonstrate an ability to conduct Laboratory preparation
experiments consistent with their level of Stating clearly the aim of the experiment, its scope and importance for purpose of doing
knowledge and understanding. experiment.
Ability to construct the circuit diagram on a bread board and use meters/ instruments to record
the measured data according to the range selected.
2. Demonstrate an ability to design Finding the appropriate values of the components to meet the specifications.
experiments to get the desired output. Analyze data for trends and correlations, stating possible errors and limitations in choosing the
component values.
3. Demonstrate an ability to analyze the data Tabulate data (tabular form or in graphical form) from the results so as to facilitate analysis and
and reach valid conclusions. explanations of the data, and draw conclusions.

Ability to gather materials and writing in lab record

S.No Performance Indicator Excellent (A) Good(B) Need improvement (C) Fail (D)
100% 80% 60% <40%
1. Laboratory preparation Read and understand the lab Observations are completed Observation s are No effort
&ability to construct the manual before coming to lab. with necessary theoretical incomplete&Obtain the exhibited
circuit diagram on a bread Observations are completed Calculations but With-out incorrect values for
board and use meters/ with necessary theoretical proper understanding & components. Lacks the
instruments to record the calculations including the use Obtain the correct values for appropriate knowledge
measured data according of units and significant only few components after of thelabprocedures.
to the range selected figures & Obtain the correct calculations. Follow thegiven Has no idea what todo
(Based on physical values of the components experimental procedures, but
observation)(5M) after calculations. Follow the obtained results with
given experimental someerrors.
procedures, to obtain the
desired output.
2. Stating clearly the aim of Clearly describes the purpose Clearly describes the purpose Some idea of doing No effort
the experiment, its scope of doing experiment and its of doing experiment. experiment but not very exhibited
and importance scope. Responds confidently, Responds in giving answers clear &responds in
for purpose of doing and precisely in giving to questions but some giving answers
experiment & Oral answers to answers are wrong. toquestions but all
Presentation (Based on questionscorrectly answers are wrong.
viva)(5M)
3. Presentation of record & Well-organized, interesting, Presentation of record Presentation of record No effort
Conclusions of the lab confident presentation of acceptable lacks clarity and exhibited
experiment performed. record & able to correlate organized
(Based on Lab the theoretical concepts with
record)(10M) the concerned lab results
with appropriate reasons.

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 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
Anil Neerukonda Institute of Technology & Sciences (Autonomous)
Sangivalasa-531 162, Bheemunipatnam Mandal, Visakhapatnam District

About the Lab

In this lab students will be able to study and analyses the basic electronic devices like diodes,
BJTs, JFETs, Half-wave & full-wave rectifiers. Rectifiers are introduced and their performances
with different types of filters are observed and basic amplifiers. With this knowledge students
will be able to do mini-projects with the help of diodes and transistors.

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 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
Anil Neerukonda Institute of Technology & Sciences (Autonomous)
Sangivalasa-531 162, Bheemunipatnam Mandal, Visakhapatnam District

LIST OF MAJOR EQMENT IN EDC-I LABORATORY

QUANTITY
SL.NO NAME OF THE EQUIPMENT MAKE

20 MHz, 25MHz & 30MHz DUAL SCIENTECH/SCIENTIFIC/

1. 16
TRACE OSCILLOSCOPE CADDO/FALCON
1 MHz FUNCTION GENERATOR SCIENTECH/SCIENTIFIC/
2. WITH DIGITAL DISPLAY SYSTRONICS/ FUTURE TECH/ 18

METRAVI/APLAB
TRPS 0-30V, 2A DUAL CHANNEL ITL HYD/FALCON
3. 26

TRPS 0-30V, 2A SINGLE CHANNEL

4. ITL HYD 10

AC MICRO VOLTMETER SYSTRONICS

5. 10

5KVA SERVO CONTROLLED

ITL
6. STABILIZER 01

BENCH TOP DIGITAL MULTIMETER METRAVI/APLAB

7. 23

TOTAL EXPENDITURE OF THE LABORATORY (including consumables: Rs. 17,19,646/-

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 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
Anil Neerukonda Institute of Technology & Sciences (Autonomous)
Sangivalasa-531 162, Bheemunipatnam Mandal, Visakhapatnam District

During the lab class:

Do’s
1. Be punctual and regular to the laboratory.

2. Maintain Discipline all the time and obey the instructions.

3. Check the connections properly before turning ON the circuit.

4. Turn OFF the circuit immediately if you see any component heating.

5. Dismount all the components and wires before returning the kit.

6. Any failure / break-down of equipment must be reported to the faculty

Don’ts
1. Don’t touch live electric wires.

2. Don’t turn ON the circuit unless it is completed.

3. Avoid making loose connections.

4. Don’t leave the lab without permission.

5. Do not handle any equipment without reading the instructions/Instruction

manuals

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CYCLE-I: DESIGN AND SIMULATION USING MULTISIM SOFTWARE
1. LINEAR WAVE SHAPING
Aim:
Design a RC LPF and HPF at various time constants and verify the responses for Square wave
input (choose C = 0.1μf, Vi =v= 4 VP-P, f = 10 K Hz) using Multisim

SOFTWARE USED:
Multisim V10.

Circuit diagram:

High Pass Filter:

C XSC1
1 2
Ext Trig
XFG1 +
_
A B
R + _ + _

Design / Calculations:
a) RC = T
Given T = 1/10 KHz = 0.1 mSec
R= (0.1 X10 -3) /0.1μf = 1 K ohms
V1= V / (1+ e –T/2RC) =2.49v
V1’ = V/(1+e T/2RC) =1.51 v
% tilt =2 (V1-V1’)/V =(2.49-1.51)/2 = 49%
Output Waveform:

b) RC >> T
Choose RC = 100T = 1 m Sec

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 R= (10 -3)/(0.1x10 -6)
=100 k ohms
The output waveform will be identical to input

Output Waveform:

c) RC << T
RC = 0.1 T
R= (0.1x 10 -4)/(0.1x10 -6)
=100 Ohms
Output Waveform:

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Low Pass Filter:

Circuit Diagram:
XSC1
1 R
2 Ext Trig
XFG1 +

C _
A B
+ _ + _

Design / Calculations:
For f=1KHz
(a) RC=T
C=0.1μf, R= 10K Ohms

Output Waveform:

b) RC >> T
C=0.1μf, R= 100K Ohms
Output Waveform:

c) RC << T

C=0.1μf, R= 1K Ohms

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Procedure:
HPF:
1. Open new schematic capture in Multisim.
2. Connect the circuit as shown in figure using Toolsbarcomponents.
3. Now apply a square wave of frequency 1KHz and amplitude 8V(P-P) using function
generator available in Multisim.
4. Now click on Simulate and then RUN the circuit.
5. Now observe the output waveform using oscilloscope.
6. For transient analysis….
SimulateAnalysesTransient analysis
7. Enter the time duration and select output node .click on simulate.
8.Repeat same procedure for LPF .

Result:
LPF and HPF are designed at various time constants and the responses for square wave input
is observed & hence plotted using Multisim software.

Viva questions:
1. What is linear wave shaping?
2. How low pass RC circuit works as an integrator?
3. How low pass RC circuit works as differentiator?
4. Define time constant?
5. Define tilt?
6. Explain the output wave forms of high pass and low pass circuit for different conditions.

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 2. NON-LINEAR WAVE SHAPING – CLIPPERS & CLAMPERS
Aim: To study the clipping and clamping circuits using Multisim.
SOFTWARE USED:
Multisim V10.

Circuit diagram:
Series Diode Clipper:-
XSC1
D1
V11 3 Ext T rig
+

5 Vpk 1N4007 _
A B
1kHz R1 + _ + _

0° 2.2kΩ
0

Output Waveform:

Series Diode Clipper with Bias:

XSC1
D1
1 3 Ext T rig
+

V1 1N4007 _
A B
R1 + _ + _
5 Vpk 2.2kΩ
1kHz
0° 2
V2
2V

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Output Waveform:

Shunt Diode Clipper:

XSC1

Ext Trig
+

V1 1 R1 2 _
A B

2.2kΩ + _ + _
5 Vpk
1kHz D1
0° 1N4007
0

Output Waveform:

Shunt Diode Clipper with Bias

XSC1

Ext T rig
+

V1 1 R1 2 _
A B

2.2kΩ + _ + _
5 Vpk
1kHz D1
1N4007
0°
3
V2
2V
0

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Output Waveform:

Slicer:
XSC1

Ext Trig
+

V1 1 R1 _
2 A B

2.2kΩ + _ + _
5 Vpk D2
1kHz D1 1N4007
1N4007
0°
3 4
V2 V3
2V 2V
0

Output Waveform:

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Negative Clamper

XSC1

Ext Trig
C1 +
1
V1 _
2 A B
100nF + _ + _
5 Vpk D1 R1
1kHz 1N4007 100kΩ
0°
0

Output Waveform:

Positive Clamper
XSC1

Ext Trig
+
C1 _
1 2
V1 A B
+ _ + _
100nF
5 Vpk D1 R1
1kHz 1N4007 100kΩ
0°
0

20
Output Waveform:

Procedure:
1. Open new schematic capture in Multisim.
2. Connect the circuit as shown in figure using Toolsbarcomponents.
3. Now apply a sine wave of frequency 1KHz and amplitude 10V(P-P) using function generator
available in Multisim.
4. Now click on Simulate and then RUN the circuit.
5. Now observe the output waveform using oscilloscope.

