5204 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 68, NO.

10, OCTOBER 2021

Sensitivity Analysis of a Novel Negative

Capacitance FinFET for Label-Free Biosensing
Ankit Dixit , Graduate Student Member, IEEE, Dip Prakash Samajdar , Senior Member, IEEE,
and Vibhuti Chauhan , Graduate Student Member, IEEE

Abstract — We propose and analyze a dielectric mod- is no delay in starting the treatment procedure [4], [5]. Recent
ulated (DM) negative capacitance (NC) fin-field effect advances in field effect transistor (FET) biosensors have added
transistor (FinFET) based biosensor for efficient and label- new dimensions to point-of-care measurements because of
free detection of biomolecular entities. For the first time,
the NC effect on bio-sensing owing to the presence of a their advantages of sensing accuracy, reduced power con-
dielectric-ferroelectricgate oxide stack is investigated. First, sumption, and development costs [6]–[11]. Recently, an FET-
capability of the NC-FinFET is compared with the baseline based biosensor is employed to recognize SARS-COV-2
FinFET as percentage variation in electrical parameters. in patients using nasopharyngeal swab sample [12].
Also, the sensing capability of the proposed device is exam- Several FET-based biosensor based on the inversion
ined with a wide variety of biomolecules with varying dielec-
tric constants. Inclusion of the NC effect in the biosensor mode (IM), accumulation mode, or the tunneling phenom-
exhibits very high sensitivity in terms of the electrical fig- ena [13]–[16] are proposed. Out of these, TFET-based biosen-
ures of merit (FoMs) such as threshold voltage, ION /IOFF -ratio, sors are considered superior but fabrication complexity, low
output conductance, and intrinsic gain with rapid response sensitivity, and ambipolarity of different TFET biosensor mod-
because of the steep subthreshold value. The use of raised els prevent its commercialization [17], [18]. FinFET (FinFET)
source drain (RSD) architecture allows more cavity space
to the biomolecules and, hence, increases the sensitivity device architecture provides more living space to the mole-
and selectivity of the biosensor. All the device simulations cules inside the sensor, thereby exhibiting higher sensitivity
are performed in a 3-D Sentaurus TCAD environment using and selectivity. However, FinFETs are more prone to the
well-calibrated structure. To establish a benchmark, the sen- short channel effects at lower node technology and, hence,
sitivity of the proposed biosensor is also compared with the biosensor designed using the proposed architecture require
published literature in order to determine its effectiveness.
The results of this study can establish NC-FinFET as a viable low power and have low response time for the identification
candidate for label-free DM biosensor applications. of the biomolecules. The basic principle of operation of
FET biosensors involves the variation of oxide capacitance
Index Terms — Biosensor, dielectric modulation, label-
free, negative capacitance (NC)-fin-field effect transis- because of the presence of trapped biomolecules with variable
tor (FinFET) sensitivity, silicon on insulator (SOI). dielectric constants inside the cavity, which causes a change in
the essential electrical parameters of the FET device such as
I. I NTRODUCTION threshold voltage, driving current, subthreshold slope (SS), and

T IME and again, human civilization has faced the threat

of extinction and is forced to surrender to the havoc
massacre created by some naturally evolving microorganisms
so on. This motivated us to consider negative capacitance (NC)
FinFETs in designing our proposed biosensor because of their
advantages over traditional FETs in terms of short channel
despite the advancements in the field of medical science. effects [19]–[21]. NC-FinFET uses a ferroelectric material
To win this completion, early detection and accurate diagnosis sandwiched between the metal gate and passivation oxide
of the health issues caused by new microorganisms is the need layer, which causes voltage amplification, thereby resulting in
of the hour. In modern biomedical engineering, biosensors increased current driving capacity, higher current ratio (CR),
have become a pivotal part because of their wide applica- and lower SS.
tions in forensic engineering, public healthcare industry, food- The basic performance metrics of the biosensors are sensi-
processing industries, etc. [1]–[3]. In the biomedical field, tivity and selectivity. Although identification of biomolecules
antigen-based tests have been popular, because of their ability in the cavity determines the biosensor sensitivity, the capa-
to identify these viruses in a short span of time so that there bility to distinguish different types of biomolecules defines
the selectivity of the biosensor. The electrical characteristics
Manuscript received July 15, 2021; revised August 17, 2021; accepted
August 18, 2021. Date of publication September 6, 2021; date of current such as CR, threshold voltage (Vth ), OFF-state current (IOFF ),
version September 22, 2021. The review of this article was arranged by output resistance (ro ), etc., are utilized to define the sen-
Editor B. K. Kaushik. (Corresponding author: Dip Prakash Samajdar.) sitivity parameters for the proposed biosensor. The primary
The authors are with the Department of Electronics and Com-
munication Engineering, PDPM IIITDM Jabalpur, Jabalpur, Madhya objective of this work is to enhance the sensitivity of IM
Pradesh 482005, India (e-mail: [email protected]; dipprakash010@ biosensor by incorporating the NC capability into the FinFET
gmail.com; [email protected]). device. A brief comparison of percentage change in the basic
Color versions of one or more figures in this article are available at
https://doi.org/10.1109/TED.2021.3107368. DC performance parameters between the NC-FinFET and
Digital Object Identifier 10.1109/TED.2021.3107368 baseline FinFET device has been illustrated in Fig. 1. It is
0018-9383 © 2021 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
See https://www.ieee.org/publications/rights/index.html for more information.

