[Year]

[BASIC ELECTRICAL ELECTRONICS

ENGINEERING LABORATORY]
Department of Electronics & Communication Engineering
Gauhati University Institute of Science & Technology
Gopinath Bordoloi Nagar, Guwahati-781014
 :Basic Electrical Electronics Engineering Laboratory:
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INDEX
Expt. No. Title of Experiment

1 Study of Resistors and Inductors

2 Measurement of Voltage and current in a Circuit.

3 Application of KCL and KVL

4 Application of Current Division and Voltage Division rule

5 Verification of Superposition Theorem

6 Verification of Reciprocity Theorem

7 Verification of Thevenin’s Theorem

8 Verification of Norton's Theorem

9 P-N junction Diode Characteristics.

10 Zener Diode Characteristics.

11 Transistor (CB mode) Characteristics

12 Transistor (CE mode) Characteristics

13 Transistor as a switch and inverter

14 FET Characteristics

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Experiment No: 1

Title: Study of Resistors and Inductors.

Aim of the experiment: To determine resistance values of resistors using colour code.

Apparatus / Components Required:

1. Resistors. 2. Multimeter

Theory: Resistance is the property of a substance which opposes the flow of current through it.
The resistance of element is denoted by the symbol “R”. It is measured in ohms (Ω).
Resistances are of two types,
a) Fixed Resistance,
b) Variable Resistance.

Fixed resistors come in a variety of different shapes, sizes and forms. Axial lead resistors have
the value of resistance printed on them or as a colour code. Surface mount resistors have a
numerical code indicating a value. All resistors have a tolerance value.

Determination of resistances by colour code:

The resistance value could be stamped or painted on the body of the through-hole resistor, but
the numbers would be quite small and difficult to read. Also, the markings would easily rub off
or become smeared with time. Therefore the resistors are given a band of colours called as colour
code. Practically the value of a resistance can be found form its colour code. Practically colour
codes are found in the form of four or five bands.
:Colour code Table:
Colour Value Multiplier Tolerance
Black 0 0 -
Brown 1 1 ±1%
Red 2 2 ±2%
Orange 3 3 ±0.05
Yellow 4 4 -
Green 5 5 ±0.5%
Blue 6 6 ±0.25%
Violet 7 7 ±0.1%
Gray 8 8 -
White 9 9 -
Gold - -1 ±5%
Silver - -2 ±10%

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Four colour band resistor:

Example 1:
(Brown=1),(Black=0),(Orange=3),
10 x 103 = 10KΩ, Tolerance (Gold) = ±5%
10KΩ ± 10KΩ × 5/100 = 9.5KΩ - 10.5KΩ

The 4-band code is used for marking low precision resistors with 5%, 10% and 20% tolerances.

• The first two bands represent the most significant digits of the resistance value. Colors
are assigned to all the numbers between 0 and 9, and the color bands basically translate
the numbers into a visible code. Black is 0, brown is 1, red is 2 and so on (see the color
code table). So, for example, if a resistor has brown and red as the first two bands, the
most significant digits will be 1 and 2, therefore the value is 12.

• The third band indicates the multiplier determines the power of ten to which the two
significant digits must be multiplied (or how many zeros to add), using the same assigned
value for each color as in the previous step. For example, if this band is red (2), we have
to multiply it by 102 = 100 (or add 2 zeros). So, for the resistor we used in the previous
example, the value would be: 12 x 100 = 1200Ω (1.2kΩ).
Note: If the multiplier band is gold or silver, the decimal point is moved to the left by one
or two places (divided by 10 or 100).

• The tolerance band (the deviation from the specified value) is next, usually spaced away
from the others, or it's a little bit wider. A color is assigned to each tolerance: gold is 5%,
silver is 10%. 20% resistors have only 3 color bands - the tolerance band is missing.

• If we consider the four bands are respectively A,B,C,T then the resistance value is given
by the formulla, ( AB × 10C ) ± ( AB × 10C ) × T/100

Five colour band resistor:

Example 2:
(Yellow=4),(Violet=7),(Black=0),(Red=2),
470 x 102 = 47KΩ, Tolerance (Brown) = ±1%
47KΩ ± 47KΩ × 1/100=46.53KΩ - 47.47KΩ

The 5 band code is used for marking high quality, precision resistors with 2%, 1% or lower
tolerances. The rules are similar to the previous system; the only difference is the number of digit
bands. The first 3 bands will represent the value, the 4th band will be the multiplier and the 5th

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stripe will give us the tolerance. Five bands are respectively A, B, C, D, T then the resistance
value is given by the formula, (ABC × 10D) ± (ABC × 10D) × T/100

Operation of DMM: Digital multimeter (DMM) is used as Ohmmeter to measure the resistance
of a resistor. Signals are input to the DMM through two leads (red for positive, and black for
negative), and then the value measured is displayed. While measuring resistance the DMM
works as an ohmmeter. An ohmmeter sends out a current and measures the voltage produced
across the DUT. Because the ohmmeter is ultimately measuring a voltage, it should be connected
in parallel with the DUT. When measuring a resistance, one end of the resistor should be
disconnected from the circuit so that all of the current from the DMM’s current source is passing
through the resistor to be measured.

Inductor: An inductor is characterized by its inductance, which is the ratio of the voltage to the
rate of change of current. In the International System of Units (SI), the unit of inductance is the
henry (H). In the measurement of magnetic circuits, it is equivalent to weber/ampere. Inductors
have values that typically range from 1 µH (10−6 H) to 20 H. Many inductors have a magnetic
core made of iron or ferrite inside the coil, which serves to increase the magnetic field and thus
the inductance. Inductors are widely used in alternating current (AC) electronic equipment,
particularly in radio equipment. They are used to block AC while allowing DC to pass; inductors
designed for this purpose are called chokes.

Inductor value identification using colour code:

The colour coding system for inductors is very similar to that of resistors, especially in case of
molded inductors. This colour coding is in accordance with the color code table. Starting from
the band closest to the one end, this color code sequence is identified. 4-band and 5-band color
coding methods are described below with examples.

:Colour code Table:

Colour Value Multiplier Tolerance
Black 0 0 -
Brown 1 1 ±1%
Red 2 2 ±2%
Orange 3 3 ±0.05
Yellow 4 4 -
Green 5 5 ±0.5%
Blue 6 6 ±0.25%
Violet 7 7 ±0.1%
Gray 8 8 -
White 9 9 -
Gold - -1 ±5%
Silver - -2 ±10%

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Four colour band inductor: The figure shows the

4-band inductor consisting four different color
bands. Similar to the resistor coding, first and
second color bands represents the first and
second digits of the value, third color band is the
multiplier and fourth band is the tolerance.
Therefore, the value of inductor can be
determined by reading the colors of inductor body
and comparing them with color code chart. The
result of this color coded value is in the unit of
micro Henry (µH).

