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CH4 The Hybrid-Pi Model

The document discusses small signal BJT amplifier design and analysis. It introduces the hybrid-pi and re models for analyzing small signal behavior. It then describes the parameters of the hybrid model for common emitter configuration and provides the parameter values for a 2N2222A BJT. It also shows a simplified hybrid model and describes the re model for common base configuration.

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William Alikis
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94 views4 pages

CH4 The Hybrid-Pi Model

The document discusses small signal BJT amplifier design and analysis. It introduces the hybrid-pi and re models for analyzing small signal behavior. It then describes the parameters of the hybrid model for common emitter configuration and provides the parameter values for a 2N2222A BJT. It also shows a simplified hybrid model and describes the re model for common base configuration.

Uploaded by

William Alikis
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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ACTIVE DEVICES I /CHAPTER IV : BJT Amplifiers L04

BJT Amplifiers, small signal design and analysis

1. Introduction

A small-signal model is an AC equivalent circuit in which the nonlinear circuit elements


are replaced by linear elements whose values are given by the first-order (linear)
approximation of their characteristic curve near the bias point. It is applicable to electronic
circuits in which the AC signals are small relative to the DC bias currents and voltages.

There are two models commonly used in small signal AC analysis of a transistor:
 Hybrid-pi equivalent model.
 re model.

2. The hybrid-pi model

The hybrid-pi model ( or h model) is a popular circuit model used for analyzing the small
signal behavior of bipolar junction. This model is a linearized two-port network approximation
to the BJT using the small-signal base-emitter voltage, collector-emitter voltage, base
current, and collector current.

3. The parameters of the hybrid model for common emitter configuration

The small signal hybrid model for the BJT takes advantage of the relative linearity of the
base and collector curves in the area or locality of the operating point. The quantities hie, hre,
hfe, and hoe are called the hybrid parameters and are the components of a small-signal
equivalent circuit.

Fig.1: Common emitter hybrid model

IGEE/UMBB | Teacher: Dr L.SADOUKI 1


ACTIVE DEVICES I /CHAPTER IV : BJT Amplifiers L04

a. Input impedance

∆
=
∆

b. Reverse voltage gain

∆
=
∆

c. Forward current gain

∆
=
∆

d. Output admittance

∆
=
∆

IGEE/UMBB | Teacher: Dr L.SADOUKI 2


ACTIVE DEVICES I /CHAPTER IV : BJT Amplifiers L04

The hybrid parameters as shown in the following table are drawn from the specification sheet
for the 2N2222A BJT.

Parameter Min Max


hie (K) 2 4
hre (x 10-4) - 8
hfe 50 300
hoe (S) 5 35

Table 1: hybrid parameters for the 2N2222A

From the previous table we can see that the value of hre is very small and can be neglected,
the hybrid model can be simplified by the following figure.

Fig.2: Simplified hybrid model


With :

∆
=
∆

= = =

= =

Note: In the Hybrid p model, the parameters can be found on the specification sheet of the
transistor.
IGEE/UMBB | Teacher: Dr L.SADOUKI 3
ACTIVE DEVICES I /CHAPTER IV : BJT Amplifiers L04

4. The parameters of the re model for Common Base Configuration


BJTs are basically current-controlled devices; therefore the re model uses Resistors (re and ro)
and a current source to duplicate the behavior of the transistor based on common base
configuration.

Fig.3: Common base re model.

With :

re = and ic   ie

IGEE/UMBB | Teacher: Dr L.SADOUKI 4

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