Result:
Different types of clipping and clamping circuits are studied and observed the response for
different combinations of VR and diodes using Multisim..

Viva questions
1. What is meant by non linear wave shaping?
2. What is clipper? What are the different types of clippers?
3. What are the different applications of clipper?
4. What is two level clipper
5. Explain the operation of positive and negative clipper?

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 3. HALFWAVE RECTIFIER

Aim: To study the operation of half-wave rectifier and find its ripple factor using Multisim.

Software: Multisim

Circuit Diagram:

Without filter:
XSC1

Ext Trig
+

V1 1 T1 D1 _
3 4 A
_
B
_
+ +
230 Vrms 1N4007
50 Hz
R1
0° TS_AUDIO_10_TO_1 1kΩ
2

Input:

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Output:

Circuit Diagram with capacitor filter:

XSC1

Ext Trig
+

V1 1 T1 D1 _
3 4 A
_
B
_
+ +
230 Vrms 0
1N4007
50 Hz
0° TS_AUDIO_10_TO_1 C1 R1
2 47uF 1kΩ

Input:

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Output:

Procedure:
1. Open new schematic capture in Multisim.
2. Connect the circuit as shown in figure using Toolsbarcomponents.
3. Now apply a sine wave of frequency 50Hz ,230Vrms across primary coil of the transformer.
4. RUN the circuit and observe the output waveform using oscilloscope.

Result:
The operation of the half-wave rectifier is studied using Multisim and ripple factor is calculated.

VIVA QUESTIONS:

1. What is rectifier?
2. What is filter?
3. Define Ripple factor.
4. What is Peak inverse voltage?
5. How capacitor acts as filter.
6. Define regulation.
7. What are the applications of rectifiers?
8. Define transformer utilization factor.

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 4. FULLWAVE RECTIFIER

Aim: To study the operation of full-wave rectifier and find its ripple factor using Multisim.

Software:
Multisim

Circuit Diagram:

Without filter:
XSC1

Ext Trig
+

V1 1 T1 D1 _
3 A
_
B
_
+ +
230 Vrms 4
1N4007
50 Hz 5 D2
0° TS_AUDIO_10_TO_1 R1
2 1kΩ
1N4007
0

Input:

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Output:

With filter:
XSC1

Ext Trig
+

V1 1 T1 D1 _
3 4
A
_
B
_
+ +
230 Vrms 1N4007 C1
50 Hz 5 D2 47uF
0° TS_AUDIO_10_TO_1 R1
2 1kΩ
1N4007
0

Input:

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Output:

Procedure:
1. Open new schematic capture in Multisim.
2. Connect the circuit as shown in figure using Toolsbarcomponents.
3. Now apply a sine wave of frequency 50Hz ,230Vrms across primary coil of the transformer.
4. RUN the circuit and observe the output waveform using oscilloscope.

Result:
The operation of the full-wave rectifier is studied using Multisim and ripple factor is calculated.

VIVA QUESTIONS:

1. What is rectifier?
2. What is filter?
3. Define Ripple factor.
4. What is Peak inverse voltage?
5. How capacitor acts as filter.
6. Define regulation.
7. What are the applications of rectifiers?
8. Define transformer utilization factor.

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 5. BRIDGE RECTIFIER
Aim: To study the operation of bridge rectifier and find its ripple factor using Multisim.

Software:
Multisim

Circuit Diagram:

Without filter:

D1 D3
1N4007 1N4007
XSC1
V1 1 T1
Ext Trig
+
230 Vrms 5 _
50 Hz A B
_ _
0° TS_AUDIO_10_TO_1 D2 D4 + +

2 1N4007 1N4007 R1
1kΩ
6
0

Input:

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Output:

With filter:

D1 D3
1N4007 1N4007
XSC1
V1 1 T1
Ext Trig
+
230 Vrms 4 _
50 Hz C1 A B
_ _
0° TS_AUDIO_10_TO_1 D2 D4 + +

2 1N4007 1N4007 R1
1kΩ
6 47uF
0

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Input:

Output:

Procedure:
1. Open new schematic capture in Multisim.
2. Connect the circuit as shown in figure using Toolsbarcomponents.
3. Now apply a sine wave of frequency 50Hz ,230Vrms across primary coil of the transformer.
4. RUN the circuit and observe the output waveform using oscilloscope.

Result:
The operation of the bridge rectifier is studied using Multisim and ripple factor is calculated.

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VIVA QUESTIONS:

1. What is rectifier?
2. What is filter?
3. Define Ripple factor.
4. What is Peak inverse voltage?
5. How capacitor acts as filter.
6. Define regulation.
7. What are the applications of rectifiers?
8. Define transformer utilization factor.

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 6. COMMON EMITTER AMPLIFIER

AIM: To design a common emitter amplifier for the given Specifications and simulate the same
circuit using Multisim.
SOFTWARE USED:
Multisim V10.

Circuit diagram:
VCC
12V

VCC
XSC1
R4
R1 2.2kΩ
47kΩ C3 Ext T rig
+
1 6 _
A B
10uF + _ + _

Q1
R6 C1
4 3
600Ω 10uF R5
5 BC107BP
V1 10kΩ

R2 2
20mVpk
1kHz 10kΩ R3 C2
0° 680Ω 22uF

Output waveform:

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Frequency Response:

Calculations:

1. Gain(dB ) =
2. Bandwidth =

PROCEDURE:

1. Connect the circuit diagram as shown in Figure.

2. Apply a sine wave of frequency 1kHz,20mv (p) amplitude as a input signal
3. Select simulate and then click on RUN.
4. Observe the amplified signal using oscilloscope.
5. For frequency response…..
SimulateAnalysesAC analysis
6. Enter start and stop frequencies
7. Write the expression for gain and click on simulate.
8. Now observe the magnitude and phase response of amplifier.
9. From magnitude response calculate gain and bandwidth.

Result:
CE amplifier is designed and simulated using multisim.

VIVA QUESTIONS:

1. Why CE configuration is most widely used?

2. Draw the equivalent Circuit of C.E
3. What is the Current Gain,voltage gain,i/p and o/p impedance in CE?.
4. Relation between ‘’ and ‘’ and γ
5. Give the condition to operate the given Transistor in active,saturation &Cut-off Regions
6. What is Emitter Efficiency?

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 7. COMMON COLLECTOR AMPLIFIER

AIM: To design a common collector amplifier for the given Specifications and simulate the
same circuit using Multisim.
SOFTWARE USED:
Multisim V10.

Circuit diagram:
VCC
12V

VCC

R1
8kΩ

Q1 XSC1
C1
1 3
Ext Trig
+
47uF
BC107BP _
V1 C2 A B
+ _ + _
2
20mVpk R2 4
10kΩ 47uF
1kHz R3
0° 6kΩ

Output waveform:

34
Frequency response

Calculations:

1. Gain(dB ) =
2. Bandwidth =

PROCEDURE:
1. Connect the circuit diagram as shown in Figure.
2. Apply a sine wave of frequency 1kHz,20mv (p) amplitude as a input signal
3. Select simulate and then click on RUN.
4. Observe the amplified signal using oscilloscope.
5. For frequency response…..
SimulateAnalysesAC analysis
6. Enter start and stop frequencies
7. Write the expression for gain and click on simulate.
8. Now observe the magnitude and phase response of amplifier.
9. From magnitude response calculate gain and bandwidth.

Result:
CC amplifier is designed and simulated using multisim.

Viva Questions:

1. Why CC amplifier is known as emitter follower?

2. Mention the applications of CC amplifier?
3. What are the differences between CE, CB and CC amplifier?
4. What are the basic characteristics of a CC amplifier?

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 8. ASTABLE MULTIVIBRATOR
Aim :-
To design an Astable Multivibrator to generate a Square wave of 1KHz frequency and simulate
using Multisim software.

SOFTWARE USED:
Multisim V10.

Circuit diagram:
1

VCC
15V
VCC XSC1

Ext Trig
+
R1 R4 R3 R2 _
1.47kΩ 72.4kΩ 72.4kΩ 1.47kΩ A B
+ _ + _

C1 3 4 C2 2

10nF 10nF
Q1 Q2

BC107BP BC107BP

Design:
The period T is given by
T = T1 + T2 = 0.69 (R1C1 + R2C2)
For symmetrical circuit with R1 = R2 = R & C1 = C2 = C
T = 1.38 RC
10-3 = 1.38 x 10-9 x R
R = 724KΩ (When c=1nf) ;

R= (10 -3) /1.38X10X10 -9

=72.4 K Ω (where c=10nf)

R=7.24 K Ω (where c=100nf)

Let Vcc=15V ,hfe=51(for BC 107)
Vbe sat=0.7V , Vce sat=0.3 V
Choose Ic max=10 mA
RC = (VCC – VCESat) / ICmax

36
= (15 – 0.3) / (10 x 10-3) = 1.47KΩ

Procedure:
1. Connect the circuit as shown in figure using Multisim.
2. Apply the supply voltage Vcc =15V
3. Calculate the pulse width (T) of the Astable O/P with the selected values of R & C on the
CRO. See that CRO is in DC mode.
4. Connect the CRO channel-1 to the collector and base of the Transistor Q1&Q2..
5. Measure the pulse width and verify with the theoretical value.
6. Obtain waveforms at different points like VB1, VB2, VC1 & VC2.

Model waveforms:

Result : An Astable Multivibrator is designed and simulated using Multisim software.

