Physics Passing Package
Physics Passing Package
ELECTROSTATICS
1. Write the Properties of electric charges.
i) Charges possessed additive property. [Q = q1 + q2 + q3 …….. ]
ii) Charges are quantized , (Q = ± 𝑛𝑛e) :
iii) Charges are conserved [Charges can never be created nor destroyed.
2. State and explain Coulomb’s law of electrostatics or Inverse square law
This law states that “The force of attraction or repulsion between two point
stationary charges is directly proportional to the product of the magnitude of charges
and inversely proportional to square of the distance between them”.
F12 F21
Q1 Q2
d
Q1Q2
i.e. F∝ d2
Q1Q2
F=K d2
∴
1 Q1 Q2
F= x
4𝜋𝜋 ℰ0 d2
|E1| = |E2|
Field at ‘P’ due to the dipole is
EB = Ecosθ + Ecosθ = 2Ecosθ
1 𝑞𝑞 𝑎𝑎
EB = 2x x x cosθ cos θ =
4πℰ0 (𝑑𝑑 2 +𝑎𝑎 2 ) (𝑑𝑑 2 +𝑎𝑎 2 )1/2
1 2𝑞𝑞 𝑎𝑎
EB = x x
4πℰ0 (𝑑𝑑 2 +𝑎𝑎 2 ) (𝑑𝑑 2 +𝑎𝑎 2 )1/2
1 𝑃𝑃
EB = 4πℰ0
x (𝑑𝑑 2 +𝑎𝑎 2 )3/2
along PR ∥el to axis
Directed from +ve charge towards –ve charge of dipole.
When a <<d, a2 can be neglected.
𝟏𝟏 𝐏𝐏 →
EB = x 𝒅𝒅𝟑𝟑 or → 1 𝑃𝑃
𝟒𝟒𝟒𝟒𝓔𝓔𝟎𝟎
𝐸𝐸𝐵𝐵 4πℰ0 x 𝑑𝑑 3
=
Q P B dx A
D
x - dx
x
Force acting on unit +ve charge (Q0) at A due to charge ‘Q’ is given by
1 𝑄𝑄𝑄𝑄0
F= x Q0 = 1 C
4𝜋𝜋ℰ0 𝑥𝑥 2
1 Q
F= x
4𝜋𝜋ℰ0 𝑥𝑥 2
Work done in moving a unit +ve charge from A to B against the field direction is
given by, dw = - F x dx
1 Q
dw = - x 2 dx
4𝜋𝜋ℰ0 𝑥𝑥
|||ly Work done in bringing a unit +ve charge from ∞ to the point ‘ P ’ against the
field direction is given by
d 1 1
∫ dw = - Q ∫∞ 4𝜋𝜋ℰ 𝑥𝑥 2
0
1 d 1
w= - xQ ∫∞ 𝑥𝑥 2 dx
4𝜋𝜋ℰ0
1 1 d
w= - xQ -
4𝜋𝜋ℰ0 𝑥𝑥
∞
1 1 1
W=- xQ - +∞
4𝜋𝜋ℰ0 𝑑𝑑
1 𝑄𝑄
W= x
4𝜋𝜋ℰ0 𝑑𝑑
By def W = V, Potential
∴
𝟏𝟏 𝑸𝑸
V= x
𝟒𝟒𝝅𝝅𝓔𝓔𝟎𝟎 𝒅𝒅
10. Expression for electric potential energy of a system of two point charges
in the absence of electric field.
∴ U= 1 x
𝑄𝑄1 𝑄𝑄2
4𝜋𝜋ℰ0 𝑑𝑑
Electric potential energy = U.
d = distance between two charges
11. Mention an expression for electrostatic potential energy of a
dipole placed in an uniform electric field.
U = - PE cos θ
Where, U = Electric potential energy
P = dipole moment
E = Electric field applied
12. What are polar and non polar molecules? Give examples.
1) Polar molecules :
Molecules in which centers of +ve and –ve charge concentration are
separated by a small distance are called polar molecules.
