Power Diode Notes
Power Diode Notes
It is diode handling a more capacity of power than the normal pn junction diode.
● The simplest semiconductor device is a power diode having only two layers (P and N),
two terminals (namely anode A and cathode K) and one junction. The symbol of the
power diode is the same as the PN junction diode.
● It is called power diode because it is used in high power circuits.(circuits with high supply
voltage or current)
Basic Structure
● Power diode is similar to the PN junction diode but has a small difference in its
construction. The doping level of both P and N sides is the same and we get the PN
junction formed.
● But in power diodes we have a junction formed between a heavily doped P+ and a lightly
doped N- layer which is epitaxially grown on a heavily doped N+ substrate (cathode). A
heavily doped layer P+ is diffused into the N- layer to form the anode. The basic
structure shown below in Fig. 1.7.2.
● The N- drift region thickness determines the reverse breakdown voltage of the diode. For
higher breakdown voltages, the drift region is wide. Its function is to absorb the depletion
layer of the reverse biased P+ N- junction.
● N- Layer will add significant ohmic resistance to the diode when it is forward biased
because it is lightly doped. As the N- layer is lightly doped nearly intrinsic, this layer is
also called as i-layer and the device can be called PIN diode.
Working of Power Diode
● I-V (Amp-Volt) characteristics of a power diode are same as that of PN junction diode as
shown below. Cut-in voltage (knee voltage) of PN junction diode is 0.7 V while in power
diode it is 1 V.
Reverse Recovery or Turn off characteristics
Power diodes are classified into three major categories which are a
follows:
● General purpose diode
● Fast recovery diodes
● Schottky diodes
Power diodes