Viva Questions:

1. What is a multivibrator?
2. How many types of multivibrators exist?
3. What are the states?
4. What are the applications of Astable multi?
5. What is the significance of Astale multi?

37
 10.MONOSTABLE MULTIVIBRATOR

Aim : To design a monostable multivibrator for the Pulse width of 0.03mSec and simulate using
Multisim.
SOFTWARE USED:Multisim

Circuit Diagram:-

Design:-
To design a monostable multivibrator for the Pulse width of 0.03mSec.
Choose ICmax = 15mA, VCC = 15V, VBB = 15V, R1 = 10KΩ.
T = RC ln 2
T = 0.69 RC
Choose C = 10nf
0.3 x 10-3Sec = 0.69 x R x 10 x 10-9
R = 43.47 KΩ.
Rc= (Vcc- Vce sat)/ Ic max.
RC = (15 – 0.2) / 15mA = 1kΩ
For more margin Given,
VB1= -1.185
VB1= -VBB R1/( R1+R2 )+ Vce sat R2/(R1+R2)
-1.18=( -15 R1+ 0.2 R2) / (R1+R2)
Given R1=10 KΩ
We will R2= 100KΩ

38
Procedure:
1. Wire the circuit as shown in the circuit diagram.
2. Calculate the pulse width (T) of the Monostable O/P with the selected values
of R & C on the CRO. See that CRO is in DC mode.
3. Select the triggering pulse such that the frequency is less than 1/TApply the
triggering input to the circuit and to the CRO’s channel 1 .
4. Connect the CRO channei-2 to the collector and base of the
TransisterQ1&Q2..
5. Adjust the triggering pulse frequency to get stable pulse on the CRO and now
measure the pulse width and verify with the theoretical value.
6. Obtain waveforms at different points like VB1, VB2, VC1 & VC2.
7. Repeat the experiment for different combinations of R & C (C = 1nf, 100nf).
Calculate R for same value of T = 0.3 mSec.

Result :
A collector coupled Monostable Multivinbrator is designed, the waveforms are
observed using Multisim.

39
Viva Questions:

1. What is a multivibrator?
2. How many types of multivibrators exist?
3. What are the states?
4. What are the applications of Monostable multi?
5. What is the significance of Monostable multi?

40
 10. SCHMITT TRIGGER
Aim:-
To study the operation of Schmitt trigger circuit using Multisim and find the UTP and LTP
voltages & compare with the theoretical values.

SOFTWARE USED:
Multisim V10.

Circuit diagram:
VCC
12V

VCC
R4
R2 1kΩ XSC1
1kΩ
4
Ext Trig

1 R5 +
_

10kΩ Q2 A B
C1 + _ + _
2
Q1
R1 100nF R6
5 10kΩ BC107BP
1kΩ
6 BC107BP 0
V1

5 Vpk 3
1kHz
0°
R3
100Ω
0

Procedure:
1. Connect the circuit on the bread board as per circuit diagram
2. Keep the peak to peak input voltage 10V using function generator
3. Keep the VCC voltage at 12V constant using regulated power supply
4. Observe the output waveform in the CRO
5. Plot the values and draw the graph
6. Calculate the upper triggering point & lower triggering point

41
Model Waveform:

Result:
The operation of Schmitt trigger is verified and the UTP & LTP voltages are measured using
Multisim.

1. What is a multivibrator?
2. How many types of multivibrators exist?
3. What are the states?
4. What are the applications of Schmitt trigger?
5. What is the significance of Schmitt triger??

42
 11. TWO STAGE RC-COUPLED AMPLIFIER

AIM: To design a two stage RC coupled amplifier for the given Specifications and simulate the
same circuit using Multisim.
SOFTWARE USED: Multisim V10.

Circuit diagram:

Frequency Response:

43
Calculations:

1. Gain(dB ) =
2. Bandwidth =

PROCEDURE:

1. Connect the circuit diagram as shown in Figure.

2. Apply a sine wave of frequency 1kHz,20mv (p) amplitude as a input signal
3. Select simulate and then click on RUN.
4. Observe the amplified signal using oscilloscope.
5. For frequency response…..
SimulateAnalysesAC analysis
6. Enter start and stop frequencies
7. Write the expression for gain and click on simulate.
8. Now observe the magnitude and phase response of amplifier.
9. From magnitude response calculate gain and bandwidth.

Result:
Two stage RC coupled amplifier is designed and simulated using Mu

Viva Questions:
1. What is a Multistage amplifier?
2. What is the need of coupling device?
3. What are the applications of RC coupled amplifier?
4. What are the advantages and disadvantages of RC coupled multistage amplifier?
5. What is the effect of multistage on gain and bandwidth of the amplifier?

44
 CYCLE-II: (Hardware experiments)

Exp-1: Volt-Ampere Characteristics of PN junction Diode and LED

Objective:

1. To plot Volt-Ampere Characteristics of Silicon P-N Junction Diode.

2. To find cut-in Voltage for Silicon P-N Junction diode.
3. To find static and dynamic resistances for P-N Junction diode.
4. To Plot the V-I Characteristics of LED and analyze the relation of current flowing through the
diode and the intensity of glow.
Apparatus:

S.No Apparatus Type Range Quantity

01 PN Junction diode 1N4007 01

02 Resistance 470Ω,1KΩ 01

03 Regulated Power supply (0-30V) 01

04 Ammeter (0-100mA),(0-100µA) 01

05 Voltmeter (0-2V),(0-30V) 01

06 LED 01

07 Breadboard and Wires

Theory:

The semi conductor diode is created by simply joining an n-type and a p-type material together
nothing more just the joining of one material with a majority carrier of electrons to one with a
majority carrier of holes.
The P-N junction supports uni-directional current flow. If +ve terminal of the input supply is
connected to anode (P-side) and –ve terminal of the input supply is connected to cathode (N-
side), then diode is said to be forward biased. In this condition the height of the potential barrier
at the junction is lowered by an amount equal to given forward biasing voltage. Both the holes
from p-side and electrons from n-side cross the junction simultaneously and constitute a forward

45
current( injected minority current – due to holes crossing the junction and entering N-side of
the diode, due to electrons crossing the junction and entering P-side of the diode).
Assuming current flowing through the diode to be very large, the diode can be approximated as
short-circuited switch. If –ve terminal of the input supply is connected to anode (p-side) and +ve
terminal of the input supply is connected to cathode (n-side) then the diode is said to be reverse
biased. In this condition an amount equal to reverse biasing voltage increases the height of the
potential barrier at the junction. Both the holes on p-side and electrons on n-side tend to move
away from the junction thereby increasing the depleted region. However the process cannot
continue indefinitely, thus a small current called reverse saturation current continues to flow in
the diode. This small current is due to thermally generated carriers. Assuming current flowing
through the diode to be negligible, the diode can be approximated as an open circuited switch.
The volt-ampere characteristics of a diode explained by following equation:
V
VT
I  I 0 (e  1)
I=current flowing in the diode
Io=reverse saturation current
V=voltage applied to the diode
KT T
VT=volt-equivalent of temperature =   26mA at room temp
q 11,600
η = 1 (for Ge)
η = 2 (for Si)

It is observed that Ge diode has smaller cut-in-voltage when compared to Si diode. The reverse
saturation current in Ge diode is larger in magnitude when compared to silicon diode.

LED-Theory:
LEDs emit light when an electric current passes through them.
LED is connected in the circuit as shown in figure. LED operates only in forward biased
condition. Under forward bias condition the anode is connected to the positive terminal and the
cathode is connected to the negative terminal of the battery. It is like a normal pn junction diode
except the basic semiconductor material is GaAs or InP which is responsible for the color of the

46
light. When it is forward biased the holes moves from p to n and electrons flow from n to p. In
the junction the carriers recombine with each other and released the energy in the form of light.
Thus LED emits light under forward biased condition. Under reverse biased condition, there is
no recombination due to majority carriers, so there is no emission of light.
Circuit Diagrams:
a) Forward Bias of PN Diode

IF
470Ω + -
A

(0-100mA)
VS IN4007 +
A VF (0-2V)
(0-30V)
-
K

b) Reverse Bias of PN diode:

IR
1KΩ + -
A

VS (0-100µA)
+
(0-30V) VR (0-30V)
K
-
IN4007
A

c) Forward biased LED:

(0-100 mA)

47
 470Ω + -
mA

(0-30)Vs
+
(0-10)V
VL
_
- _

Procedure:
a) Forward biased condition-PN diode
1. Connect the PN Junction diode in forward bias i.e Anode is connected to positive of the power
supply and cathode is connected to negative of the power supply .
2. Use a Regulated power supply of range (0-30)V and a series resistance of 470Ώ
3. By varying the input voltage in steps of 0.1V, note down corresponding Ammeter
readings.(IF) and voltmeter reading.
4. Plot the graph between forward voltage (VF) and forward current (IF).
b) Reverse biased condition-PN Diode

1. Connect the PN Junction diode in Reverse bias i.e; anode is connected to negative of the
power supply and cathode is connected to positive of the power supply.
2. Use a Regulated power supply of range (0-30)V and a series resistance of 1KΏ
3. By varying the input voltage vary voltage (VR) in steps of 1V and note down corresponding
Ammeter readings.(IR)
4. Plot the graph between Reverse voltage (VR) and Reverse current (IR).
c) V-I characteristics of LED
1. Connections must be made as per the circuit diagram.
2. Varying the source voltage in steps of 0.1V note down the corresponding current and the
voltage readings.
3. At the same time the glow intensity of the light emitting diode is also to be noted.
4. Plot the graph between voltage and current for forward bias

