Slide 21 MOSFETs
MOSFETs have characteristics similar to JFETs and additional characteristics that make
then very useful.
There are 2 types:
• Depletion-Type MOSFET
• Enhancement-Type MOSFET
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Slide 22 Depletion-Type MOSFET Construction
The Drain (D) and Source (S) connect to the to n-doped regions. These N-doped regions
are connected via an n-channel. This n-channel is connected to the Gate ((G)) via a thin
insulating layer of SiO2. The n-doped material lies on a p-doped substrate that may have an
additional terminal connection called SS.
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Digital Electronics Upper Saddle River, New Jersey 07458
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Slide 23 Basic Operation
A Depletion MOSFET can operate in two modes: Depletion or Enhancement mode.
mode
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Slide 24 Depletion-type MOSFET in Depletion Mode
Depletion mode
The characteristics are similar to the JFET.
When VGS = 0V, ID = IDSS
When VGS < 0V, ID < IDSS
The formula used to plot the Transfer Curve still applies:
ID = IDSS(1−
VGS 2
)
[Formula 5.3]
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Digital Electronics Upper Saddle River, New Jersey 07458
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Slide 25 Depletion-type MOSFET in Enhancement Mode
Enhancement mode
VGS > 0V, ID increases above IDSS
The formula used to pplot the
VGS 2
Transfer Curve still applies: ID = IDSS(1− ) [Formula 5.3]
VP
(note that VGS is now a positive polarity)
Robert Boylestad Copyright ©2002 by Pearson Education, Inc.
Digital Electronics Upper Saddle River, New Jersey 07458
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Slide 26 p-Channel Depletion-Type MOSFET
The p-channel
Th h l Depletion-type
D l i MOSFET iis similar
i il to the
h n-channel
h l except that
h the
h voltage
l
polarities and current directions are reversed.
Robert Boylestad Copyright ©2002 by Pearson Education, Inc.
Digital Electronics Upper Saddle River, New Jersey 07458
All rights reserved.
Slide 27 Symbols
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Digital Electronics Upper Saddle River, New Jersey 07458
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Slide 28 Specification Sheet
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Slide 29 Enhancement-Type MOSFET Construction
The Drain (D) and Source (S) connect to the to n-doped regions. These n-doped regions
are connected via an n-channel. The Gate (G) connects to the p-doped substrate via a thin
i l i layer
insulating l off SiO2. There
Th is i no channel.
h l The
Th n-doped
d d materiali l lies
li on a p-doped
d d
substrate that may have an additional terminal connection called SS.
Robert Boylestad Copyright ©2002 by Pearson Education, Inc.
Digital Electronics Upper Saddle River, New Jersey 07458
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Slide 30 Basic Operation
The Enhancement-type MOSFET only operates in the enhancement mode.
mode
VGS is always positive
As VGS increases, ID increases
But if VGS is kept constant and VDS is increased, then ID saturates (IDSS)
The saturation level,
level VDSsat is reached.
reached
V Dsat = VGS −VT [Formula 5.12]
Robert Boylestad Copyright ©2002 by Pearson Education, Inc.
Digital Electronics Upper Saddle River, New Jersey 07458
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Slide 31 Transfer Curve
To determine ID given VGS: I D = k (VGS −VT ) 2 [Formula 5.13]
where VT = threshold voltage or voltage at which the MOSFET turns on.
k = constant
t t found
f d in
i the
th specification
ifi ti sheeth t
k can also be determined by using values at a specific point and the formula:
ID(on) [Formula 5.14]
k=
(VGS(ON) − VT) 2
VDSsat can also be calculated:
V Dsat = VGS −VT [Formula 5.12]
Robert Boylestad Copyright ©2002 by Pearson Education, Inc.
Digital Electronics Upper Saddle River, New Jersey 07458
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Slide 32 p-Channel Enhancement-Type MOSFETs
The p-channel Enhancement-type MOSFET is similar to the n-channel except that the
voltage polarities and current directions are reversed.
Robert Boylestad Copyright ©2002 by Pearson Education, Inc.
Digital Electronics Upper Saddle River, New Jersey 07458
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Slide 33 Symbols
Robert Boylestad Copyright ©2002 by Pearson Education, Inc.
Digital Electronics Upper Saddle River, New Jersey 07458
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Slide 34 Specification Sheet
Robert Boylestad Copyright ©2002 by Pearson Education, Inc.
Digital Electronics Upper Saddle River, New Jersey 07458
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Slide 35 MOSFET Handling
MOSFETs are very static sensitive. Because of the very thin SiO2 layer between the
external terminals and the layers of the device, any small electrical discharge can stablish
an unwanted conduction.
Protection:
• Always transport in a static sensitive bag
• Always wear a static strap when handling MOSFETS
• Apply voltage limiting devices between the Gate and Source, such as back-to-
back Zeners to limit any transient voltage.
Robert Boylestad Copyright ©2002 by Pearson Education, Inc.
Digital Electronics Upper Saddle River, New Jersey 07458
All rights reserved.
Slide 38 Summary Table
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