EELXE - 7 - Y1 Analogue Electronics 2
EELXE - 7 - Y1 Analogue Electronics 2
Programme Title:
Bachelor of Engineering in Electronic Engineering, Year 1
Duration: 2 Hours
Note to Candidates: Please check the Programme Title and the Module Title to ensure that you are
attempting the correct examination paper.
If in doubt please contact an Invigilator.
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COMPULSORY QUESTION
Q. 1 (a) Show how the maximum power dissipation curve for a transistor may be drawn
on the transistor’s output characteristics.
Illustrate the direction of curve displacement if the ambient operating
temperature of the device is to be increased. [10 marks]
(b) Sketch typical output characteristics for a common emitter transistor and
illustrate the region where the transistor is said to be saturated.
What bias condition exists at the collector-base junction (VCB) when a transistor
operates in the saturated region? [10 marks]
(c) Explain why the output voltage of a common emitter transistor amplifier is
180° out of phase with the input voltage. [10 marks]
(d) Briefly distinguish between avalanche breakdown and zener breakdown in a
reverse-biased pn-junction. [10 marks]
Q. 2 (a) Draw the circuit diagram of a simple zener diode regulator and briefly explain
how the circuit minimises the effects of supply voltage variations on the load
voltage. [8 Marks]
(b) A zener diode has a reverse breakdown voltage of 4.7V and may be considered
a linear resistance of 4Ω for voltages beyond this value It is to be used in a
simple voltage regulator circuit to maintain 5.0V across a 200Ω load from a
nominal 10V supply.
Calculate a suitable value of series resistor. [8 Marks]
(c) Determine the power dissipated in the series resistor and in the diode. [8 Marks]
(d) Calculate the change in load voltage if the supply voltage increases by 10%. [6 Marks]
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Q. 3
V CC ( + 12V )
RL
R1
Ω)
(800
R2 RE
CE
0V
Figure 1
(a) Explain what is meant by stabilisation of the operating point and how it is
achieved in the amplifier of Figure 1. [8 Marks]
(b) Explain the function of each of the five labelled components in Figure 1. [10 Marks]
(c) The transistor in the common emitter amplifier of Figure 1 has a dc current
gain(β) of 40 and a base–emitter voltage(VBE) of 0.65V.
Determine suitable values for R1 , R 2 , and R E if the amplifier is to have
quiescent operating conditions of VCE = 6.0V and IC = 5mA. [12 Marks]
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Q. 4 The output characteristics of an NPN transistor are tabulated below (assumed
to be linear over the given range).
The transistor is to be used in the common emitter mode with a resistive load
of 2 kΩ and a supply voltage of 12V.
(a) Plot the output characteristics and draw the load-line on graph paper. [12 Marks]
(b) Calculate the amplifier ac current gain for an input base current of 40µAP-P
varying sinusoidally about a mean value of 50 µA. [6 Marks]
(c) Calculate the ac voltage gain if the ac input resistance is 1400Ω. [6 Marks]
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