48
Observation Table of PN diode:

1. Table for observations of forward biased PN diode

S.No VS VF IF
(Volts) (Volts) (mA)

49
 2. Table for observations of Reverse biased PN diode

S.No VS VR IR
(Volts) (Volts) (µA)

Table for observations of Forward biased LED:

S.No Intensity of
VS(V) VL(V) If(mA)
glow

50
Model Graph- VI characteristics of PN Diode:

If(mA)

Vγ
Vr(v) Vf(v)

Fig: V-I Characteristics of PN diode

Model Graph- Forward bias of LED:

IF(mA)

VF(v)-
Fig: Forward bias characteristics of LED

51
Calculations- PN Diode:

Static Resistance: To find the forward static resistance locate a point on characteristic curve
obtained from the forward bias characteristics which is called operating point Q and draw a line
onto the X-axis and Y-axis to obtain VF and IF Calculate static forward resistance using the
formulae
VF
Static forward Resistance RDC   at Q-point.
IF
Dynamic Resistance: The dc resistance of a diode is independent of the shape of the
characteristic in the region surrounding the point of interest. If a sinusoidal input is applied rather
than a dc input ,the varying input will move the instantaneous operating point up and down a
region of the characteristics and thus defines a specific change in current and voltage. To find the
ac or dynamic resistance draw a straight line drawn tangent to the curve through the Q-point as
shown in the figure will define a particular change in voltage and current that can be used to
determine the ac or dynamic resistance for this region of the diode characteristics.
V d
Dynamic Resistance rd = Ω at Q-point
I d

Forward characteristics

52
Calculating LED resistor value

LED must have a resistor connected in series to limit the current through the LED; otherwise it
will burn out almost instantly. The resistor value, R is given by:

(VS VL )
R
I
VS = supply voltage
VL = LED voltage (usually 2V, but 4V for blue and white LEDs)
I = LED current (e.g. 20mA), this must be less than the maximum permitted
For example:
If the supply voltage VS = 10V, and you have a red LED (VL = 2V),requiring a current I = 20mA
R = (10V - 2V) / 0.02A = 400 , so choose 470Ω (the nearest standard value which is greater).

Precautions:
1. While doing the experiment do not exceed the ratings of the diode. This may lead to damage
of the diode.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as per
the circuit diagram.

Result:
1. Cut in voltage = ……… V
2. Static forward resistance = ………. Ω
3. ac or Dynamic resistance = ………. Ω
4. LED resistance= ……………. Ω

VIVA QUESTIONS:
1. When diode acts like ideal switch?
2. What is the cut in voltage? Give typical values for Ge and Si.
3. What is reverse saturation current?
4. What is Dynamic and static resistance?
5. What is V-I characteristics equation?
6. Define potential barrier.

53
7. Define doping.
8. What is the effect of temperature on Ico.
9. Define a Q point.
10. Explain how the diode can acts as a capacitor.
EXP-2: V-I Characteristics and Regulation Characteristics of Zener Diode
Objectives:

1. To plot Volt-Ampere Characteristics of Zener Diode in reverse bias.

2. To find Zener Breakdown Voltage in reverse biased condition.
3. To find load regulation characteristics of Zener voltage regulator
Apparatus:

S.No Apparatus Type Range Quantity

01 Zener diode IMZ 5.1V 01

02 Resistance 470Ω 01

03 Regulated Power supply (0-30V) 01

04 Ammeter (0-100mA) 02

05 Voltmeter (0-10V) 01

06 Decade Resistance Box (0-10K) 01

07 Breadboard and Wires

Theory:
An ideal P-N Junction diode does not conduct in reverse biased condition. A zener diode
conducts excellently even in reverse biased condition. These diodes operate at a precise value of
voltage called break down voltage. A zener diode when forward biased behaves like an ordinary
P-N junction diode.
A zener diode when reverse biased can either undergo avalanche break down or zener break
down.
Avalanche break down:-If both p-side and n-side of the diode are lightly doped, depletion
region at the junction widens. Application of a very large electric field at the junction may

54
rupture covalent bonding between electrons. Such rupture leads to the generation of a large
number of charge carriers resulting in avalanche multiplication.
Zener break down:-If both p-side and n-side of the diode are heavily doped, depletion region at
the junction reduces. Application of even a small voltage at the junction ruptures covalent
bonding and generates large number of charge carriers. Such sudden increase in the number of
charge carriers results in zener mechanism.

Circuit Diagram:
Reverse Biased Zener diode
(0-100mA)
470Ω + -
A

(0-30)Vs K
+
IMZ5.1 VR (0-10V)
_
A -

Zener diode as shunt Voltage Regulator A

(0-100mA)
470Ω + -
-

+
+
K (0-10)V
VL
IMZ5.1
VSZ
A RL - _
-

55
Procedure:
To plot V-I characteristics of Zener diode in reverse bias condition and to find
Zener breakdown voltage:
1. Connect the Zener diode in Reverse bias i.e; anode is connected to negative of the power
supply and cathode is connected to positive of the power supply as in circuit.
2. Vary the input voltage in steps of 1V and note down reverse voltage(VR) and the
corresponding values of reverse current ( IR ).
3. Plot the graph between reverse voltage (VR) and the reverse current (IR).

To plot the load regulation characteristics of the Zener voltage regulator.

1. Connect the Zener diode in Reverse bias i.e; anode is connected to negative of the power
supply and cathode is connected to positive of the power supply as in circuit.
2. In finding load regulation , input voltage (Vsz) is kept constant i.e source voltage is chosen as
a voltage at which Zener voltage VZ is remaining constant while the current is increasing(Vsz
from 1st circuit characteristics)
3. Measure VNL (No load voltage) by opening the load resistance.
4. Connect the load resistance, and vary the load resistance from 1100Ω to 100Ω in steps of
100Ω and note down the readings of VL and IZ
5. Calculate % Regulation by using the formula given below.
VNL  VL
% Re gulation  X 100
VL

56
Observation Table:
1. To plot V-I characteristics

S.No Vs(V) VR(V) IR(mA)

1. Find load regulation characteristics

VNL=______________________

S.No RL IZ(mA) VL(V) % Regulation

1100
To
100
(in steps of
100)

Note: Keeping the input voltage constant if the load resistance is increased zener current
increases so as to make the load voltage to remain constant.

57
Model Graphs:

Calculations from Graph

To find Zener breakdown voltage
1.In the reverse characteristics of Zener diode observe the voltage at which the reverse current is
abnormally increasing while the reverse voltage remain constant.
2.That particular reverse voltage is called the breakdown voltage of the Zener diode

Precautions:

1. While doing the experiment do not exceed the ratings of the diode. This may lead to damage
of the diode.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as per
the circuit diagram.
Result
1.The V-I characteristics of Zener diode were plotted and the Zener breakdown voltage was
determined and is given as ------------------------V

2. Load regulation characteristics were plotted.

58
VIVA QUESTIONS
1. Difference between Zener and Avalanche breakdown.
2. What is the difference between zener and ordinary diode?
3. Draw equivalent circuit for Zener diode.
4. What is Breakdown voltage?
5. What are the applications of zener diode?
6. How zener acts as a regulator?

59
 Exp-3. Ripple Factor Calculation of Half Wave Rectifier
Objective
1. To plot input and output waveforms of the Half Wave Rectifier with and without Filter
2. To find ripple factor of Half Wave Rectifier with and without Filter
3. To plot input and output waveforms of the Full Wave Rectifier with and without Filter
4. To find ripple factor for Full Wave Rectifier with and without Filter

Apparatus
S.No Apparatus Type Range Quantity

01 Transformer Center 12-0-12V 01

tapped
02 Diode IN4007 01

03 Resistance 1KΩ 01

04 Capacitor 1000µF/25V 01

05 Multimeter (0-20V) 01

06 CRO 01

07 Breadboard and Wires

Theory
A device is capable of converting a sinusoidal input waveform into a unidirectional waveform
with non zero average component is called a rectifier.
A practical half wave rectifier with a resistive load is shown in the circuit diagram. During the
positive half cycle of the input the diode conducts and all the input voltage is dropped across R L.
During the negative half cycle the diode is reverse biased and it acts as almost open circuit so the
output voltage is zero. The filter is simply a capacitor connected from the rectifier output to
ground. The capacitor quickly charges at the beginning of a cycle and slowly discharges through
RL after the positive peak of the input voltage. The variation in the capacitor voltage due to
charging and discharging is called ripple voltage. Generally, ripple is undesirable, thus the
smaller the ripple, the better the filtering action.

60
Theory- Full wave rectifier:

The full wave rectifier consists of two half wave rectifiers connected to a common load. One
rectifies during positive half cycle of the input and the other rectifying the negative half cycle.
The transformer supplies the two diodes (D1 and D2) with sinusoidal input voltages that are
equal in magnitude but opposite in phase. During input positive half cycle, diode D1 is ON and
diode D2 is OFF. During negative half cycle D1 is OFF and diode D2 is ON. Generally, ripple is
undesirable, thus the smaller the ripple, the better the filtering action.

