Scribd
Upload
23 views7 pages

Physics Practice Sheet P-2-Ch.18

Uploaded by

talhasep1704
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
23 views7 pages

Physics Practice Sheet P-2-Ch.18

Uploaded by

talhasep1704
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 7

PHYSICS

F.Sc / ICS – 2nd Year


Practice Sheet Chapter 18
MCQs
1. At room temperature, potential difference develops across the depletion region in case of silicon:
(a) 0.3 V (b) 0.7 V (c) 0.8 V (d) 0.9 V

2. Width of depletion region is:


(a) 108 m (b) 107 m (c) 106 m (d) 104 m

3. Reverse biased pn junction offer resistance of the order of:


(a) Few ohm (b) Several mega ohm (c) 4 ohm (d) All

4. Device used for conversion of A.C to D.C is:


(a) Oscillator (b) Rectifier (c) Amplifier (d) None

5. P-n junction when reversed biased acts as a:


(a) Capacitor (b) On switch (c) 0 ff switch (d) None

6. Pulsating D.C can be made smooth by using a circuit known as:


(a) Filter (b) Tank (c) Accepter (d) All

7. LED works when diode is:


(a) Forward biased (b) Reverse biased (c) Both a ,b (d) None

8. A photo diode can switch its current on or off in:


(a) Nano second (b) Mili second (c) Microsecond (d) Centi second

9. The reverse current in pn junction flows due to:


(a) Holes (b) Electrons
(c) Majority carriers (d) Minority carriers

10. In photovoltaic cell current is ______ proportional to intensity of light:


(a) Directly (b) Diversely (c) Both a, b (d) None

11. Transistor is a ________ terminal device:


(a) 2 (b) 3 (c) 4 (d) 5

12. For normal operation of a transistor, collector base junction should be:
(a) Forward biased (b) Reverse biased (c) Both a, b (d) None

13. In case of common emitter amplifier, phase difference between input and output:
(a) 0 (b) 120 (c) 180 (d) 90

14. When transistor acts as on switch then resistance between collector and emitter is:
(a) Small (b) Greater (c) Unchanged (d) None

15. Electronic circuits which implement various logic operation are called:
(a) Logic gates (b) Boolean algebra (c) Amplifier gain (d) None

16. Boolean algebra is based upon:


(a) AND operation (b) OR operation (c) NOT operation (d) All

17. Which one is not fundamental logic gate:


(a) AND (b) OR (c) NOT (d) NOR

18. The photovoltaic cell is always:


(a) Forward biased (b) Reverse biased (c) No biasing is required (d) None

19. Under ideal conditions, the collector current is:


(a) Equal to base current (b) Nearly equal to emitter current
(c) Less than base current (d) Always zero

20. When transistor acts as off switch then voltage across collector and emitter is:
(a) Less than (b) Greater than (c) Equal to (d) None
21. During day time, when light is falling upon LDR, RL is:
(a) Large (b) Unchanged (c) Small (d) None

22. If a full rectifier circuit is operating from 50Hz mains, the fundamental frequency in ripple will be:
(a) 25Hz (b) 50Hz (c) 70Hz (d) 100Hz

23. Which logic gate is represented by following combination of logic gates:

(a) OR (b) NAND (c) AND (d) NOR

24. In figure, current through the resistor is:

(a) 5A (b) 2A (c) 1A (d) 0A

25. Following diagram performs the logic function of:

(a) AND gate (b) NAND gate (c) OR gate (d) XOR gate

26. In depletion region, there are:


(a) Only holes (b) Only electrons
(c) Both holes and electrons (d) Neither holes nor electrons

27. The ratio of potential barrier for Ge to Si at room temperature:


(a) 3/7 (b) 7/3 (c) 2/5 (d) 1/3

28. On increasing the reverse voltage in a PN junction diode. The value of reverse current will:
(a) Increase (b) Gradually decrease (c) Remains constant (d) All

29. The ratio of resistance of a diode when connected forward biased and then reverse biased condition is:
(a) <1 (b) 0 (c) >1 (d) 

30. Digital circuits can be made by respective use of:


(a) AND gate (b) OR gate (c) NOT gate (d) NAND gate

SHORT QUESTIONS
1. How a depletion region is formed?

2. What is biasing requirements of a transistor.

3. Explain NAND gate.

4. Explain exclusive OR gate.

5. How does the motion of an electron in a n-type substance differ from the motion of holes in a p-type
substance?

6. What is the net charge on a n-type or a p-type substance?


7. Why charge carries are not present in the depletion region?

8. What is the effect of forward and reverse biasing of a diode on the width of depletion region?

9. Why ordinary silicon diodes do not emit light?

10. Why a photo diode is operated in reverse biased state?

11. Why is the base current in transistor very small?

12. What is virtual ground principle?

13. How width of unbiased PN junction is increased?


14. Explain transistor as ON switch.

15. Explain OP-AMP as a comparator.

LONG QUESTIONS
Q.1
(a) What is rectification. Explain full wave rectification.
(b) The current flowing into the base of a transistor is 100 μF. Find its collector current Ic, its emitter
current IE and the ratio IC / IE, if the value of current gain β is 100.

You might also like