Accepted Manuscript

Regular paper

A 2-D MODELING OF Fe DOPED DUAL MATERIAL GATE AlGaN/AlN/

GaN HIGH ELECTRON MOBILITY TRANSISTORS FOR HIGH FRE-
QUENCY APPLICATIONS

K. Sowmya, N.B. Balamurugan, V. Parvathy

PII: S1434-8411(18)32149-6
DOI: https://doi.org/10.1016/j.aeue.2019.02.016
Reference: AEUE 52682

To appear in: International Journal of Electronics and Communi-

cations

Received Date: 10 August 2018

Revised Date: 25 February 2019
Accepted Date: 26 February 2019

Please cite this article as: K. Sowmya, N.B. Balamurugan, V. Parvathy, A 2-D MODELING OF Fe DOPED DUAL
MATERIAL GATE AlGaN/AlN/GaN HIGH ELECTRON MOBILITY TRANSISTORS FOR HIGH
FREQUENCY APPLICATIONS, International Journal of Electronics and Communications (2019), doi: https://
doi.org/10.1016/j.aeue.2019.02.016

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 A 2-D MODELING OF Fe DOPED DUAL MATERIAL GATE AlGaN/AlN/GaN HIGH
ELECTRON MOBILITY TRANSISTORS FOR HIGH FREQUENCY APPLICATIONS
K.SOWMYA1, N.B.BALAMURUGAN1, V.PARVATHY1
1
Department of Electronics and Communication Engineering, ThiagarajarCollege of Engineering,
Madurai, India
E-mail: [email protected], [email protected], [email protected]
Abstract: The prototype of Fe doped Dual Material Gate AlGaN/AlN/GaN High Electron Mobility
Transistors(HEMTs) developed by a Finite Difference Method(FDM) is addressed in this paper. The
equations are illustrated in a way that the dual material gate disintegrates into two distinct single
material gates by discreting one 2-D equation into two isolated equations. The boundary conditions
conclude in the clubbed model of two 1D equations. The work functions of two metal gates, their length
difference and applied drain voltage, the proposed model estimates the Channel potential, Electric field,
Threshold voltage and Drain current. A momentous increase of the drain current is witnessed when the
δ-doping is integrated in the AlN layer. These features are also validated by TCAD Simulations.
Keywords: AlGaN/AlN/GaN HEMTs, FDM, Dual Material, Channel Potential, Electric Field, Drain
current.
I. INTRODUCTION
MOSFET scaling meets up escalating challenges like current leakage and short-channel
effects as the control on device gate decreases which results in performance degradation of the device.
The reduction of the transistor size to sub micrometer is required to progress the routine speed of the
transistor. Short channel effects (SCEs) occur when the gate length reaches below 300nm [1,2]. To
bring a quick fix to overcome this issue, many researchers focus on new channel materials (Dual
Material, Triple Material) and various device structures (TFETs, HEMTs, FINFETs).
The Dual Gate structures are efficient to restore the short channel effects by screening the
drain voltage [3,4]. It consists of two different material gates with different work functions that are
combined to generate a single gate. To improve the transport efficiency and to suppress the SCEs, the
work function of M1 (control gate) which is close to the source is always greater than the work
function of M2 (screen Gate) which is close to the drain. These structures terminate the step function
of channel potential which plays an important role to suppress the SCEs without sacrificing another
device behavior.
High-frequency generators are applicable to industrial sectors. These applications need high-