Circuit Diagram

Halfwave Rectifier without filter

Step Down
Transformer
(230/12V))
D1
ph
A 1N4007 K

+ +
12V AC 1KΩ Vm
230V 50Hz RL
50Hz V (0-20v) CRO

- -

61
 Half wave Rectifier with Capacitor Filter

A K
1N4007

+
_

Full wave Rectifier without Filter

Full wave Rectifier with capacitor Filter

62
CALCULATIONS:
Theoretical calculations for Ripple factor of Halfwave Rectifier:-
Without Filter:-
Vm
Vdc 

Vm
Vrms 
2

2
V 
Ripple factor =  rms   1 =1.21
 Vdc 
With Capacitor Filter:-
1
Ripple factor =
2 3 fCR L
Where f =50Hz
C =1000µF
RL=1KΩ
Theoretical calculations for Ripple factor of Fullwave Rectifier:-
2Vm
Without Filter:- Vdc 

Vm
Vrms 
2

2
V 
Ripple factor =  rms   1 =0.482
 Vdc 

With Capacitor Filter:-

1
Ripple factor =
4 3 fCRL
Where f =50Hz
C =1000µF
RL=1KΩ

63
Procedure :

HWR Without Filter:

1. Connections are made as per the circuit diagram of the rectifier without filter.
2. Connect the primary side of the transformer to ac mains and the secondary side to the rectifier
input.
3.Note down the no load voltage before applying the load to the Circuit and by using the
Multimeter, measure the ac input voltage of the rectifier and its frequency.
4.Now Vary the RL in steps of 100Ω by varying the DRB from 1100Ω to 100Ω and note down
the load voltage (VL) using the multimeter for each value of R L and calculate the percentage
regulation.
5.Measure the AC and DC voltage at the output of the rectifier for each value of R L using
Multimeter.
6.Now Observe the output waveform on CRO across RL and find out value of Vm.
7. Now calculate Vdc, Vrms, Ripple Factor and other parameters of half wave rectifier according
to the given formulae.
8.Measure the amplitude and timeperiod of the transformer secondary(input waveform) by
connecting CRO.

9.Feed the rectified output voltage to the CRO and measure the time period and amplitude of the
waveform.
HWR With Capacitor Filter:

1. Connections are made as per the circuit diagram of the rectifier with filter.
2. Connect the primary side of the transformer to ac mains and the secondary side to the rectifier
input.
3. By the multimeter, measure the ac input voltage of the rectifier and, ac and dc voltage at the
output of the rectifier.
4.Measure the amplitude and timeperiod of the transformer secondary(input waveform) by
connecting CRO.

5.Feed the rectified output voltage to the CRO and measure the time period and amplitude of the
waveform.

FWR Without Capacitor Filter:

1. Connections are made as per the circuit diagram of the rectifier without filter.
2. Connect the primary side of the transformer to ac mains and the secondary side to the rectifier
input.
3. By the multimeter, measure the ac input voltage of the rectifier and, ac and dc voltage at the
output of the rectifier.
4. Measure the amplitude and time period of the transformer secondary(input waveform) by
connecting CRO.

64
5. Feed the rectified output voltage to the CRO and measure the time period and amplitude of the
Waveform.

FWR With Capacitor Filter:

1. Connections are made as per the circuit diagram of the rectifier with filter.
2. Connect the primary side of the transformer to ac mains and the secondary side to the rectifier
input.
3. By the multimeter, measure the ac input voltage of the rectifier and, ac and dc voltage at the
output of the rectifier.
4. Measure the amplitude and time period of the transformer secondary(input waveform) by
connecting CRO.

5. Feed the rectified output voltage to the CRO and measure the time period and amplitude of the
waveform.

Observation Table:
HWR Without Filter:

( )
VL R.F=
RL Vm √
(V ( )
(Ω) (V) (V) (V)
)
( )

HWR With Capacitor Filter:

VL ( )
Vm Vr ( )
RL (V R.F=
(V) (V) (V)
(Ω) ) √

65
FWR without Filter:

( ) %
VL
RL Vm √ ( ) Regulation
(V √ R.F=
(Ω) (V) (V) ( ) ( )
) (V) =
( )

FWR with capacitor filter

VL %
RL Vm ( ) ( ) Regulation
(V Vr (V) R.F=
(Ω) (V) (V) ( ) ( )
) (V) √
=

Model Graphs:
Half Wave Rectifier:
Amplitude
T(se
V c)
m Input wave

Time

-
V

Output without
V

m
Time

Vr
V
Output with filter
m
Time

66
Fullwave Rectifier:

Amplitude
(V)
Vm

Input wave form

Time (sec)

-Vm

Output without filter

Vm

Time (sec)

Vr

Vm Output with filter

Time (sec)

PRECAUTIONS

1. The primary and secondary sides of the transformer should be carefully identified.
2. The polarities of the diode should be carefully identified.

Result:
The input and output waveforms of half wave rectifier and full wave rectifier are is plotted .
Ripple factor of HWR without Filter =
Ripple factor of HWR with Capacitor Filter =
The input and output waveforms of full wave rectifier are is plotted .

67
 Ripple factor of FWR without Filter =
Ripple factor of FWR with Capacitor Filter =

VIVA QUESTIONS:

1. What is rectifier?
2. What is filter?
3. Define Ripple factor.
4. What is Peak inverse voltage?
5. How capacitor acts as filter.
6. Define regulation.
7. What are the applications of rectifiers?
8. Define transformer utilization factor.

68
 4. DIODE CLIPPERS
Objective:
To observe the waveforms of clipper circuits using
a. Positive clipper
b. Negative clipper
c. Two level clipper or slicer circuit.

Apparatus:
1. 1N 4007 diodes (2)
2. Resistor-10K (1)
3. Capacitor 4.7μf -1
4. IN4007 diode -1
5. Resistor 1M Ω -1
6. TRPS
7. Function Generator
8. Bread board and connecting wires
9. CRO with CRO probes.

Circuit diagram:

Negative clipper:
R=10KΩ

Positive clipper:
R=10KΩ

69
Two level clipper:
=10KΩ

Circuit operation:

Clippers are used to select a part of signal waveform above or below a reference
voltage for transmission.
Negative Clipper:
For Vi < VR +Vr , The diode D is OFF ,since it is reverse biased and hence does not contact.
Since no current flows, there is no voltage drop across R.
VO = Vi for Vi < VR + Vr Where Vr is Cut-in voltage of the diode.For Vi > VR + Vr , the
diode D is ON, Since it is forward biased and the potential barrier is overcome Vo = VR+ Vr

Transfer characteristic Equation:

Vo= Vi for Vi < VR + Vr
Vo= VR + Vr for Vi > VR + Vr
Positive Clipper:

When Vi > VR + Vr the diode is forward biased and hence it conducts since it is ON it is short
circuited . It is obvious that Vo= VR + Vr Whatever the comment. When Vi < VR + Vr the
diode is reverse biased and hence it is OFF. It acts as an open Circuit. Vo= Vi

Transfer Characteristic Equation:

Vo= Vi for Vi < VR + Vr; Vo= VR + Vr for Vi > VR + Vr

70
Model Graphs:
Negative clipper:

ositive clipper:

Two level clipper:

Procedure:

Clippers:
1. Connections are made as per the circuit diagram
2. For the positive clipper the diode is connected along with reference voltage as shown by
applying the input and the output is observed on the C.R.O.
3. For the negative clipper the directions of diode and the reference voltage are reversed and by
giving the input, the output is observed on the C.R.O.
4. For the Slicer Circuit has two Diodes along with reference voltages are connected as
shown and output is observed on the C.R.O.
5. A sinusoidal input 10V (p-p) 1KHZ is given to positive clipper, negative clipper and slicer
circuit and corresponding output is observed.

71
Observation table:

Clippers:

Negative Clipper Positive Clipper 2-Level

Name Of the Clipper
Clipper

Wave Form I/P O/P I/P O/P I/P O/P

Amplitude (p-p)
in volts
Time Period(mSec)

Precautions:
1. Loose and wrong connections are to be avoided.
2. The output waveforms should be obtained without distortion.
3. Parallax error should be avoided

RESULT
The output wave forms of diode clippers are plotted.
Viva questions
6. What is meant by non linear wave shaping?
7. What is clipper? What are the different types of clippers?
8. What are the different applications of clipper?
9. What is two level clipper
10. Explain the operation of positive and negative clipper?

72
 5. CLAMPING CIRCUITS

Objective:

To observe the waveforms of the Positive and Negative clamping circuits.

Apparatus:
1. 1N 4007 diode
2. Capacitor 4.7μf -1
3. IN4007 diode -1
4. Resistor 1M Ω -1
5. TRPS
6. Function Generator
7. Bread board and connecting wires
8. CRO with CRO probes.

Circuit diagram:
Negative Clamper:
Negative Clamper

C
+ -

10V +
1N4007 R
Vo (CRO)
(P-P) Vi
-
1KHz

C=4.7μf , R=1M Ω
Positive Clamper
Positive Clamper

- C +

10V +
1N4007 R
Vo (CRO)
(P-P) Vi
-
1KHz

C=4.7μf , R=1M Ω

73
Theory:
A Clamper Circuit is a circuit that adds a DC level to an AC signal. Actually, the positive and negative
peaks of the signals can be placed at desired levels using the clamping circuits. As the DC level gets
shifted, a clamper circuit is called as a Level Shifter.
Clamper circuits consist of energy storage elements like capacitors. A simple clamper circuit comprises
of a capacitor, a diode, a resistor and a dc battery if required.
Clamper Circuit
A Clamper circuit can be defined as the circuit that consists of a diode, a resistor and a capacitor that
shifts the waveform to a desired DC level without changing the actual appearance of the applied signal.
In order to maintain the time period of the wave form, the tau must be greater than, half the time
period dischargingtimeofthecapacitorshouldbeslow.dischargingtimeofthecapacitorshouldbeslow.