They have permanent dipole moment.
Ex: NH3 , H2O, CO etc.
2) Non-polar molecules:
In non-polar molecules the centers of +ve and –ve charge distributions
coincide.
They have no no permanent dipole moment.
Ex: O2, N2, H2 CO2 etc.
13. Mention the expression for capacitance of parallel plate capacitor and
explain the terms used.
C=
𝑄𝑄 ℰ0 𝐴𝐴 𝑄𝑄
= By definition, = C capacitance
𝑉𝑉 𝑑𝑑 𝑉𝑉
∴ 𝓔𝓔𝟎𝟎 𝑨𝑨
C=
𝒅𝒅
This is the expression for capacitance of parallel plate capacitor with air as
dielectric.
𝑄𝑄 1 1
= Q +
𝐶𝐶𝑠𝑠 𝐶𝐶1 𝐶𝐶2
∴
= +
Cp = C1 + C2
1 𝑄𝑄
W= ∫0 𝑞𝑞 . 𝑑𝑑𝑑𝑑 [∫q.dq = [q1 + 1/(1+1)] = [q2 / 2 ]
𝐶𝐶
1 𝑞𝑞 2
W= � �
𝐶𝐶 2
By definition , W = U (energy)
U = Q2/2 C = ½ C V2 [Q = CV]
U = ½ C V2 𝑄𝑄 2
Or U = ½ 𝐶𝐶
= ½ QV
CURRENT ELECTRICITY
1. State and explain Ohm’s law
This law states that, the current flowing through a conductor is directly proportional to the
potential difference between the ends of the conductor. Provided temperature and other physical
conditions of the conductor remaining constant”
𝐼𝐼 ∝ 𝑉𝑉
1
𝐼𝐼 = 𝑅𝑅 𝑉𝑉
𝑽𝑽 = 𝑰𝑰𝑰𝑰
2. Define (a) Drift velocity (b) Mobility
Drift velocity: The average velocity with which free electrons get drifted towards the positive end of
conductor (or opposite to the electric field) under the influence of an external electric field is called
drift velocity.
Mobility: It is defined as the ratio of magnitude of drift velocity per unit electric field.
|𝑣𝑣𝑑𝑑 |
𝜇𝜇 =
𝐸𝐸
3. Mention an expression for Drift velocity in terms of electric current
and explain the terms used.
𝑰𝑰
Vd =
𝒏𝒏 𝑨𝑨 𝒆𝒆
Where, n = number density of electrons
A = Area of cross section of conductor
Vd = Drift velocity of electrons
Let I be the current in the conductor due to the potential difference 𝑉𝑉 across the conductor, then
according to ohm’s law
𝑉𝑉 = 𝐼𝐼𝐼𝐼 ………….(i)
The electric field 𝐸𝐸 produced in the conductor is given by
𝑉𝑉
𝐸𝐸 =
𝐿𝐿
∴ 𝑉𝑉 = 𝐸𝐸𝐿𝐿 ………….(ii)
From (i) and (ii) we get
𝐸𝐸𝐸𝐸 = 𝐼𝐼𝐼𝐼
𝐿𝐿 𝐿𝐿
𝐸𝐸𝐸𝐸 = 𝐼𝐼 × 𝜌𝜌 ( 𝑅𝑅 = 𝜌𝜌 )
𝐴𝐴 𝐴𝐴
𝐼𝐼
𝐸𝐸𝐸𝐸 = 𝜌𝜌𝜌𝜌𝜌𝜌 ( = 𝐽𝐽 )
𝐴𝐴
𝐸𝐸 = 𝜌𝜌𝜌𝜌
𝐸𝐸 1
𝐽𝐽 = 𝜌𝜌 ( = 𝜎𝜎)
𝜌𝜌
���⃗𝑱𝑱 = 𝝈𝝈𝑬𝑬
�⃗ → This is the vector form of ohm’s law.
