EE212 Electronics I Midterm Exam
EE212
- Electronics I -
Midterm Exam
Instructor: M. Zübeyir Ünlü, PhD
[email protected] Midterm Exam # 1 1
EE212 Electronics I Midterm Exam Question # 1
Question #1:
Plot vO for the circuit in figure for the
input shown for the two cases:
(a) Vγ = 0 V.
(b) Vγ = 0.7 V.
Midterm Exam # 1 2
EE212 Electronics I Midterm Exam Question # 2
Question #2:
(a) Sketch vo versus time for the circuit in figure. The
input is a sine wave given by vi = 10 sinωt V.
Assume Vγ = 0.7 V.
(b) Determine the rms value of the output voltage.
Midterm Exam # 1 3
EE212 Electronics I Midterm Exam Question # 3
Question #3:
Consider the circuit in figure. Let Vγ = 0.
a) Plot vO versus vI over the range −10 ≤ vI ≤ +10 V.
b) Plot i1 over the same input voltage range as in part
(a).
Midterm Exam # 1 4
EE212 Electronics I Midterm Exam Question # 4
Question #4: In the circuit in figure, the transistor
parameters are VTN = 0.8 V and Kn = 0.5 mA/V2. Calculate
VGS, ID, and VDS.
Note: For n-Channel Enhancement-Mode MOSFET
The region for which vDS < vDS(sat) is known as the nonsaturation or
triode region. The ideal current–voltage characteristics in this region
are described by the equation iD = Kn 2(vGS − VTN) vDS − v2DS
In the saturation region, the ideal current–voltage characteristics for
vGS > VT N are described by the equation iD = Kn(vGS − VT N)2
Midterm Exam # 1 5
EE212 Electronics I Midterm Exam Question # 5
Question #5: The transistor in the circuit in figure has parameters
VTP = −0.8 V and Kp = 0.20 mA/V2. Sketch the load line and plot the
Q-point for VDD = 5 V, RD = 4 kΩ. What is the operating bias region?
Note: For p-Channel Enhancement-Mode MOSFET
The saturation point is given by vSD(sat) = vSG + VTP.
For the p-channel device biased in the nonsaturation region, the
current is given by iD = Kp [ 2(vSG + VTP) vSD − v2SD]
In the saturation region, the current is given by iD = Kp(vSG + VTP)2
Midterm Exam # 1 6