frequency transistors [5]. High Electron Mobility Transistors are highly satisfying devices for high-
frequency operations and low power applications. In HEMT technologies, III-V materials are apt for
high voltage and low noise applications owing to extensive band gap material, high density of 2DEG
in the channel, low intrinsic carrier density, and high saturation velocity[6-8]. To improve the features
of HEMT, research works are made in designing HEMT of different structures to screen the leakage
caused in the existing models [9-14].GaN HEMT structures excel in good efficiency for microwave
devices[15-23].Many analytical model like drain current model[24],physical model[25], compact
model[26-28], sub threshold voltage model[29] were developed for HEMTs. Kumar et al[30]
developed a 2-D analytical model for DMG AlGaN/GaN HEMT to analyze the minimum sub
threshold characteristics. Insulating the gate dielectrics reduces the gate leakage current which
enhances the operating voltage and shields the surface and making the performance of
AlGaN/GaNHEMTs apt for towering power and high-temperature applications. Among these, nitride-
based dielectrics especially AlN is the most preferred one due to its larger band gap and a smaller
lattice mismatch [31].
The aspects of the HEMT two-dimensional electron gas (2DEG) within the channel are
typically studied by solving the Poisson equations in a self-consistent matter, using various analytical
techniques [32,33]. Traditional analytical methods may be computationally slow, limiting their
usefulness in device/circuit design and analysis applications. The numerical methods are swift to
figure out the structure when compared to conventional analytical models [34].Furthermore, the
application of the finite difference method can result in the preciseness in numerical simulations with
reasonable computational effort.
In this paper, by using the finite difference method, we have proposed a model for Fe doped
dual Material Gate AlGaN/AlN/GaN High Electron Mobility Transistors. Improvement in the
performance of HEMT structure can also be achieved by using the inclusion of AlN in the hetero-
structure leads to an enhanced electron transfer from the δ-doping plane to the channel [35-40]. The
two gates of Dual Material Gate are decomposed into two separate gates with diverse work functions
using finite difference method. This will end result in two single-material gate HEMT—one with a
lower gate work function and the other with a higher gate work function. The surface potential of this
two individual HEMTis modeled using the appropriate boundary conditions, depletion approximation
combines the complex 2-D Poisson’s equation and results in a simple solution. The main objective of
this work is to compare the device performance metrics of Fe doped AlGaN/AlN/GaN HEMTs with
conventional HEMTs. The analytical results be compared with the TCAD simulations for various
values of gate-to-source voltage (vgs), drain-source voltage(Vds), and gate length(L) which proves that
the subtractive effects of short channel effects are very well observed in Fe-doped DMG HEMTs.
This research paper is arranged as follows: The detailed structure analysis of the device is
dicussed in Section II. The description about the simulation model of the device and its calibration is
dealt in Section III. Conclusions are drawn in Section IV.
 II. MODEL FORMULATION

