FDD770N15A — N-Channel PowerTrench® MOSFET

April 2015

FDD770N15A
N-Channel PowerTrench® MOSFET
150 V, 18 A, 77 mΩ
Features Description
• RDS(on) = 61 mΩ ( Typ.) @ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
• Fast Switching Speed
lored to minimize the on-state resistance while maintaining
• Low Gate Charge superior switching performance.
• High Performance Trench Technology for Extremely Low
RDS(on) Applications
• High Power and Current Handling Capability • DC to DC Converters
• RoHS Compliant • Synchronous Rectification for Server / Telecom PSU
• Battery Charger
• AC motor drives and Uninterruptible Power Supplies
• Off-line UPS

G G
S D-PAK

Absolute Maximum Ratings TC = 25oC unless otherwise noted.

Symbol Parameter FDD770N15A Unit
VDSS Drain to Source Voltage 150 V
- DC ±20
VGSS Gate to Source Voltage V
- AC (f > 1 Hz) ±30
- Continuous (TC = 25oC, Silicon Limited) 18
ID Drain Current A
- Continuous (TC = 100oC, Silicon Limited) 11.4
IDM Drain Current - Pulsed (Note 1) 36 A
EAS Single Pulsed Avalanche Energy (Note 2) 31.7 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
(TC = 25oC) 56.8 W
PD Power Dissipation
- Derate Above 25oC 0.46 W/oC
o
TJ, TSTG Operating and Storage Temperature Range -55 to +150 C
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds o
TL 300 C

Thermal Characteristics
Symbol Parameter FDD770N15A Unit
RθJC Thermal Resistance, Junction to Case, Max. 2.2 o
C/W
RθJA Thermal Resistance, Junction to Ambient, Max. 87

©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDD770N15A Rev. 1.2
 FDD770N15A — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FDD770N15A FDD770N15A DPAK Tape and Reel 330 mm 16 mm 2500 units

Electrical Characteristics TC = 25oC unless otherwise noted.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 - - V
ΔBVDSS Breakdown Voltage Temperature
ID = 250 μA, Referenced to 25oC - 0.0824 - V/oC
/ ΔTJ Coefficient
VDS = 120 V, VGS = 0 V - - 1
IDSS Zero Gate Voltage Drain Current μA
VDS = 120 V, VGS = 0 V, TC = 125oC - - 500
IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V - - ±100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA 2.0 - 4.0 V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 12 A - 61 77 mΩ
gFS Forward Transconductance VDS = 10 V, ID = 12 A - 20 - S

Dynamic Characteristics
Ciss Input Capacitance - 575 765 pF
VDS = 75 V, VGS = 0 V,
Coss Output Capacitance - 64 85 pF
f = 1 MHz
Crss Reverse Transfer Capacitance - 3.9 6 pF
Coss(er) Energy Related Output Capacitance VDS = 75 V, VGS = 0 V - 113 - pF
Qg(tot) Total Gate Charge at 10V - 8.4 11 nC
Qgs Gate to Source Gate Charge VDS = 75 V, ID = 12 A, - 2.7 - nC
VGS = 10 V
Qgd Gate to Drain “Miller” Charge - 1.8 - nC
Vplateau Gate Plateau Volatge (Note 4) - 5.7 - V
Qsync Total Gate Charge Sync. VDS = 0 V, ID = 6 A - 6.9 - nC
Qoss Output Charge VDS = 37.5 V, VGS = 0 V - 14 - nC
ESR Equivalent Series Resistance (G-S) f = 1 MHz - 0.5 - Ω

Switching Characteristics
td(on) Turn-On Delay Time - 10.3 30.6 ns
tr Turn-On Rise Time VDD = 75 V, ID = 12 A, - 3.1 16.2 ns
td(off) Turn-Off Delay Time VGS = 10 V, RG = 4.7 Ω - 15.8 41.6 ns
tf Turn-Off Fall Time (Note 4) - 2.8 15.6 ns

Drain-Source Diode Characteristics

IS Maximum Continuous Drain to Source Diode Forward Current - - 18 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 36 A
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 12 A - - 1.25 V
trr Reverse Recovery Time VGS = 0 V, VDD = 75 V, ISD = 12 A, - 56.4 - ns
Qrr Reverse Recovery Charge dIF/dt = 100 A/μs - 109 - nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, IAS = 4.6 A, starting TJ = 25°C.
3. ISD ≤ 12 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.

