SDP08N60

S a mHop Microelectronics C orp.

SDF08N60
Ver 2.1

N-Channel Enhancement Mode Field Effect Transistor

PRODUCT SUMMARY FEATURES
Super high dense cell design for low R DS(ON).
V DSS ID R DS(ON) ( Ω) Typ
Rugged and reliable.
600V 8A 0.89 @ VGS=10V TO-220 and TO-220F Package.

G D S G D S G
SDP SERIES SDF SERIES
TO-220 TO-220F
S

ORDERING INFORMATION
Ordering Code Package Marking Code Delivery Mode RoHS Status
SDP08N60HZ TO-220 SDP08N60 Tube Halogen Free
SDP08N60PZ TO-220 08N60 Tube Pb Free
SDF08N60HZ TO-220F SDF08N60 Tube Halogen Free
SDF08N60PZ TO-220F 08N60 Tube Pb Free

ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )

Symbol Parameter SDP08N60 SDF08N60 Units
VDS Drain-Source Voltage 600 V
VGS Gate-Source Voltage ±30 ±30 V
a TC=25°C 8 8 A
ID Drain Current-Continuous
TC=100°C 5.7 5.7 A
IDM -Pulsed a
23 23 A
c
E AS Single Pulse Avalanche Energy 400 mJ
TC=25°C 150 50 W
PD Maximum Power Dissipation
TC=100°C 75 25 W
Operating Junction and Storage
TJ, TSTG -55 to 175 °C
Temperature Range

THERMAL CHARACTERISTICS
R JC Thermal Resistance, Junction-to-Case 1 3 °C/W
R JA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

Details are subject to change without notice. Dec,24,2013

1 www.samhop.com.tw
 SDP08N60
SDF08N60
Ver 2.1

ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )

4 Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 600 V
IDSS Zero Gate Voltage Drain Current VDS=480V , VGS=0V 1 uA
IGSS Gate-Body Leakage Current VGS= ±30V , VDS=0V ±100 nA

ON CHARACTERISTICS
VGS(th) Gate Threshold Voltage VDS=VGS , ID=250uA 2 3 4 V
RDS(ON) Drain-Source On-State Resistance VGS=10V , ID=4A 0.89 1.11 ohm
gFS Forward Transconductance VDS=20V , ID=4A 5.3 S
b
DYNAMIC CHARACTERISTICS
CISS Input Capacitance 1080 pF
VDS=25V,VGS=0V
COSS Output Capacitance 106 pF
f=1.0MHz
CRSS Reverse Transfer Capacitance 10 pF
b
SWITCHING CHARACTERISTICS
tD(ON) Turn-On Delay Time 39 ns
VDD=300V
tr Rise Time ID=1A 18.4 ns
tD(OFF) Turn-Off Delay Time VGS=10V 40 ns
RGEN= 6 ohm
tf Fall Time 15 ns
Qg Total Gate Charge VDS=300V,ID=1A,VGS=10V 13.4 nC
Qgs Gate-Source Charge VDS=300V,ID=1A, 2.9 nC
Qgd Gate-Drain Charge VGS=10V 5.5 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VSD Diode Forward Voltage VGS=0V,IS=3A 0.79 1.4 V

Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12)

Dec,24,2013

2 www.samhop.com.tw
SDP08N60
SDF08N60
Ver 2.1

15 6.0

VG S = 10V

ID, Drain Current(A)

12 4.8
I D, Drain Current(A)

VG S = 7V

9 3.6

6 2.4
VG S = 6V T j=125 C
3 1.2 -55 C
VG S = 5V 25 C

0 0
0 5 10 15 20 25 30 0 1.4 2.8 4.2 5.6 7.0 8.4

VDS, Drain-to-Source Voltage(V) V GS, Gate-to-Source Voltage(V)

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

3.0 3.0

2.5 2.6
R DS(on), On-Resistance

2.0 2.2 V G S =10V

Normalized
R DS(on)( Ω)

I D =4A

1.5 1.8
V G S =10V
1.0 1.4

0.5 1.0

0 0
0.1 3 6 9 12 15 0 25 50 75 100 125 150
T j( C )
I D, Drain Current(A) Tj, Junction Temperature(° C )

Figure 3. On-Resistance vs. Drain Current Figure 4. On-Resistance Variation with Drain
and Gate Voltage Current and Temperature

1.6 1.15
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage

V DS =V G S I D =250uA
1.4 1.10
I D =250uA
BVDSS, Normalized

1.2
Vth, Normalized

1.05
1.0
1.00
0.8
0.95
0.6

0.4 0.90

0.2 0.85
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C )

Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation

with Temperature with Temperature

Dec,24,2013

3 www.samhop.com.tw
SDP08N60
SDF08N60
Ver 2.1

3.0 20.0
I D = 4A

Is, Source-drain current(A)

2.5
10.0
2.0
R DS(on)(Ω)

125 C
5.0 125 C
1.5
75 C
1.0
75 C
25 C
0.5
25 C

0 1.0
0 2 4 6 8 10 0 0.25 0.50 0.75 1.00 1.25

V GS, Gate-to-Source Voltage(V) V SD, Body Diode Forward Voltage(V)