2) In semiconductors
Rs = R1 + R2
= =
10. Obtain an expression for effective emf and internal resistance Cell in parallel.
I = I1 + I2
𝐸𝐸1 𝑉𝑉 𝐸𝐸2 𝑉𝑉
I= - 𝑟𝑟 + - 𝑟𝑟
𝑟𝑟1 1 𝑟𝑟2 2
𝐸𝐸 𝐸𝐸 1 1
I = 𝑟𝑟1 + 𝑟𝑟2 -v 𝑟𝑟1
+ 𝑟𝑟
1 2 2
Currents flowing through different branches of the bridge will be as shown in the
figure.
Applying K.C.L to the junction A, I = I1 + I2 --------------(1)
Applying K.V.L to the mesh ABDA , I1P + IgG – I2R = 0 -------(2)
Applying K.V.L to the mesh BCDB , (I1 – Ig)Q – (I2 + Ig)S – IgG = 0
I1Q – IgQ – I2S - IgS – IgG = 0 -------(3)
Condition for balance: the current through galvanometer is zero (Ig = 0).
∴ P/Q=R/S
This equation represents the balanced condition for wheat stone network.
𝒏𝒏𝒆𝒆𝟐𝟐 𝝉𝝉
14. Obtain an Expression for conductivity (𝝈𝝈 = ) of a conductor.
𝒎𝒎
𝒏𝒏𝒆𝒆𝟐𝟐 𝝉𝝉
𝝈𝝈 = → This is the expression for conductivity
𝒎𝒎
4. Draw a neat labeled diagram of cyclotron and write any two applications of Cyclotron.
dB = µ0 . I d l sin θ
4π d2
It will be along the perpendicular to the plane containing the point and the element.
7. Derive an expression for magnetic field at a point along the axis of circular coil carrying
current.
Magnetic field produced at P due to current in the element is given by Biot Savart’
𝜇𝜇 𝐼𝐼 𝑑𝑑𝑑𝑑 𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠
dB = 4𝜋𝜋0 2 θ = 900 , sin θ = 1
𝑟𝑟
𝜇𝜇 0 𝐼𝐼 𝑑𝑑𝑑𝑑
dB =
4𝜋𝜋 𝑟𝑟 2
dB is resolved into two components as dB cosθ along the axis and dB sinθ ⊥ to the axis.
Magnetic field produced at P due to current in the full loop is given by
∑ 𝒅𝒅𝒅𝒅 = ∑ 𝒅𝒅𝒅𝒅 𝐜𝐜𝐜𝐜𝐜𝐜 𝜽𝜽
𝜇𝜇 0 𝐼𝐼 𝑑𝑑𝑑𝑑 𝜇𝜇 0 𝐼𝐼
B=∑ cos 𝜃𝜃 = cos 𝜃𝜃 ∑ 𝑑𝑑𝑑𝑑 (∑ 𝑑𝑑𝑑𝑑 = 2πR )
