SJ MOSFET Structure and

Coss Hysteresis - key

considerations for MOSFET
choice in power converters
Farhan Beg

EMEA Industrial Technical Marketing

12th March 2024

 Agenda

#1 An overview of ST Superjunction MOSFET portfolio and our development roadmap

#2 Superjunction MOSFET structure and the source of nonlinear Coss

#3 Coss hysteresis and its impact on LLC converter performance

An overview of the ST Superjunction MOSFET
portfolio and our development roadmap
 Current energy trends

More energy with less More performance with

resources less energy

More mobility with More connectivity with

less pollution less hassle

4
 Broad range of ST POWER technologies
Silicon products Wide-bandgap products

Superjunction MOSFETs IGBTs SiC FETs Power GaN HEMT

(250 V to 1700 V) (600 V to 1700 V) (650 V to 1700 V) (100 V, 650 V)

LED
Gaming & Power Supply Air-conditioning Washing Power Supply Lighting UPS
UPS
Adapter Machine

LED Solar Solar Industrial

Induction Solar
Lighting Inverter Inverter Motor EV Charger Power Supply
Heating Inverter

Charging
DC-DC, OBC Traction Thermal Systems Traction DC-DC, OBC Adapter DC-DC, OBC
Station

Industrial Automotive

5
 A silicon MOSFET portfolio
enabling transformation in the energy sector
Current silicon MOSFETs offer and roadmap from 40 V to 1700 V

DM2 DM6 DM9 Higher power level and better efficiency

Increased power density with the best

K5 K6 RDS(on) x area

Increasing high power density and

M5 M9 compactness system.

40V-100V Low Voltage Trench MOSFETs

F7 F8 complementing the HV Portfolio

Wide and innovative packaging offer

SMD Through-hole
PowerFlat
5x6/HV TO-LL

SOT223-2L PowerFlat PowerFlat

TO220-FP TO247-4L
5x6 DI 2x2

Top side cooling

HU3PAK ACEPACK SMIT

 High-voltage MOSFETs
superjunction MDmesh series
MDmesh series
M2 M6 M5 M9 DM2 DM6 DM9 K5/DK5 - K6
400 V - 600 V - 400 V - 650 V 600 V - 650 V 800 V - 1700 V
550 V - 650 V 250 V - 65 0V 400 V - 650 V
650 V 650 V

Focus topology
High power CCM High power PFC,
PFC, Flyback, Half bridge, Full bridge,
Flyback, PFC,
LLC, ZVS soft switching
Flyback, Totem pole PFC ZVS soft switching, inverters Flyback topology
Totem pole PFC (Low freq. sw. leg),
(Low freq. sw. leg) Soft switching, LLC

Focus applications
Server Telecom Industrial Lighting PC gaming

* is a registered and/or unregistered trademark of STMicroelectronics International NV or its affiliates in the EU and/or elsewhere.
 ST MDmesh technology evolution
RDson x area (normalized)
1.2

0.8

0.6

80%
0.4 Improvement in
specific RDSon

0.2

0
MDmesh MDmesh II MDmesh II i MDmesh M2 MDmesh M6 MDmesh M5 MDmesh M9

2005 2009 2013 2016 2009 2022

15 mΩ 13 mΩ
40 mΩ 36 mΩ
Lowest RDSon Devices Max Max
TO247 TO247
TO-247 TO-247
 MDmesh M9/DM9 series
250 V / 600 V / 650 V
Medium voltage MDmesh M9/DM9 superjunction MOSFET for the most efficient applications

Latest impressive ultra low FoM (RDS(on) x Qg) enables increased power
levels and higher power density for more compact solutions

Step forward in hard and soft switching and improved system

ruggedness with fast embedded diode

Telecom / data centers

Solar and energy storage system
 Comparison of main parameters
MDmesh M6 vs M5 vs M9
Parameters M6 M5 M9
RDS(on) reduction -10% vs M2 - 36% vs M2 -35% vs M5

