Tut 2
Tut 2
TUTORIAL 2
Topic covered: The pn Junction
1. Consider a silicon pn junction. The n-region is doped to a value of Nd
=1016 cm−3. The built-in potential barrier is to be Vbi = 0.712 V.
Determine the required p-type doping concentration.
[Ans: 1.76×1016 cm−3]