DEPARTMENT OF

ELECTRICAL ENGINEERING

Transistor Equivalent Circuits and

h-Parameters

February 4, 2024

© Theraja, B. L., & Theraja, A. K. (2005). A textbook of electrical

technology. Ram Nagar, New Delhi: S. Chand & Company Ltd.
© Malvino, A. P. (2015). Electronic Principles. New York, United States:
McGraw-Hill US Higher Ed. USE Legacy.

Ony
angoS
.Obur
a 1/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Learning Outcomes

By the end of this class you should be able to:

1. Describe h-parameters.

2. Determine the forward and reverse parameters of a two

port network.

3. Analyse BJT amplifiers using h-parameters.

Ony
angoS
.Obur
a 2/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

What are h-parameters

These are four constants which describe the behaviour of a

two-port linear network.

A linear network is one in which resistance, inductances and

capacitances remain fixed when the voltage across them is
changed.

Consider an unknown linear network contained in the black box

shown in Figure 1

Ony
angoS
.Obur
a 3/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

As a matter of convention, currents flowing into the box are

taken positive whereas those flowing out of it are considered
negative.

Similarly, voltages are positive from the upper to the lower

terminals and negative the other way around.

Figure 1: An unknown linear network contained in a black box.

Ony
angoS
.Obur
a 4/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

The electrical behaviour of such a circuit can be described using

four hybrid parameters designated as h11 , h12 , h21 , h22 .

Note in this type of double-number subscripts, that it is implied

that the first variable is always divided by the other.

The subscript 1 refers to quantities on the input side and 2 to

the quantities on the output side.

Ony
angoS
.Obur
a 5/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

The letter ‘h’ has come from the word hybrid which means
mixture of distinctly different items.

These constants are hybrid ∵ they have different units.

Of the 4 h-parameters, 2 are found by short-circuiting the

output terminals and the other 2 by open-circuiting the input
terminals.

Ony
angoS
.Obur
a 6/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

(a) Finding h11 and h21 from short-circuit test

In Figure 2, the output terminals have been shorted so that

v2 = 0, because no voltage can exist on a short.

Figure 2: Finding h11 and h21 from short-circuit test.

Ony
angoS
.Obur
a 7/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

The linear circuit within the box is driven by an input voltage, v1 .

It produces an input current i1 whose magnitude depends on

the type of circuit within the box.
v1
h11 = output shorted
i1
i2
h21 = output shorted
i1
These two constants are known as forward parameters.

Ony
angoS
.Obur
a 8/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

▶ h11 represents input impedance with output shorted and

has the unit of ohm.

▶ h21 represents current gain of the circuit with output

shorted and has no unit.

Ony
angoS
.Obur
a 9/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

(b) Finding h12 and h22 from open-circuit test

As shown in Figure 3, the input terminals are open so that i1 = 0

but there does appear a voltage v1 across them.

Figure 3: Finding h12 and h22 from open-circuit test.

Ony
angoS
.Obur
a 10/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

The output terminals are driven by an ac voltage v2 which sets up

current i2 .
v1
h12 = input open
v2
i2
h22 = input open
v2
Generally, these two constants are also referred to as reverse
parameters.

Ony
angoS
.Obur
a 11/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

▶ h12 represents reverse voltage gain (not forward gain which

is v2 /v1 ). Hence, it has no units.

▶ h22 represents admittance and has the unit of mho or

Siemens, S.

It is the admittance looking into the output terminals

with input terminals open.

Ony
angoS
.Obur
a 12/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

The voltages and currents of such a two-port network are

related by the following set of equations.

v1 = h11 i1 + h12 v2 (1)

i2 = h21 i1 + h22 v2 (2)

Here, the hxx are constants for the given circuit but these
constants change if the circuit is changed.

Knowledge of the parameters enables us to find the voltages

and currents with the help of the above two equations.

