CONTENTS

P.4
P.5
UV
Devices for UV Detection
P.2 What is UV ?
Features of Hamamatsu’s devices for UV detection
Lineup
Product information
- Si photodiodes P.6 - 11 - CCD area image sensors P.14 - 15
- Si APD P.12 - 13 - CMOS linear image sensors P.16 - 18
Feb. 2024 - Mini-spectrometers P.19
 What is ultraviolet light?
Visible light, meaning light visible to the human eye, has a spectral range of approximately 400 to 700 nm. Light with
shorter wavelengths is called ultraviolet light (UV). Ultraviolet light is used in a wide range of applications as light sources
and detection sensors, from industries fields such as semiconductor manufacturing/inspection and food processing, to
familiar places such as fire alarms and skin care against UV. Also, ultraviolet light has attracted attention as a key
technology for sterilization and inactivation of the novel coronavirus. It is expected that UV technologies will become
increasingly popular in the future.
Hamamatsu provides a wide range of detectors with features such as UV high sensitivity and high UV resistance by
opto-semiconductor technology amassed over many years.

Features of our devices for UV detection

Feature 1 High sensitivity in UV region Feature 2 High UV resistance

Normal silicon sensors can detect ultraviolet light, but some Generally, resin that generates outgas, deteriorating sensitivity
ultraviolet light is absorbed as it passes through window of the chip, is used for adhesives such as window materials and
material and packages. Hamamatsu has improved conversion chips, in a silicon sensor. Hamamatsu uses a resin-free package
efficiency by adopting a chip structure suitable for ultraviolet to reduce generation of outgas and realize high resistance to
light detection. By adopting a window material that easily ultraviolet light exposure.
transmits ultraviolet light and a package without window
material, we have realized a high sensitivity in the ultraviolet
region.

Spectral response in UV region (typical example) Changes to spectral sensitivity due to UV light irradiation
[ CMOS linear image sensors S15908-512Q, S15909-1024Q ] [ Si photodiode S12698 series ]

(Ta=25 °C) (Typ. Ta=25 °C, D2 lamp: 30 W, irradiation distance: approx. 70 mm, irradiation time: 1000 h)
0.12 110

S15908-512Q, S15909-1024Q 100

0.10
90
Photosensitivity (A/W)

Rate of change (%)

0.08 S12698 series

80

0.06 70

60 Conventional type
0.04
General CMOS image sensor
50
0.02
40

0 30
200 220 240 260 280 300 190 300 400 500 600

Wavelength (nm) Wavelength (nm)

KMPDB0628EA KSPDB0355EA

2
 Feature 3 "Flexibility" that can be achieved by consistent in-house production

Hamamatsu has established an integrated production system in our own factory, from the design to the assembly and
inspection of optical semiconductor devices.This is why we are flexible and offer products customized according to
customers’ requests.Customization examples include adding filters on window materials, tiling chips into 1D or 2D arrays,
segmenting a detector’s photosensitive area, changing the package shape, and adding an electronic cooling element.

Customization examples

Window material

Choose from quartz, sapphire, no windows, and more. We can also form filters on the window material.

Spectral response of image sensor for each window material Product example with filter
(Typ. Ta=25 °C)

100 Without window

Sapphire
Quartz
Quantum efficiency (%)

80

Image sensor with filter on window material

60

40

20

0
100 200 300 400 Photodiode with band-pass filter
Wavelength (nm)
KMPDB0612EA

Package Photosensitive area

Choose from DIP (Dual Inline Package) type, surface In image sensors, we can customize the pixel size and
mount type, etc. We can also change the package number of pixels. We offer pixel sizes as small as 7 μm.
shape and incorporate TE-coolers inside the package. We can also change pixel size and number of pixels to
configurations other than square.

Pixel size: 14 × 14 μm
Number of pixels: 1024 × 16

CCD image sensor S10420-1004-01

DIP type (built-in TE-cooler)

Pixel size: 12 × 12 μm
Number of pixels: 2048 × 2048

Surface mount type

CCD area image sensor S12101

3
 Lineup

Hamamatsu offers a wide range of detectors, including Si photodiodes, Si APDs and CCD/CMOS image sensors, as well as
modules equipped with these detectors.