If we consider the four bands are respectively A, B,

C, T then the inductance value is given by the
formula, (AB × 10-C ) ± (AB × 10-C ) × T/100

The error can be calculated as,

Th − Pr
% Error = 100
Th

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Experimental data for resistor:

Colour Code of Resistance Observed

Value
Colour 1 Colour 2 Colour 3 Colour 4 Tolerance

Five band (ABC×10D)±T%

Four band (AB×10C)±T%
(A) (B) (C) (D) Colour (T)
Sl
No

Theoretical value
.

Practical value

% Error
Colour

Colour

Colour

Colour

Colour
Value

Value

Value

Value

Value
1.

2.

10.

Experimental data for inductor:

Colour Code of Resistance

Colour 1 Colour 2 Colour 3 Colour 4 Tolerance

Theoretical value

(A) (B) (C) (D) Colour (T)

Sl Observed Range
No
(AB×10C) ± T%
Colour

Colour

Colour

Colour

Colour
Value

Value

Value

Value

Value

1.

2.

3.

Result/Conclusion:

Remarks/Precaution:

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Experiment No: 2(a)

Title: Measurement of Voltage in a Circuit.

Aim of the experiment: To measure voltage across different resistances using Voltmeter.

Apparatus Required: Components Required:

1. DC power Supply (30V, 1A) 1. Resistors

2. Multimeter 2. Single Strand hook-up wire
3. Bread board. 3. Connecting Wires

Theory: The circuit diagram used for measuring the voltage across different resistances is given
below:

Fig 2.1.1: Circuit Diagram for use of a Voltmeter Fig: 2.1.2: Experimental Circuit Diagram
R234
Voltage drop VCD is given by, VCD = VS
R1 + R234 , where R234=R2||(R3+R4)

R3
Voltage drop VR3 is given by, VR3 = VCD
R3 + R4

R4
Voltage drop VR4 is given by, VR 4 = VCD
R3 + R4

For measuring voltage drop across resistances voltmeters are connected in parallel with the
resistors.

Operation of DMM: Digital multimeter (DMM) is used as Voltmeter to measure the voltage
drop. Signals are input to the DMM through two leads (red for positive, and black for negative),

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and then the value measured is displayed. While measuring voltage using a DMM it must be
connected in parallel to a resistance (Figure 2.1.1). There are two primary reasons behind it.
First, is to ensure that the voltage across the device under test (DUT) is the same as the voltage
across the DMM used here as a voltmeter. Second, the DMM as a voltmeter has a very high in-
built resistance, so when connected in parallel across a resistance to measure voltage across it
will generate an equivalent resistance closer to the resistance under test.

Th − Pr
% Error = 100
Th

Procedure:

1. Take resistances R1 and R2 such that R1>100Ω and R2=10R1 and R3 & R4 are taken
arbitrarily maintaining R3 + R4 > 100Ω.
2. Connect the circuit as per circuit diagram with VS=10V DC supply.
3. Calculate the voltages VCD, VR3 and VR4 theoretically.
4. Examine the voltages VCD, VR3 and VR4 using voltmeter.
5. Repeat the procedure for different values of R3 & R4.

Experimental data:

Input Voltage (VS) =10V, R1= , R2=

Sl. Resistances VCD (Volts) VR3 (Volts) VR4 (Volts)

No. used
R3 R4 Th. Pr. %error Th. Pr. %error Th. Pr. %error
1
2
3
4
5

Result/Conclusion:

Remarks/Precaution:

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Experiment No: 2(b)

Title: Measurement of current in a Circuit.

Aim of the experiment: To measure current across different branches using Ammeter.

Apparatus Required: Components Required:

1. DC power Supply (30V, 1A) 1. Resistors
2. Multimeter 2. Single Strand hook-up wire
3. Bread board. 3. Connecting Wires

Theory: The circuit diagram used for measuring the current across different branches is given
below:

Fig 2.2.1: Circuit Diagram for use of an Ammeter Fig 2.2.2: Experimental Circuit Diagram
VS  ( R + R4 )  R2 
I= Req =  R1 + 3 
Overall Current,
Req where,
 ( R3 + R4 ) + R2 

( R3 + R4 )
I1 = I
R2 + R3 + R4

R2
I2 = I
R2 + R3 + R4

From the above relations determine the value of I, I1 and I2

For measuring current across branches ammeter are connected in series with the resistors. i.e. the
current flows through the ammeter.

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Operation of DMM: Digital multimeter (DMM) is used as Ammeter to measure the current flow
in a circuit. Signals are input to the DMM through two leads (red for positive, and black for
negative), and then the value measured is displayed. While measuring current the DMM must be
connected in series (Figure 2.2.1). This is because a DMM configured as an ammeter measures
current flowing through it. Secondly, to ensure that same current flows through the device under
test (DUT) and the DMM configured as an ammeter.

Th − Pr
% Error = 100
Th

Procedure:

1. Take resistances R1 and R2 such that R1>100Ω and R2=10R1 and R3 & R4 are taken
arbitrarily maintaining R3 + R4 > 100Ω.
2. Connect the circuit as per circuit diagram with VS=10V DC supply.
3. Determine the currents I, I1 and I2 theoretically.
4. Examine the currents I, I1 and I2 using ammeter.
5. Repeat the procedure using different values of R3 & R4.

Experimental data:

Input Voltage (VS) =10V, R1= , R2=

Sl. Resistances I (mA) I1 (mA) I1 (mA)

No. used
R3 R4 Th. Pr. %error Th. Pr. %error Th. Pr. %error
1
2
3
4
5

Result/Conclusion:

Remarks/Precaution:

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Experiment No: 3

Title: Application of KCL and KVL to determine currents and voltages in a circuit.

Aim of the experiment: To measure the current and voltage using KVL and KCL in a circuit.

Apparatus Required: Components Required:

1. DC power Supply (30V, 1A) 1. Resistors
2. Multimeter 2. Single Strand hook-up wire
3. Bread board. 3. Connecting Wires

Theory:

Kirchhoff’s Voltage Law (KVL) states that “the algebraic sum of all voltages around any closed
path in a circuit is zero”.

V
m=1
m =0 , Where,

M = No. of voltages in the loop

Vm= mth voltage.

Figure 3(a): KVL application

Here E1 is the applied voltage across the loop ABCD, and I1 is the current flowing through the
circuit. Applying KVL across the loop ABCD we have,

E1=I1R1+I2R2

Kirchhoff’s Current Law (KCL) states that the algebraic sum of all the currents at any node in a
circuit is zero”.
N

I
n =1
n =0 , Where,

N=No. of branches connected to the node.

In= nth current entering (or leaving) a node.

Figure 3(b): KCL application.