4V typ, 4V typ, 3.7V typ,

Vgs(th) 1.5V spread 1.5V spread 1V spread

Vgs max rating ±25 V ±25 V ±30 V

Static dv/dt 100 [V/ns] 50 [V/ns] 120 [V/ns]

Diode dynamic dv/dt 15 [V/ns] 15 [V/ns] 50 [V/ns]

10
 MDmeshTM M9/DM9
best technology for high power & high efficiency energy systems
2.5 kW PFC working in continuous current mode - based on L4984 controller

Syst em Pow er Ef f iciency

97.6%
97.4%
Input voltage: • Output voltage: 97.2% M9
145 V AC 400 V DC 97.0%
96.8%
96.6% Competitor
• SiC diode used 96.4%

Switching as boost diode 96.2%

96.0%
frequency: 60 kHz 0 500 1000 1500 2000 2500 3000
• Pout: 2.5 kW Power Out [W]

M9 advantages STW65N023M9 Competitor

Key applications 20%
20%

5%
• Server and UPS systems • Despite higher RDSon, better 13%
• Telecom power electrical performances 3% 75%
64%
• Renewable energy • Lower switching losses
Pcond Psw Pcoss Pdriver Psaved
• EV charging stations • Save energy
Competitor STW65N023M9
BVdssmin (V) 650 650
RDS(on)max (mΩ) 19 23
VGSthtyp (V) 3.5 3.7 11
Superjunction MOSFET structure and source of
Nonlinear Coss
 Superjunction structure
overcomes theoretical limits of silicon
Planar MOSFET Superjunction MOSFET Material limit lines

Gate Gate

Metal Metal
Source
Source

n+ n+ n+ n+
p Body p Body n+ n+ n+ n+
p p

p+ p+

n-

n-

n+ Substrate
n+ Substrate

Drain Drain

The P column acts as

Increase in thickness of the
charge balancing structure This allows for the
epi results in an increase in
and allows for increase in Superjunction MOSFETs
the breakdown voltage. An
the doping concentration to cross the theoretical Si
increase in the doping
of the Epi without limit line based on the
leads to a reduction in the
reduction in breakdown Balega FOM graph.
breakdown voltage.
voltage.
13
Key MOSFET characteristics for power converters

Static and dynamic dv/dt Ruggedness in non-std. operation

Low Irrm, trr and Qrr Inverter efficiency and EMI

Low Qg High freq. operation

Optimized Coss Power efficiency at light load*

* In hard switching topologies.. However, in Soft switching topologies the impact can be noticed over the entire load range.
 Nonlinear output capacitance (Coss) variation in
superjunction MOSFETs

Capacitance is inversely
proportional to d

Gate S

p d d
n
n

D
Increasing VDS
Source of Coss hysteresis and its impact on LLC
converter performance
 LLC Converter
to measure true dissipated switching losses
• Input voltage: 400 V ±1% • Efficiency (at maximum load):
80
≥95%
• Rated output power: 1500 W 70
• Resonant frequency: 102.73 kHz

Temperature [°C]
•
60
Output voltage: 48 V ±1%
50

Conduction losses Diode losses Turn off losses Gate drive losses 40

30

Id 20

10

Vds 0
0 200 400 600 800 1000 1200 1400 1600
Output Power [W]

· ,! " , ·# , ,! "
$% · #% · & ' Package Temperature Calculated Temp. TO-247
, ,

, calculated using measured values of voltage and current with oscilloscope is not entirely dissipated

Only part of this energy is dissipated… Why?

,
10
!( )*++ x -.,(/0 !012
 LLC Converter
Role of MOSFET Coss in ensuring ZVS
S1
• By turning off the HS MOSFET, an energy
exchange between the HS Coss and LS Coss is
initiated.
S2
• On completion of energy exchange, the body
diode of the LS MOSFET is forward biased and
conducts to guarantee ZVS turn-on of the LS
MOSFET

TD

Channel
 Non-Ideality of COSS
Coss hysteresis
Gate

Metal
Source

Coss charge and discharge is not ideal. n+ n+

p p
n+ n+

p+ p+

n-

n+ Substrate

Drain

(*) “Coss Hysteresis in Advanced Superjunction MOSFETs”, J. B.

