TIC206 SERIES

SILICON
TRIACS
Copyright © 1997, Power Innovations Limited, UK DECEMBER 1971 - REVISED MARCH 1997

● Sensitive Gate Triacs

● 4 A RMS TO-220 PACKAGE

(TOP VIEW)
● Glass Passivated Wafer

● 400 V to 800 V Off-State Voltage MT

● Max IGT of 5 mA (Quadrants 1 - 3) 1

MT 1
2
2 3
G

Pin 2 is in electrical contact with the

mounting base.
MDC2ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
TIC206D 400
TIC206 600
Repetitive peak off-state voltage (see Note 1) VDRM V
M 700
TIC206 800
S
TIC206
N
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) IT(RMS) 4 A
Peak on-state surge current full-sine-wave (see Note 3) ITSM 25 A
Peak on-state surge current half-sine-wave (see Note 4) ITSM 30 A
Peak gate current IGM ±0.2 A
Peak gate power dissipation at (or below) 85°C case temperature (pulse width 200 PGM 1.3 W
s)
Average gate power dissipation at (or below) 85°C case temperature (see Note 5) PG(AV) 0.3 W
Operating case temperature range TC -40 to °C
+110
Storage temperature range Tstg -40 to °C
+125
Lead temperature 1.6 mm from case for 10 seconds TL 230 °C
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case
temperature at the rate of 160 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of
on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the
surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of
on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the
surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Repetitive peak
IDRM VD = rated VDRM IG = 0 TC = 110°C ±1 mA
off-state current
Vsupply = +12 V† RL = 10  tp(g) > 20 s 0.5 5
Peak gate trigger Vsupply = +12 V† RL = 10  tp(g) > 20 s -1.5 -5
IGTM mA
current Vsupply = -12 V† RL = 10  tp(g) > 20 s -2 -5
Vsupply = -12 V† RL = 10  tp(g) > 20 s 3.6 10
Vsupply = +12 V† RL = 10  tp(g) > 20 s 0.7 2
Peak gate trigger Vsupply = +12 V† RL = 10  tp(g) > 20 s -0.7 -2
VGTM V
voltage Vsupply = -12 V† RL = 10  tp(g) > 20 s -0.8 -2
necessarily include testing of all
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TIC206
SERIES
Vsupply = -12 V† RL = 10  tp(g) > 20 s 0.8 2
† All voltages
DECEMBER 1971are with respect
- REVISED to Main Terminal 1.
MARCH

PRODUCT I NFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not

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 TIC206 SERIES
SILICON
TRIACS

electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

VTM Peak on-state ITM = ±4.2 A IG = 50 mA (see Note 6) ±1.3 ±2.2 V
voltage
Vsupply = +12 V† IG = 0 Init’ ITM = 100 mA 2 15
IH Holding current mA
Vsupply = -12 V† IG = 0 Init’ ITM = -100 mA -4 -15
Vsupply = +12 V† 30
IL Latching current (see Note 7) mA
Vsupply = -12 V† -30
Critical rate of rise
dv/dt of VDRM = Rated IG = 0 TC = 110°C ±50 V/µs
VDRM
off-state voltage
Critical rise of
dv/dt(c) VDRM = Rated ITRM = ±4.2 A TC = 85°C ±1 ±1.3 ±2.5 V/µs
commutation
VDRM
voltage
† All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, tp = 1 ms, duty cycle 2 %. Voltage-sensing contacts
separate from the current carrying contacts are located within 3.2 mm from the device body.
7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following
characteristics: RG = 100 , tp(g) = 20 s, tr = 15 ns, f = 1 kHz.

thermal characteristics
PARAMETER MIN TYP MAX UNIT
RJC Junction to case thermal resistance 7.8 °C/W
RJA Junction to free air thermal resistance 62.5 °C/W

TYPICAL CHARACTERISTICS

GATE TRIGGER CURRENT GATE TRIGGER VOLTAGE

vs vs
TEMPERATURE TEMPERATURE
TC05AA TC05AB
1000 10
VIsupply VAA = ± 12 V
GTM
R = 10   Vsupply IGTM VAA = ± 12 V
L
+ + + + R = 10 
tw(g) = 20 µs
VGT - Gate Trigger Voltage -

L
+ - - }
IGT - Gate Trigger Current -

+ tw(g) = 20 µs
100- - - -
- + - + }

10 1

0·1 0·1
-60 -40 -20020406080100 120 -60 -40 -20020406080100 120
TC - Case Temperature
Figure 1. - °CTC - Case Temperature - °C Figure 2.

PRODUCT I NFORMATION

necessarily include testing of all

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 TIC206
SERIES
DECEMBER 1971 - REVISED MARCH

TYPICAL CHARACTERISTICS

HOLDING CURRENT GATE FORWARD VOLTAGE

vs vs
CASE TEMPERATURE GATE FORWARD CURRENT
TC05AD TC05AC
100 10

VAA = ± 12 V IG = 0
Initiating ITM = 100 mA

VGF - Gate Forward Voltage -

IH - Holding Current -

10 1

1Vsupply 0·1 IA = 0
+ TC = 25 °C
-

QUADRANT 1
0·1 0·01
-60 -40 -20 0 20 40 60 80100 120 0·0001 0·001 0·01 0·1 1
TC - Case Temperature - °CIGF - Gate Forward Current - A
Figure 3. Figure 4.

LATCHING CURRENT
vs
CASE TEMPERATURE
TC05AE
100

Vsupply IGTM VAA = ± 12 V

++
+-
--
-+
IL - Latching Current -

10

1
-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
Figure 5.

PRODUCT I NFORMATION

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 TIC206
SERIES
DECEMBER 1971 - REVISED MARCH

MECHANICAL DATA
TO-220
3- pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated
within a plastic compound. The compound will withstand soldering temperature with no
deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. Leads require no additional cleaning or processing when used in soldered
assembly.
TO220
4,70
4,20

10,4 1,32
ø 3,96 10,0 2,95 1,23
3,71
2,54
see Note B

6,6
6,0

15,90
14,55

see Note C
6,1
3,5

14,1
12,7
1,70
0,97 1,07
0,61

123

2,74 0,64
2,34 0,41

5,282,90
4,882,40

VERSION 1 VERSION 2

ALL LINEAR DIMENSIONS IN MILLIMETERS

NOTES: A. The centre pin is in electrical contact with the mounting tab. MDXXBE
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package
version. Version 1, 18.0 mm. Version 2, 17.6 mm.

PRODUCT I NFORMATION

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 TIC206
SERIES
DECEMBER 1971 - REVISED MARCH

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue
any semiconductor product or service without notice, and advises its customers to verify, before
placing orders, that the information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of
sale in accordance with PI's standard warranty. Testing and other quality control techniques are
utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters
of each device is not necessarily performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance,
or infringement of patents or services described herein. Nor is any license, either express or implied,
granted under any patent right, copyright, design right, or other intellectual property right of PI
covering or relating to any combination, machine, or process in which such semiconductor products
or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO

BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright © 1997, Power Innovations

Limited

PRODUCT I NFORMATION