BSS308PE

OptiMOS™ P3 Small-Signal-Transistor Product Summary

Features
V DS ­30 V
• P-channel
R DS(on),max V GS=-10 V 80 mΩ
• Enhancement mode
V GS=-4.5 V 130
• Logic level (4.5V rated)
ID -2.0 A
• ESD protected
PG-SOT-23
• Qualified according to AEC Q101
3
• 100% lead-free; RoHS compliant

• Halogen-free according to IEC61249-2-21

1
2

Type Package Tape and Reel Information Marking Lead Free Packing
BSS308PE PG-SOT23 H6327: 3000 pcs/ reel YFs Yes Non dry

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current ID T A=25 °C -2.0 A

T A=70 °C -1.6

Pulsed drain current I D,pulse T A=25 °C -8.0

Avalanche energy, single pulse E AS I D=-2 A, R GS=25 Ω -10.7 mJ

I D=-2 A,
V DS=-16V,
Reverse diode dv /dt dv /dt 6 kV/µs
di /dt =-200A/µs,
T j,max=150 °C

Gate source voltage V GS ±20 V

Power dissipation1) P tot T A=25 °C 0.5 W

Operating and storage temperature T j, T stg -55 ... 150 °C

ESD Class JESD22-A114 -HBM 2 (2kV to 4kV)

Soldering Temperature 260 °C °C

IEC climatic category; DIN IEC 68-1 55/150/56 °C

Rev 2.03 page 1 2011-07-08

 BSS308PE

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance,
R thJA minimal footprint1) - - 250 K/W
junction - ambient

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS= 0V, I D=-250µA -30 - - V

Gate threshold voltage V GS(th) V DS=VGS, I D=-11µA -2.0 -1.5 -1.0

V DS=-30V, V GS=0 V,
Drain-source leakage current I DSS - - -1 μA
T j=25 °C

V DS=-30V, V GS=0V,
- - -100
T j=150 °C

Gate-source leakage current I GSS V GS=-20V, V DS=0V - - -5 μA

V GS=-4.5 V,
Drain-source on-state resistance R DS(on) - 88 130 mΩ
I D=-1.7 A

V GS=-10 V, I D=-2 A - 62 80

|V DS|>2|I D|R DS(on)max,

Transconductance g fs 4.6 - S
I D=-1.6 A

1)
Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides
of the PCB.

Rev 2.03 page 2 2011-07-08

 BSS308PE

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

Input capacitance C iss - 376 500 pF

V GS=0 V, V DS=-15 V,
Output capacitance C oss - 196 261
f =1 MHz
Reverse transfer capacitance Crss - 12 18

Turn-on delay time t d(on) - 5.6 - ns

Rise time tr V DD=-15V, - 7.7 -

V GS=-10 V,
Turn-off delay time t d(off) I D=-2 A, R G=6 Ω - 15.3 -

Fall time tf - 2.8 -

Gate Charge Characteristics

Gate to source charge Q gs - -1.2 - nC

Gate to drain charge Q gd V DD=-15 V, I D=-2 A, - -0.6 -

V GS=0 to -10 V
Gate charge total Qg - -5.0 -

Gate plateau voltage V plateau - -3.1 - V

Reverse Diode

Diode continous forward current IS - - -0.4 A

T A=25 °C
Diode pulse current I S,pulse - - -8.4

V GS=0 V, I F=-2 A,
Diode forward voltage V SD - -0.8 -1.1 V
T j=25 °C

Reverse recovery time t rr V R=10 V, I F=-2 A, - 14 - ns

di F/dt =100 A/µs
Reverse recovery charge Q rr - -5.9 - nC

Rev 2.03 page 3 2011-07-08

 BSS308PE
1 Power dissipation 2 Drain current
P tot=f(T A) I D=f(T A); V GS≥10 V

2.2

0.5 2

1.8

1.6
0.375
1.4
P tot [W]

1.2

I D [A]
0.25 1

0.8

0.6
0.125
0.4

0.2

0 0
0 40 80 120 160 0 20 40 60 80 100 120 140 160
T A [°C] T A [°C]

3 Safe operating area 4 Max. transient thermal impedance

I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p)
parameter: t p parameter: D =t p/T

101 103
10 µs 1 µs

100 µs

100 1 ms
0.5
102

10 ms 0.2

10-1 0.1
Z thJA [K/W]

0.05
I D [A]

101 0.02

0.01
10-2
DC
single pulse

0
10
10-3

10-4 10-1
-1 0 1 2
10 10 10 10 10-5 10-4 10-3 10-2 10-1 100 101 102
V DS [V] t p [s]

Rev 2.03 page 4 2011-07-08

 BSS308PE
5 Typ. output characteristics 6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C
parameter: V GS parameter: V GS

6 400
4.5 V 2.8 V

10 V 350
4V
3V
5

3.5 V 300

4
250 3.3 V

R DS(on) [mΩ]
I D [A]

3.3 V
3 200
3.5 V

150
2
4V
3V 100
4.5 V

1 10 V
2.8 V
50

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1 1.5 2 2.5 3 3.5 4
V DS [V] I D [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C

4 8

3 6

25 °C
g fs [S]
I D [A]

2 4

1 2

150 °C

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 6
V GS [V] I D [A]

Rev 2.03 page 5 2011-07-08

 BSS308PE
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=-2 A; V GS=-10 V V GS(th)=f(T j); V DS=VGS; I D=11 µA
parameter: I D

140 2.4

120
2
98 %

100
1.6
98 %
typ
R DS(on) [mΩ]

80

V GS(th) [V]
1.2
typ 2%
60

0.8
40

0.4
20

0 0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
T j [°C] T j [°C]

11 Typ. capacitances 12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD)
parameter: T j

103 101

Ciss
150 °C
Coss

100
25 °C
102
C [pF]

I F [A]

150 °C, 98%

10-1
Crss

25 °C, 98%
101

10-2

100 10-3
0 5 10 15 20 0 0.4 0.8 1.2 1.6
V DS [V] V SD [V]

Rev 2.03 page 6 2011-07-08

 BSS308PE
13 Avalanche characteristics 14 Typ. gate charge

I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-2 A pulsed

parameter: T j(start) parameter: V DD

101 10

15 V
25 °C 6

V GS [V]
I AV [A]

6V
100 100 °C

24 V

125 °C

10-1 0
100 101 102 103 0 1 2 3 4 5 6
t AV [µs] Q gate [nC]

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=250 µA

33
V GS

Qg
32

31
V BR(DSS) [V]

30

V g s(th)

29

28
Q g(th) Q sw Q g ate

Q gs Q gd
27
-60 -20 20 60 100 140
T j [°C]

Rev 2.03 page 7 2011-07-08

 BSS308PE

SOT-23

Package Outline:

Footprint: Packaging:

Rev 2.03 page 8 2011-07-08

 BSS308PE

Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.

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The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.

Rev 2.03 page 9 2011-07-08