τ=Rc
Where

 R is the resistance of the resistor employed

 C is the capacitance of the capacitor used
The time constant of charge and discharge of the capacitor determines the output of a clamper circuit.
 In a clamper circuit, a vertical shift of upward or downward takes place in the output waveform
with respect to the input signal.
 The load resistor and the capacitor affect the waveform. So, the discharging time of the capacitor
should be large enough.
The DC component present in the input is rejected when a capacitor coupled network is
used asacapacitorblocksdcasacapacitorblocksdc. Hence when dc needs to be restored, clamping circuit is
used.

Types of Clampers:
There are few types of clamper circuits, such as

 Positive Clamper
 Positive clamper with positive Vr
 Positive clamper with negative Vr
 Negative Clamper
 Negative clamper with positive Vr
 Negative clamper with negative Vr

Positive Clamper Circuit

A Clamping circuit restores the DC level. When a negative peak of the signal is raised above to the zero
level, then the signal is said to be positively clamped.

74
A Positive Clamper circuit is one that consists of a diode, a resistor and a capacitor and that shifts the
output signal to the positive portion of the input signal. The figure below explains the construction of a
positive clamper circuit.

Initially when the input is given, the capacitor is not yet charged and the diode is reverse biased. The
output is not considered at this point of time. During the negative half cycle, at the peak value, the
capacitor gets charged with negative on one plate and positive on the other. The capacitor is now
charged to its peak value VmVm. The diode is forward biased and conducts heavily.
During the next positive half cycle, the capacitor is charged to positive Vm while the diode gets reverse
biased and gets open circuited. The output of the circuit at this moment will be
V0=Vi+VmV0=Vi+Vm
Hence the signal is positively clamped as shown in the above figure. The output signal changes
according to the changes in the input, but shifts the level according to the charge on the capacitor, as it
adds the input voltage.
Positive Clamper with Positive Vr
A Positive clamper circuit if biased with some positive reference voltage, that voltage will be added to
the output to raise the clamped level. Using this, the circuit of the positive clamper with positive
reference voltage is constructed as below.

During the positive half cycle, the reference voltage is applied through the diode at the output and as the
input voltage increases, the cathode voltage of the diode increase with respect to the anode voltage and
hence it stops conducting. During the negative half cycle, the diode gets forward biased and starts
conducting. The voltage across the capacitor and the reference voltage together maintain the output
voltage level.

75
Positive Clamper with Negative Vr
A Positive clamper circuit if biased with some negative reference voltage, that voltage will be added to
the output to raise the clamped level. Using this, the circuit of the positive clamper with positive
reference voltage is constructed as below.

During the positive half cycle, the voltage across the capacitor and the reference voltage together
maintain the output voltage level. During the negative half-cycle, the diode conducts when the cathode
voltage gets less than the anode voltage. These changes make the output voltage as shown in the above
figure.
Negative Clamper
A Negative Clamper circuit is one that consists of a diode, a resistor and a capacitor and that shifts the
output signal to the negative portion of the input signal. The figure below explains the construction of a
negative clamper circuit.

During the positive half cycle, the capacitor gets charged to its peak value vmvm. The diode is forward
biased and conducts. During the negative half cycle, the diode gets reverse biased and gets open
circuited. The output of the circuit at this moment will be
V0=Vi+VmV0=Vi+Vm
Hence the signal is negatively clamped as shown in the above figure. The output signal changes
according to the changes in the input, but shifts the level according to the charge on the capacitor, as it
adds the input voltage.

76
Negative clamper with positive Vr
A Negative clamper circuit if biased with some positive reference voltage, that voltage will be added to
the output to raise the clamped level. Using this, the circuit of the negative clamper with positive
reference voltage is constructed as below.

Though the output voltage is negatively clamped, a portion of the output waveform is raised to the
positive level, as the applied reference voltage is positive. During the positive half-cycle, the diode
conducts, but the output equals the positive reference voltage applied. During the negative half cycle, the
diode acts as open circuited and the voltage across the capacitor forms the output.
Negative Clamper with Negative Vr
A Negative clamper circuit if biased with some negative reference voltage, that voltage will be added to
the output to raise the clamped level. Using this, the circuit of the negative clamper with negative
reference voltage is constructed as below.

The cathode of the diode is connected with a negative reference voltage, which is less than that of zero
and the anode voltage. Hence the diode starts conducting during positive half cycle, before the zero
voltage level. During the negative half cycle, the voltage across the capacitor appears at the output. Thus
the waveform is clamped towards the negative portion.

77
Model Graphs:
(A) Negative clamper: (B) Positive clamper:

Procedure:
Clampers:
1. The circuits are connected as per the circuit diagram.
2. The input signal Vi of (10V p-p) frequency (1KHz) is applied to each of the circuits.
3. The corresponding output waveforms are noted from the C.R.O.
4. The input and output waveform are plotted on the graph sheets.

Observation table:
Name Of the Clamper Negative Clamper Positive Clamper

Wave Form I/P O/P I/P O/P

Amplitude (p-p)

Time Period

Precautions:
1. Loose and wrong connections are to be avoided.
2. The output waveforms should be obtained without distortion.
3. Parallax error should be avoided
RESULT
The output wave forms of diode clampers are plotted.
Viva questions
1. What is meant by non linear wave shaping?
2. What do mean by clamper?
3. What are the different types of clamping circuits?
4. What are the different applications of clampers?
5. Why clamper is called DC inserter?
6. Explain the operation of positive clamper and negative clamper?

78
 Exp-6 Transistor as a Switch

Objective: To verify the switching action of a transistor and to measure the cut off and saturation voltages.
Apparatus:
1. (0-30) V TRPS -2no.s,
2. 100K, 2.2K,100Ω,4.7K resistors -1no. (each),
3. (0-2) V & (0-20) V Voltmeters -1no. (each),
5. BC 107 transistor -1no.,
6. Bread Board,
7. Connecting wires.
Circuit diagram:

Observation Table:

Q1 Q2 LED1 LED2
VCE(SAT) VCB(SAT) VBE(SAT) VCE(cutoff) VCB(cutoff) VBE(cutoff) ON/OFF ON/OFF ON/OFF ON/OFF

Procedure:
1. Connections are made as per the circuit diagram.Vce(cutoff).
2. Set Vi=0V,Measure VCE,VCB,VBE cutoff voltages.
3. Observe the glow of LED.
4. Set Vi=5v,measure VCE,VCB,VBE Saturation voltages.LED doesn’t glow

79
Precautions:
1. Connections must be made carefully to avoid short circuit.
2. Readings must be taken without parallel ox error.
3. The readings should not exceed the meter range.

Result: Switching Action of a Transistor is verified

Viva Questions:
1. What are the Modes of Operation of BJT
2. Is BJT is a current controlled device or voltage controlled device?
3. Why phase shift occurs in BJT?
4. What is D.C. Load line?
5. How does a transistor acts as a switch?

80
 Exp-7 Linear wave shaping

Objective: To observe the process of linear wave shaping for square wave input for high pass RC circuit and low
pass RC circuit.
Apparatus :
1. Resistors – 1KΩ (1) & 10KΩ (1)
2. Capacitors –
3. Function Generator
4. TRPS
5. CRO & CRO probes
6. Bread Board and connecting wires.

Circuit Diagram:
High Pass RC Circuit
C
+ +

10V (P-P) Vi R Vo
Square wave

- -
R=10KΩ,C=1µf
Low Pass RC Circuit
R
+ +

10V (P-P) Vi C Vo
Square wave

- -
R=1KΩ,C=0.01µf

High pass RC Circuit:

The reactance of a capacitor decreases with increasing frequency; the higher frequency
components in input signal appear at the output with less attenuation than do the lower frequency components. At
very high frequency the capacitor acts almost as a short circuit and virtually all the input appears at the output. This
behavior accounts for the designation ‘High Pass Filter ‘.
Square wave responses of a high pass RC circuit. The dashed curve represents the output if RC >> T.
V11 = V1 exp(-T1/ RC) V11- V2 = V
1
V2 = V2 exp(-T2/ RC) V1 - V21 = V
A symmetrical square wave is one for which T 1 = T2 = T/2. Because of symmetry V1 = - V2 and V11= -V21

81
 V1 = V / (1+exp-T / 2RC) V11 = V / (1+exp T / 2RC)
Peaking of square wave resulting from a time constant small compared with T.
The high pass RC circuit acts as a differentiator if time constant is very small in comparisons with the time required
for the input signal to make an appreciable change.
Low Pass R-C Circuit :
The low pass RC circuit passes low frequencies readily but attenuates high frequencies because the reactance of
capacitor decreases with increasing frequency. At high frequencies, the capacitor acts as a virtual short circuit and
output falls to zero. Square wave input (b-d) , output of low pass RC circuit. The time constant is smallest for (b)
and largest for (d).
Equation of rising portion :
V 01 = V 1 + ( V1 - V 1 ) exp (-t / RC)
V1 = initial value of output voltage .
Equation of falling portion :
V02 = V 11 + ( V2 - V11) exp - ( t – T1)/ RC
The low pass RC circuit acts as an integrator if time constant is very large in comparison with time required for the
input signal to make an appreciable change.