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In Figure 3(b), considering I1 and I2 to be two currents flowing from A and B respectively
towards O while I3 is flowing away from O to C. Thus I1 and I2 if are regarded to be positive,
then I3 is regarded as negative currents. Thus,

I1 + I2 + (-I3) =0 => I1 + I2 = I3

Circuit Diagram for KVL:

Fig 3(c): Experimental Circuit Diagram for KVL

From the circuit diagram applying KVL in loop ABCDA we have,

VS - V1 - V2 - V3=0
Again, V1 = IR1; V2 = IR2 & V3 = IR3 (From Ohm’s law)
Therefore, VS= IR1+ IR2+ IR3

From the above equation determine the value of I and then V1, V2 & V3

Procedure:

1. Connect the circuit as per circuit diagram with VS=10V DC supply.

2. Calculate the voltages V1, V2 and V3 theoretically.
3. Examine the voltages V1, V2 and V3 using voltmeter.
4. Repeat the procedure for different values of R1, R2 & R3.
5. The verification must ensure that VS=V1 + V2 + V3

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Experimental data (KVL): VS=10V.

Total
Sl. Resistance Voltage across the resistances Voltage

% of Error
No. VS=V1+V2+V3

R1 R2 R3 V1(volt) V2(volt) V3(volt) Th Pr

Th Pr Th Pr Th Pr
1.
2.
3.
4.
5.

Circuit Diagram of KCL

Fig 3(d): Experimental Circuit Diagram for KCL

From the circuit diagram applying KCL at node 1

IS = I1 + I2 + I3
R123
V1 = VS R123 = R1 R2 R3
R123 + Rs ;
V1 V V
Again; I1 = ; I 2 = 1 & I 3 = 1 (From Ohm’s law)
R1 R2 R3
V V V
Therefore, IS = 1 + 1 + 1
R1 R2 R3

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VS  R1  R2  R3 
IS = , Req =  RS + 
Req  R1 R2 + R2 R3 + R3 R1 

From the above equation determine the value of V1 and then I1, I2 & I3

Procedure:

1. Connect the circuit as per circuit diagram with VS=10V DC supply.

2. Calculate the Currents I1, I2 and I3 theoretically.
3. Examine the currents I1, I2 and I3 using ammeter.
4. Repeat the procedure for different values of R1, R2 & R3.
5. The verification must ensure that
IS= I1+ I2+I3

Experimental data (KCL): VS=10V.

Resistance Current along the branches Total Current

% of Error
Sl. Is (mA) IS=I1+ I2+I3
No.
R1 R2 R3 I1(mA) I2(mA) I3(mA) Th Pr
Th Pr Th Pr Th Pr Th Pr
1.
2.
3.
4.
5.

Result/Conclusion:

Remarks/Precaution:

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Experiment No: 4

Title: Application of Current Division and Voltage Division rule to determine currents and
voltages in a circuit.

Aim of the experiment: To measure the current and voltage using Current Division and Voltage
Division rule in a circuit.

Apparatus Required: Components Required:

1. DC power Supply (30V, 1A) 1. Resistors
2. Multimeter 2. Single Strand hook-up wire
3. Bread board. 3. Connecting Wires

Theory:

Voltage Divider is a simple linear circuit that produces an output voltage (Vout) that is a fraction
of its input voltage (Vin). Voltage division refers to the partitioning of a voltage among the
components of the divider.

The ratio describing voltage division places the resistance of the considered branches in the
numerator and total resistance in the denominator.

A general formula for the voltage VX in a resistor

RX that is in series with a combination of other
resistors of total resistance RT is (see Figure)
 RX 
VX =    V , Where, RT =R1+R2+….
 RX + RT 
Where V is the total voltage entering the combined network of RX in series with RT and RT is
composed of a series combination of resistors, R1, R2, ... etc

Current Divider is a simple linear circuit that produces an output current (IX) that is a fraction of
its input current (IT). Current division refers to the splitting of current between the branches of
the divider.
The ratio describing current division places the
impedance of the unconsidered branches in the
numerator and total resistance in the denominator.

A general formula for the current IX in a resistor

RX that is in parallel with a combination of other
resistors of total resistance RT is (see Fig1)
Fig:1

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Where,

Where IT is the total current entering the combined network of RX in parallel with RT and RT is
composed of a parallel combination of resistors, R1, R2, ... etc

Circuit Diagram for Voltage Division Rule (VDR):

Fig 4(a): Experimental Circuit Diagram for VDR

From the circuit diagram applying Voltage Division Rule we have,

 R1   R2   R3 
V1 =    VS V2 =    VS V3 =    VS
 1
R + R2 + R3
,
 1
R + R2 + R3  1
R + R2 + R3
,

VS= V1+ V2+ V3

From the above equation determine the value of V1, V2 & V3

Procedure:
1. Connect the circuit as per circuit diagram with VS=10V DC supply.
2. Calculate the voltages V1, V2 and V3 theoretically.
3. Examine the voltages V1, V2 and V3 using voltmeter.
4. Repeat the procedure for different values of R1, R2 & R3.
5. The verification must ensure that
VS=V1 + V2 + V3

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Experimental data Voltage Division Rule (VDR): VS=10V.

Resistance Voltage across the resistances Total Voltage

% of Error
Sl. R1 R2 R3 V1(volt) V2(volt) V3(volt) VS=V1+V2+V3
No.
Th Pr Th Pr Th Pr Th Pr
1.
2.
3.
4.
5.

Circuit Diagram of Current Division Rule (CDR):

Fig 4(b): Experimental Circuit Diagram for CDR

VS  R1  R2  R3 
From Ohm’s Law, IS = , Req =  RS + 
Req  R1 R2 + R2 R3 + R3 R1 

From the circuit diagram applying Current Division Rule we have,

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R23 R2  R3
I1 =  IS R23 =
R1 + R23 , Where
R2 + R3
R31 R1  R3
I2 =  IS R31 =
R2 + R31 , Where
R1 + R3

R12 R1  R2
I3 =  IS R12 =
R3 + R12 , Where
R1 + R2

From the above equation determine the value of IS and then I1, I2 & I3

Procedure:
1. Connect the circuit as per circuit diagram with VS=10V DC supply.
2. Calculate the Currents I1, I2 and I3 theoretically.
3. Examine the currents I1, I2 and I3 using ammeter.
4. Repeat the procedure for different values of R1, R2 & R3.
5. The verification must ensure that
IS= I1+ I2+I3

Experimental data Current Division Rule: VS=10V.

Resistance Current along the branches Total Current

% of Error
Sl. No. Is (mA) R1 R2 R3 I1(mA) I2(mA) I3(mA) IS=I1+ I2+I3

Th Pr Th Pr Th Pr Th Pr Th Pr
1.
2.
3.
4.
5.

Result/Conclusion:

Remarks/Precaution:

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Experiment No: 5

Title: Superposition Theorem.

Aim of the Experiment: Verification of Superposition Theorem.