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 DIXIT et al.: SENSITIVITY ANALYSIS OF A NOVEL NC FinFET FOR LABEL-FREE BIOSENSING 5205

Fig. 3. Top view of the proposed NC-FinFET based DM biosensor

showing the device’s doping profile and dimension.

Fig. 1. Percentage change in the DC parameter of NC-FinFET with

respect to the baseline FinFET.

Fig. 2. (a) 3-D schematic representation of the proposed RSD NC-

FinFET, with various materials, layers, and sensor electrode. (b) 2-D
cross section of the channel orientation that highlights the cavity region
accessible to biomolecules.

interesting to note that NC-FinFET device provide 56.15%

lower OFF-current, which results in 48.66% improvement in
the CR at supply voltage of 0.5 V.
In this study, we mainly focus on the performance metrics
of the proposed NC-FinFET biosensor under the impact of
the variation of the dielectric constant in the cavity region
located between the gate electrode and the channel region.
The effective change in terms of threshold voltage and CR
Fig. 4. Fabrication flow of DM NC-FinFET label free biosensor.
can be measured at output node and precise identification of (a) and (b) SOI formation. (c) RSD channel growth. (d) Ion implantation.
the biomolecules can be done. Comparison with different types (e) Oxide growth. (f)–(h) Chromium and ferroelectric deposition. (i) Cavity
of FET architecture reveals that our proposed device exhibits formation. (j) Electrode deposition.
superior performance in terms of sensitivity.
For fabricating the proposed structure, the process flow is
as follows: First, the RSD architecture with a desired doping
II. D EVICE A RCHITECTURE AND S IMULATION concentration in the Source, Drain, and Channel regions can
A schematic representation of the proposed 3-D view of be grown using ion implantation [Fig. 4(a)–(e)] on the SOI
dielectric modulated (DM) NC-FinFET biosensor with raised layer using techniques described in [24] and [25].
source drain (RSD) structure on silicon on insulator (SOI) A uniform layer of chromium deposited over the passivated
substrate is shown in Fig. 2(a). In Fig. 2(b), a 2-D view of SiO2 layer above the channel region [Fig. 4(f)] is selectively
the same device helps to visualize the T-shaped cavity region etched on either side by wet etching to form the nano cavities
formed over the 3-D channel to allow the capture of the as depicted in Fig. 4(i). To reduce the gate leakage current due
biomolecules as described in numerous publications [22], [23]. to tunneling and provide the NC effect, a thick layer of high-
Fig. 3 depicts the horizontal and vertical dimensions of the k cum ferroelectric HfO2 is deposited using plasma-enhanced
device along with the Gaussian doping profiles in the S and atomic layer deposition (PE-ALD) technique as shown in
D regions. Fig. 4(g). This is followed by gold metal deposition over the

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 5206 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 68, NO. 10, OCTOBER 2021

TABLE I
VALUES OF D IFFERENT PARAMETERS U SED FOR THE S IMULATION OF
THE P ROPOSED F IN FET B IOSENSOR

Fig. 5. Calibration of the Physical Models in simulation set up with

reported experimental data of (a) baseline FinFET [28] corresponding
to both linear (at VDS = 0.05 V) and saturation (at VDS = 0.5
V) voltage ranges and (b) metal-ferro-metal (MFM) capacitor for given
set of ferroelectric parameters [29].