Product name Type no. Photo Page

S16586
S12698 series
S15289-33
S10043
Si photodiode
S8552, S8553 P. 6 to 11
Si PIN photodiode S12742 series
S16014-220
S1226/S1227 series
S1336/S1337 series

S14124-20 P. 12, 13
Si APD
S12053 series

S10420-01 series
CCD image sensor P. 14, 15
S7030/S7031 series

S11639-01 series
CMOS image sensor S11639N-02 P. 16 to 18
S15908-512Q, S15909-1024Q

Mini-spectrometer C16767MA P. 19

4
Product information

5
 Product information

Si PIN photodiode High UV Resistance

S16586

FEATURES

APPLICATIONS

Spectral response Cutoff frequency vs. Reverse voltage

(Typ. Ta=25 ℃) (λ=409 nm, RL=50 Ω, -3 dB)

800 1G

700

600
Photosensitivity (mA/W)

QE=100%
Cutoff frequency (Hz)

500

400 100 M

300

200

100

0 10 M
400 600 800 1000 0.1 1 10 100

Wavelength (nm) Reverse voltage (V)

KSPDB0442EA KSPDB0448EA

Structure
Unit
Photosensitive area size 0.8 mm
Package TO-18 -
Window material UV glass -

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Unit
Spectral response range 190 1000 mm
Cutoff frequency*1 300 MHz
Terminal capacitance*2 3.5 pF
*1: VR=10 V, RL=50 Ω, -3 dB
*2: VR=10 V, f=1 MHz
6
 Si photodiodes High UV Resistance

S12698 series

FEATURES
With UV glass window (hermetically sealed)
High reliability for monitoring UV light irradiation
No resin that causes outgassing

APPLICATIONS
Power monitor for UV light sources
Analytical instrument

Spectral response Changes in spectral response after irradiated with UV light

(Typ. Ta=25 °C) (Typ. Ta=25 °C, D2 lamp: 30 W,

0.4 irradiation distance: approx. 70 mm, irradiation time: 1000 h)
110

100

0.3
90
Photosensitivity (A/W)

Rate of change (%)

S12698 series
80

0.2
70

60 Conventional type

0.1
50

40
0
30
190 400 600 800 1000
190 300 400 500 600

Wavelength (nm) Wavelength (nm)

KSPDB0350EB KSPDB0355EA

Structure
Parameter S12698 S12698-01 S12698-04 S12698-02 Unit
Photosensitive area size 1.1 × 1.1 2.4 × 2.4 3.6 × 3.6 5.8 × 5.8 mm
Package TO-18 TO-5 TO-8 -
Window material UV glass -

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Parameter S12698 S12698-01 S12698-04 S12698-02 Unit
Spectral response range 190 to 1000 nm
Peak sensitivity wavelength 800 nm
Photosensitivity* 1
0.38 A/W
Dark current*2 10 30 50 100 pA
Temp. coefficient of dark current 1.12 times/°C
Rise time*3 0.1 0.5 0.6 1.5 μs
Terminal capacitance*4 25 230 240 700 pF
*1: λ=λp *2: VR=10 mV *3: VR=0 V, RL=1 kΩ, λ=655 nm *4: VR=0 V, f=10 kHz

7
 Product information

Si photodiode High UV Resistance

S15289-33

FEATURES
High sensitivity in UV region: QE=75% ( )
High reliability in UV light irradiation
Compatible with lead-free solder reflow

APPLICATIONS
Light level monitor for UV light source
Analytical instruments

Spectral response Changes in spectral response after irradiated with UV light

(Typ. Ta=25 °C, D2 lamp: 30 W, irradiation distance:
(Typ. Ta=25 °C) approx. 70 mm, irradiation time: 1000 h)
0.7 110
Relative sensitivity to the initial value (%)

0.6 100
QE=100%
90
Photosensitivity (A/W)

0.5
S15289-33
80
0.4 Previous product
70
0.3
60
0.2
50

0.1 40

0 30
190 300 400 500 600 700 800 900 1000 1100 190 300 400 500 600

Wavelength (nm) Wavelength (nm)

KSPDB0394EA KSPDB0395EA

Structure
Parameter Specification Unit
Package size 3×3 mm
Photosensitive area size 2.5 × 2.5 mm
Package Glass epoxy -
Window material None -

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Parameter Specification Unit
Spectral response range 190 to 1100 nm
Peak sensitivity wavelength 1000 nm
λ=200 nm 0.12
Photosensitivity A/W
λ=1060 nm 0.54
Dark current*1 10 pA
Temp. coefficient of dark current 1.15 times/°C
Rise time*2 50 μs
Terminal capacitance* 3
70 pF
*1: VR=10 mV *2: VR=0 V, RL=1 kΩ, λ=650 nm, 10 to 90% *3: VR=0 V, f=10 kHz