Apparatus / Component Required:

1. Regulated Power Supply (RPS) (30V, 2A)

2. Digital Multimeter (DMM)
3. Fixed Resistors & Variable Resistors.
4. Bread board.
5. Connecting Wires

Theory:

Superposition Theorem:

Response in a linear circuit with multiple sources can be obtained by adding the individual
responses caused by the separate independent sources acting alone. For an independent source
acting alone, all other independent voltage sources are replaced by short circuits and all other
independent current sources are replaced by open circuits.

Figure 7.1: Experimental Circuit diagram

Applying KVL to the circuit diagram mentioned in Fig 7(a),

V1 = R1 I1 + RL (I1+I2) … … … (i)

V2 = R2 I2 + RL (I1+I2)… … … (ii)

From the above relation determine I1 & I2,

Current through RL is given as,

IL = (I1+I2)
Step 1: Considering Source 1(V1) only:

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Figure 7.2: Circuit diagram considering V1 only

Current through RL is given as,

 V1   R2 
I L1 =   
 R1 + ( R2 || RL )   R2 + RL 

Step 2: Considering Source 2 (V2) only:

Figure 7.3: Circuit diagram considering V2 only

Current through RL is given as,

 V2   R1 
I L2 =   
 R2 + ( R1 || RL )   R1 + RL 

Using superposition theorem,

ILL = IL1 + IL2

Procedure:

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1. Take three resistors R1, R2 and RL and check their values using colour codes.
2. Calculate IL, IL1, IL2 and ILL theoretically.
3. Connect the circuit diagram shown in Figure 7.1 with supply voltage V1=10V (DC) and
V2=5V (DC).
4. Examine the value of IL using an ammeter Figure 7.1.
5. Short circuit the voltage source V2 as shown in Figure 7.2 and examine the value of IL1.
6. Short circuit the voltage source V1 as shown in Figure 7.3 and examine the value of IL2.
7. Determine ILL = IL1+ IL2
8. The verification must ensure that: IL = ILL
9. Repeat the procedure for different values of R1, R2 and RL.

I L − I LL
% Error = 100
IL

Experimental data: VS=10V.

Sl. Resistance (KΩ) IL(mA) IL1 (mA) IL2 (mA) ILL= IL1+ IL2 (mA)

% Error
No.
R1 R2 RL Th Pr Th Pr Th Pr Th Pr

1.
2.
3.
4.
5.

Result/Conclusion:

Remarks/Precaution:

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Experiment No: 6

Title: Reciprocity Theorem.

Aim of the Experiment: Verification of Reciprocity Theorem.

Apparatus / Component Required:

1. Regulated Power Supply (RPS) (30V, 2A)

2. Digital Multimeter (DMM)
3. Fixed Resistors & Variable Resistors.
4. Bread board.
5. Connecting Wires

Theory:

Reciprocity Theorem:

In any branch of a network , the current (I) due to a single source of voltage (V) elsewhere in the
network is equal to the current through the branch in which the source was originally placed
when the source is placed in the branch in which the current (I) was originally obtained.

Figure 11.1 (a) (b): Experimental Circuit diagram 1

The load current IL is given as,

 VS   R5 
IL =   
 R1 + R2 + {R5 || ( R3 + R4 )}   R5 + ( R3 + R4 ) 
The load current IL/ is given as,

 VS   R5 
I L/ =   
 R3 + R4 + {R5 || ( R1 + R2 )}   R5 + ( R1 + R2 ) 

To verify, I L = I L/

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Figure 11.2 (a) (b): Experimental Circuit diagram 2

Procedure:

1. Take five resistors R1, R2, R3, R4 and R5 and check their values using colour codes.
2. Connect the circuit diagram shown in Figure 11.1 (a) with supply voltage VS=10V (DC).
3. Calculate IL theoretically and examine the value of IL using an ammeter.
4. Interchange the position of source and ammeter as shown as Figure 11.1 (b).
5. Calculate IL/ theoretically and examine the value of IL/.
6. The verification must ensure that: IL = IL/
7. Repeat step1 to step6 for Figure 11.2
8. Repeat the procedure with VS=15V (DC).

I L ( pr ) − I L/ ( pr )
% Error = 100
I L ( pr )

Experimental data: %Error

Resistance (KΩ) IL(mA) IL/ (mA)

Sl.
VS
No. R1 R2 R3 R4 R5 Th Pr Th Pr

1 10V

2 15V

Result/Conclusion:

Remarks/Precaution:

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Experiment No: 7

Title: Thevenin’s Theorem.

Aim of the Experiment: Verification of Thevenin’s Theorem and determination of the

Thevenin’s equivalent circuit.

Apparatus / Component Required:

1. Regulated Power Supply (RPS) (30V, 2A)

2. Digital Multimeter (DMM)
3. Fixed Resistors & Variable Resistors.
4. Bread board.
5. Connecting Wires

Theory:

Thevenin’s Theorem:
A two–terminal complex network can be replaced by a simple network consisting a voltage
source (called Thevenin’s Voltage) with the value equal the open circuit voltage across its
terminals, in series with a resistor (called Thevenin’s Resistance) with the value equal to the
equivalent resistance of the network calculated by replacing all the independent sources by their
internal resistances (i.e. voltage source by short circuit & current source by open circuit).

Figure 5.1: Experimental Circuit diagram.

The load current IL is given as,

 VS   R3 
IL =  
  
 R1 + {R3 || ( R2 + RL )}   R3 + ( R2 + RL ) 

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Step 1: Determining Thevenin’s Voltage (Vth)

Figure 5.2: Circuit diagram for determining Vth

Thevenin’s Voltage is given as,

 R3 
Vth =    VS
 1
R + R3

Step 2: Determining Thevenin’s Resistance (Rth)

Figure 5.3: Circuit diagram for determining Rth

Thevenin’s Resistance is given as,

R R 
Rth =  1 3  + R2
 R1 + R3 

Step 3: Thevenin’s Circuit

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Figure 5.4: Thevenin’s Circuit diagram

The load current IL/ is given as,

Vth
I L/ =
Rth + RL

Procedure:

1. Take four resistors R1, R2, R3 and RL and check their values using colour codes.
2. Connect the circuit diagram shown in Figure 5.1 with supply voltage VS=10V (DC).
3. Calculate IL, Vth, Rth and IL/ theoretically.
4. Examine the value of IL using an ammeter Figure 5.1
5. Remove the load resistance and examine the Thevenin’s voltage (Vth) by connecting a
voltmeter Figure 5.2
6. Examine the Thevenin’s Resistance Rth by connecting an ohmmeter Figure 5.3
7. Connect the circuit diagram shown in Figure 5.4 and examine the value of IL/ using an
ammeter.
8. The verification must ensure that: IL = IL/
9. Repeat the procedure for different values of R1, R2, R3 and RL.

I L − I L/
% Error =  100
IL

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Experimental data: VS=10V.

Resistance (KΩ) IL(mA) Vth (V) Rth (KΩ) IL/ (mA)

% Error
Sl. No.
R1 R2 R3 RL Th Pr Th Pr Th Pr Th Pr

1.
2.
3.
4.
5.

