1N5614 thru 1N5622
VOIDLESS-HERMETICALLY-SEALED
STANDARD RECOVERY GLASS
SCOTTSDALE DIVISION
RECTIFIERS
DESCRIPTION APPEARANCE
WWW . Microsemi .C OM
This “standard recovery” rectifier diode series is military qualified to MIL-PRF-
19500/427 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These
devices are also available in surface mount MELF package configurations by
adding a “US” suffix (see separate data sheet for 1N5614US thru 1N5622US).
Microsemi also offers numerous other rectifier products to meet higher and lower
current ratings with various recovery time speed requirements including fast and
ultrafast device types in both through-hole and surface mount packages. “A” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLICATIONS / BENEFITS
• Popular JEDEC registered 1N5614 to 1N5622 series • Standard recovery 1 Amp rectifiers 200 to 1000 V
• Voidless hermetically sealed glass package • Military and other high-reliability applications
• Triple-Layer Passivation • General rectifier applications including bridges, half-
bridges, catch diodes, etc.
• Internal “Category I” Metallurgical bonds
• High forward surge current capability
• Working Peak Reverse Voltage 200 to 1000 Volts. • Extremely robust construction
• JAN, JANTX, JANTXV, and JANS available per MIL- • Low thermal resistance
PRF-19500/427
• Controlled avalanche with peak reverse power
• Surface mount equivalents also available in a square capability
end-cap MELF configuration with “US” suffix (see
• Inherently radiation hard as described in Microsemi
separate data sheet for 1N5614US thru 1N5622US) MicroNote 050
MAXIMUM RATINGS MECHANICAL AND PACKAGING
• •
o o
Junction & Storage Temperature: -65 C to +200 C CASE: Hermetically sealed voidless hard glass with
• Thermal Resistance: 38oC/W junction to lead at 3/8 Tungsten slugs (package dimensions on last page)
inch (10 mm) lead length from body • TERMINATIONS: Axial leads are copper with
• Thermal Impedance: 4.5oC/W @ 10 ms heating time Tin/Lead (Sn/Pb) finish. Note: Previous JANS
• Average Rectified Forward Current (IO): 1.0 Amps @ inventory had solid Silver axial-leads and no finish.
TA = 55ºC and 0.75 Amps @ TA = 100ºC • MARKING: Body paint and part number, etc.
• Forward Surge Current: 30 Amps @ 8.3 ms half-sine • POLARITY: Cathode band
• Solder Temperatures: 260ºC for 10 s (maximum) • TAPE & REEL option: Standard per EIA-296
• WEIGHT: 340 mg
ELECTRICAL CHARACTERISTICS
WORKING MINIMUM AVERAGE FORWARD REVERSE MAXIMUM REVERSE
PEAK BREAKDOWN RECTIFIED VOLTAGE CURRENT SURGE RECOVERY
TYPE REVERSE VOLTAGE CURRENT (MAX.) (MAX.) CURRENT (NOTE 3) 1N5614 – 1N5622
VOLTAGE VRWM VBR @ 50μA IO @ T A VF @ 3A IR @ VRWM IFSM trr
(NOTE 1) (NOTE 2)
VOLTS VOLTS AMPS VOLTS μA AMPS μs
o o o o
55 C 100 C 25 C 100 C
1N5614 200 220 1.00 .750 0.5 25 30 2.0
1N5616 400 440 1.00 .750 0.8 MIN. 0.5 25 30 2.0
1N5618 600 660 1.00 .750 0.5 25 30 2.0
1N5620 800 880 1.00 .750 1.3 MAX. 0.5 25 30 2.0
1N5622 1000 1100 1.00 .750 0.5 25 30 2.0
NOTE 1: From 1 Amp at TA = 55oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC,
derate linearly at 7.5 mA/oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal
resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175 oC.
NOTE 2: TA = 100oC, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals
NOTE 3: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A
Copyright © 2007 Microsemi
1-15-2007 REV C Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N5614 thru 1N5622
VOIDLESS-HERMETICALLY-SEALED
STANDARD RECOVERY GLASS
SCOTTSDALE DIVISION
RECTIFIERS
WWW . Microsemi .C OM
SYMBOLS & DEFINITIONS
Symbol Definition
VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
VRWM
temperature range
Average Rectified Output Current: Output Current averaged over a full cycle with a 50 hZ or 60 Hz sine-wave
IO
input and a 180 degree conduction angle
VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
IR
temperature
C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
Reverse Recovery Time: The time interval between the instant the current passes through zero when
trr changing from the forward direction to the reverse direction and a specified decay point after a peak reverse
current occurs.
GRAPHS
1N5614 – 1N5622
FIGURE 1 FIGURE 2
TYPICAL FORWARD VOLTAGE vs FORWARD CURRENT TYPICAL REVERSE CURRENT vs PIV
Copyright © 2007 Microsemi
1-15-2007 REV C Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N5614 thru 1N5622
VOIDLESS-HERMETICALLY-SEALED
STANDARD RECOVERY GLASS
SCOTTSDALE DIVISION
RECTIFIERS
WWW . Microsemi .C OM
FIGURE 3 FIGURE 4
MAXIMUM POWER DISSIPATION MAXIMUM CURRENT vs LEAD TEMPERATURE
vs LEAD TEMPERATURE
PACKAGE DIMENSIONS
1N5614 – 1N5622
Dimensions: Inches/[mm]
NOTE: Lead tolerance = +0.003/-0.004 inches
Copyright © 2007 Microsemi
1-15-2007 REV C Page 3
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