4𝜋𝜋 𝑟𝑟 2 4𝜋𝜋 𝑟𝑟 2
𝜇𝜇 0 𝐼𝐼
B= 2 cos 𝜃𝜃 x 2πR In ∆ OAP, cos θ = R/r
4𝜋𝜋 𝑟𝑟
r = R + x2 => r = (R2 + x2) ½
2 2
𝜇𝜇 0 𝐼𝐼 𝑅𝑅
B= 2 x x 2πR ... r3 = (R2 + x2) 3/2
4𝜋𝜋 𝑟𝑟 𝑟𝑟
𝜇𝜇 0 𝐼𝐼
B= 3 2πR2
4𝜋𝜋 𝑟𝑟
𝝁𝝁𝟎𝟎 𝑰𝑰
B= 𝟑𝟑 2 π R2 along the axis towards the observer
𝟒𝟒𝟒𝟒
(𝑹𝑹𝟐𝟐 + 𝒙𝒙𝟐𝟐 )𝟐𝟐
𝝁𝝁𝟎𝟎 𝐧𝐧 𝐈𝐈
At the centre of the coil , B =
𝟐𝟐 𝑹𝑹
8. Write any three Properties of Magnetic field lines:
1. No two magnetic field lines can intersect each other.
2. The magnetic field lines will be parallel and equidistant in a uniform magnetic field.
3. The magnetic field lines will be more crowded where the strength of the field is more.
9. Derive an expression for force between two parallel current carrying conductor.
Magnetic field produced by current I1 on the conductor Q is given by
B1 = µ0 . 2 I1
4π d
The conductor Q carrying current I2 in the magnetic field B1
experiences a mechanical force F1 is given by
F1 = B1 I2 L sin θ If θ = 900
F1 = B1 I2 L towards the conductor P
F1 = µ0 . 2 I1 . I2 L ------------------(1)
4π d
ly
||| , conductor P experiences mechanical force F2 given by
F2 = µ0 . 2 I2 . I1 L ------------------(2) towards the conductor Q.
4π d
From equations (1) and (2)
It is found that F1 and F2 are equal and opposite.
The conductors attract each other when they carry current in same direction.
They repel each other when they carry current in opposite direction.
S = Ig . G
I - Ig
R=V - G
Ig
14. Define the earth’s magnetic elements declination, dip and Horizontal component.
Declination (δ): The angle between geographic meridian and magnetic meridian at
the place is called declination at the place.
Dip ( θ): The angle made by the direction of earth’s magnetic field B with the
horizontal along the magnetic meridian at the place is called ‘dip’ at the
plane.
Horizontal component (BH) : The resolved component of the earth’s magnetic
field B along the horizontal in the magnetic meridian is called horizontal
component of earth’s magnetic field.
15. Show that Bar magnet as an equivalent solenoid.
dw = + L x I dI
Total work done in establishing the current I is given by
I
𝐼𝐼 𝐼𝐼 𝐼𝐼2 1
∫ 𝑑𝑑𝑑𝑑 = ∫𝑜𝑜 𝐼𝐼 𝑑𝑑𝑑𝑑 = 𝐿𝐿 ∫𝑜𝑜 𝐼𝐼𝐼𝐼𝐼𝐼 = 𝐿𝐿
2
= L I2
2
O
1
W= L I2
2
By definition, W = U U= L
AC Circuits:
4) Expression for Current in an AC circuit containing pure resistance only :
Let us consider an AC circuit in which a pure resistance R connected in series with a source of
alternating voltage.
Let V = V0 sin ωt ----------(1) is the applied AC voltage
Where, V0 is the peak value of voltage and w is the angular velocity. w = 2πf
Due to the applied AC voltage, A current flows in the circuit this current is given by,
I = V / R = V0 (sin ωt ) ---------(2)
R
Current is maximum when sin wt = ± 1, that current is called ‘peak value of current and is denoted
as I0 .
... I 0 = V0 / R
(2) becomes , I = I0 sin ωt - ------------(3)
This is the expression for current in pure resistance circuit.
And V1 = - L . dI
dt
Applying KVL for the circuit , we get
V + V1 = 0 (. . . R = 0 , IR = 0)
V = L . dI
dt
V0 sin ωt = L . dI
dt
dI = V0 sin ωt . dt
L
Integrating we get,
∫ dI = ∫ (V0 / L) sin ωt . dt
I = V0 ∫ sin ωt . dt
L
I = V0 [- cos ωt / w]
L
I = V0 . sin (ωt - π/2) - cos ωt = sin (ωt - π/2)
ωL
Current is maximum when sin (wt - π/2) = ± 1 ,
that current is called as ‘peak value of current and it is denoted as I0.
I0 = V0 / ω L when sin (wt - π/2) = ± 1
V2 = I2 [ R2 + (XL – XC)2 ] VL V
V2 / I2 = R2 + (XL – XC) 2 VL - VC
Z2 = R2 + (XL – XC)2 Φ
O A
Where, Z = V / I , impedance of the circuit Vc VR X
...