Result/Conclusion:

Remarks/Precaution:

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Experiment No: 8

Title: Norton’s Theorem.

Aim of the Experiment: Verification of Norton’s Theorem and determination of the Norton’s
equivalent circuit.

Apparatus / Component Required:

1. Regulated Power Supply (RPS) (30V, 2A)

2. Digital Multimeter (DMM)
3. Fixed Resistors & Variable Resistors.
4. Bread board.
5. Connecting Wires

Theory:

Norton’s Theorem:

A two–terminal complex network can be replaced by a simple network consisting a current

source (called Norton’s Short circuit current) with the value equal to the short circuit current at its
terminal, in parallel with a resistor (called Norton’s Resistance) with the value equal to the
equivalent resistance of the network calculated by replacing all the independent sources by their
internal resistances (i.e. voltage source by short circuit & current source by open circuit).

Figure 6.1: Experimental Circuit diagram.

The load current IL is given as,

 VS   R3 
IL =   
 R1 + {R3 || ( R2 + RL )}   R3 + ( R2 + RL ) 

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Step 1: Determining Norton’s Short circuit Current (ISC)

Figure 6.2: Circuit diagram for determining ISC

Norton’s Short circuit Current is given as,

 VS   R3 
I SC =   
 1
R + ( R3 || R2   R3 + R2 
)

Step 2: Determining Norton’s Resistance (RN)

Figure 6.3: Circuit diagram for determining RN

Norton’s Resistance is given as,

R R 
RN =  1 3  + R2
 R1 + R3 

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Step 3: Norton’s Circuit

Figure 6.4: Norton’s Circuit diagram

The load current IL/ is given as,

 RN 
I L/ =    I SC
 N
R + RL 

Figure 6.5: Circuit with voltage source equivalent to Norton’s Circuit diagram

Procedure:

1. Take four resistors R1, R2, R3 and RL and check their values using colour codes.
2. Connect the circuit diagram shown in Figure 6.1 with supply voltage VS=10V (DC).
3. Calculate IL, ISC, RN and IL/ theoretically.
4. Examine the value of IL using an ammeter Figure 6.1.
5. Remove the load resistance and examine the Norton’s short current (ISC) by connecting a
ammeter Figure 6.2
6. Examine the Norton’s Resistance RN by connecting an ohmmeter Figure 6.3
7. Connect the circuit diagram shown in Figure 6.4 and examine the value of IL/ using an
ammeter.
8. The verification must ensure that: IL = IL/
9. Repeat the procedure for different values of R1, R2, R3 and RL.

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I L − I L/
% Error =  100
IL

Experimental data: VS=10V.

Sl. Resistance (KΩ) IL(mA) ISC (mA) RN (KΩ) IL/ (mA)

% Error
No.
R1 R2 R3 RL Th Pr Th Pr Th Pr Th Pr

1.
2.
3.
4.
5.

Result/Conclusion:

Remarks/Precaution:

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Experiment No:

Title: Maximum Power Transfer Theorem.

Aim of the Experiment: Verification of Maximum Power Transfer Theorem.

Apparatus / Component Required:

1. Regulated Power Supply (RPS) (30V, 2A)

2. Digital Multimeter (DMM)
3. Fixed Resistors & Variable Resistors.
4. Bread board.
5. Connecting Wires

Theory:

Maximum Power Transfer Theorem:

An independent voltage source in series with a resistance RS or an independent current source in

parallel with a resistance RS, delivers a maximum power to that load resistance RL for which
RL = RS.
In terms of a Thevenin’s Equivalent Circuit, maximum power is delivered to the load resistance
RL when RL is equal to the Thevenin’s equivalent resistance RTH of the circuit.

Figure 8.1: Experimental Circuit diagram.

Step 1: Determining Thevenin’s Voltage (Vth)

Thevenin’s Voltage is given as,

 R2 
Vth =    VS
 1
R + R2

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Figure 8.2: Circuit diagram for determining Vth

Step 2: Determining Thevenin’s Resistance (Rth)

Thevenin’s Resistance is given as,
R R 
Rth =  1 2 
 R1 + R2 

Figure 8.3: Circuit diagram for determining Rth

Step 3: Thevenin’s Circuit

Figure 8.4: Thevenin’s Circuit diagram

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The load current IL is given as,

Vth
IL =
Rth + RL

The Power delivered at RL is given as,

Vth2
P=
4 RL

Procedure:

1. Take three resistors R1, R2 and RL and check their values using colour codes.
2. Connect the circuit diagram shown in Figure 8.1 with supply voltage VS=10V (DC).
3. Calculate Vth, Rth.
4. Remove the load resistance and examine the Thevenin’s voltage (Vth) by connecting a
voltmeter Figure 8.2
5. Examine the Thevenin’s Resistance Rth by connecting an ohmmeter Figure 8.3
6. Connect the circuit diagram shown in Figure 8.4 and Calculate values of IL (for different
values of RL) theoretically and examine the value of IL using an ammeter.
7. Determine the power for various load values P = IL2 RL.
8. The verification must ensure that: Maximum power is delivered at the load when RL=RTh.
Th − Pr
% Error = 100
Th
Experimental data: VS=10V.

Sl. Resistance (KΩ) Vth (V) Rth (KΩ) IL(mA) Power (W),

% Error
P = IL2 RL
No.
R1 R2 RL Th Pr Th Pr Th Pr Th Pr

1. RL<<Rth
2. RL<Rth
3. RL=Rth
4. RL>Rth
5. RL>>Rth

Result/Conclusion:

Remarks/Precaution:

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Experiment no: 9

Title: P-N junction Diode Characteristics.

Aim of the Experiment: To observe and draw the Forward and Reverse bias V-I Characteristics
of a P-N Junction Diode and to determine the Load Line and Dynamic
Resistance.

Apparatus Required:

1. P-N Diode (IN4004)

2. Regulated Power Supply (0-30V, 0-2A)
3. Resistor (1KΩ)
4. DMM
5. Bread board
6. Connecting wires

Theory:

A P-N junction diode conducts only in one direction. The V-I characteristics of the diode are
curve between voltage across the diode and current through the diode. When external voltage is
zero, circuit is open and the potential barrier does not allow the current to flow. The barrier
potential is about 0.7V for Si and 0.3V for Ge.

When the diode is forward biased (P-type (anode) is connected to +ve terminal and N-type
(cathode) is connected to –ve terminal of the supply voltage) and the applied voltage is increased
from zero it overcomes the barrier potential current starts flowing through the diode and also in
the circuit. The diode is said to be in ON state. With increasing forward voltage diode forward
resistance decreases to a very small value and the diode current increases exponentially.

When the diode is reverse biased (N-type (cathode) is connected to +ve terminal and P-type
(Anode) is connected to –ve terminal of the supply voltage) the potential barrier across the
junction increases. Therefore, the junction resistance becomes very high and a very small current
(reverse saturation current) flows in the circuit. The diode is said to be in OFF state. The reverse
bias current is due to minority charge carriers.

