HAF2007(L), HAF2007(S)

Silicon N Channel MOS FET Series

Power Switching

Target specification
ADE-208-706 (Z)
1st. Edition
Dec. 1998

This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.

Features

• Logic level operation (4 to 6 V Gate drive)

• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Latch type shut–down operation (Need 0 voltage recovery)

Outline

DPAK–2
2, 4
D
4 4

1
G Gate resistor
1 2
Tempe– Latch Gate 3
rature Circuit Shut–
Sencing down
Circuit Circuit 1. Gate
2. Drain
1 2
3 3. Source
S 4. Drain
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HAF2007(L), HAF2007(S)

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS (16) V
Gate to source voltage VGSS (–2.5) V
Drain current ID 5 A
Note1
Drain peak current I D(pulse) 10 A
Body-drain diode reverse drain current I DR 5 A
Note2
Channel dissipation Pch 20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C

Typical Operation Characteristics

Item Symbol Min Typ Max Unit Test Conditions
Input voltage VIH 3.5 — — V
VIL — — 1.2 V
Input current I IH1 — — 100 µA Vi = 8V, VDS = 0
(Gate non shut down) I IH2 — — 50 µA Vi = 3.5V, VDS = 0
I IL — — 1 µA Vi = 1.2V, VDS = 0
Input current I IH(sd)1 — 0.8 — mA Vi = 8V, VDS = 0
(Gate non shut down) I IH(sd)2 — 0.35 — mA Vi = 3.5V, VDS = 0
Shut down temperature Tsd — 175 — °C Channel temperature
Gate operation voltage Vop 3.5 — 12 V

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 HAF2007(L), HAF2007(S)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions
Drain current I D1 (5) — — A VGS = 3.5V, VDS = 2V
Drain current I D2 — — 10 mA VGS = 1.2V, VDS = 2V
Drain to source breakdown voltage V(BR)DSS 60 — — V I D = 10mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS (16) — — V I G = (300µA), VDS = 0
Gate to source breakdown voltage V(BR)GSS (–2.5) — — V I G = (–100µA), VDS = 0
Gate to source leak current I GSS1 — — 100 µA VGS = 8V, VDS = 0
I GSS2 — — 50 µA VGS = 3.5V, VDS = 0
I GSS3 — — 1 µA VGS = 1.2V, VDS = 0
I GSS4 — — –100 µA VGS = –2.4V, VDS = 0
Input current (shut down) I GS(op)1 — 0.8 — mA VGS = 8V, VDS = 0
I GS(op)2 — 0.35 — mA VGS = 3.5V, VDS = 0
Zero gate voltege drain current I DSS — — 10 µA VDS = 60 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V I D = 1mA, VDS = 10V
Static drain to source on state RDS(on) — 100 160 mΩ I D = 2.5A, VGS = 4V Note3
resistance
Static drain to source on state RDS(on) — 70 100 mΩ I D = 2.5A, VGS = 10V Note3
resistance
Forward transfer admittance |yfs| (5) (18) — S I D = 2.5A, VDS = 10V Note3
Output capacitance Coss — (260) — pF VDS = 10V , VGS = 0
f = 1 MHz
Turn-on delay time t d(on) — ( ) — µs I D = 2.5A, VGS = 5V
Rise time tr — ( ) — µs RL = 12Ω
Turn-off delay time t d(off) — ( ) — µs
Fall time tf — ( ) — µs
Body–drain diode forward voltage VDF — (1.0) — V I F = 2.5A, VGS = 0
Body–drain diode reverse t rr — ( ) — ns I F = 5A, VGS = 0
recovery time diF/ dt =50A/µs
Over load shut down t os1 — ( ) — ms VGS = 5V, VDD = 12V
Note4
operation time t os2 — ( ) — ms VGS = 5V, VDD = 24V
Note: 3. Pulse test
4. Include the time shift based on increasing of chennel temperature when operete under over load
condition.

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HAF2007(L), HAF2007(S)

Main Characteristics

Power vs. Temperature Derating

40

Pch (W)
30
Channel Dissipation

20

10

0 50 100 150 200

Case Temperature Tc (°C)

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 HAF2007(L), HAF2007(S)

Package Dimensions

Unit: mm

1.7 ± 0.5

6.5 ± 0.5 2.3 ± 0.2

5.4 ± 0.5 0.55 ± 0.1
5.5 ± 0.5

1.7 ± 0.5
6.5 ± 0.5 2.3 ± 0.2
5.4 ± 0.5 0.55 ± 0.1
1.15 ± 0.1
0.8 ± 0.1
3.1 ± 0.5

16.2 ± 0.5

5.5 ± 0.5
1.2 Max
4.7 ± 0.5

1.15 ± 0.1 0 ~ 0.25

0.8 ± 0.1
2.29 ± 0.5 2.29 ± 0.5 0.55 ± 0.1
2.29 ± 0.5 2.29 ± 0.5
2.5 ± 0.5
0.55 ± 0.1 1.2 ± 0.3
Hitachi DPAK–2
EIAJ ( L type) SC–63
L type S type EIAJ ( S type) SC–64
JEDEC —

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HAF2007(L), HAF2007(S)

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