Z = √ R2 + (XL – XC)2 C
𝑽𝑽𝒓𝒓𝒓𝒓𝒓𝒓
Irms =
�𝑹𝑹𝟐𝟐 + (𝑿𝑿𝑳𝑳 − 𝑿𝑿𝑪𝑪 )𝟐𝟐
Working:
As input is alternating, at every alteration magnetic flux linking
round the secondary changes. Therefore an emf of the same
nature is induced in the secondary. The magnitude of output
voltage depends on number of turns in primary and secondary
coils.
Let Vp and Vs are the input and output voltages. np and ns be
the number of turns in primary and secondary.
f=R/2
Let ‘P’ be the pole , ‘C’ be the centre of curvature and ‘R’ be the radius of curvature of a small
aperture spherical refracting surface.
PM PM
In triangle OMR, 𝑖𝑖 = + ,
PO PC
PM PM
In triangle MCI, = 𝑟𝑟 +
PC PI
PM PM
But , 𝑟𝑟 = −
PC PI
By snell’s law,
𝑛𝑛1 sin 𝑖𝑖 = 𝑛𝑛2 sin 𝑟𝑟
𝑛𝑛1 𝑖𝑖 = 𝑛𝑛2 𝑟𝑟
PM PM PM PM
𝑛𝑛1 � PO + PC
� = 𝑛𝑛2 �
PC
− PI
�
𝑛𝑛 1 𝑛𝑛 1 𝑛𝑛 2 𝑛𝑛 2
+ = −
𝑃𝑃𝑃𝑃 𝑃𝑃𝑃𝑃 𝑃𝑃𝑃𝑃 𝑃𝑃𝑃𝑃
𝑛𝑛 1 𝑛𝑛 1 𝑛𝑛 2 𝑛𝑛 2
− + = −
𝑢𝑢 𝑅𝑅 𝑅𝑅 𝑣𝑣
𝒏𝒏𝟐𝟐 𝒏𝒏𝟏𝟏 𝒏𝒏𝟐𝟐 −𝒏𝒏𝟏𝟏
∴ − =
𝒗𝒗 𝒖𝒖 𝑹𝑹
𝟏𝟏 𝟏𝟏 𝟏𝟏
= � 𝟏𝟏𝒏𝒏𝟐𝟐 − 𝟏𝟏� �𝑹𝑹 − 𝑹𝑹 � This is lens makers formula
𝒇𝒇 𝟏𝟏 𝟐𝟐
If we replace the system of two lenses by a thin lens of focal length F, such that it
forms the image of object O at I, then we have
1 1 1
- 𝑢𝑢 = 𝐹𝐹 ----------------- (4)
𝑣𝑣
Comparing equations (3) and (4)
1 1 1
We get, = +
𝐹𝐹 𝑓𝑓1 𝑓𝑓2
n = sin (A + D) / 2
sin A / 2
WAVE OPTICS
1. Define Wavefront:
A wavefront is defined as the continuous locus of all the particles which are
vibrating in the same phase.
2. What is an Interference ?
Modification (redistribution) in the intensity of light (energy) when two or more similar light
waves travelling in the same direction super impose on each other is called ‘Interference’.
3. Write any two conditions for sustained interference.
1) The two sources must be coherent
2) Two sources must be very narrow
4. Give the THEORY OF INTERFERENCE :
Let us consider two light waves of same angular frequency ‘ω’ traveling in a medium in the
same direction.
Let a1 and a2 be their amplitudes. The displacement of the particles of the medium, due to
these waves is given by
y1 = a1 sin ωt
y2 = a2 sin (ωt + δ)
where ‘δ’ is the phase difference between the waves.