A load line is used in graphic analysis of circuits, representing the constraint other parts of the
circuit place on a non-linear device, like a diode or transistor. A load line represents the response
of a linear circuit connected to the nonlinear device in question. The operating point is where the
parameters of the nonlinear device and the parameters of the linear circuit match, according to
how they are connected while still adhering to their internal systems.

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Circuit Diagrams:

Fig 1.1: Forward bias Circuit

Fig 1.2: Reverse bias Circuit

Model Waveform:

Fig 1.3: Response of P-N Diode

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Fig 1.4: DC Load Line

Procedure:

FORWARD BIAS
1. Connections are made as per the circuit diagram.
2. For forward bias, the RPS +ve is connected to the anode of the diode and RPS –ve is
connected to the cathode of the diode,
3. Switch on the power supply and increases the input voltage (supply voltage) in steps.
4. Note down the corresponding current flowing through the diode and voltage across the
diode for each and every step of the input voltage.
5. The reading of voltage and current are tabulated.
6. Graph is plotted between voltage and current.
7. Draw the load line.

OBSERVATION TABLE (FORWARD BIAS):

Sl. No Applied Voltage (V) Voltage across Diode (V) Current through Diode (mA)
1.
2.
3.
….

REVERSE BIAS
1. Connections are made as per the circuit diagram
2. For reverse bias, the RPS +ve is connected to the cathode of the diode and RPS –ve is
connected to the anode of the diode.
3. Switch on the power supply and increase the input voltage (supply voltage) in steps
4. Note down the corresponding current flowing through the diode voltage across the diode
for each and every step of the input voltage.
5. The readings of voltage and current are tabulated.
6. Graph is plotted between voltage and current.

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OBSERVATION TABLE (REVERSE BIAS):

Sl. No Applied Voltage (V) Voltage across Diode (V) Current through Diode (mA)
1.
2.
3.
….

The Dynamic Resistance is given by:

Forward Resistance, rf = ∆Vf/∆If = (Vf1- Vf2) / (If1- If2)

Reverse Resistance, rr = ∆Vr/∆Ir = (Vr1- Vr2) / (Ir1- Ir2)

Precautions:
• All the connections should be correct.
• Parallax error should be avoided while taking the readings from the Analog meters.

Result:

EXPECTED VIVA QESTIONS:

1. Define depletion region of a diode?

2. What is meant by transition & space charge capacitance of a diode?
3. Is the V-I relationship of a diode Linear or Exponential?
4. Define cut-in voltage of a diode and specify the values for Si and Ge diodes?
5. What are the applications of a p-n diode?
6. Draw the ideal characteristics of P-N junction diode?
7. What is the diode equation?
8. What is PIV?
9. What is the break down voltage?
10. What is the effect of temperature on PN junction diodes?

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Experiment no: 10

Title: Zener diode characteristics.

Aim of the Experiment: To observe and draw the Forward and Reverse bias V-I Characteristics
of a zener Diode and to determine the Dynamic Resistance.

Apparatus Required:

1. Zener diode (6V).

2. Regulated Power Supply (0-30v, 0-2A).
3. DMM
4. Resistor (1KΩ)
5. Bread Board
6. Connecting wires

Theory:

A zener diode is heavily doped p-n junction diode, specially made to operate in the break down
region. A p-n junction diode normally does not conduct when reverse biased. But if the reverse
bias is increased, at a particular voltage it starts conducting heavily. This voltage is called
Break down Voltage. High current through the diode can permanently damage the device.
Therefore to avoid high current, we connect a resistor in series with zener diode. Once the diode
starts conducting it maintains almost constant voltage across the terminals whatever may be the
current through it, i.e., it has very low dynamic resistance. It is used in voltage regulators.

Circuit Diagrams:

Fig 2.1: Forward bias Circuit

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Fig 2.2: Reverse bias Circuit

Model Waveform:

Fig 2.3: Response of Zener Diode

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Procedure:

FORWARD BIAS
1. Connections are made as per the circuit diagram.
2. For forward bias, the RPS +ve is connected to the anode of the diode and RPS –ve is
connected to the cathode of the diode,
3. Switch on the power supply and increases the input voltage (supply voltage) in steps.
4. Note down the corresponding current flowing through the zener diode and voltage across
for each and every step of the input voltage.
5. The reading of voltage and current are tabulated.
6. Graph is plotted between voltage and current.

OBSERVATION TABLE (FORWARD BIAS):

Sl. No Applied Voltage (V) Voltage across Diode (V) Current through Diode (mA)
1.
2.
3.
….

REVERSE BIAS
1. Connections are made as per the circuit diagram
2. For reverse bias, the RPS +ve is connected to the cathode of the diode and RPS –ve is
connected to the anode of the diode.
3. Switch on the power supply and increase the input voltage (supply voltage) in steps
4. Note down the corresponding current flowing through the zener diode voltage across for
each and every step of the input voltage.
5. The readings of voltage and current are tabulated.
6. Graph is plotted between voltage and current.

OBSERVATION TABLE (REVERSE BIAS):

Sl. No Applied Voltage (V) Voltage across Diode (V) Current through Diode (mA)
1.
2.
3.
….

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The Dynamic Resistance is given by:

Forward Resistance, rfz = ∆VfZ/∆IfZ = (VfZ1- VfZ2) / (IfZ1- IfZ2)

Reverse Resistance, rz = ∆VZ/∆IZ = (VZ1- VZ2) / (IZ1- IZ2)

Precautions:

• The terminals of the zener diode should be properly identified

• Should be ensured that the applied voltages & currents do not exceed the ratings of the
diode.

Result:

EXPECTED VIVA QESTIONS:

1. What type of temp coefficient does the zener diode have?

2. If the impurity concentration is increased, how the depletion width effected?
3. Does the dynamic impendence of a zener diode vary?
4. Explain briefly about avalanche and zener breakdowns?
5. Draw the zener equivalent circuit?
6. Differentiate between line regulation & load regulation?
7. In which region zener diode can be used as a regulator?
8. How the breakdown voltage of a particular diode can be controlled?
9. What type of temperature coefficient does the Avalanche breakdown has?
10. By what type of charge carriers the current flows in zener and avalanche breakdown
diodes?

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Experiment no: 11

Title: Transistor Characteristics (CB-configuration)

Aim of the Experiment: To verify the input and output characteristics of transistor connected in
CB configuration and to find α and h-parameters of the given transistor.

Apparatus required:
1. Transistor (BC 107)
2. Regulated Power Supply (0-30v, 0-2A).
3. DMM
4. Resistor (1KΩ)
5. Bread Board
6. Connecting wires

Theory:

In common base configuration, input voltage is applied between emitter and base terminals and
output is taken across the collector and base terminals. Therefore the base terminal is common
to both input and output.