Figure 7. On-Resistance vs. Figure 8. Body Diode Forward Voltage

Gate-Source Voltage Variation with Source Current

2400 10
V GS, Gate to Source Voltage(V)

2000 V DS =300V
8
I D = 1A
C, Capacitance(pF)

1600
6
1200 C is s

4
800
C os s
400 2
C rs s

0 0
0 10 20 30 40 50 0 2 4 6 8 10 12 14 16
VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC)
Figure 9. Capacitance Figure 10. Gate Charge

100 100

it 10 it
0u 10
10 L im 10 L im us
I D , Drain C urrent (A)

s
I D , Drain C urrent (A)

) 1m ) 10
ON
0u
( 10 s ( ON 1m s
DS m DS 10 s
R DC s R ms
DC
1 1

0.1 0.1
VGS=10V VGS=10V
Single Pulse Single Pulse
TC=25 C TC=25 C
0.01 0.01
0.1 1 10 100 1000 0.1 1 10 100 1000

V DS , Drain-S ource V oltage (V ) V DS , Drain-S ource V oltage (V )

Figure 11a. Maximum Safe Operating Figure 11b. Maximum Safe Operating
Area for SDP08N60 Area for SDF08N60

Dec,24,2013

4 www.samhop.com.tw
SDP08N60
SDF08N60
Ver 2.1

V ( BR )D S S
tp

L
V DS

RG D .U .T +
- VDD
IA S
20V
0.0 1
tp
IAS

Unclamped Inductive Test Circuit Unclamped Inductive Waveforms

F igure 12a. F igure 12b.

2
Transient Thermal Impedance

1
r(t),Normalized Effective

D=0.5

0.2

0.1
P DM
0.1
0.05
t1
0.02 t2

0.01 1. R J C (t)=r (t) * R J C

2. R J C =S ee Datas heet
S ingle P uls e 3. T J M-T C = P * R J C (t )
4. Duty C ycle, D=t1/t2

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10

Square Wave Pulse Duration (msec)

Figure 13a. Normalized Thermal Transient Impedance Curve for SDP08N60

1
T ransient T hermal Impedance

D=0.5
r(t),Normalized E ffective

0.2

0.1

0.05 P DM
0.1
0.02 t1
0.01 t2

1. R J C (t)=r (t) * R J C
S ingle P uls e 2. R J C =S ee Datas heet
3. T J M-T C = P * R J C (t )
4. Duty C ycle, D=t1/t2

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10

S quare Wave P uls e Duration (ms ec)

Figure 13b. Normalized Thermal Transient Impedance Curve for SDF08N60
Dec,24,2013

5 www.samhop.com.tw
SDP08N60
SDF08N60
Ver 2.1

Dec,24,2013

6 www.samhop.com.tw
SDP08N60
SDF08N60
Ver 2.1

A1
TO-220F E
Q1 žP A3

Q
D1

L2

b1x3 L1

L bx3

c A2
e
MILLIMETERS
SYMBOL
MIN MAX
A 4.50 4.90
A1 2.35 2.75
A2 2.15 2.92
E1 A3 0.50 0.65
b 0.70 0.90
b1 1.15 1.55
c 0.45 0.70
A D 15.30 16.30
D1 6.67 6.77
E 9.90 10.32
E1 9.20 9.40
e 2.54 REF.
L 9.45 10.05
L1 2.79 3.60
L2 15.60 16.00
Q 3.20 3.40
Q1 6.90 7.10
žP 2.90 3.55

Dec,24,2013

7 www.samhop.com.tw
SDP08N60
SDF08N60
Ver 2.1

TO-220 Tube

Dec,24,2013

8 www.samhop.com.tw
SDP08N60
SDF08N60
Ver 2.1

F Tube

Dec,24,2013

9 www.samhop.com.tw
SDP08N60
SDF08N60
Ver 2.1

TOP MARKING DEFINITION

TO-220 (Halogen Free)

SamHop Logo

SDP08N60 Product No.

XXXXXX

SMC internal code No. (A,B,C...Z)

Wafer Lot Number

Production Date (1,2 ~ 9, A,B...) TO-220 (Pb Free)

Production Month (1,2 ~ 9, A,B,C)

Production Year (2009 = 9, 2010 = A...)

SamHop Logo

PB Free 08N60
Product No. XXXXX

Production Year (2009 = 9, 2010 = A...)

Production Month (1,2 ~ 9, A,B,C)

Production Date (1,2 ~ 9, A,B...)

Wafer Lot Number

Dec,24,2013
10 www.samhop.com.tw
SDP08N60
SDF08N60
Ver 2.1

TOP MARKING DEFINITION

TO-220F (Halogen Free)

SamHop Logo

SDF08N60 Product No.

XXXXXX

SMC internal code No. (A,B,C...Z)

Wafer Lot Number

TO-220F (Pb Free)

Production Date (1,2 ~ 9, A,B...)

Production Month (1,2 ~ 9, A,B,C)

Production Year (2009 = 9, 2010 = A...)

SamHop Logo

PB Free 08N60
Product No. XXXXX

Production Year (2009 = 9, 2010 = A...)

Production Month (1,2 ~ 9, A,B,C)

Production Date (1,2 ~ 9, A,B...)

Wafer Lot Number

Dec,24,2013
11 www.samhop.com.tw