, the resultant displacement of the particles of a medium is given by,
y = y1 + y2
y = a1 sin ωt + a2 sin (ωt + δ)
y = a1 sin ωt + a2 sin ωt cos δ + a2 sin δ cos ωt1 ,
y = (a1 + a2 cos δ) sin ωt + a2 sin δ. cos ωt1 , ……………(1)
Let R cos θ = a1 + a2 cos δ …………….(2)
R sin θ = a2 sin δ ………………..(3)
Substituting (2) and (3) in (1) we get
y = R cos θ. Sin ωt + R sin θ cos ωt
y = R [sin (ωt + θ)]
‘R’ is the resultant amplitude and ‘θ’ is the phase difference between the resultant
wave and the first wave.
Squaring and adding (2) and (3)
R2 cos2 θ + R2 sin2 θ = a12 + a22 cos2 δ + 2 a1 a2 cos δ + a22 sin2δ.
R2 (cos2 θ + sin2 θ) = a12 + a22 (cos2 δ + sin2δ) + 2 a1 a2 cos δ
R2 = a12 + a22 + 2 a1 a2 cos δ [... cos2 θ + sin2 θ = 1]
𝑑𝑑 2
For bright band, S2 P − S1 P = 𝑛𝑛𝑛𝑛 = 𝐷𝐷 2 + �𝑥𝑥 − �
2
𝑥𝑥𝑥𝑥
𝑛𝑛𝑛𝑛 =
D
𝑛𝑛𝑛𝑛𝑛𝑛
𝑥𝑥𝑛𝑛 =
𝑑𝑑
𝜆𝜆𝜆𝜆
𝑥𝑥𝑛𝑛 +1 = (𝑛𝑛 + 1)
𝑑𝑑
𝜆𝜆𝜆𝜆
𝜔𝜔 = 𝑥𝑥𝑛𝑛 +1 − 𝑥𝑥𝑛𝑛 = (𝑛𝑛 + 1) − 𝑛𝑛
𝑑𝑑
𝝀𝝀𝝀𝝀
𝝎𝝎 = 𝒅𝒅
8. What is Diffraction?
The phenomenon of light waves bending round the corners is called ‘Diffraction’.
INTERFERENCE DIFFRACTION
2. The modification in the intensity when 1. The phenomenon of light waves bending
two similar light waves traveling in round the corners or obstacles, is called
same direction super impose on each diffraction.
other is called interference. 2. It is produced due to the superposition of
3. It is produced due to superposition of no. of secondary waves of same sources.
two waves from two coherent sources. 3. Diffraction pattern consists of central
4. Interference pattern consists of alternate bright band bordered by alternate dark
bright and dark band. and bright band of decreasing intensity.
5. Interference bright bands are of equal 4. Diffraction bright bands are of unequal
thickness and intensity. thickness and intensity.
6. Interference dark bands are perfectly 5. Diffraction dark bands are of unequal
dark and of equal thickness. thickness and intensity.
POLARIZATION
Polarisation: The phenomenon in which vibrations of a beam of light is restricted
to a single plane is called polarisation.
OR . . . . . . .
. . . . . . . . Or
r = 900 - ip
n = tan ip
Hence, the Brewster’s law.
sin r = cos ip
sin r = sin (90 – ip)
.’. r = 90 - ip
ip + r = 900
.’. The reflected ray and refracted ray will be perpendicular to each other.
3. Write the Applications of Polaroid’s.
1) They are used as sun glasses.
2) They are used as polarizers.
3) They are used as analyser.
4) They are used to view 3d pictures.
4. State and explain Malus Law:
According to Malus : When a completely plane polarised light beam is incident
on a polarising sheet the intensity of the emergent light varies as the square of
the cosine of the angle between the direction of electric field vector of the
incident light and the polarising direction of the sheet.
φ0 = hυ0
λ = h / mv
Observations :
(i) Most of α-particles pass through the gold foil undeflected.
(ii) A very small number of α-particles (1 in 8000 )suffered large angle deflection.