(a) (b)
Figure.1 (a) Schematic view of Fe Doped Dual Material Gate AlGaN/AlN/GaNHEMT (b)
Dimensional view of the proposed work

A. Device structure and description

The schematic illustration of the planned Fe Doped Dual Material Gate AlGaN/AlN/GaN
HEMT and dimensional view of the proposed view is shown in Fig. 1(a) and Fig. 1(b) in that order.
The layer sequence from top to bottom is Metal/GaN/AlGaN/AlN/AlGaN/GaN/GaN/Si, with a two-
dimensional electron gas (2DEG) channel formed at the boundary between the Fe doped AlGaN and
GaN. The Fe δ-doped plane is sandwiched between thin AlN layers and this layer acts as a donor of
charge carriers to the channel.The proposed device has the subsequent parameters: The work
function of gate M1=5.3eV, the work function of gate M2= 4.1eV, Gate to Source length (LSG) =
0.9µm, length of the Gate (L) =120nm, length of Gate to Drain (LGD) = 1.3µm., length of the
Source(Ls)=0.042µm, length of the Drain(LD)=0.042µm, barrier and spacer layer thickness is
30nm.The source and the drain regions are consistently doped at Nd = 1019 cm−3.

B. Finite Difference Method for Fe doped AlGaN/AlN/GaN HEMTs

The 2D Poisson equation for Dual Material Gate AlGaN/AlN/GaN HEMT is given by,
where, q - Electron charge (1.6*10-19 C),εa– Permittivity of AlGaN and AIN, Φ(x,y) - Electrostatic
potential and Nd - Doping concentration (1019cm-3).The boundary conditions are
1) Channel Potential at dissimilar metals is continuous
φ1(x, d)  φ 2 (x, d) at x=0 to L (2)

2) Electric Field at dissimilar metals is continuous

d1 ( x, y) d 2 ( x, y)
 at x=0 to L (3)
dx dx

3) l1 ( x,0)  Vg1 where Vg1  Vgs  VFB1

(4)
4) l 2 ( x,0)  Vg 2 whereV g 2  Vgs  VFB 2
(5)

d1 ( x, y) qn s1
5)   Fi1 whereFi1 
dy y d
a
(6)
d 2 ( x, y ) qn s 2
6)   Fi 2 whereFi 2 
dy y d
a
(7)
7) Potential at the source end is

1 (0, d )  Vbi  L1 (0) (8)

8) Potential at the drain end is
2 ( L1  L2 , d )  Vbi  Vds   L 2 ( L1  L2 )where L1  L2  L (9)

C. Surface Potential model

A new delta-doped structure, including an AlN barrier, which aims to improve the current
carrying capabilities of the HEMTs. A significant increase of the electron sheet density when the Fe
δ-doping plane is introduced in the barrier. The adding up of a thin AlN layer underneath and away
from the Fe doping plane boosts the acquiesce of the electron transfer into the channel without any
decline in the electron mobility of Fe doped DMG HEMT [37,38,39]. Consider the channel region to
be a uniformly doped region of a few nanometer lengths so that the channel is totally drained in the
OFF-state condition. If the channel potential values are picked at a minimum of three discrete
focuses (x = 0, x = L/2, x = L) along the x-axis, it can be availed in the finite-differentiation
approximation to solve Poisson’s equation. Correspondingly, to solve Poisson’s equation all along
the y-axis, we have preferred the channel potential values at three discrete points (y =d/2, y=0 and y
=-d/2). Solving (1) using the above approximations gives
 (0, y)  2 ( L1 , y)   ( L1  L2 , y)  ( x, d / 2)  2 ( x,0)   ( x,d / 2) qN d
  
L12 d2 /4 a
(10)
We can segregate the DMG HEMT into the two SMG HEMTs since the electric field and
surface potential of M1 and M2 are assumed to be non-contact with each other. Using FDM
approach, it can be decomposed as given in the following:

(11)

(12)
 ( x, d / 2)  2 ( x,0)   ( x,d / 2)
0
d2 /4
(13)
Equations (11) and (12) determine the 1-D Poisson’s equation along the x-axis for M1 and M2
respectively. The relation to the lateral surface potential along the y-axis is given in the Equation (13)
and it is based on the consideration that the derivative of the electric field at the intersection is zero.
Considering region 1 only, (11) it can be written in a normal form as given in the following:

(14)
where ϕo is the centric potential of the channel, ϕ(L1) and ϕ(L1+L2) are the surface potentials
(ϕs).[30]
Let,

(15)

Where Fi is the electric field at the boundary, λ is the characteristic length given by and

Vgiis the gate voltage, d = dd+di is the density of the AlGaN layer with dd as the density of the doped
AlGaN and di as the thickness of the spacer layer and substituting (15) in general equations, we get,
 (16)
Assume £a(x=0)=£11 and £a(x=L1+L2)=£22 and use the boundary conditions, the channel
potential [29] is obtained as following,

(17)

(18)

Where α is a scaling factor and it is determined as

j=1,2 (19)

D. Electric Field Distribution Model

The surface electric field, along the channel in the x-direction is an vital parameter as the
electron carrying velocity through the channel is directly related to the electric field, along with
the channel, whose x-component under M1 is provided by,

(20)

(21)

and under M2 is given by,

(22)

