BSC036NE7NS3G

MOSFET
OptiMOSTM3Power-Transistor,75V SuperSO8

8 5
6
Features 7
6 7
8
5
•Optimizedtechnologyforsynchronousrectification
•IdealforhighfrequencyswitchingandDC/DCconverters
•ExcellentgatechargexRDS(on)product(FOM)
•Superiorthermalresistance
•N-channel,normallevel 1 4
3
•100%avalanchetested 2
3
2
1
•Pb-freeplating;RoHScompliant 4
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Halogen-freeaccordingtoIEC61249-2-21

S1 8D
Table1KeyPerformanceParameters
S2 7D
Parameter Value Unit
S3 6D
VDS 75 V
RDS(on),max 3.6 mΩ G4 5D

ID 159 A

Type/OrderingCode Package Marking RelatedLinks

BSC036NE7NS3 G PG-TDSON-8 036NE7NS -

1)
J-STD20 and JESD22
Final Data Sheet 1 Rev.2.1,2020-07-29
 OptiMOSTM3Power-Transistor,75V
BSC036NE7NS3G

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Final Data Sheet 2 Rev.2.1,2020-07-29

 OptiMOSTM3Power-Transistor,75V
BSC036NE7NS3G

1Maximumratings
atTA=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 159 VGS=10V,TC=25°C
Continuous drain current1) ID - - 101 A VGS=10V,TC=100°C
- - 20 VGS=10V,TA=25°C,RthJA=50K/W2)
Pulsed drain current3) ID,pulse - - 636 A TC=25°C
Avalanche energy, single pulse EAS - - 260 mJ ID=50A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
- - 156 TC=25°C
Power dissipation Ptot -
- - 2.5 TA=25°C,RthJA=50K/W2)
IEC climatic category;
Operating and storage temperature Tj,Tstg -55 - 150 °C
DIN IEC 68-1: 55/150/56

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case,
RthJC - - 0.8 K/W -
bottom
Thermal resistance, junction - case,
RthJC - - 18 K/W -
top
Device on PCB,
RthJA - - 62 K/W -
minimal footprint
Device on PCB,
RthJA - - 50 K/W -
6 cm2 cooling area2)

1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
Final Data Sheet 3 Rev.2.1,2020-07-29
 OptiMOSTM3Power-Transistor,75V
BSC036NE7NS3G

3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 75 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 2.3 3.1 3.8 V VDS=VGS,ID=110µA
- 0.1 1 VDS=75V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 100 VDS=75V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) - 2.9 3.6 mΩ VGS=10V,ID=50A
Gate resistance RG - 2.7 - Ω -
Transconductance gfs 50 100 - S |VDS|>2|ID|RDS(on)max,ID=50A

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 4400 - pF VGS=0V,VDS=37.5V,f=1MHz
Output capacitance Coss - 990 - pF VGS=0V,VDS=37.5V,f=1MHz
Reverse transfer capacitance Crss - 48 - pF VGS=0V,VDS=37.5V,f=1MHz
VDD=37.5V,VGS=10V,ID=25A,
Turn-on delay time td(on) - 14 - ns
RG=1.6Ω
VDD=37.5V,VGS=10V,ID=25A,
Rise time tr - 18 - ns
RG=1.6Ω
VDD=37.5V,VGS=10V,ID=25A,
Turn-off delay time td(off) - 38 - ns
RG=1.6Ω
VDD=37.5V,VGS=10V,ID=25A,
Fall time tf - 10 - ns
RG=1.6Ω

Table6Gatechargecharacteristics1)
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 22.1 - nC VDD=37.5V,ID=50A,VGS=0to10V
Gate to drain charge Qgd - 12.6 - nC VDD=37.5V,ID=50A,VGS=0to10V
Switching charge Qsw - 21.0 - nC VDD=37.5V,ID=50A,VGS=0to10V
Gate charge total Qg - 63.4 - nC VDD=37.5V,ID=50A,VGS=0to10V
Gate plateau voltage Vplateau - 5.0 - V VDD=37.5V,ID=50A,VGS=0to10V
Output charge Qoss - 65 - - VDD=37.5V,VGS=0V