(iii) Some of them retraced their original path or suffered 180° deflection.
ii) Quantum Condition : Electron revolves around the nucleus only in those orbits
ℎ
for which the angular momentum is some integral multiple of
2𝜋𝜋
𝑛𝑛 ℎ
(That is L = 2 𝜋𝜋 (L = mvr)
iii) Transitions: Electron emits energy only when they jumps from stationary orbit of higher
energy level to lower energy level.
i.e. h 𝝂𝝂 = E2 – E1 .
1 Ze 2
mv2 = � �� � --------- (1)
4πε0 𝑟𝑟
(2) ÷ (1) ⇒
𝑚𝑚 2 𝑣𝑣 2 𝑟𝑟 2 𝑛𝑛 ℎ 2 2
4πε r
𝑚𝑚 𝑣𝑣 2
= � 4𝜋𝜋 2 � � Ze 02 � (For hydrogen z = 1)
2 2
r = ε𝜋𝜋𝜋𝜋
0 𝑛𝑛 ℎ
𝑒𝑒 2
This is the expression for the radius of an electron in the nth orbit of hydrogen atom.
𝑒𝑒 2
E=- ε𝟎𝟎 𝒏𝒏𝟐𝟐𝒉𝒉𝟐𝟐
8𝜋𝜋𝜖𝜖 0
𝝅𝝅𝝅𝝅𝒆𝒆𝟐𝟐
En = - m Z2e4
8 Є02 n2 h2
3. Isotones:
The nuclei containing the same number of neutrons are called isotones.
Ex: i) 1H3, 2He4
12. What is Half life period? Obtain the relation between half life and decay constant.
Half life of a radioactive material is defined as the time during which half the number
of atoms present initially in the sample of the element disintegrates.
It is denoted by ‘T’ and is given by , T = 0.693 / λ
Where λ is decay constant of element.
N0 / 2 = N0 e - λT
½ = 1 / e λT
e λT = 2
taking log on both sides
. T = 0.693
. . λ
Ex: z X A β- Z+1 Y A
90 Th234 β– 91 Pa 234
2) When a radioactive element emits β+ (positron), the new element has got the
same mass number but atomic number decreases by 1. It falls in a group 1
column to the left of the parent element in the periodic table.
Ex: z X A β+ Z-1 Y A
i) 15P30 β+ 14 Si30
SEMICONDUCTOR ELECTRONICS
1. Explain the Energy Band in solids.
In solids, atoms will be closely packed. Therefore electron in any orbit will be influenced by
surrounding atoms. This range of energy possessed by the electrons is called as energy band , this
theory is called as band theory of solids.
Energy band: The range of energy possessed by the electrons is called as energy band.
Energy bands are formed due to the continous energy variation in different energy levels.
Valence band (V.B) : The range of energy possessed by valence electrons (outer most electrons) is
called valence band, this band may be half filled or completely filled but never be empty.
Conduction band (C.B): The range of energy possessed by conduction electron (free electron) is
called as conduction band. It may be half filled, completely filled or it may be empty.
Energy gap (Eg) : The minimum energy required for shifting electrons from valence band
to conduction band is called energy gap.
The energy gap for different materials is different.
Eg = 0 for conductors., Eg = 0.7 ev – 1.1 ev for semiconductors
Eg = 5 ev - 10 ev for insulators.
2. Explain the Classification of Solids on the basis of energy bands into conductors,
semiconductors
and insulators :
Sl.
No Conductors Semiconductors Insulators
1 Conductivity is very high Conductivity is between less Conductivity is negligible
than that of conductors
2 Resistivity is very low Resistivity is more than Resistivity is very large
conductors
3 Temperature co-efficient Temperature co-efficient of Temperature coefficient of
of resistance is positive resistance of a Sc is negative resistance is slightly
for conductor. and large. negative.
4 Type of bonding present is Type of bonding present is Type of bonding present is
metallic bonding Covalent ionic. (or covalent)
1) Majority charge carriers are electrons. 1) Majority charge carriers are holes.
2) Minority charge carriers are holes. 2) Minority charge carriers are electrons.