(23)
 E. Threshold voltage Model

The minimum channel potential required to turn on the device where the sub-threshold

leakage current often occurs is termed as the threshold voltage.The important effect of the short

channel effect is Drain Induced Barrier Lowering (DIBL). The threshold voltage is used to control

the effect of DIBL[41]. In DMG HEMT structures, the metal gate with the higher work function

acquires the minimum channel potential. Hence, the position of the minimum channel potential lies

under the M1 and is evaluated by the following equation,

(24)

(25)

F. Drain Current Model

The drain current in the 2DEG is calculated by the following basic equation:
I d  qWns ( x) E s (26)
-19
Where q is the electron charge( 1.6* 10 coulomb), ns(x) is a concentration of two-
dimensional electron gas, W is Gate Width and Es is Electron Velocity. The value of V s is given by,
0 F
Es  if F< Fc
F (27)
1
Fc

 dVc ( x) FT Vsat
Where F= and Fc 
dx  0 FT  Vsat (28)

Here µ0 is the Low field Mobility(0.009 m2/v/s), F is the longitudinal electric field, FT is the

saturation electric field, Vsat is the Saturation drift velocity. In the proposed model, the gap between

the gate and source/drain called as the access regions. These regions behave like a nonlinear resistor.
We model this effect by including the resistances rs and rd of the access regions in our model

described by

(29)

Where rc is the contact resistance, Rs is the sheet resistivity , LSG(GD) is the distance from gate edge to
the source (drain), V0 is the voltage drop across the access regions, and γ and k are model
parameters. The spontaneous and piezoelectric polarization effects have been considered in the
calculation of the 2DEG sheet charge density. Thus equation (26) becomes
 dVc ( x)   dVc ( x) 
1   I D  qW 0    s ( x)
 Fc d X   dx 

(30)

Where ηs(x) is the sheet charge density[42,43] and the drain current is obtained to integrate the left

side from 0 to L and right side from V s to Vd. The drain current becomes,
  
288 6 log e td  ts   816 5 td  ts   480 4 td 2  ts 2  200 3 td 3  ts 3  
ID  


2 3
 3
 5
 5
 2

52.5 td  ts  7.8 td  ts  0.5 td  ts  0.5 td  ts
2
6
6
 
(31)

Let

ts  Vgs  Vth  Vs 3  2 , td  Vgs  Vth  Vd 3  2  

1 1 W 0 C g Vd  Vs 
,  1
, Lg  Fc L g
2
 0  Cg  3
   
3  q 

Where Cg is the gate capacitance, Vgs is the gate to source voltage, Vth is the threshold voltage and 0

is the tentative data calculated using the effectual mass of the obstruction layer.

III. RESULT AND DISCUSSION

The proposed model of Fe doped DMG AlGaN/AlN/GaN HEMT is validated using the
TCAD simulation. The usage of Fe δ-dopant helps to accomplish the huge drain current by
increasing the sheet charge density. This doping profile is embedded between the thin AlN layer to
achieve good device performance. The 2-D surface potential is determined using a 1-D approach
which makes comparison easier. Hence, to demonstrate the advantage of this model, the surface
potential, electric field and threshold voltage is compared with DMG AlGaN/GaN HEMT. The
typical dimensions used for DMG HEMT are given in Table 1.
.
SYMBOL PARAMETERS VALUE

