SKiiP 23NAB12T4V1
Absolute Maximum Ratings
Symbol Conditions Values Unit
Inverter - IGBT
VCES Tj = 25 °C 1200 V
IC λpaste=0.8 W/(mK) Ts = 25 °C 37 A
Tj = 175 °C Ts = 70 °C 30 A
IC λpaste=2.5 W/(mK) Ts = 25 °C 41 A
Tj = 175 °C Ts = 70 °C 34 A
ICnom 25 A
MiniSKiiP® 2 ICRM ICRM = 3 x ICnom 75 A
VGES -20 ... 20 V
VCC = 800 V
tpsc VGE ≤ 15 V Tj = 150 °C 10 µs
VCES ≤ 1200 V
Tj -40 ... 175 °C
SKiiP 23NAB12T4V1 Chopper - IGBT
VCES Tj = 25 °C 1200 V
IC λpaste=0.8 W/(mK) Ts = 25 °C 37 A
Features Tj = 175 °C Ts = 70 °C 30 A
• Trench 4 IGBTs
IC λpaste=2.5 W/(mK) Ts = 25 °C 41 A
• Robust and soft freewheeling diodes in
Tj = 175 °C Ts = 70 °C 34 A
CAL technology
• Highly reliable spring contacts for ICnom 25 A
electrical connections ICRM ICRM = 3 x ICnom 75 A
• UL recognised: File no. E63532
VGES -20 ... 20 V
Typical Applications* VCC = 800 V
• Inverter up to 14 kVA tpsc VGE ≤ 15 V Tj = 150 °C 10 µs
• Typical motor power 7,5 kW VCES ≤ 1200 V
Tj -40 ... 175 °C
Inverse - Diode
Remarks
VRRM Tj = 25 °C 1200 V
• Max. case temperature limited to
TC=125°C IF λpaste=0.8 W/(mK) Ts = 25 °C 32 A
• Product reliability results valid for Tj = 175 °C Ts = 70 °C 26 A
Tj≤150°C (recommended IF λpaste=2.5 W/(mK) Ts = 25 °C 35 A
Tj,op=-40...+150°C) Tj = 175 °C Ts = 70 °C 28 A
• Please refer to MiniSKiiP “Technical
Explanations” and “Mounting IFnom 25 A
Instructions” for further information IFRM IFRM = 3 x IFnom 75 A
IFSM tp = 10 ms, sin 180°, Tj = 150 °C 100 A
Tj -40 ... 175 °C
Freewheeling - Diode
VRRM Tj = 25 °C 1200 V
IF λpaste=0.8 W/(mK) Ts = 25 °C 32 A
Tj = 175 °C Ts = 70 °C 26 A
IF λpaste=2.5 W/(mK) Ts = 25 °C 35 A
Tj = 175 °C Ts = 70 °C 28 A
IFnom 25 A
IFRM IFRM = 3 x IFnom 75 A
IFSM tp = 10 ms, sin 180°, Tj = 150 °C 100 A
Tj -40 ... 175 °C
NAB
© by SEMIKRON Rev. 4.0 – 18.09.2017 1
SKiiP 23NAB12T4V1
Absolute Maximum Ratings
Symbol Conditions Values Unit
Rectifier - Diode
VRRM Tj = 25 °C 1600 V
IF λpaste=0.8 W/(mK) Ts = 25 °C 52 A
Tj = 150 °C Ts = 70 °C 39 A
IF λpaste=2.5 W/(mK) Ts = 25 °C 58 A
Tj = 150 °C Ts = 70 °C 44 A
IFnom 13 A
MiniSKiiP® 2 IFSM 10 ms Tj = 25 °C 370 A
sin 180° Tj = 150 °C 270 A
2
It 10 ms Tj = 25 °C 685 A2s
sin 180° Tj = 150 °C 365 A2s
Tj -40 ... 150 °C
SKiiP 23NAB12T4V1 Module
It(RMS) Tterminal = 80 °C, 20 A per spring 40 A
Tstg -40 ... 125 °C
Features Visol AC sinus 50 Hz, 1 min 2500 V
• Trench 4 IGBTs
• Robust and soft freewheeling diodes in Characteristics
CAL technology
• Highly reliable spring contacts for
Symbol Conditions min. typ. max. Unit
electrical connections Inverter - IGBT