8
 Product information

Si photodiode for VUV Detection

S10043, S8552/S8553

FEATURES
Greatly improved sensitivity stability even
after exposure to ArF (λ=193 nm) excimer laser
Windowless package

APPLICATIONS
Vacuum UV monitor
Excimer laser monitor

Spectral response Variation in sensitivity due to VUV exposure

[Typ. Ta=25 ˚C, ArF excimer laser, 0.1 mJ/cm2/pulse, f=100 Hz,
(Typ. Ta=25 ℃) λ=193 nm, pulse width=15 ns (FWHM)]
0.6 120
S10043

0.5 100
S8552/S8553
Relative sensitivity (%)
Photosensitivity (A/W)

0.4 80 S8552, S8553

0.3 60

0.2 40
S1227/S1337 series
S10043 (unsealed product)
0.1 20

0 0
100 200 300 400 500 600 700 800 900 1000 1100 1 × 106 5 × 106 1 × 107

Wavelength (nm) Number of shots

KSPDB0449EA KSPDB0264EE

Structure
Parameter S10043 S8552 S8553 Unit
Photosensitive area size 10 × 10 18 × 18 mm
Package Ceramic -
Window material None -

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Parameter S10043 S8552 S8553 Unit
Spectral response range 190 to 1100 nm
Peak sensitivity wavelength 720 780 nm
Photosensitivity*1 15 60 mA/W
Dark current*2 0.1 0.05 0.1 nA
Rise time *3
9 18 μs
Terminal capacitance*4 4 8 pF
*1: λ=193 nm *2: VR=10 mV *3: VR=0 V, RL=1 kΩ, 10 to 90% *4: VR=0 V, f=10 kHz

9
 Si photodiodes for Monochromatic Light

S12742 series, S16014-220

FEATURES
With monochromatic light filter
arrow spectral response half width (FWHM): 10 nm typ.

APPLICATIONS
Water quality and atmosphere analysis
UV monitors (mercury lamp, etc.)

Spectral response
(Typ. Ta=25 °C)
30
Photosensitivity (mA/W)

S12742-254
20

S12742-220, S16014-220

10

S12742-275
The S12742 series can be customized to support
other peak sensitivity wavelengths such as 340 nm
and 560 nm.
0
200 300 400 500 600

Wavelength (nm)
KSPDB0450EA

Structure
Parameter S16014-220 S12742 Unit
Photosensitive area size 1.1 × 1.1 3.6 × 3.6 mm
Package TO-18 TO-5 -
Window material -

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
S16014-220 S12742-220 S12742-254 S12742-275 Unit
Center wavelength 220 254 275 mm
Spectral response half width 11 10 nm
Photosensitivity* 1
6 18 10 mA/W
Dark current* 2
1 25 pA
Rise time* 3
0.1 1 μs
Terminal capacitance* 4
25 500 pF
*1: λ=Center wavelength *2: VR=10 mV *3: VR=0 V, RL=1 kΩ *4: VR=0 V, f=10 kHz

10
 Product information

Si photodiodes High UV Sensitivity

S1226 / S1227 / S1336 / S1337 series

FEATURES
High UV sensitivity
IR sensitivity suppressed type (S1226/S1227 series)
High sensitivity in UV to near IR range (S1336/S1337
series)

APPLICATIONS
Analytical equipment
Optical measurement equipment

Spectral response

S1226/S1227-BQ series S1336/S1337-BQ series

(Typ. Ta=25 °C) (Typ. Ta=25 °C)

0.7 0.7

0.6 0.6
S1337-21
Photosensitivity (A/W)
Photosensitivity (A/W)

0.5 0.5

0.4 0.4

0.3 0.3
S1337-BQ series
0.2 0.2

0.1 0.1

0 0
190 400 600 800 1000 190 400 600 800 1000

Wavelength (nm) Wavelength (nm)

KSPDB0094EC KSPDB0404EA

Structure
Parameter S1226 series S1227 series S1336 series S1337 series Unit
1.1 × 1.1 to 1.1 × 5.9 to 1.1 × 1.1 to 1.1 × 5.9 to
Photosensitive area size mm
5.8 × 5.8 10 × 10 5.8 × 5.8 18 × 18
Package Metal Ceramic Metal Ceramic -
Window material Quartz glass -

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Parameter S1226/S1227 series S1336/S1337 series Unit
Spectral response range 190 to 1000 190 to 1100 nm
Peak sensitivity wavelength 720 960 nm
Photosensitivity* 1
0.12 A/W
*1: λ=200 nm