Fedison, M. J. Harrison, Enphase Energy Inc., APEC 2016, © IEEE
19
 Measuring power losses due to Coss Hysteresis
Method A – Shorted GS, case temp. Method B – Sawyer Tower method

VDS
Inductor low-side
Current

.
Schematic of the resonant half-bridge test circuit Sawyer-Tower circuit used to measure output capacitance, COSS of the DUT.

Device 1 Device 2 Device 1 Device 2

400
400
VDS
low-side 300
300

VDS [V]

VDS [V]
200
200
Inductor A1 A2
Current 100 100

QOSS [C]
0 0 QOSS [C]
2E-08 2.5E-08 3E-08 3.5E-08 4E-08 4.5E-08 5E-08 2E-08 3E-08 4E-08 5E-08
T1 T2 Oscilloscope capture for Device A being measured in the Sawyer-Tower test setup with the
oscilloscope in XY mode where X represents the output charge and Y represents the drain-
to-source voltage of the MOSFET under test.

T1 > T2 A1 > A2
 Evaluation of losses due to Coss 25
Method A – Measuring case temperature
STP36N60M6 Competitor 1 Competitor 2 Competitor 3 Competitor 4
TO-220 TO-220 TO-220 TO-220 TO-220
BVdss (V) 600 600 600 600 600
RDS(on)max (mΩ) 99 99 99 88 104
Vbus=300V
F=550KHz DUT with no heat sink VGSthtyp (V) 4 3.5 3 3.2 3

To be able to identify the case’s temperature of each device we consider a minimum delta of 2ºC
accordingly with the used thermal camera resolution.

73 °C 69 °C 30 °C 30 °C 30 °C

∆T = 43°C ∆T = 39°C
Competitor 3 Competitor 1 Competitor 4 Competitor 2 STP36N60M6

Average of the Tcase values measured on two couples of the same p/n
 LLC Converter
MOSFET Coss hysteresis during dead time
MDmesh M9 MDmesh M6 Competition
technology technology device

Area 1.3 µJ Area 1.2 µJ Area 4.6 µJ

Channel

Energy
Energy
exchange is
exchange is very
very inefficient
efficient
 Evaluation board
600 W LLC converter in open loop config
23

STPS30L45CT
TO-220

Low drop power schottky

rectifier
TO-220FP

TO-247

STGAP2S Vin (V) Vout (V) Ron (Ω ) Roff (Ω) DT (ns)

High voltage half-bridge driver 400 12 39 11 400

 Performance in an LLC converter
MDmesh M6 shows the best efficiency and temp.
System Power Efficiency High Side Package Temperature
93.5% 60.0

93.0% 55.0

92.5% 50.0
Power Eff. (%)

Temp. (°C)
92.0% 45.0

91.5% 40.0

91.0% 35.0

90.5% 30.0

90.0% 25.0
0 50 100 150 200 250 300 350 400 450 500 550 600 650 0 50 100 150 200 250 300 350 400 450 500 550 600 650
Pout (W) Pout (W)
STP36N60M6 Competitor 1 Competitor 2 Competitor 3 Competitor 4 STP36N60M6 Competitor 1 Competitor 2 Competitor 3 Competitor 4

STP36N60M6 Competitor 1 Competitor 2 Competitor 3 Competitor 4

The M6 MOSFET is the best choice for high performance
TO-220 TO-220 TO-220 TO-220 TO-220
BVdss (V) 600 600 600 600 600
RDS(on)max (mΩ) 99 99 99 88 104
TO-220 package without HS used VGSthtyp (V) 4 3.5 3 3.2 3

* Datasheet values
26
 Summary
ST has a very wide and state of the art superjunction portfolio

The MdmeshTM M9 is one of our latest release with state of the art performance in hard
switching topologies

The output capacitance Coss of a MOSFET shows a non linear behaviour across the
drain to source voltage

The MdmeshTM M6 with its low parasitics and optimized output capacitance Coss profile
shows the best performance in an LLC converter as compared to the other MOSFETs
available in the market.
 Thank you

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