Ony
angoS
.Obur
a 13/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Example 1

Find the h-parameters of the circuit shown in Figure 4.

Figure 4: A two-port linear network.

Ony
angoS
.Obur
a 14/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Solution

To find the forward parameters h11 and h21 , we short the output
terminals 2-2 as shown in Figure 5.

Figure 5: A two-port linear network.

Ony
angoS
.Obur
a 15/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

i). The input impedance of the network as viewed from input

terminals is
v1 Req i1
h11 = = = Req = 2 + 4||4 = 4Ω
i1 i1
ii). From Figure 5, the input current i1 divides into two equal
parts at point A.

The output current i2 = −i1 /2 (−ive sign is taken ∵ it is

actually flowing out of the box).

i2 −i1 /2 1
∴ h21 = = =−
i1 i1 2

Ony
angoS
.Obur
a 16/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

iii). To find h12 and h22 , we keep input terminals open and
apply v2 across output terminals as shown in Figure 6.

It will produce a current i2 which will produce equal drops

across the two 4Ω resistors. So that v2 = 8i2

Figure 6: A two-port linear network.

Ony
angoS
.Obur
a 17/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

The voltage which appears across input terminals as v1 is the

drop across the vertical 4Ω resistor connected at point A.

Hence, v1 = 4i2 = v2 /2.

v1 4i2 v2 /2 1
∴ h12 = = = =
v2 8i2 v2 2

The input impedance of the network when viewed from output

terminals with input terminals open is = 4 + 4 = 8Ω.
v2
i2 v2
∴ h22 = = 8 = = 1/8 = 0.125 Siemens (mho)
v2 v2 8v2

Ony
angoS
.Obur
a 18/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Hence, for the network in Figure 4, the h-parameters are

h11 = 4Ω
h21 = 0.5
h12 = 0.5
h22 = 0.125S

Ony
angoS
.Obur
a 19/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Input impedance of a two port network

Consider the two-port linear network in Figure 7 with a load

resistance rL across its output terminals.

The voltage source v1 on the input side drives the circuit and sets
up current i1 .

Figure 7: A two-port linear network with a load resistance rL across

its output terminals.

Ony
angoS
.Obur
a 20/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

As seen, Zin = v1 /i1 . Substituting the value of v1 from (1), we get

v1 h11 i1 + h12 v2
Zin = = (3)
i1 i1
h12 v2
= h11 + (4)
i1
From Figure 7,
v2
i2 = −
rL
The negative sign is used ∵ the actual load current is
opposite the shown direction.

Ony
angoS
.Obur
a 21/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Substituting the value of i2 in (2), we have;

−v2
i2 = = h21 i1 + h22 v2
rL

v2 −h21
= (5)
i1 (h22 + 1/rL )

Ony
angoS
.Obur
a 22/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Substituting this value in (1), we have

h12 v2
Zin = h11 +
i1
v2 −h21
But =
i1 (h22 + 1/RL )

And so

−h21 h21
Zin = h11 +
(h22 + 1/RL )

Ony
angoS
.Obur
a 23/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Voltage gain of a two port network

v2
The voltage gain of such a circuit (Figure 7) is Av = .
v1

Now v1 = i1 · Zin . Hence,

v2
Av =
i1 · Zin

Substituting the value of v2 /i1 as found in (5), we get

−h21
Av = (6)
Zin (h22 + 1/RL )

Ony
angoS
.Obur
a 24/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

The h-parameter notation for transistors

When using h-parameters for transistor circuits, their numerical

subscripts are replaced by the first letters for defining them.

h11 = hi = input impedance output shorted

h21 = hf = forward current gain output shorted

h12 = hr = reverse voltage gain input open

h22 = ho = output admittance input open

Ony
angoS
.Obur
a 25/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

A second subscript is added to the above parameters to

indicate the particular configuration. That is,

▶ For CE-connection, the four parameters are written as:

hie , hfe , hre and hoe

▶ For CB-connection, these are written as

hib , hfb , hrb and hob

▶ And for CC-connection as

hic , hfc , hrc and hoc

Ony
angoS
.Obur
a 26/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

The h-parameters of an ideal transistor

When small ac signals are involved, a transistor behaves like a

linear device...