©2012 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FDD770N15A Rev. 1.2
 FDD770N15A — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

100 50
VGS = 15.0V *Notes:
10.0V 1. VDS = 10V
8.0V 2. 250μs Pulse Test
7.0V

ID, Drain Current[A]

6.5V
ID, Drain Current[A]

6.0V
5.5V 10
10
o
150 C
o
25 C

o
-55 C
*Notes:
1 1. 250μs Pulse Test
o
2. TC = 25 C
0.5 1
0.1 1 7 3 4 5 6 7
VDS, Drain-Source Voltage[V] VGS, Gate-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
0.10 100

0.09
Drain-Source On-Resistance

IS, Reverse Drain Current [A]

0.08 o
RDS(ON) [Ω],

VGS = 10V 150 C

10

0.07
o
25 C
VGS = 20V
0.06 *Notes:
1. VGS = 0V
o
*Note: TC = 25 C 2. 250μs Pulse Test
0.05 1
0 10 20 30 40 50 0.4 0.6 0.8 1.0 1.2 1.4
ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

1000 10
VGS, Gate-Source Voltage [V]

Ciss VDS = 30V

8 VDS = 75V
VDS = 120V
100
Capacitances [pF]

6
Coss

*Note: 4
10 1. VGS = 0V
2. f = 1MHz
2
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd Crss
Crss = Cgd *Note: ID = 12A
1 0
0.1 1 10 100 200 0 2 4 6 8 10
VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC]

©2012 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FDD770N15A Rev. 1.2
 FDD770N15A — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature
1.10 2.4
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
2.0
1.05
BVDSS, [Normalized]

RDS(on), [Normalized]
1.6

1.00
1.2

0.95
*Notes: 0.8 *Notes:
1. VGS = 0V 1. VGS = 10V
2. ID = 250μA 2. ID = 12A
0.90 0.4
-80 -40 0 40 80 120 160 -80 -40 0 40 80 120 160
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
60 20

10
ID, Drain Current [A]

100μs 15
ID, Drain Current [A]

1ms VGS = 10V

1 Operation in This Area 10ms 10
is Limited by R DS(on) 100ms
DC
SINGLE PULSE
0.1 o
TC = 25 C 5
o
TJ = 150 C
o o
RθJC = 2.2 C/W RθJC = 2.2 C/W
0.01 0
1 10 100 200 25 50 75 100 125 150
o
VDS, Drain-Source Voltage [V] TC, Case Temperature [ C]

Figure 11. Eoss vs. Drain to Source Voltage Figure 12. Unclamped Inductive
Switching Capability
0.8 20
IAS, AVALANCHE CURRENT (A)

0.6 10

TJ = 25 oC
EOSS, [μJ]

0.4
TJ = 125 oC

0.2

0.0 1
0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
VDS, Drain to Source Voltage [V]
tAV, TIME IN AVALANCHE (ms)

©2012 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FDD770N15A Rev. 1.2
 FDD770N15A — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)

Figure 13. Transient Thermal Response Curve

2.5

θJC [Z [ C/W]
]
o
0.5
1
Response
Response

0.2
PDM
0.1
(t), Thermal

t1
0.05 t2
Thermal

0.02 *Notes:
0.01 o
1. ZθJC(t) = 2.2 C/W Max.
0.1
ZθJC

Single pulse
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.05
10
-5 -4
10 10
-3
10
-2
10
-1
1
Rectangular Pulse
t1, Rectangular PulseDuration
Duration [sec]
[sec]

©2012 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FDD770N15A Rev. 1.2
 FDD770N15A — N-Channel PowerTrench® MOSFET
IG = const.

Figure 14. Gate Charge Test Circuit & Waveform

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
V
10V
GS
DUT
td(on) tr td(off)
tf
t on t off

Figure 15. Resistive Switching Test Circuit & Waveforms

VGS

Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms

©2012 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FDD770N15A Rev. 1.2
 FDD770N15A — N-Channel PowerTrench® MOSFET
DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms

©2012 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FDD770N15A Rev. 1.2
 FDD770N15A — N-Channel PowerTrench® MOSFET
VCC

Driver
VGS
( Driver)
t

VGS 10V
VDD (DUT)
t

VRG
DUT
RG

1
⋅ VR ( t ) dt
RG ∫ G
Qsync =
VGS

Figure 18. Total Gate Charge Qsync. Test Circuit & Waveforms

©2012 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FDD770N15A Rev. 1.2
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