Nd The doping concentration of AlGaN 1019 cm 3

q Charge 1.6*10 19 C

L Length of the channel 120nm

d The thickness of the AlGaN layer 30nm

dd The thickness of the n-AlGaN layer and AlN layer 25nm

di The thickness of the spacer layer 5nm

εa=εalgan+εaln The dielectric constant of AlGaN 8.31*10 11 F / m

The dielectricconstant of GaN 8.5*10 11 F / m

s Sheet carrier density 1013 / cm 2

Vsat Saturation drift velocity 1.19E5m/s

FT Saturation electric field 190E5m2/V

TABLE 1 TYPICAL DIMENSIONS USED FOR DMG HEMT STRUCTURE

Fig.2 (b) compares the channel potential between Fe Doped DMG AlGaN/AlN/GaN HEMT
and DMG AlGaN/GaN HEMT with L=120nm,spacer and barrier layer thickness=30nm and
Nd=1019cm-3 along with channel position. The curve explains the presence of Fe Dopant between the
layers increases the channel potential more than the conventional HEMT. While the source side is
same as SMG (a), the drain end has increased the potential which is caused due to the interface of
two metals in the gates. Since the work function in M1 is higher than the work function in M2, it
requires more voltage to make the electrons flow under this side. Thereby DIBL is reduced by
increasing the drain voltage.
 Figure.2 The Channel Potential of HEMT with L=120nm, spacer and barrier layer thickness,
d=30nm and Nd=1019cm-3 along with channel position (a) SMG AlGaN/GaN HEMT (b) Fe- doped
DMG AlGaN/AlN/GaN HEMT compared with AlGaN/GaN HEMT

Figure.3 The channel potential of Fe- doped DMG AlGaN/AlN/GaN HEMT with L=120nm, spacer
and barrier layer thickness, d=30nm and Nd=1019cm-3 along with channel position for various Vds
Figure 4 The channel potential of Fe- doped DMGAlGaN/AlN/GaNHEMT with L=120nm, spacer
and barrier layer thickness, d=30nm and Nd=1019cm-3 along with channel position for various Vgs

Fig.3 shows the channel potential of the 120 nm gate length DMG Fe doped
AlGaN/AlN/GaN HEMT device for varying drain to Source voltage (Vds) from 0.2 V to 1V.
Channel potential increases with rising V ds and high channel potential is achieved by using a thin
AlN layer around the doping plane due to the augment of electron concentration in the form of 2DEG
and mobility. As Vds increases, the DIBL also increases in SMG. But in the DMG, as Vds increases,
the potential is also increasing at the drain end leading to reduced DIBL effect. This is because the
M1 acts as the control gate since it is far from the drain side. The V ds increase has no effect on the
channel region and M2 screens have the increased Vds. This will reduce the DIBL effect.
Fig.4 shows the variation of channel potential with normalized channel position for varying
Vgs from 0.2V to1V. For applications purpose higher transconductance is extremely desirable. The
insertion of the AlN prominently reduces the alloy scattering of 2DEG and results in the
enhancement of channel potential.When the negative voltage increases, the channel potential
decreases. This model reduces the DIBL effect compared to other model and also it predicts the best
result for both low and high voltages. Fig.5 is taken for various gate lengths in channel potential. As
the channel length is decreased, the control of the M1 shift towards the source and M2 takes the
control over the channel region, so the potential is increased at the drain end. Thereby, it reduces the
DIBL effect.
 Figure.5 The channel potential of Fe- doped DMGAlGaN/AlN/GaNHEMT withL=120nm, spacer
and barrier layer thickness, d=30nm and Nd=1019cm-3 along with channel position for various gate
length(L1)

Figure.6 The Electric field of HEMT with L=120nm, spacer and barrier layer thickness,
d=30nm,and Nd=1019cm-3 along with channel position (a) SMG AlGaN/GaN HEMT (b) Fe- doped
DMG AlGaN/AlN/GaN HEMT compared with AlGaN/GaNHEMT (c) Interfaceof two metal gate of
HEMT
 Figure.7 The electric field ofFe- doped DMGAlGaN/AlN/GaNHEMT HEMT with L=120nm,
spacer and barrier layer thickness, d=30nm and Nd=1019cm-3 along with channel position for
various Vds