• UL recognised: File no. E63532 VCE(sat) IC = 25 A Tj = 25 °C 1.85 2.10 V
VGE = 15 V
Typical Applications* chiplevel Tj = 150 °C 2.25 2.45 V
• Inverter up to 14 kVA VCE0 Tj = 25 °C 0.80 0.90 V
• Typical motor power 7,5 kW chiplevel
Tj = 150 °C 0.70 0.80 V
rCE VGE = 15 V Tj = 25 °C 42 48 mΩ
Remarks chiplevel Tj = 150 °C 62 66 mΩ
• Max. case temperature limited to VGE(th) VGE = VCE V, IC = 1 mA 5 5.8 6.5 V
TC=125°C
ICES VGE = 0 V, VCE = 1200 V, Tj = 25 °C 0.1 0.3 mA
• Product reliability results valid for
Tj≤150°C (recommended Cies f = 1 MHz 1.43 nF
VCE = 25 V
Tj,op=-40...+150°C) Coes f = 1 MHz 0.12 nF
VGE = 0 V
• Please refer to MiniSKiiP “Technical Cres f = 1 MHz 0.09 nF
Explanations” and “Mounting
QG VGE = - 8 V...+ 15 V 142 nC
Instructions” for further information
RGint Tj = 25 °C 0 Ω
td(on) VCC = 600 V Tj = 150 °C 28 ns
tr IC = 25 A Tj = 150 °C 40 ns
RG on = 24 Ω
Eon Tj = 150 °C 2.65 mJ
RG off = 24 Ω
td(off) Tj = 150 °C 295 ns
tf Tj = 150 °C 68 ns
Eoff VGE = +15/-15 V Tj = 150 °C 2.3 mJ
Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 1.2 K/W
Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 1 K/W
NAB
2 Rev. 4.0 – 18.09.2017 © by SEMIKRON
SKiiP 23NAB12T4V1
Characteristics
Symbol Conditions min. typ. max. Unit
Chopper - IGBT
VCE(sat) IC = 25 A Tj = 25 °C 1.85 2.10 V
VGE = 15 V
chiplevel Tj = 150 °C 2.25 2.45 V
VCE0 Tj = 25 °C 0.80 0.90 V
chiplevel
Tj = 150 °C 0.70 0.80 V
rCE VGE = 15 V Tj = 25 °C 42 48 mΩ
chiplevel Tj = 150 °C 62 66 mΩ
MiniSKiiP® 2 VGE(th) VGE = VCE V, IC = 1 mA 5 5.8 6.5 V
ICES VGE = 0 V, VCE = 1200 V, Tj = 25 °C 0.1 0.3 mA
QG VGE = - 8 V...+ 15 V 142 nC
RGint Tj = 25 °C 0 Ω
td(on) VCC = 600 V Tj = 150 °C 28 ns
SKiiP 23NAB12T4V1 tr IC = 25 A Tj = 150 °C 40 ns
RG on = 24 Ω
Eon Tj = 150 °C 2.65 mJ
RG off = 24 Ω
td(off) Tj = 150 °C 295 ns
Features tf Tj = 150 °C 68 ns
• Trench 4 IGBTs
• Robust and soft freewheeling diodes in Eoff VGE = +15/-15 V Tj = 150 °C 2.3 mJ
CAL technology
• Highly reliable spring contacts for Rth(j-s) per IGBT, λpaste=0.8 W/(mK) 1.2 K/W
electrical connections Rth(j-s) per IGBT, λpaste=2.5 W/(mK) 1 K/W
• UL recognised: File no. E63532
Inverse - Diode
Typical Applications* VF = VEC IF = 25 A Tj = 25 °C 2.41 2.74 V
• Inverter up to 14 kVA VGE = 0 V
chiplevel Tj = 150 °C 2.45 2.79 V
• Typical motor power 7,5 kW
VF0 Tj = 25 °C 1.30 1.50 V
chiplevel
Remarks Tj = 150 °C 0.90 1.10 V
• Max. case temperature limited to rF Tj = 25 °C 44 50 mΩ
chiplevel
TC=125°C Tj = 150 °C 62 68 mΩ