...because its output ac signal varies directly as the input

signal.

Hence, for small ac signals, each transistor has its own

characteristic set of h-parameters or constants.

Ony
angoS
.Obur
a 27/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

The h-parameters depend on a number of factors such as

1. Transistor type
2. Configuration
3. Operating point
4. Temperature
5. Frequency

These h-parameters can be found experimentally or graphically.

Ony
angoS
.Obur
a 28/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

The parameters hi and hr are determined from input

characteristics of the CE transistor...

...whereas hf and ho are found from output characteristics.

Ony
angoS
.Obur
a 29/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

The h-parameters of an ideal CB-transistor

In Figure 8(a), a CB-connected transistor is shown in a black box.
Figure 8(b) gives its ac equivalent circuit.

Note that no external biassing resistors or any signal source is

shown connected to the transistor.

Figure 8: A CB-connected transistor is shown in a black box and its

ac equivalent circuit.

Ony
angoS
.Obur
a 30/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

(i). Forward parameters

The two forward h-parameters can be found from the circuit of

Figure 9(a) with a short across the output.

The input impedance is simply re .

hib = re

Figure 9: A CB-connected transistor.

Ony
angoS
.Obur
a 31/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

The output current equals αie . Since it flows out of the box, it is
taken as −ive. The forward current gain is
−αie
hfb = = −α (7)
ie
The forward current gain is also called the ac α of the
CB-circuit.

Ony
angoS
.Obur
a 32/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

(ii). Reverse parameters

The two reverse parameters can be found from the circuit

diagram of Figure 9(b).

When input terminals are open, there can be no ac emitter

current.

It means that ac current source (inside the box) has a value of

zero and so appears as an ‘open’.

Ony
angoS
.Obur
a 33/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Ony
angoS
.Obur
a 34/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Because of this open, no voltage can appear across input

terminals however large v2 may be. Hence, with v1 = 0,
v1 0
hrb = = =0 (8)
v2 v2

Similarly, the impedance, looking into the output terminals is

1
infinite. Thus, its admittance, = ∞ is zero.

∴ hob = 0 (9)

Ony
angoS
.Obur
a 35/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Summary

The four h-parameters of an ideal transistor connected in the CB

configuration are hib = re , hfb = −α, hrb = 0, hob = 0

Figure 10: The ac equivalent CB-connected hybrid circuit.

Ony
angoS
.Obur
a 36/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Note that in an actual transistor, hrb and hob are not zero but
have extremely small finite values (ranging from 10−4 to 10−6 ).

That implies that,

▶ The output impedance is not infinity but very high so
that hob is extremely small.

▶ There is some feedback between the output and the

input circuits (even with open input) tho’ it’s very small.

▶ Hence, hrb is very small.

Ony
angoS
.Obur
a 37/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

The h-parameters of an ideal CE-transistor

Figure 11(a) shows a CE-connected ideal transistor contained in

a black box whereas...

...Figure 11(b) shows its ac equivalent circuit in terms of its β

and resistance values.

Figure 11: A CE-connected ideal transistor contained in a black box.

Ony
angoS
.Obur
a 38/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

(i). Forward parameters

The two forward h-parameters can be found from the circuit of

Figure 12(a) where output has been shorted.

Figure 12: A CE-connected ideal transistor with shorted output and

with open input terminal.

Ony
angoS
.Obur
a 39/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Clearly, the input impedance is simply βre .

∴ hie = βre

The forward current gain is given by

i2 βib
hfe = = =β (10)
i1 ib
This forward current gain is also called the ac β of the CE
circuit.