11
 Si APD High UV Sensitivity

S14124-20

FEATURES
High sensitivity: QE=87% (λ=266 nm)
Low capacitance
Low noise

APPLICATIONS
Semiconductor inspection system
Laser processing equipment

Spectral response Gain vs. reverse voltage

(Typ. M=1, Ta=25 °C) (Typ. Ta=25 °C, λ=266 nm)

100 1000

80 -20 °C
Quantum efficiency (%)

100
60 0 °C
Gain

20 °C
40 40 °C
10
60 °C
20

0 1
200 240 280 320 360 400 200 250 300 350 400 450

Wavelength (nm) Reverse voltage (V)

KAPDB0568EA KAPDB0570EA

Structure
Parameter Specification Unit
Photosensitive area size 2.0 mm
Package TO-8 -
Window material AR-coated quartz -

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Parameter Specification Unit
Peak sensitivity wavelength* 1
600 nm
Breakdown voltage*2 400 V
Temp. coefficient of breakdown voltage 0.78 V/°C
Dark current (max.)* 1
3 nA
Terminal capacitance*3 11 pF
Cutoff frequency* 4
250 MHz
Gain*5 50 to 400 -
*1: M=50 *2: ID=10 μA *3: M=50, f=1 MHz *4: M=50, λ=266 nm, RL=50 Ω, -3dB *4: VR=0 V, f=10 kHz

12
 Product information

Si APD High UV Sensitivity

S12053 series

FEATURES
High sensitivity in UV to visible range
Low noise

APPLICATIONS
Low-light-level measurement
Analytical instrument

Spectral response Gain vs. reverse voltage

(Typ. Ta=25 °C) (Typ. λ=650 nm)

100 103

-20 °C
80
Quantum efficiency (%)

102 0 °C
60
20 °C
Gain

40 40 °C
101
60 °C

20

0 100
200 400 600 800 1000 130 140 150 160

Wavelength (nm) Reverse voltage (V)

KAPDB0023EB KAPDB0011EC

Structure
Parameter S12053-02 S12053-05 S12053-10 Unit
Photosensitive area size 0.2 0.5 1.0 mm
Package TO-8 -
Window material UV glass -

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Parameter S12053-02 S12053-05 S12053-10 Unit
Spectral response range 200 to 1000 nm
Peak sensitivity wavelength 620 nm
Breakdown voltage*1 150 V
Temp. coefficient of breakdown voltage 0.14 V/°C
Dark current 0.2 nA
Terminal capacitance 2 5 15 pF
Cutoff frequency*2 900 400 250 MHz
Gain*3 50 -
*1: ID=100 μA *2: RL=50 Ω *3: λ=650 nm

13
 CCD area image sensors High UV Resistance

S10420-1106NU-01, S10420-1106NW-01

FEATURES
Improved etaloning characteristics
High UV resistance
With anti-blooming function

APPLICATIONS
Spectrometers

Spectral response Variation in sensitivity due to UV exposure

(Typ. Ta=25 °C)
100 110
S11071 series
S10420-1004-01/-1006-01 100
S10420-1104-01/-1106-01
80 90
Improved type
Quantum efficiency (%)

80
Relative sensitivity (%)

70
60
60
Previous type
50
40 S10420-1106NW-01
40

30
S10420-1106NU-01
20 20

10
0 0
100 200 400 600 800 1000 1200
Irradiation level (A.U.)
Wavelength (nm) * The graph is plotted as 100% at the average spectral response
(λ=200 to 400 nm) before irradiation.
KMPDB0578EB KMPDB0610EA

Structure
Parameter Specification Unit
Pixel size 14 × 14 mm
Number of eff effective pixels 2048 × 64 -
Package 24-pin ceramic DIP -
Window material Quartz glass -

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Parameter S10420-1106NU-01 S10420-1106NW-01 Unit
Spectral response range 200 to 1100 120 to 1100 nm
Vertical 60
Full well capacity ke-
Horizontal 300
Conversion efficiency 6.5 μV/e-
Dark current 50 e-/pixel/s
Readout noise* 1
6 e- rms
Dynamic range* 2
50000 -
Photoresponse nonuniformity* 3
±3 %
*1: Ta=-40 °C, operating frequency: 20 kHz *2: Dynamic range = Full well capacity / Readout noise
*3: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 660 nm)