source, drain gate, and body terminals of the device, which

further improves the sensitivity of the device owing to its
high conductivity [Fig. 4(h)]. Fig. 4(j) depicts the final 2-D
structure of DM NC-FinFET label-free biosensor containing the passivated SiO2 and HfO2 layers located between the
biomolecules in the cavity region. A detailed overview of the channel and the gate electrode. The dielectric constant of the
steps involved in the fabrication of the proposed biosensor is cavity region is modulated by the presence or absence of
diagrammatically represented in Fig. 4. biomolecules, which is numerically investigated with TCAD
In comparison to conventional FET-based biosensors, Fin- tool [27]. Some of the well-known biomolecules (with the
FETs have a larger fin periphery [2 × HFIN (fin height) + WFIN dielectric constant values in the parenthesis) available in liter-
(fin width)] to provide more living space for biomolecules, ature are Uricase (k = 1.54), Uriease (k = 1.64), Strptavindin
thereby exhibiting greater sensitivity than equivalent MOSFET (k = 2.1), Biotin (k = 2.63), Ferro-cytochrome (k = 4.7),
structures [26]. The simulation of the proposed biosensor is Bacteriophage T7 (k = 6.3), Keratin (k = 8), and Gelatin
carried out in the commercially available software package (k = 12) [17], [30]–[33]. We have assumed that the cavity
Sentaurus TCAD to perform an in-depth analysis of the work- is completely filled with biomolecules as is reported in the
ing of the biosensor in the presence or absence of the target previous studies [23], [34], [35]. In the cavity region, the
biomolecules [27]. The simulation is well-calibrated against presence of biomolecules influences the electrical behavior
the experimental results as shown in Fig. 5. The calibration of the device. Initially, when no biomolecule is present in
procedure is carried out in two steps: first, the baseline FinFET the cavity, the dielectric constant (k) is assumed to be unity.
is calibrated with the experimental data [28] in the linear However, at higher drain bias voltage (Vds = 0.5 V), and for
(Vds = 0.05 V) and saturation regime (Vds = 0.7 V) by suitable a higher value of k indicating the presence of biomolecules,
adjustment of the doping profiles, S/D resistances, metal work the effective oxide thickness (EOT) will decrease and the
functions, and so on. Second, the metal ferroelectric metal increase in the surface potential beneath the gate region will
(MFM) capacitor is separately calibrated with the results enhance the magnitude of the electric field beneath the channel
in [29] to extract the ferroelectric material parameters as shown region as shown in Fig. 6(a). This can be also considered
in Fig. 5(b). This is done by solving the Landau–Khalatnikov to be a direct consequence of the increase in the total gate
(L-K) equation of the electric field (E) as a function of the capacitance because of the variation in EOT in compliance
polarization (P) of the ferroelectric material with the help with the conventional MOS capacitance theory.
of Polarization Model of Sentaurus TCAD in conjunction These facts can be established from the plots of the variation
with the Poisson’s equations for charge carriers. Note that the of electric field and surface potential along the channel as a
direction of polarization of the ferroelectric material is always function of dielectric constant in Fig. 6(a) and (b). Because
considered to be perpendicular to the fin surface. All the of higher electric field along the channel direction, charge
standard physical models such as doping-dependent Shockley carriers (electrons) attain the maximum saturation velocity
Read Hall (SRH) and Auger recombination models along with while traveling toward the drain end, which causes a drop in
the thin layer inversion and accumulation layer mobility model its mobility as shown in Fig. 6(c). The increase in absolute
(IALMob) and Enormal (Lombardi) are used to model the electric field and surface potential in the channel region
carrier mobility. Fermi and OldSlotboom models are included increases the electron current density of the device [shown
to take into account the impact of bandgap narrowing. The in Fig. 6(d)], which ultimately enhances its driving current
device and cavity dimensions and the doping concentration capability and this, in particular, decreases the device’s current
used for simulation are listed in Table I. capability, as shown in Fig. 6(d). Fig. 7 illustrates the change
in the energy band diagram of the biosensor in the absence
III. R ESULTS AND D ISCUSSION (K = 1) and presence (K = 12) of the biomolecules in
the cavity region under OFF- and ON-state condition of the
A. Effect of the Presence of Biomolecules in the Cavity device. Note that the presence of biomolecules results in
To test the concept DM biosensor, a cavity or nanogap with more band bending because of the higher permittivity in the
the dimensions specified in Table I is sandwiched between cavity.

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 DIXIT et al.: SENSITIVITY ANALYSIS OF A NOVEL NC FinFET FOR LABEL-FREE BIOSENSING 5207

TABLE II
E FFECT ON (A) ION /IOFF R ATIO ; (B) T RANSCONDUCTANCE ; AND (C)
T HRESHOLD VOLTAGE OF THE P ROPOSED DM RSD NC-F IN FET
B IOSENSOR D UE TO THE E XISTENCE OF B IOMOLECULES

Fig. 6. Effect of permittivity variation of the cavity region on (a) absolute

electric field, (b) surface potential, (c) electron mobility, and (d) electron
current density along the channel direction.

Fig. 7. Impact of the presence and absence of the biomolecules on the Fig. 9. Spider chart presentation of (a) CR and (b) threshold voltage
energy band diagram under ON- and OFF-operating conditions. versus dielectric values of biomolecules.