Ony
angoS
.Obur
a 40/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

(ii). Reverse parameters

These can be found using Figure 12(b) where input terminals are
open and output terminals are driven by a voltage source v2 .

With input terminals open, there can be no base current so

that ib = 0.

If ib = 0, then collector current source has zero value and

looks like an open.

Ony
angoS
.Obur
a 41/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Hence, v1 = 0V due to this open.

v1 0
hre = = =0 (11)
v2 v2
Again, the impedance looking into the output terminals is
infinite so that conductance is zero.

∴ hoe = 0

Hence, the four h-parameters of an ideal transistor connected

in CE-configuration are:

hie = βre , hfe = β, hre = 0 and hoe = 0

Ony
angoS
.Obur
a 42/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

The ac equivalent hybrid circuit of the CE transistor is shown

in Figure 13.

Also note in practice, that hre and hoe are not exactly zero but
quite small for the same reasons given previously.

Figure 13: The hybrid equivalent circuit of the transistor.

Ony
angoS
.Obur
a 43/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Approximate hybrid equivalent circuits

By definition, an ideal amplifier is one which responds only to

signals applied to its input terminals.

It should not do the reverse i.e. reproduce at the input any

portion of the ac signal applied at the output.

Such an ideal one-way device is called a unilateral device.

Ony
angoS
.Obur
a 44/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

So far, we did not take into account the following factors which
exist in an actual as opposed to ideal transistors

i). A real transistor cannot be unilateral ∵ of unavoidable

interaction between its input and output circuits.

Thus, not only its output responds to its input but, to a

lesser degree, its input also responds to its output.

Ony
angoS
.Obur
a 45/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

ii). Due to the transistor’s non-unilateral behaviour, there is a

‘feedback’ of the output voltage into the input voltage.

This feedback is represented by a voltage-controlled

generator hr v2 in Figure 14 and 15.

iii). Even when input circuits is open, there is some effective

value of conductance when looking into the transistor
from its output terminals. It is represented by ho .

Ony
angoS
.Obur
a 46/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Ony
angoS
.Obur
a 47/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Low-frequency small-signal hybrid ac equivalent circuits with

‘feedback’ voltage generator and output admittance

(i). Hybrid CB-circuit

Figure 14(a) and (b) respectively show a CB-configuration NPN

transistor and its ac equivalent circuit with h-parameters.

The V -I relationships are given by the following two equations.

veb = hib ie + hrb vcb

ic = hfb ie + hob vcb

Ony
angoS
.Obur
a 48/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Figure 14: (a) An NPN transistor connected in CB configuration, and

(b) Its ac equivalent circuit employing h-parameters.

Ony
angoS
.Obur
a 49/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Note the following

▶ That no external dc biasing resistor or ac voltage sources

have been connected to the equivalent circuit as yet.

▶ That the ac equivalent circuit contains a Thévenin’s circuit

in the input and a Norton’s circuit in the output.

The more a reason to call it a hybrid equivalent circuit.

Ony
angoS
.Obur
a 50/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

(ii). Hybrid CE Circuit

The hybrid equivalent of the transistor alone in CE

configuration is shown in Figure 15(b).

Figure 15: (a) An NPN transistor connected in CE configuration, and

(b) Its ac equivalent circuit employing h-parameters.

Ony
angoS
.Obur
a 51/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Its V -I characteristics are described by the following two equations.

vbe = hie ib + hre vce

ic = hfb ib + hoe vce

As we will soon see, we may connect signal input source across

its input terminals...

....and load resistance across output terminals.

Ony
angoS
.Obur
a 52/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Transistor amplifier formulae using h-parameters

If we add a signal source across 1-1 of a transistor and a load

resistor across 2-2,...

...then we get a small-signal, low-frequency hybrid model of a

transistor amplifier as shown in Figure 16,

It is valid for CB, CE and CC configurations and holds good

for all types of loads whether a resistance of an impedance.