Procedure:
1. Connections are made as per the circuit diagram.
2. To the high pass circuit a square wave input of amplitude 10V(p-p) is given.
3. The time period of waveform is adjusted such that RC << T, RC = T and RC >> T to get spikes and
tilted output respectively. The time period and amplitude are noted.
4. Now to the low pass circuit a square wave input of amplitude 10V (p-p) is given.
5. The time period of input signal is adjusted with the help of a function generator such that RC << T and
RC >> T to get the corresponding waveforms. The time period and amplitude are noted.
6. Graphs are plotted for both input and output waveforms of both the circuits when RC << T and RC >> T

Observation Table:

High Pass RC Circuit Low Pass RC Circuit

RC >> T RC==T RC<<T RC >> T RC==T RC<<T

Theoretical
Calculations

Practical
Calculations

82
Model graphs:
High pass circuit

83
Low Pass Circuit

Precautions:
1. Loose and wrong connections are to be avoided.
2. The output waveforms should be obtained without and distortion
3. Parallax error should be avoided.

Result:
Output wave forms of Linear wave shaping circuits are plotted.
Viva questions:
7. What is linear wave shaping?
8. How low pass RC circuit works as an integrator?
9. How low pass RC circuit works as differentiator?
10. Define time constant?
11. Define tilt?
12. Explain the output wave forms of high pass and low pass circuit for different conditions.

84
 Exp-8 Common Emitter Configuration
Objective : To plot the input and output characteristics of a transistor in CE Configuration and to
compute the h – parameters.
Apparatus
S.No Apparatus Type Range Quantity

01 Transistor BC107 01

02 Resistance 300KΩ,1KΩ 01

03 Regulated Power supply (0-30V) 01

04 Ammeter (0-100mA),(0-100µA) 01

05 Voltmeter (0-2V),(0-20V) 01

06 Breadboard and Wires

Theory:

Bipolar junction transistor (BJT) is a 3 terminal (emitter, base, collector) semiconductor device.
There are two types of transistors namely NPN and PNP. It consists of two P-N junctions namely
emitter junction and collector junction.

In Common Emitter configuration the input is applied between base and emitter and the output is
taken from collector and emitter. Here emitter is common to both input and output and hence the
name common emitter configuration.

Input characteristics are obtained between the input current and input voltage taking output
voltage as parameter. It is plotted between VBE and IB at constant VCE in CE configuration.

Output characteristics are obtained between the output voltage and output current taking input
current as parameter. It is plotted between VCE and IC at constant IB in CE configuration.

85
PIN Assingnment

Circuit Diagram
(0-50)mA 1 K
- +
A
C
300 K (0-100)uA
+ - B
A BC107
+
(0-30)V + VCE +
+ (0-20)V - VCC
V VBE
E

VBB - - - (0-30)V
(0-2)V

Precautions:
1. While doing the experiment do not exceed the ratings of the transistor. This may lead to
damage the transistor.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as per
the circuit diagram.
4. Make sure while selecting the emitter, base and collector terminals of the transistor.

Procedure:
Input Characteristics

1. Connect the transistor in CE configuration as per circuit diagram

2. Keep output voltage VCE = 0V by varying VCC.
3. By varying VBB ,vary VBE in steps of 0.1V and note down base current IB .
4. Repeat above procedure (step 3) for various values of VCE (VCE=5V and VCE=10V)

86
5. Plot the input characteristics by taking VBE on X-axis and IB on Y-axis at constant VCE.

Output Characteristics

1. Make the connections as per circuit diagram.

2. By varying VBB keep the base current IB = 0μA.
3.By varying VCC , vary VCE in steps of 1V and note down the readings of collector-current (IC)
4. Repeat above procedure (step 3) for different values of IB
5.Plot the output characteristics by taking VCE on x-axis and IC on y-axis by taking IB as a
constant parameter.
Observation Table:
Input Characteristics

VCE= 0 V VCE= 5 V VCE = 10 V

VBE (V) IB (μA) VBE (V) IB (μA) VBE (V) IB (μA)

Output Characteristics

IB = 0 μA IB = 10 μA IB = 20 μA
VCE (V) IC (mA) VCE (V) IC (mA) VCE (V) IC (mA)

87
Model Graph

v
v v

Input characteristics

µA

µA

µA

µA

µA

Output characteristics
Calculations from graph:
Input characteristics
a) Input impedance(hie)= ΔVBE / ΔIB , VCE constant.
b) Reverse voltage gain(hre)= ΔVBE/Δ VCE , IB constant
Output characteristics
a) Output admittance(hoe)= ΔIc / Δ VCE , IB constant
b) Forward current gain(hfe)= ΔIc / ΔIB , VCE constant

88
Result:

Thus the input and output characteristics of CE configuration is plotted.

a) Input impedance(hie)=
b) Forward current gain(hfe)=
c) Output admittance(hoe)=
d) Reverse voltage gain(hre)=

VIVA QUESTIONS:

1. Why CE configuration is most widely used?

2. Draw the equivalent Circuit of C.E
3. What is the Current Gain,voltage gain,i/p and o/p impedance in CE?.
4. Relation between ‘’ and ‘’ and γ
5. Give the condition to operate the given Transistor in active,saturation &Cut-off Regions
6. What is Emitter Efficiency?

89
 Exp-9 Common Base Configuration
Objective : To plot the input and output characteristics of a transistor in CB Configuration and
to compute the h – parameters.
Apparatus
S.No Apparatus Type Range Quantity

01 Transistor BC107 01

02 Resistance 1KΩ 02

03 Regulated Power supply (0-30V) 02

04 Ammeter (0-100mA) 02

05 Voltmeter (0-2V),(0-20V) 01

06 Breadboard and Wires

Theory:

Bipolar junction transistor (BJT) is a 3 terminal (emitter, base, collector) semiconductor device.
There are two types of transistors namely NPN and PNP. It consists of two P-N junctions namely
emitter junction and collector junction. In Common Base configuration the input is applied
between emitter and base and the output is taken from collector and base. Here base is common
to both input and output and hence the name common base configuration. Input characteristics
are obtained between the input current and input voltage taking output voltage as parameter. It is
plotted between VEB and IE at constant VCB in CB configuration. Output characteristics are
obtained between the output voltage and output current taking input current as parameter. It is
plotted between VCB and IC at constant IE in CB configuration.

90
PIN Assingnment

Circuit Diagram

(0-100)mA 1K
- +
A
1K (0-50)mA C
- + BC107
A
E +
- V VCB +
- (0-20)V -
(0-30)V VCC
V VEB
B

+ (0-2)V + - (0-30)V
VEE

Precautions:
1. While doing the experiment do not exceed the ratings of the transistor. This may lead to
damage the transistor.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as per
the circuit diagram.
4. Make sure while selecting the emitter, base and collector terminals of the transistor.
Procedure:
Input Characteristics

1. Connect the transistor in CB configuration as per circuit diagram

2. Keep output voltage VCB = 0V by varying VCC.
3. By varying VEE , vary VEB in steps of 0.1V and note down emitter current IE.
4. Repeat above procedure (step 3) for various values of VCB (VCB=5V and VCB=10V)

91
Output Characteristics

1. Make the connections as per circuit diagram.

2. By varying VEE keep the base current IE =10mA.
3.By varying VCC ,vary VCB in steps of 1V and note down the readings of collector-current (IC).
4. Repeat above procedure (step 3) for different values of IE (IE=15mA & IE=20mA)
Observation Table:
Input Characteristics
VCB = 10 V
VCB= 0 V VCB= 5V
IE (mA)
VEB (V) IE(mA) VEB (V) IE (mA) VEB (V)

Output Characteristics
IE = 20 mA
IE = 10 mA IE = 15 mA
IC (mA)
VCB (V) IC (mA) VCB (V) IC (mA) VCB (V)

92
Model Graph

mA

mA

mA

Input characteristics Output characteristics

Calculations from the Graph

Input characteristics
a) Input impedance(hib)= ΔVEB / ΔIE , VCB constant.
b) Reverse voltage gain(hrb)= ΔVEB/Δ VCB , IE constant
Output characteristics
a) Output admittance(hob)= ΔIc / Δ VCB , IE constant
b) Forward current gain(hfb)= ΔIc / ΔIE , VCB constant

Result:
Thus the input and output characteristics of CB configuration are plotted and h parameters are
found.
a) Input impedance(hib)=
b) Forward current gain(hfb)=
c) Output admittance(hob)=
d) Reverse voltage gain(hrb)=

93
Viva questions:

1. What is Early effect?

2. Draw the small signal model of BJT Common Base Configuration.
3. What is Reach –Through effect?
4. What are the applications of Common Base.
5. What will be the parameters of CB.
6. Explain the Transistor operation?

94
 Exp-10 Drain and transfer characteristics of JFET
Objective
1.To study Drain characteristics and Transfer characteristics
2.To find the Transconductance ,Drain resistance and Amplification factor
Apparatus
S.No Apparatus Type Range Quantity

01 JFET BFW10 01

02 Resistance 1KΩ 01

03 Regulated Power supply (0-30V) 01

04 Ammeter (0-100mA) 01

05 Voltmeter (0-10V),(0-20V) 01

06 Breadboard and Wires

Theory:

The field effect transistor (FET) is made of a bar of N type material called the SUBSTRATE
with a P type junction (the gate) diffused into it. With a positive voltage on the drain, with
respect to the source, electron current flows from source to drain through the CHANNEL.
If the gate is made negative with respect to the source, an electrostatic field is created which
squeezes the channel and reduces the current. If the gate voltage is high enough the channel will

95
be "pinched off" and the current will be zero. The FET is voltage controlled, unlike the transistor
which is current controlled. This device is sometimes called the junction FET or IGFET or JFET.