3) Produced by adding pentavalent impurities 3) They are produced by adding trivalent impurities
4) Donor impurity level lies very close to 4) Acceptor impurity level lies very close to valence
conduction band band
Ex: Ge doped with Arsenic Ex: Ge doped with Indium
Diode is said to be forward biased when p-side of the diode is connected to positive of the battery and n-side
of diode is connected to negative of the battery.
Positive of the battery attracts electron from n-side to p-side through the junction, negative of the battery
attracts holes from p-side to n-side through the junction therefore thickness of depletion layer decreases, its
resistance decreases and conductivity increases, it conducts current. A diode conducts current when it is
forward biased.
6. Explain the Action of diode when reverse biased.
Diode is said to be reverse biased when p-side is connected to negative of the battery and n-side is connected
to positive of the battery. The positive of the battery attracts electrons directly from n-side. Negative of the
battery attracts holes directly from p-side, thickness of depletion layer increases. Its resistance increases and
conductivity decreases therefore it does not conduct current.
6. Explain the working of half-wave Rectifier with its waveform.
A half wave rectifier is one in which rectification is done for only one half cycle of input AC.
A full wave rectifier is one in which rectification is done for the complete (both) cycle of input Ac.
Working:
(i) During positive half cycle of input AC , A is +ve and B is –ve hence diode D1 is forward
biased and D2 is reverse biased, D1 only conducts current. Current flows through the
load resistance in the direction D1 RL T there will be output voltage across the load
résistance.
(ii) During negative half cycle of input AC, A is –ve and B is +ve hence diode D2 is forward
biased and D1 is reverse biased. Diode D2 only conducts current. A current flows
through the load resistance in the direction D2 RL T. There will be voltage across the load
resistance.
In both the cases current flows in the same direction through the load resistance. Therefore output is
DC and steady. This process is called as “full wave rectification”.
Working:
Case (i) : If the input DC voltage increases,
The current through RS and zener diode also increases.
This increases the voltage drop across RS without change in
the voltage across zener diode.
This is because in the breakdown region, zener voltage
remains constant even though the current through the diode changes.
Case (ii) : Similarly if the input DC voltage decreases,
The current through RS and zener diode also decreases. This decreases the voltage drop across RS
without change in the voltage across zener diode. This is because in the breakdown region, zener
voltage remains constant even though the current through the diode changes.
Thus in both the cases voltage across the zener diode remains constant and also the output voltage
across RL remains constant at VZ.
Hence Zener diode acts as a voltage regulator.
9. What is Light emitting diode (LED)? Write any two applications of LED.
An LED is a p-n junction diode which converts electrical energy to light energy.
Applications of LED’s:
1) They are used as optical fibre transmitter.
2) They are used for message display in railway station, bus stand, and airport.
3) Infrared LED’s are used in burglar alarm system and TV remote control.
10. What is Photo diode? Write any two applications of photodiode.
A Photo diode is a p-n junction diode which converts light energy to electrical energy.
Applications:
1) These photodiodes are used in computers and in films.
2) They are used in camera light meters and clock radios.
3) They are used to measurement of intensity of light in camera.
11. What is Solar Cell diode? Write any two applications of it.
A solar cell is a junction diode which converts solar energy into electrical energy.
Applications:
1. They are used in Solar water heaters, solar power supplies.
2. Solar cells are used in satellites to recharge their batteries.
12. Write the circuit symbol and truth table for OR gate.
A B y=A+B
0 0 0
1 0 1
0 1 1
1 1 1
13. Write the circuit symbol and truth table for AND gate.
A B y =A.B
0 0 0
1 0 0
0 1 0
1 1 1
14. Write the circuit symbol and truth table for NOR gate.
A B y (A + B = y)
0 0 1
1 0 0
0 1 0
1 1 0
15. Write the circuit symbol and truth table for NAND gate.
A B
y (y = A.B)
0 0 1
1 0 1
0 1 1
1 1 0