Ony
angoS
.Obur
a 53/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Figure 16: (a) An ac equivalent circuit employing h-parameters.

Ony
angoS
.Obur
a 54/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

The above model can be described mathematically by using the

following two equations:

Input circuit

v1 = sum of voltage drops from e to b

(12)
= hi i1 + hr v2

Output circuit

i2 = sum of currents leaving junction c

(13)
= hf i1 + ho v2

Ony
angoS
.Obur
a 55/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Ony
angoS
.Obur
a 56/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Now, v2 = −i2 rL . Substituting this value in (13) above, we have

i2 = hf i1 − ho i2 rL (14)

Equations (12) and (14) can now be used to find various gains of a
transistor.
v1 = hi i1 + hr v2
i2 = hf i1 − ho i2 rL

Ony
angoS
.Obur
a 57/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

(i). Current gain

Current gain is given by Ai = i2 /i1 . Dividing both sides of (14) by

i1 , we get

hf
∴ Ai =
1 + ho rL

If rL = 0 or ho rL ≪ 1, then Ai = hf

Ony
angoS
.Obur
a 58/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Current gain taking RS into account

The source current, iS is not the transistor input current because

iS partly flows along RS and partly along rin .

To illustrate this point, consider the Norton’s equivalent of the

source in Figure 17.

The overall current gain Ais is given by

i2 i2 i1 i1
Ais = = × = Ai
is i1 is is

Ony
angoS
.Obur
a 59/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Ony
angoS
.Obur
a 60/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Figure 17: Norton’s equivalent of the source.

Ony
angoS
.Obur
a 61/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

As seen from Figure 17

is Rs
i1 = or
rin + Rs
i1 Rs
=
is rin + Rs
i1
But Ais = Ai
is

Rs
Ais = Ai ·
rin + Rs

Ony
angoS
.Obur
a 62/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

(ii). Input impedance

It is defined as the resistance/impedance when looking into

the amplifier from its input terminals. Hence,
v1
rin =
i1
From (12) above, we have v1 = hi i1 + hr v2

v1 hi i1 + hr v2
rin = =
i1 i1
v2
= hi + hr ·
i1

Ony
angoS
.Obur
a 63/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Substituting the value of v2 = −i2 rL = −Ai i1 rL , we get

v2
rin = hi + hr ·
i1
−Ai i1 rL
= hi + hr · = hi − hr Ai rL
i1
hf
But since Ai =
1 + ho rL

hf hr rL hi (1 + ho rL ) − hf hr rL
rin = hi − =
1 + ho rL 1 + ho rL
∼
= hi if hr , ho or rL is very small

It is seen that rin depends on rL

Ony
angoS
.Obur
a 64/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

(iii). Voltage gain

v2
Voltage gain is given by Av =
v1

It is also known as the internal voltage gain of the transistor.

v2
It is different from Avs = ...
vs

...which is the gain from the source to the output terminals

and is known as stage gain or overall gain.

Ony
angoS
.Obur
a 65/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

As seen from above, v2 = −i2 rL = −Ai i1 rL and v1 = i1 rin

v2 −Ai i1 rL −Ai rL
∴ Av = = =
v1 i1 rin rin

hf hi (1 + ho rL ) − hf hr rL
But Ai = , and rin =
1 + ho rL 1 + ho rL

−Ai rL hf 1 + ho rL
∴ Av = =− · · rL
rin 1 + ho rL hi (1 + ho rL ) − hf hr rL

hf rL rL
Av = − ≈ hf
hi (1 + ho rL ) − hf hr rL hi

Ony
angoS
.Obur
a 66/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Ony
angoS
.Obur
a 67/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Overall voltage gain is

v2 v2 v1 v1
Avs = = · = Av
vs v1 vs vs

v1 rin
Avs = Av = Av
vs RS + rin

Thus, if RS = 0 , Avs = Av .