The input characteristics resemble that of a forward biased diode curve. This is expected since
the Base-Emitter junction of the transistor is forward biased. IE increases rapidly while VBE
remains constant. With increase in collector voltage the input characteristics shifts right.

The output characteristics are drawn between Ic and VCB at constant IE. The collector current is
proportional to IE and independent of VCB thus collector current becomes almost constant
(saturated). Higher value of VCB causes decrease in IB current which results in increase of IC
but this change is not significant.

The current amplification factor of CB configuration is given by α = ΔIC/ΔIE

C E

BC107 (Top view)

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Circuit Diagram:

Fig 7.1.1: Circuit diagram for determining Transistor CB characteristics

Expected graph:

Fig 7.1.2: Input Characteristics Fig 7.1.3: Output Characteristics

Procedure:

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INPUT CHARECTERSTICS:

1. Connect the circuit as per the circuit diagram.

2. For plotting the input characteristics the output voltage VCB is kept constant at 1V and
for different values of VBE . Note down the values of IE
3. Repeat the above step by keeping VCB at 2V and 3V.
4. Tabulate all the readings.
5. Plot the graph between VBE and IE for constant VCB

OUTPUT CHARACTERSTICS:

1. Connect the circuit as per the circuit diagram

2. For plotting the output characteristics the input current IE is kept constant at 100μA and
for different values of VCB note down the values of IC
3. Repeat the above step by keeping IE at 150μA and 200 μA
4. Tabulate the all the readings
5. plot the graph between VCE and IC for constant IB

OBSERVATIONS:

INPUT CHARACTERISTICS:

VCB = 1V VCB = 2V VCB = 3V

Sl. No.
VBE (V) IE (mA) VBE (V) IE (mA) VBE (V) IE (mA)

OUTPUT CHARACTARISTICS:

IE = 100 μA IE = 150 μA IE = 200 μA

Sl .No.
VCB (V) IC (mA) VCB (V) IC (mA) VCB (V) IC (mA)

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Calculations:

IC VEB VEB

= = h = = h =
; rb V
=
I E ; ib I E VCB =const CB I E =const

IC IC
h fb = = h = =
I E VCB =const
; ob V
CB I E = const

Precautions:

1. The supply voltage should not exceed the rating of the transistor
2. Meters should be connected properly according to their polarities

Result:

1. The input and output characteristics of a transistor in CB configuration are drawn.

2. The α of a given transistor is calculated.
3. The h-parameters are calculated.

EXPECTED VIVA QUESTIONS:

1. What is the range of α for the transistor?

2. Draw the input and output characteristics of the transistor in CB configuration?
3. Identify various regions in output characteristics?
4. What is the relation between α and β?
5. What are the applications of CB configuration?
6. What are the input and output impedances of CB configuration?
7. Define α (alpha)?
8. What is EARLY effect?
9. Draw diagram of CB configuration for PNP transistor?
10. What is the power gain of CB configuration?

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Experiment no: 12

Title: Transistor Characteristics (CE-configuration)

Aim of the Experiment: To draw the input and output characteristics of transistor connected in
CE configuration and to find β and h-parameters of the given transistor.

Apparatus required:
1. Transistor (BC 107)
2. Regulated Power Supply (0-30v, 0-2A).
3. DMM
4. Resistor (1KΩ)
5. Bread Board
6. Connecting wires

Theory:

In common emitter configuration, input voltage is applied between base and emitter terminals
and output is taken across the collector and emitter terminals. Therefore, the emitter terminal
is common to both input and output.

The input characteristics resemble that of a forward biased diode curve. This is expected since
the Base-Emitter junction of the transistor is forward biased. IB increases less rapidly with VBE .
Therefore, input resistance of CE circuit is higher. With increase in collector voltage the input
characteristics shifts left.

The output characteristics are drawn between Ic and VCE at constant IB. the collector current
varies with VCE unto few volts only. After this the collector current becomes almost constant,
and independent of VCE. The value of VCE up to which the collector current changes with VCE is
known as Knee voltage. The transistor always operated in the region above Knee voltage, IC is
always constant and is approximately equal to IB.

The current amplification factor of CE configuration is given by β = ΔIC/ΔIB

C E

BC107(Top view)

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Gauhati University Institute of Science & Technology, Guwahati-781014
 :Basic Electrical Electronics Engineering Laboratory:
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Circuit Diagrams:

Fig 7.2.1: Circuit diagram for determining Transistor CE characteristics

Expected graph:

Fig 7.2.2: Input Characteristics Fig 7.2.3: Output Characteristics

Procedure:

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Gauhati University Institute of Science & Technology, Guwahati-781014
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INPUT CHARECTERSTICS:

1. Connect the circuit as per the circuit diagram.

2. For plotting the input characteristics the output voltage VCE is kept constant at 1V and
for different values of VBE. Note down the values of IB
3. Repeat the above step by keeping VCE at 2V and 4V.
4. Tabulate all the readings.
5. Plot the graph between VBE and IB for constant VCE

OUTPUT CHARACTERSTICS:

1. Connect the circuit as per the circuit diagram

2. For plotting the output characteristics the input current IB is kept constant at 20μA and
for different values of VCE note down the values of IC
3. Repeat the above step by keeping IB at 30 μA and 40 μA
4. Tabulate the all the readings
5. plot the graph between VCE and IC for constant IB

OBSERVATIONS:

INPUT CHARACTERISTICS:

VCE = 1V VCE = 2V VCE = 4V

Sl. No.
VBE(V) IB(mA) VBE(V) IB(mA) VBE(V) IB(mA)

OUTPUT CHARACTARISTICS:

IB = 20 μA IB = 30 μA IB = 40 μA
Sl .No.
VCE(V) IC(mA) VCE(V) IC(mA) VCE(V) IC(mA)

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Gauhati University Institute of Science & Technology, Guwahati-781014
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Calculations:

IC VBE VBE

= = h = = h = =
I B ; I B ; VCE
ie re
VCE =const I B =const

IC IC
h fe = = h = =
I B VCE =const
; oe V
CE I B =const

Precautions:

1. The supply voltage should not exceed the rating of the transistor
2. Meters should be connected properly according to their polarities

Result:

1. The input and output characteristics of a transistor in CE configuration are drawn.

2. The β of a given transistor is calculated.
3. The h-parameters are calculated.

EXPECTED VIVA QUESTIONS:

1. What is the range of β for the transistor?

2. What are the input and output impedances of CE configuration?
3. Identify various regions in the output characteristics?
4. what is the relation between α and β
5. Define current gain in CE configuration?
6. Why CE configuration is preferred for amplification?
7. What is the phase relation between input and output?
8. Draw diagram of CE configuration for PNP transistor?
9. What is the power gain of CE configuration?
10. What are the applications of CE configuration?

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Gauhati University Institute of Science & Technology, Guwahati-781014
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Experiment no: 13

Title: Transistor as a switch and inverter.

Aim of the Experiment: To determine the property of transistor as a switch and as an inverter
and to plot the transfer characteristics.