If the FET is accidentally forward biased, gate current will flow and the FET will be destroyed.
To avoid this, an extremely thin insulating layer of silicon oxide is placed between the gate and
the channel and the device is then known as an insulated gate FET, or IGFET or metal oxide
semiconductor FET (MOSFET)
Drain characteristics are obtained between the drain to source voltage (VDS) and drain current
(ID) taking gate to source voltage (VGS) as the parameter. Transfer characteristics are obtained
between the gate to source voltage (VGS) and Drain current (ID) taking drain to source voltage
(VDS) as parameter
Circuit Diagram

(0-50mA)
- A + 1K
D
G
BFW 10
- S +
+
VGG - VDD
+ (0-20V) VDS - (0-30V)
VGS (0-10V)
(0-30V)
-
+

Pin assignment of FET:

96
Precautions:

1. While doing the experiment do not exceed the ratings of the FET. This may lead to damage
the FET.
2. Connect voltmeter and Ammeter in correct polarities as shown in the Circuit diagram.
3. Do not switch ON the power supply unless you have checked the Circuit connections as per
the circuit diagram.
4. Make sure while selecting the Source, Drain and Gate terminals of the FET.

Procedure:

Drain characteristics

1.By Varying VGG keep VGS = 0v.

2.By varying VDD , vary VDS in steps of 0.5V and note down corresponding ID
3.Repeat the above procedure for different values of VGS (i.e. VGS=-1V & VGS=-2V)
4.Plot its characteristics with respect to VDS versus ID

Transfer characteristics:

1.By Varying VDD keep VDS = 1v.

2.By varying VGG , vary VGS in steps of 0.5V and note down corresponding ID
3.Repeat the above procedure for different values of VDS (i.e. VDS=2V & VDS=3V)
4.Plot its characteristics with respect to VGS versus ID

97
Model Graph

Tabular column

Drain Characteristics

VGS = 0V VGS = -1V VGS = -2V

VDS(V) ID (mA) VDS (V) ID (mA) VDS (V) ID (mA)

Transfer Characteristics
VDS = 1V VDS = 3V VDS = 5V
VGS(V) ID (mA) VGS (V) ID (mA) VGS (V) ID (mA)

98
Graph (Instructions):

1. Plot the drain characteristics by taking VDS on X-axis and ID on Y-axis at constant VGS.
2. Plot the Transfer characteristics by taking VGS on X-axis and ID on Y-axis at constant VDS.
Calculations from graph:
Drain characteristics
Drain resistance is given by the ration of small change in drain to source voltage (ΔVDS) to the
corresponding change in Drain current (ΔID) for a constant gate to source voltage (VGS), when
the JFET is operating in pinch-off or saturation region.

VDS
Drain resistance (rd ) = (Ω) at constant VGS
I D

Transfer characteristics
Ratio of small change in drain current (ΔID) to the corresponding change in gate to source
voltage (ΔVGS) for a constant VDS. gm = ΔID / ΔVGS at constant VDS . (from transfer
characteristics) The value of gm is expressed in mho’s or siemens (s).

 I D
Mutual conductance (gm) =
VGS
Amplification Factor (μ) :

It is given by the ratio of small change in drain to source voltage (ΔVDS) to the corresponding
change in gate to source voltage (ΔVGS) for a constant drain current.
μ = ΔVDS / ΔVGS.
μ = (ΔVDS / ΔID) X (ΔID / ΔVGS)
μ = rd X gm.

Result
Drain resistance (rd ) =
Mutual conductance (gm) =
Amplification factor(µ)=

99
Viva Questions:
1 .What is meant by Field Effect Transistor?
2. What is meant by Uniploar and bipolar?
3. What is the difference between BJT and FET?
4. What are the characteristics of FET
5. What is Pinch Off Voltage?
6. Why FET is called Voltage controlled Device?
7. Draw Small Signal model of FET.
8. What are the advantages of FET?

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 Exp-11 TWO STAGE R-C COUPLED AMPLIFIER
Objective:
1. To observe the frequency response of RC coupled amplifier and to find the bandwidth of the amplifier.
2. To observe that the total voltage gain is equal to the product of the individual gains.

Apparatus:
Power supply 0-30V 1No.
CRO 20MHz 1No.
Signal generator 1-1MHz 1 No
Resistors 1kΩ, 4.7k, 8.2k, 33k 2 No
and other designed values. 2.2k 1 No
Capacitors 10µF 3 No,
100µF 1 No
Transistors BC107 2 No

Circuit Diagram:

Fig: Single stage CE amplifier

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Procedure:
1. Connect the circuit as shown in the figure.
2. A 10V DC supply is given to the circuit and a certain amplitude of input signal is kept constant using
signal generator.
3. Measure the output voltage for both single stage and multi stage amplifier using CRO.
4. Calculate total voltage gain and also individual voltage gain.
5. Now, by varying the input frequency note the output voltages from CRO and calculate the gain.

Tabular Form: Vin= 20 mV

Single Stage Frequency Response:
Voltage
INPUT FREQUENCY O/P Voltage(Vo) Gain in dB =
gain
(Hz) (V) 20 log AV
AV=Vo/Vi
100
200
300
500
700
1k
2k
3k
5k
7k
10k
20k
30k
50k
70k
100k
200k
300k
500k
700k
1M

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Multi Stage Frequency Response: Vin=20mV
Voltage
INPUT FREQUENCY O/P Voltage(Vof) Gain in dB =
gain
(Hz) (V) 20 log AVf
AVf=Vof/Vi
100
200
300
500
700
1k
2k
3k
5k
7k
10k
20k
30k
50k
70k
100k
200k
300k
500k
700k
1M

Model graphs:

Fig: Frequency response of Single stage

Gain in

}-3dB
dB

Fig: Frequency response of multi stage amplifier

Calculations:
fL Bandwidth = fH - fL fH
I/P Voltage Vin = Frequency in Hz
O/P Voltage Vo2 =
O/P Voltage Vo1=
Vo1
Ist Stage voltage gain= 
Vin

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 Vo 2
IInd Stage voltage gain 
Vo1
Vo2
Overall voltage gain 
Vin
Bandwidth = fh – fl =
Graph :
A graph is plotted between gain (dB) and frequency (Hz) for both single stage and multi stage amplifiers.
Precautions:
1. Connections must be made with proper polarity.
2. Avoid loose and wrong connections.
Result:
The frequency response characteristics of two stage RC coupled Amplifier is obtained and total voltage gain is
equal to the product of the individual gains.
Viva- questions:
1. what are half power points in the frequency response of an amplifier?
A. Low frequency component FL and high frequency component FH
2. What is the effect of coupling capacitor on output of amplifier.
A. The gain increases with increase in frequency
3. Define cascading of amplifier
A. A cascade amplifier is any amplifier constructed from a series of amplifiers, where each amplifier sends its
output to the input of the next amplifier

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 Exp-12 Bistable Multivibrator

Objectives: To observe the operation of fixed bias binary.

Apparatus:
1) Transistors BC 107 –2
2) Resistors 100KΩ –2
2.2KΩ -2
15kΩ -2
3) Light emitting diodes -2
4) Regulated power supply-1
5) Bread board and connecting wires

Design of a bistable multivibrator:

For the given Vcc, VBB, hfe (min), Ic (sat) it is possible to compute the values of Rc1, R1 and R2. The following
assumptions are made in order to design the bistable fixed bias multivibrator.
1. If Q1 and Q2 are identical silicon transistors, the junction voltages are assumed as V CE (sat) = 0.3 V and VBE
(sat) = 0.7 V.
2. The base current of the ON transistor is taken as 1.5 times of the minimum value of base current.
IB = 1.5 IB (min) Where IB (min) = Ic (sat) / hfe (min)
3. The current through R2 of the ON transistor is taken as one tenth of IC. If Q2 ON, I4 =IC2/10.
4 The current through R1 is ignored since it is quite small in comparison with the collector current of ON
transistor.

To find RC:
RC=VCC-VD/I2=VCC –VCE (sat)/IC (sat)
RC1=RC2
To find R2:
The current though R2 is I4, where I4=IC2/10=IC(sat)/10.
R2=[VB- (-VBB)]/I4

To find R1:

The current through R1 is I’

I’=IB2+I4
IB2=1.5 IB(min)
Where IB(min)=IC(sat)/hfe(min).
I1=I’
I1=VCC-VB/RC1+R1
R1=[VCC-VBE(SAT)/I1]-RC1

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 Circuit diagram:
+VCC(+15v)

2.2k 2.2k
15k 15k
C D

LED1 LED2

3 A B 3
BC107 2 2 BC107
Q1 1 1 Q2
1 1

-VBB(-15v)

Procedure:
1. The connections are made as per the circuit diagram.
2. The supply is switched on and it is observed that one LED is ON whereas the other is OFF.
3. Now the base voltages of both the transistors VB1 and VB2 and collector voltages VC1 and VC2 are noted.
4. A negative trigger is given at the base of the ON transistor to change the states of the transistors.
5. In this steady state the base voltages of both the transistors V B1 and VB2 and also the collector voltages VC1 and
VC2 are noted.
Precautions:
1. Loose and wrong connections should be avoided.
2. Parallax error should be avoided.

Result:
Working of Bistable Multivibrator circuit is verified.
Viva questions
1. What is stable state?
2. Name the types of multivibrators?
3. What is quasi stable state?
4. How many stable states are there in binary?
5. What is the need of triggering
6. What are the types of triggering are there in multivibrator?

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