Fig. 10. Output characteristics and output conductance (go ) behavior for
Fig. 8. Transfer characteristics behavior for of the NC-FinFET based of the NC-FinFET based label-free biosensor at air (K = 1) and presence
label-free biosensor at air (K = 1) and presence of various biomolecules of various biomolecules (K = 2.3 and 12) for at (a) VDS = 0.05 V and
(K = 2.1/2.3/4.2/6.3/12) for both logarithmic (left y-axis) and linear (right (b) VDS = 0.5 V.
y-axis) at (a) VDS = 0.05 V and (b) VDS = 0.5 V.

the device reduces with K -value. This may be attributed to

B. Sensor Electrical Behavior the reduction in saturation velocity and the carrier mobility
In this section, electrical behavior of the silicon NC-FinFET with the increase in K . Superior gate control in case of
biosensor is examined. Fig. 8(a) and (b) depicts the transfer high K -value and decrease in EOT results in better sub-
characteristic in low (VDS = 0.05 V) and high (VDS = 0.5 V) threshold characteristics of the device as is evident from the
field bias conditions. The inclusion of the biomolecules with OFF -current values in both the linear and subthreshold regimes.
higher K -value causes an inclusion of the biomolecules with Note that there is an increase in threshold voltage because of
higher K -value causes a higher threshold voltage and a the presence of biomolecules in the cavity.
reduced OFF-state current in comparison to the case of the A better view of the variation in ION -/IOFF -ratio and Vth
absence of biomolecules in the cavity. In the linear regime, (which are later used as sensitivity parameters) in both the
the ON-current increases with the increase in K -value because linear and saturation regimes to specify the absence or pres-
of better capacitive coupling and the OFF-current shows reverse ence of biomolecules can be obtained from Fig. 9(a) and (b)
trend. However, in the saturation regime, the ON-current of and listed in Table II. Fig. 10(a) and (b) depicts the output

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 5208 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 68, NO. 10, OCTOBER 2021

TABLE III
S ENSITIVITY A NALYSIS OF THE P ROPOSED DM-RSD NC-F IN FET B IOSENSOR IN T ERMS OF CR,
T HRESHOLD VOLTAGE , AND OFF -C URRENT AT D IFFERENT B IAS VOLTAGES

TABLE IV
B IOSENSOR S ENSITIVITY C OMPARISON W ITH P REVIOUSLY R EPORTED W ORK

characteristic and output conductance (go ) in the presence

of the biomolecules with K = 2.3 and 12 only. For higher
K , maximum drain current and output conductance reduce
because of maximum velocity saturation, which is similar to
the transfer characteristics. These parameters can be further
used to define the output figures of merit (FoMs): output
resistance (ro ) and intrinsic gain (gm × ro ) of the biosensor
as illustrated in Fig. 11(a) and (b). Note that the presence of
biomolecules in NC-FinFET biosensor increases the output Fig. 11. Maximum value obtained for output resistance and intrinsic gain
resistance as well as the intrinsic gain of the sensor and, for of the NC-FinFET based label-free biosensor at (a) VGS = 0.05 V
and (b) VGS = 0.5 V. The percentage increment for Gelatin biomolecule
hence, can be used as an important calibration parameter for in the output resistance and intrinsic gain are 871.17% and 119.20%,
the sensor. respectively, at VDS = 0.5 V.

C. Sensitivity Analysis where A could be any FoM of the biosensor. We have analyzed
some parameters such as IOFF , Vth , and ION -/IOFF -ratio, which
The effectiveness of any biosensor depends on its capability shows a good deviation in the presence or absence or biomole-
to detect or classify the biomolecules with high accuracy or cules. So, these quantities are used to explain the sensitivity of
precision. Hence, to define the sensitivity, we have used a the proposed biosensor. Fig. 12 gives a pictorial representation
generalized expression in the following equation: of sensitivity parameters SI OFF , SV th , and SCR for K = 2.1,
Abio − Aair 2.3, 4.7, 6.3, and 12. Note that the sensitivity parameters
S A (%) = ∗ 100 (1) exhibit similar trend of increasing uniformly increases with
Aair
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 DIXIT et al.: SENSITIVITY ANALYSIS OF A NOVEL NC FinFET FOR LABEL-FREE BIOSENSING 5209

conventional MOSFET device in terms of the lower SS and

higher current driving capability, resulting in 48.66% change
in CR in comparison to the baseline FinFET. RSD-based
geometry gives 6× times more living space to biomolecules
to reside in the cavity as compared to the conventional FET to
give better sensitivity. We have also studied the behavior of the
device in terms of electric field, surface potential, and mobility
owing to the inclusion of biomolecules in the cavity. The
impact of the variation in the transfer and output characteristics
of the device because the presence of biomolecules in the
cavity is thoroughly examined. For gelatin (k = 12), the max-
Fig. 12. Spider chart presentation of the maximum sensitivity value imum variation of 176.65%, 295.89%, and 100% is observed
versus sensitivity FoMs like SIOFF , SVth , and SCR at different dielectric
values of the biomolecules. in the CR, threshold voltage, and OFF-current, respectively,
which is much higher in comparison of the available FET
biosensors.

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