14
 Product information

CCD area image sensors High UV Resistance

S7030/S7031 series

FEATURES
Non-cooled type (S7030 series), One-stage TE-cooled type (S7031 series)
Line / PIxel binning
High UV resistance: U type, W type

APPLICATIONS
Fluorescence spectrometer, ICP
Spectrometers

Spectral response Variation in sensitivity due to UV exposure

(Typ. Ta=25 ℃)
100 110
S7030/S7031 series
90 (U type) 100

80 S7030/S7031 series 90
Improved type
(standard type)
Quantum efficiency (%)

80
Relative sensitivity (%)
70

60 70

60
50 Previous type
S7030/S7031 series (W type) 50
40
40
30
30
20
20
10 10
0 0
100 200 300 400 500 600 700 800 900 1000 1100 1200
Irradiation level (A.U.)
Wavelength (nm) * The graph is plotted as 100% at the average spectral response
(λ=200 to 400 nm) before irradiation.
KMPDB0598EB KMPDB0610EA

Structure
Parameter S7030-1006U/W S7030-1007U/W S7031-1006SU/SW S7031-1007SU/SW Unit
Pixel size 24.5 × 1.3 24.5 × 2.9 24.5 × 1.3 24.5 × 2.9 mm
Number of effective pixels 1024 × 58 1024 × 122 1024 × 58 1024 × 122 -
Package 24-pin ceramic DIP -
Window material Quartz glass AR-coated sapphire -

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Parameter U type W type Unit
Spectral response range 200 to 1100 120 to 1100 nm
Vertical 320
Full well capacity*1 ke-
Horizontal 1000
Conversion efficiency 2.2 μV/e-
Dark current 50 e-/pixel/s
Readout noise* 2
8 e- rms
Dynamic range*3 Line binning 125000
-
Area scanning 4000
Photoresponse nonuniformity*4 ±3 %
*1: The linearity is ±1.5%. *2: Ta=-40 °C, operating frequency: 150 kHz *3: Dynamic range = Full well capacity / Readout noise
*4: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 660 nm)

15
 CMOS linear image sensor High UV Sensitivity

S11639-01, S11639-21

FEATURES
Simultaneous charge integration for all pixels
5 V single power supply operation
Built-in timing generator allows operation with only
start and clock pulse inputs

APPLICATIONS
Spectrometers
Position detection

Spectral response (typical example) Spectral response in UV region (typical example)

(Ta=25 °C) (Ta=25 °C)

0.5 0.16

0.4 S11639-01
0.12 S11639-21
Photosensitivity (A/W)
Photosensitivity (A/W)

0.3

0.08
Previous type S11639
0.2

0.04
0.1

0 0
200 400 600 800 1000 1200 200 220 240 260 280 300

Wavelength (nm) Wavelength (nm)

KMPDB0467EB KMPDB0718EA

Structure
Parameter S11639-01 S11639-21 Unit
Pixel height μm
Pixel pitch μm
Number of effective pixels -
Package LCP (liquid crystal polymer) -
Window material -

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Parameter Specification Unit
Spectral response range 200 to 1000 nm
Saturation output voltage*1 2.0 V
Conversion efficiency 25 μV/e-
Dark output voltage*2 0.2 mV
Readout noise 0.4 mV rms
Dynamic range*3 5000 -
Photoresponse nonuniformity* 4
±2 %
*1: Difference from output offset voltage *2: Integration time=10 ms *3: Dynamic range = Saturation output voltage / Readout noise
*4: Measured at one-half of the saturation output

16
 CMOS linear image sensor High sensitivity in vacuum UV region

S11639N-02

FEATURES
Simultaneous charge integration for all pixels
5 V single power supply operation
Built-in timing generator allows operation with only
start and clock pulse inputs

APPLICATIONS
Spectrometers

Spectral response (typical example) Spectral response in UV region (typical example)

(Ta=25 °C) (Ta=25 °C)

0.5

S11639N-02
0.4
Photosensitivity (A/W)
Photosensitivity (A/W)

S11639N-02

0.3

0.2

Previous type S11639N-01

0.1 Previous type S11639N-01

0 0
200 400 600 800 1000 1200

Wavelength (nm) Wavelength (nm)

KMPDB0537JA KMPDB0538JA

Structure
Parameter Specification Unit
Pixel height 200 μm
Pixel pitch 14 μm
Number of effective pixels 2048 -
Package LCP (liquid crystal polymer) -
Window material None* 1 -
*1: Temporary window
The S11639N-02 is shipped with the package held with glass tape. Remove the grass when using.