Apparatus required:
1. Transistor (BC 107)
2. Regulated Power Supply (0-30v, 0-2A).
3. DMM
4. Resistor (1KΩ, 10KΩ)
5. Bread Board
6. Connecting wires

Theory:

The basic element of logic circuits is the transistor switch. A schematic of such a switch is shown
in Figure 7.3.1.

When Vin = 0V; is in low state, the BJT switch is OPEN; the transistor is OFF (in cut-off region),
IC =0; providing a constant voltage at collector to emitter, VO = VCE = VCC (open switch).

When Vin is in high state, the BJT switch is CLOSED, IC = (VCC - VCE-sat) / RC, the transistor is
saturated (in saturation region) (i.e. closed switch) providing a small yet constant voltage at
collector to emitter, VCE-sat ~ 0.2V ~ 0.0 V.

The above BJT circuit is also called an "inverter" or a "NOT" logic gate. Let's assume that the
low state is at 0.2 V and the high state is at 5 V, where VCC = 5 V. When the input voltage Vin is
low ( 0 < Vin < VTh ), BJT will be in cut-off region, and VO = VCC = 5 V (high state). When input
voltage Vin is high (Vin >> VTh), with proper choice of RB, BJT will be in saturation, and
VO=VCE~0.2 V (low state).

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Gauhati University Institute of Science & Technology, Guwahati-781014
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Circuit Diagrams:

Fig 7.3.1: Circuit diagram

Expected graph:

Fig 7.3.2: Transfer Characteristics

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Gauhati University Institute of Science & Technology, Guwahati-781014
 :Basic Electrical Electronics Engineering Laboratory:
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Procedure:

1. Connect the circuit as per the circuit diagram.

2. VCC is kept constant at 5V and for different values of VBB. Note down the values of VBE,
VCE, IB and IC.
3. Tabulate all the readings.
4. Plot the graph (Transfer Characteristics) between Vi=VBB and V0=VCE.

OBSERVATIONS: RB= 10KΩ, RC= 1KΩ, VCC=5V

Sl. VBB (V) VBE (V) VCE (V) IB (mA) IC (mA)

No.

Precautions:

1. The supply voltage should not exceed the rating of the transistor.
2. Meters should be connected properly according to their polarities.

Result:

1. Transistor switch property is verified.

2. Transistor inverter property is verified.
3. The Transfer Characteristics is obtained.

EXPECTED VIVA QUESTIONS:

1. Explain transistor as a switch.

2. How NOT Gate can be formed using a transistor?
3. How much amplification is obtained in transistor inverter operation?
4. What is the relation between α and β
5. Define current gain in CE configuration?
6. Identify different operating region of the Transfer characteristics of transistor inverter?
7. What is the phase relation between input and output of transistor inverter?
8. Give examples of transistor used as a switch.

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Gauhati University Institute of Science & Technology, Guwahati-781014
 :Basic Electrical Electronics Engineering Laboratory:
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Experiment no: 14

Title: FET Characteristics.

Aim of the Experiment: To draw the drain and transfer characteristics of a given FET and to find
the drain resistance (rd), amplification factor (μ) and Transconductance (gm) of the given FET.

Apparatus required:
1. FET (BFW 109)
2. Regulated Power Supply (0-30V, 0-2A).
3. DMM
4. Resistor (1KΩ)
5. Bread Board
6. Connecting wires

Theory:

A FET is a three terminal device, having the characteristics of high input impedance and less
noise, the Gate to Source junction of the FET is always reverse biased. In response to small
applied voltage from drain to source, the n-type bar acts as sample resistor, and the drain
current increases linearly with VDS. With increase in ID the ohmic voltage drop between the
source and the channel region reverse biases the junction and the conducting position of the
channel begins to remain constant. The VDS at this instant is called “pinch of voltage (VP)”.

If the gate to source voltage (VGS) is applied in the direction to provide additional reverse bias,
the pinch off voltage VP is decreased.

In amplifier application, the FET is always used in the region beyond the pinch-off.
IDS= IDSS (1-VGS/VP)2

G D

Shield S

BF 109(Top view)

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Gauhati University Institute of Science & Technology, Guwahati-781014
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Circuit Diagram:

Fig 8.1: Circuit diagram for determining FET characteristics

Expected graph:

Fig 8.2: Transfer Characteristics Fig 8.3: Drain Characteristics

Procedure:

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Gauhati University Institute of Science & Technology, Guwahati-781014
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1. All the connections are made as per the circuit diagram.

2. To plot the drain characteristics, keep VGS constant at 0V.
3. Vary the VDD and observe the values of VDS and ID.
4. Repeat the above steps 2, 3 for different values of VGS at 1V and 2V.
5. All the readings are tabulated.
6. To plot the transfer characteristics, keep VDS constant at 0.5V.
7. Vary VGG and observe the values of VGS and ID.
8. Repeat steps 6 and 7 for different values of VDS at 1V and 1.5V.
9. The readings are tabulated.
10. From drain characteristics, calculate the values of dynamic resistance (rd) by using the
formula rd = ∆VDS/∆ID
11. From transfer characteristics, calculate the value of Transconductance (gm) By using the
formula Gm=∆ID/∆VGS
12. Amplification factor (μ) = dynamic resistance × Transconductance
μ = ∆VDS/∆VGS

OBSERVATIONS:

DRAIN CHARACTERISTICS:

VGS = 0V VGS = -1V VGS = -2V

Sl. No.
VDS(V) ID (mA) VDS(V) ID (mA) VDS(V) ID (mA)

TRANSFER CHARACTARISTICS:

VDS = 0.5V VDS = 1V VDS = 1.5V

Sl .No.
VGS(V) ID (mA) VGS(V) ID (mA) VGS(V) ID (mA)

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Gauhati University Institute of Science & Technology, Guwahati-781014
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Precautions:

1. The three terminals of the FET must be carefully identified

2. Practically FET contains four terminals, which are called source, drain, Gate, substrate.
3. Voltages exceeding the ratings of the FET should not be applied.

Calculations:
Dynamic resistance (rd) = ∆VDS/∆ID
Transconductance (gm) = ∆ID/∆VDS
Amplification factor (μ) = ∆VDS/∆VGS

Result:

1. The drain and transfer characteristics of a given FET are drawn

2. The dynamic resistance (rd), amplification factor (μ) and Transconductance (gm) of the
given FET are calculated.

EXPECTED VIVA QUESTIONS:

1. Why FET is voltage controlled device?

2. FET is unipolar or bipolar? Why?
3. Explain transfer characteristics of FET.
4. How FET is advantageous than BJT?
5. Compare FET and BJT.
6. Why FET is called as voltage controlled resistor (VCR)?
7. Explain operation of P-channel FET.
8. Write the current eq. of FET.

Department of Electronics & Communication Engineering,

Gauhati University Institute of Science & Technology, Guwahati-781014