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High-Side Power Switch Ics Si-5151S: (With Diagnostic Function)

The document describes the SI-5151S high-side power switch IC with diagnostic functions. It has built-in protection from overcurrent, overheating, short circuits, open loads, and reverse power connections. It can directly drive loads from LS-TTL and CMOS logic levels. The IC comes in a TO220-equivalent full mold package and has maximum ratings of 40V for voltage, 1.8A for current, and 18W for power dissipation with a heat sink.

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0% found this document useful (0 votes)
354 views2 pages

High-Side Power Switch Ics Si-5151S: (With Diagnostic Function)

The document describes the SI-5151S high-side power switch IC with diagnostic functions. It has built-in protection from overcurrent, overheating, short circuits, open loads, and reverse power connections. It can directly drive loads from LS-TTL and CMOS logic levels. The IC comes in a TO220-equivalent full mold package and has maximum ratings of 40V for voltage, 1.8A for current, and 18W for power dissipation with a heat sink.

Uploaded by

aminbutet
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

High-side Power Switch ICs [With Diagnostic Function] SI-5151S

Features External Dimensions (unit: mm)


● Built-in diagnostic function to detect short and open circuiting of loads and 4.2 ±0.2
3.2 ±0.2
output status signals 10 ±0.2 2.8 ±0.2
● Low saturation PNP transistor use
● Allows direct driving using LS-TTL and C-MOS logic levels

4 ±0.2

7.9 ±0.2
● Built-in overcurrent and thermal protection circuits
● Built-in protection against reverse connection of power supply

16.9 ±0.3

20 max
● TO220 equivalent full-mold package not require insulation mica 2.6 ±0.1

a
b

2.9 –0.3
+0.2
Absolute Maximum Ratings (Ta=25ºC) 0.94 ±0.15
R-end
Parameter Symbol Ratings Unit Conditions

Power supply voltage VB 40 V +0.2

3.6 ±0.5
+0.2
0.85 –0.1 0.45 –0.1
Input terminal voltage VIN –0.3 to VB V P1.7 ±0.1 • 4 = 6.8 4 ±0.6

DIAG terminal voltage VDIAG 6 V

Collector-emitter voltage VCE 40 V 1. GND a: Part No.


2. VIN b: Lot No.
Output current IO 1.8 A 3. VO
4. DIAG
PD1 18 W With infinite heatsink (Tc = 25ºC) 5. VB
Power Dissipation
Stand-alone without heatsink (Forming No. 1123)
PD2 1.5 W
(Tc = 25ºC)

Junction temperature Tj –40 to +125 ºC

Operating temperature TOP –40 to +100 ºC

Storage temperature Tstg –40 to +125 ºC


Standard Circuit Diagram
VB
5
Electrical Characteristics (Ta=25ºC unless otherwise specified) VO PZ

Parameter Symbol
Ratings
Unit Conditions
SI-5151S 3
VCC
min typ max VIN 2
DIAG
Operating power supply voltage VBopr 6.0 30 V
4 5.1kΩ
Quiescent circuit current Iq 5 12 mA VBopr = 14V, VIN = 0V LS-TTL
or 1

Load
0.5 V IO 1.0A, VBopr = 6 to 16V CMOS
Saturation voltage of output
VCE (sat)
transistor 1.0 V IO 1.8A, VBopr = 6 to 16V

Output leak current IO, leak 2 mA VCEO = 16V GND


Truth table
Output ON VIH 2.0 VB V VBopr = 6 to 16V VIN VO
Input voltage
Output OFF VIL –0.3 0.8 V VBopr = 6 to 16V H H
L L
Output ON I IH 1 mA VIN = 5V
Input current
Output OFF I IL –0.1 mA VIN = 0V

Overcurrent protection starting


IS 1.9 A VBopr = 14V, VO = VBopr –1.5V
current

Thermal protection starting


Diagnostic Function
TTSD 125 145 ºC
temperature

Open load detection resistor Ropen 30 kΩ VBopr = 6 to 16V


Normal Open load Shorted load Overheat Normal
TON 8 30 µs VBopr = 14V, IO = 1A
Output transfer time VIN
TOFF 15 30 µs VBopr = 14V, IO = 1A

VDH 4.5 6 V VCC = 6V VO


DIAG output voltage
VDL 0.3 V VCC = 6V, IDD = 2mA

TPLH 30 µs VBopr = 14V, IO = 1A DIAG


DIAG output transfer time
TPHL 30 µs VBopr = 14V, IO = 1A

Minimum load inductance L 1 mH


Mode VIN VO DIAG
Note: L L L
Normal H H H
* The rule of protection against reverse connection of power supply is VB = –13V, one minute L H H
Open load H H H
(all terminals except, VB and GND, are open).
L L L
Shorted load H L L
L L L
Overheat H L L
● DIAG output will be undetermined when a voltage
exceeding 25V is applied to VB terminal.

16

This datasheet has been downloaded from http://www.digchip.com at this page


SI-5151S

Electrical Characteristics

■ Quiescent Circuit Current ■ Circuit Current ■ Saturation Voltage of Output Transistor


10 40 1.0

Ta = --40ºC

30 V B=
Ta = 25ºC 6 to 16V

VCE (sat) (V)


--40ºC

IB (mA)
Iq (mA)

25ºC 95ºC
5 95ºC 20 Ta = 95ºC 0.5

--40ºC
10
25ºC

0 0 0
0 10 20 30 40 0 10 20 30 40 50 0 1 2 3

VB (V) VB (V) IO (A)

■ Overcurrent Protection Characteristics (Ta= –40ºC) ■ Overcurrent Protection Characteristics (Ta=25ºC) ■ Overcurrent Protection Characteristics (Ta=100ºC)
16 16 16

14 14 14
VB = VB =
12 VB = 12
14V 12 14V
14V
10 10 10
VO (V)

VO (V)

VO (V)
8 8 8

6 6 6

4 4 4

2 2 2

0 0 0
0 1 2 3 0 1 2 3 0 1 2 3

IO (A) IO (A) IO (A)

■ Threshold input voltage ■ Input Current (Output ON) ■ Input Current (Output OFF)
20 1.0 2
VIN = 5V VIN = 0V
Ta = VB = 14V
VB = 14V
95ºC 25ºC –40ºC
15 VB = 16V
I O = 1A
IIH (mA)

IIL (µA)
VO (V)

10 0.5 1

0 0 0
0 1 2 2.2 –40 0 50 100 –40 0 50 100
VIN (V) Ta (ºC) Ta (ºC)

■ Saturation Voltage of DIAG Output ■ Thermal Protection Characteristics


0.2 16
VB = 14V Vo
14
DIAG
12 6

VB = 14V
VDG (sat) (V)

10 5
DIAG (V)

IO = 10mA
VO (V)

0.1 8 4

6 3

4 2

2 1

0 0
–40 0 50 100 0 50 100 150

Ta (ºC) Ta (ºC)

17

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