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Parameter Specification Unit
Spectral response range 140 to 1000 nm
Saturation output voltage*2 2.0 V
Conversion efficiency 20 μV/e-
Dark output voltage*3 0.2 mV
Readout noise 0.4 mV rms
Dynamic range*4 5000 -
Photoresponse nonuniformity* 5
±2 %
*2: Difference from output offset voltage *3: Integration time=10 ms *4: Dynamic range = Saturation output voltage / Readout noise
*5: Measured at one-half of the saturation output

17
 Product information

CMOS linear image sensors High UV Sensitivity

S15908-512Q, S15909-1024Q

FEATURES
Suppress fringe of spectral response curve from UV to IR
Low dark current
Large saturation output charge
Variable integration time for each pixel

APPLICATIONS
Spectrophotometry

Spectral response (typical example) Spectral response in UV region (typical example)

(Ta=25 °C) (Ta=25 °C)
0.4 0.12

S10121 to S10124 series (-01)

0.10
0.3
Photosensitivity (A/W)

Photosensitivity (A/W)

0.08

0.2 0.06

0.04
Previous type
0.1
0.02

0 0
200 400 600 800 1000 1200 200 220 240 260 280 300

Wavelength (nm) Wavelength (nm)

KMPDB0623EA KMPDB0624EA

Structure
Parameter S15908-512Q S15909-1024Q Unit
Pixel height 2.5 mm
Pixel pitch 50 25 μm
Number of effective pixels 512 1024 -
Package Ceramic -
Window material Quartz -

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Parameter S15908-512Q S15909-1024Q Unit
Spectral response range 200 to 1000 nm
Saturation output charge 200 100 pC
Dark current 0.03 pA
Photo response non-uniformity (max.)* ±3 %
* Measured at one-half of the saturation output

18
 Product information

Mini-spectrometers High UV Sensitivity

C16767MA

FEATURES

APPLICATIONS

Spectral response at UV region (typical example) Spectral resolution vs. wavelength (typical example)

(Ta=25 ℃) (Ta=25 ℃)
100 12

10
80
Spectral resolution (nm)
Relative sensitivity (%)

8
60

40
4

20
2

0 0
100 200 300 400 500 200 300 400 500

Wavelength (nm) Wavelength (nm)

KACCB0746EA KACCB0747EA

Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted), structure
Parameter Symbol Value Unit
Spectral response range λ 190 440 nm
Spectral resolution (FWHM) - 5.5 nm
Wavelength reproducibility λr -0.5 +0.5 nm
Wavelength temperature dependence λTd -0.07 +0.07 nm/
Dimensions (W × D × H) - 20.1 × 12.5 × 10.1 mm
Weight - 5 g

Mini-spectrometer micro series evaluation circuit C13016 (sold separately)

The C13016 is a circuit board designed to simply evaluate the characteristics of the
minispectrometermicro series. The characteristics of the micro series can be
evaluated usingthe evaluation software by connecting the mini-spectrometer micro
series to a PC with a USB cable A9160 (AB type, sold separately).
19
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

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France: HAMAMATSU PHOTONICS FRANCE S.A.R.L.: 19 Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected]
United Kingdom: HAMAMATSU PHOTONICS UK LIMITED: 2 Howard Court,10 Tewin Road, Welwyn Garden City, Hertfordshire, AL7 1BW, UK, Telephone: (44)1707-294888, Fax: (44)1707-325777 E-mail: [email protected]
North Europe: HAMAMATSU PHOTONICS NORDEN AB: Torshamnsgatan 35, 16440 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected]
Italy: HAMAMATSU PHOTONICS ITALIA S.R.L.: Strada della Moia, 1 int. 6 20044 Arese (Milano), Italy, Telephone: (39)02-93 58 17 33, Fax: (39)02-93 58 17 41 E-mail: [email protected]
China: HAMAMATSU PHOTONICS (CHINA) CO., LTD.: 1201, Tower B, Jiaming Center, 27 Dongsanhuan Beilu, Chaoyang District, 100020 Beijing, P.R. China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected]
Taiwan: HAMAMATSU PHOTONICS TAIWAN CO., LTD.: 13F-1, No.101, Section 2, Gongdao 5th Road, East Dist., Hsinchu City, 300046, Taiwan(R.O.C) Telephone: (886)3-659-0080, Fax: (886)3-659-0081 E-mail: [email protected]

Cat. No. KOTH0022E05 Feb. 2024