Fig.6 shows the discrepancy of the electric field along the channel position for diverse
HEMTs (a) SMG AlGaN/GaN HEMT (b) Fe- doped DMG AlGaN/AlN/GaN HEMT compared with
AlGaN/GaN HEMT, here we find the most electric field is achieved in Fe Doped AlGaN/AlN/GaN
HEMT, which means the utmost carrier density is reached. As for SMG device, on the source
channel side, the increased electric field increases the carrier transport and the single peak on the
drain side increases the velocity speed of the electrons at the drain side. This causes the maximum
drift velocity at the drain side which increases the hot carrier effect. This effect is screened by DMG
due to the interface of the two metals in the gate is shown in figure 6(b). It reduces the drift velocity
at the drain side and minimizes the hot carrier effect.
Fig.7 is taken for various Vds in Electric field along with channel position. The curve
explains that the electric field, increasing for higher Vds. The velocity of the carrier is increased in
low Vds, so Electric field reduces the hot carrier effect in high V ds than in low Vds.Fig.8 is taken for
various Vgs in Electric field, along with channel position. The electric field at the drain end decreases
with respect to the average drift velocity as the gate voltage increases.M2 controls the voltage to
suppress the short channel effects.
Figure.8 The electric field of Fe- doped DMGAlGaN/AlN/GaNHEMT with L=120nm, spacer and
barrier layer thickness, d=30nm and Nd=1019cm-3 along with channel position for various Vgs

A3
Figure.9 The channel potential of Fe- doped DMGAlGaN/AlN/GaNHEMT withL=120nm, spacer
and barrier layer thickness, d=30nm and Nd=1019cm-3 along with channel position for various gate
length(L1)
Figure.10 Threshold voltage of Fe- doped DMG AlGaN/AlN/GaN HEMT with L=120nm , Vgs=-0.2
V, Vds=0.5 V and Nd=1019cm-3 along with channel position for various thickness (d)

Figure.11 The Drain Current of Fe- doped DMGAlGaN/AlN/GaNHEMT with L=120nm, spacer
and barrier layer thickness, d=30nm and Nd=1019cm-3 along with drain voltage for various Vgs
 Fig.9 shows the discrepancy of Electric field, along by means of channel position for
assorted gate lengths. As the channel length is decreased, the interface peak shift towards the left
side and thus the control of the M1, shift towards the source and M2 takes the control over the
channel region which increases the carrier flow.

Fig.10 takes for threshold voltage with different values of AlGaN thickness(d) along with
channel position. For long gate length devices, threshold voltage changes very small. This is
understood from Eq. (25) where sinh(L/λ) is in the denominator and hence, this term will increase
with decreases in L. But for large value of L, sinh(L/λ) becomes large and this term goes to zero and
the threshold voltage corresponds to that of a long channel HEMT. The model correctly predicts the
threshold voltage roll-off at shorter channel lengths[29,30] which has also been validated through the
simulations. This is due to the penetration of junction electric field in the channel region, causing
barrier lowering which leads to reduction in threshold voltage. The model accurately denotes the
threshold voltage roll-off at shorter channel HEMT which has also been validated through the
simulations. A slam match with the imitation results proves the precision of the proposed model.

Fig.11 shows the drain current discrepancy with different values of V gs along with Vds is
compared with Simulation result. The simulations are done using the Hydro dynamic model to
access the impact of the Fe delta doped between the AlN in the barrier layer and analysis is
performed using a Sentaurus TCAD simulator. The validation of the model is performed by
comparing the drain current model to Simulation result. In the saturation region, the drain current is
more accurate and almost constant than another region. The drain current increases with increased
Vgs. It increases the electron velocity in the channel.

IV. CONCLUSION
An advanced model of Fe doped dual material gate AlGaN/AlN/GaN HEMT has been
designed by the finite difference method to meet the complicated calculations. The device act as a
very good candidate for microwave frequency devices that could be ranged from 1 to 40 GHz.
In this work, the channel potential, electric field, threshold voltage and drain current are
characterized. Our representation smoothly correlates with the simulation results of SMG and
conventional DMG structure. The results prove the superiority of the dual material gate design in the
aspects of carrier density and gate controllability over the channel when compared with conventional
DMG and SMG structures. The SCE is suppressed as the gate in DMG screens the drain voltage
during the step function of channel potential which results in high drift velocity and improves the
carrier transport efficiency. The results also prove that the inclusion of the AlN layer leads to
enhancement in the device performance.

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