Ony
angoS
.Obur
a 68/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

(iv). Output impedance

It is defined as
v2 i2
ro = or go =
i2 vs =0 v2 vs =0

Dividing both sides of (13)

i2 = hf i1 + ho v2

Ony
angoS
.Obur
a 69/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

by v2 , we get
i2 hf i1 ho v2
= +
v2 v2 v2
hf i1 ho v2
go = +
v2 v2

i1
go = hf · + ho (15)
v2
Taking vs = 0 and then applying KVL to the input circuit in Figure
16, we get

−i1 (hi + RS ) − hr v2 = 0
i1 −hr
=
v2 hi + RS

Ony
angoS
.Obur
a 70/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Ony
angoS
.Obur
a 71/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Substituting this value in (15) above, we have

i1 −hr
go = hf · + ho = hf · + ho
v2 hi + RS
−hf hr ho ho (hi + RS ) − hf hr
= + =
hi + RS 1 hi + RS
Thus

1 hi + RS
ro = =
go ho (hi + RS ) − hf hr

Notice that rin depends on rL whereas ro depends on RS .

If RS is very large (i.e. circuit is driven by a current source) or hr is

negligible, then ro ≈ 1/ho .
Ony
angoS
.Obur
a 72/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

(v). Power gain

P2 v2 i2 rL
Ap = = = Av Ai = A2i
P1 v1 i1 rin

Ony
angoS
.Obur
a 73/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Typical values of transistor h-parameters

Typical parameter values are given in the table below for each of
the three configurations

Table 1: Typical values of transistor h-parameters.

Parameter CB CE CC
hi 25Ω 1K 1K
hr 3 × 10−4 2.5 × 10−4 ∼
=1
hf −0.98 50 −50
ho 0.5 × 10−6 S 25 × 10−6 S 25 × 10−6 S

Ony
angoS
.Obur
a 74/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Approximate hybrid formulas

The approximate hybrid formulas for the three connections are

listed below.

These are applicable when ho and hr are very small and RS is

very large.

The values of rin(stage) or rin′ and ro(stage) will depend on the

biasing resistors and load resistance respectively.

Ony
angoS
.Obur
a 75/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Table 2: Approximate hybrid formulas.

Item CE CB CC

rin hie hib hic + hfe RL

1 1 hie
ro
hoc hob hfc
Ai hfe = β −hfb ∼
=1 −hfe ∼
=β
hie RC hfb RC
Av 1
his hib

Ony
angoS
.Obur
a 76/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Example 2

A transistor used in CB circuit has the following set of parameters:

hib = 36Ω, hfb = 0.98, hrb = 5 × 10−4 , hob = 10−6 Siemens. With
RS = 2K and RC = 10K , calculate
i). rin(base)
ii). rout
iii). Ai and
iv). Av .

Ony
angoS
.Obur
a 77/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Example 3

The transistor used in the CE connection in Figure 18 has the

following set of h-parameters: hie = 1K , hfe = 100, hre = 5 × 10−4
and hoe = 2 × 10−5 S. With RS = 2K and RC = 5K , determine
i). rin
ii). ro
iii). Ai and
iv). Av

Ony
angoS
.Obur
a 78/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Figure 18: CE circuit.

Ony
angoS
.Obur
a 79/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

Table 3: Approximate hybrid formulas.

From CB to CE From CE to CB From CE to CC

hib hie
hie = hib = hic = hie
1 + hfb 1 + hfe
hob hoe
hoe = hob = hoc = hoe
1 + hfb 1 + hfe
−hfb −hfe
hfe = hfb = hfc = 1 + hfe
1 + hfb 1 + hfe
hib hob hie hoe
hre = −hrb hrb = −hre hrc = 1 − hre ∼
=1
1 + hfb 1 + hfe

Ony
angoS
.Obur
a 80/81
 DEPARTMENT OF
ELECTRICAL ENGINEERING

81/81