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Moduł Ipm Skiip83ac12it1 1200V Semikron Datasheet

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0% found this document useful (0 votes)
403 views2 pages

Moduł Ipm Skiip83ac12it1 1200V Semikron Datasheet

Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Absolute Maximum Ratings MiniSKiiP 8

Symbol Conditions 1) Values Units SK integrated


VCES 1200 V intelligent Power
VGES ± 20 V SKiiP 83 AC 12
IC Theatsink = 25 / 80°C 120 / 90 A SKiiP 83 AC 12 I 3)
ICM tp < 1 ms; Theatsink = 25/80°C 240 / 180 A
Tj – 55 . . .+ 150 °C IGBT
Tstg – 55 . . .+ 125 °C 3-phase bridge inverter
Visol AC, 1 min. 2600 V Preliminary Data
Inverse Diode Case M8
IF=–IC Theatsink = 25 / 80°C 100 / 75 A
IFM=–ICM tp < 1 ms; Theatsink = 25/80°C 240 / 180 A
IFSM tp = 10 ms; sin., Tj = 25 °C 720 A
I2t tp = 10 ms; sin., Tj = 25 °C 2600 A2s

Characteristics
Symbol Conditions 1) min. typ. max. Units
IGBT - Inverter
VCEsat IC = 90 A  Tj = 25 (125) °C  – 2,5(3,1) 3,0(3,7) V

VCEsat IC = 120 A  Tj = 25 (125) °C  – 2,9(3,7) – V
td(on) VCC = 600 V; VGE = 15 V – 44 100 ns

tr  IC = 90A;Tj = 125 °C – 70 140 ns
 R
td(off)  gon = Rgoff =15 Ω – 450 600 ns
tf  inductive load – 70 100 ns

Eon + Eoff  – 18 – mJ
Cies VCE = 25 V; VGE = 0 V, 1MHz – 6,6 – nF
Rthjh per IGBT – – 0,25 K/W
Diode 2) - Inverter
VF = VEC IF = 70 A  Tj = 25 (125) °C  – 2,0(1,8)2,5(2,3) V
 
IF = 90 A  Tj = 25 (125) °C  – 2,2(2,0) – V Features
VTO Tj = 125 °C – 1,0 1,2 V • High level power integration
rT Tj = 125 °C – 11 15 mΩ • Two-screws-mounting to the cu-
IRRM  IF = 75 A, VR = - 600 V – 40 – A stomer heatsink, compact de-
Qrr  diF/dt = - 800 A/µs – 9,5 – µC sign
 • Low thermal impedance due to
Eoff VGE = 0 V, Tj = 125 °C – 3 – mJ
Rthjh per diode – – 0,8 K/W durable ceramic insulation
Current sensor for three phase output ac current • Pressure contact technology
Ip RMS Continuous current , with simple connection to DCB
T = 100 °C, Vsuppl = ± 15V – 50 – A through pressure contact (no
Ipmax RMS t ≤ 2 s – – 80 A soldering) and with increased
Ip peak t ≤ 10 µs – 1000 – A power cycling capability
Rout terminating resistance – 50 – Ω • Low stray inductance
• High power density, low losses
Is RMS rated sensor current
• Integrated temperature sensor
at Ip = 50 ARMS 25 mA
• Three integrated compensated
Ip : Is transfer ratio 1 : 2000
current sensors for the ac cur-
Offset error Ip = 0 A, T = -40 ... 100 °C – ± 0,2 – mA
rent (SKiiP 83 AC 12 I)
Linearity – 0,1 – %
• Mechanical drawing available
delay time Ip = 10 % - 80 % – <1 – µs
on disc for Auto CAD 12
90 % - 20 % – <1 – µs
(.DWG, .DXF)
Bandwith 0 - 100 (-3dB) kHz
Temperature Sensor 1)
Theatsink = 25 °C, unless
RTS T = 25/100 °C 1000 / 1670 Ω otherwise specified
2)
Mechanical Data CAL = Controlled Axial Lifetime
M1 case to heatsink, SI Units 3 – 4 Nm Technology (soft and fast
Case M8 recovery)
3) With integrated current sensors
Available November 1996.

 by SEMIKRON 0796

C:\MARKETIN\DATENBL\minisk\83AC.CHP
B 7 – 12 0596  by SEMIKRON

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