1)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet 4 Rev.2.1,2020-07-29
 OptiMOSTM3Power-Transistor,75V
BSC036NE7NS3G

Table7Reversediode
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode continuous forward current IS - - 130 A TC=25°C
Diode pulse current IS,pulse - - 636 A TC=25°C
Diode forward voltage VSD - 0.9 1.2 V VGS=0V,IF=50A,Tj=25°C
Reverse recovery time trr - 44 - ns VR=37.5V,IF=25A,diF/dt=100A/µs
Reverse recovery charge Qrr - 64 - nC VR=37.5V,IF=25A,diF/dt=100A/µs

Final Data Sheet 5 Rev.2.1,2020-07-29

 OptiMOSTM3Power-Transistor,75V
BSC036NE7NS3G

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Draincurrent
175 175

150 150

125 125

100 100
Ptot[W]

ID[A]
75 75

50 50

25 25

0 0
0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160
TC[°C] TC[°C]
Ptot=f(TC) ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 100
1 µs

10 µs

100 µs 0.5
102

1 ms
0.2
ZthJC[K/W]

10 ms
ID[A]

101 10-1 0.1

DC

0.05

100
0.02

0.01
single pulse
10-1 10-2
10-1 100 101 102 10-6 10-5 10-4 10-3 10-2 10-1 100
VDS[V] tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp ZthJC=f(tp);parameter:D=tp/T

Final Data Sheet 6 Rev.2.1,2020-07-29

 OptiMOSTM3Power-Transistor,75V
BSC036NE7NS3G

Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance
400 12

360 10 V 7V
10
320

280 5V
8

240 6V

RDS(on)[mΩ]
5.5 V
ID[A]

200 6

6V 7V
160

4
120
10 V
5.5 V
80
2

40 5V

4.5 V
0 0
0 1 2 3 0 100 200 300 400
VDS[V] ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance
200 200

160 160

120 120
gfs[S]
ID[A]

80 80

40 40

150 °C
25 °C

0 0
0 2 4 6 8 0 40 80 120 160 200
VGS[V] ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj gfs=f(ID);Tj=25°C

Final Data Sheet 7 Rev.2.1,2020-07-29

 OptiMOSTM3Power-Transistor,75V
BSC036NE7NS3G

Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage
8 4

1100 µA

6 3

110 µA
max
RDS(on)[mΩ]

VGS(th)[V]
4 2

typ

2 1

0 0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
Tj[°C] Tj[°C]
RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS

Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode
4
10 103
25 °C
25 °C, max
Ciss 150 °C
150 °C, max

103 102
Coss
C[pF]

IF[A]

102 101

Crss

101 100
0 15 30 45 60 75 0.0 0.5 1.0 1.5 2.0
VDS[V] VSD[V]
C=f(VDS);VGS=0V;f=1MHz IF=f(VSD);parameter:Tj

Final Data Sheet 8 Rev.2.1,2020-07-29

 OptiMOSTM3Power-Transistor,75V
BSC036NE7NS3G

Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge
2
10 12

40 V
10

20 V
60 V
25 °C 8
100 °C
125 °C

VGS[V]
IAV[A]

101 6

100 0
10-1 100 101 102 103 0 10 20 30 40 50 60 70
tAV[µs] Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms

90

85

80
VBR(DSS)[V]

75

70

65

60
-60 -20 20 60 100 140 180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA

Final Data Sheet 9 Rev.2.1,2020-07-29

 OptiMOSTM3Power-Transistor,75V
BSC036NE7NS3G

5PackageOutlines

Figure1OutlinePG-TDSON-8,dimensionsinmm/inches

Final Data Sheet 10 Rev.2.1,2020-07-29

 OptiMOSTM3Power-Transistor,75V
BSC036NE7NS3G

RevisionHistory
BSC036NE7NS3 G

Revision:2020-07-29,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2020-07-29 Update current rating

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Final Data Sheet 11 Rev.2.1,2020-07-29

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