• Product reliability results valid for IRRM IF = 25 A Tj = 150 °C 24 A
Tj≤150°C (recommended Qrr di/dtoff = 850 A/µs T = 150 °C 3.7 µC
j
Tj,op=-40...+150°C) VGE = -15 V
• Please refer to MiniSKiiP “Technical Err VCC = 600 V T j = 150 °C 1.6 mJ
Explanations” and “Mounting Rth(j-s) per Diode, λpaste=0.8 W/(mK) 1.52 K/W
Instructions” for further information Rth(j-s) per Diode, λpaste=2.5 W/(mK) 1.29 K/W
Freewheeling - Diode
VF = VEC IF = 25 A Tj = 25 °C 2.41 2.74 V
VGE = 0 V
chiplevel Tj = 150 °C 2.45 2.79 V
VF0 Tj = 25 °C 1.30 1.50 V
chiplevel
Tj = 150 °C 0.90 1.10 V
rF Tj = 25 °C 44 50 mΩ
chiplevel
Tj = 150 °C 62 68 mΩ
IRRM IF = 25 A Tj = 150 °C 24 A
Qrr di/dtoff = 850 A/µs T = 150 °C 3.7 µC
j
VGE = -15 V
Err VCC = 600 V T j = 150 °C 1.6 mJ
Rth(j-s) per Diode, λpaste=0.8 W/(mK) 1.52 K/W
Rth(j-s) per Diode, λpaste=2.5 W/(mK) 1.29 K/W
NAB
© by SEMIKRON Rev. 4.0 – 18.09.2017 3
SKiiP 23NAB12T4V1
Characteristics
Symbol Conditions min. typ. max. Unit
Rectifier - Diode
VF = VEC IF = 13 A Tj = 25 °C 1.00 1.21 V
VGE = 0 V
chiplevel Tj = 125 °C 0.90 1.10 V
VF0 Tj = 25 °C 0.88 0.98 V
chiplevel
Tj = 125 °C 0.73 0.83 V
rF Tj = 25 °C 9.2 18 mΩ
chiplevel
Tj = 125 °C 13 21 mΩ
MiniSKiiP® 2 Rth(j-s) per Diode, λpaste=0.8 W/(mK) 1.25 K/W
Rth(j-s) per Diode, λpaste=2.5 W/(mK) 1.06 K/W
Module
Ms to heat sink 2 2.5 Nm
w 55 g
SKiiP 23NAB12T4V1 LCE - nH
Temperature Sensor
1670 ±
Features R100 Tr = 100 °C
3%
Ω
• Trench 4 IGBTs R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)2
• Robust and soft freewheeling diodes in R(T) ], A = 7.635*10-3 °C-1,
CAL technology B = 1.731*10-5 °C-2
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Typical Applications*
• Inverter up to 14 kVA
• Typical motor power 7,5 kW
Remarks
• Max. case temperature limited to
TC=125°C
• Product reliability results valid for
Tj≤150°C (recommended
Tj,op=-40...+150°C)
• Please refer to MiniSKiiP “Technical
Explanations” and “Mounting
Instructions” for further information
NAB
4 Rev. 4.0 – 18.09.2017 © by SEMIKRON
SKiiP 23NAB12T4V1
Fig. 1: Typ. output characteristic Fig. 2: Typ. rated current vs. temperature IC = f(TS)
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
© by SEMIKRON Rev. 4.0 – 18.09.2017 5
SKiiP 23NAB12T4V1
Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. input bridge forward characteristic
6 Rev. 4.0 – 18.09.2017 © by SEMIKRON
SKiiP 23NAB12T4V1
pinout, dimensions
pinout
© by SEMIKRON Rev. 4.0 – 18.09.2017 7
SKiiP 23NAB12T4V1
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.
8 Rev. 4.0 – 18.09.2017 © by SEMIKRON
