NMOS and T-model: 𝑔𝑚 1 rb cµ

B+
𝐴𝑣 ≅ 𝑖𝑓 𝑅𝑠 ≫
𝑔𝑚 + 𝑔𝑚𝑏 𝑔𝑚 + 𝑔𝑚𝑏 B
+
C
D
+ VGD
-
ID vbe rπ cπ gmvbe ro
ig=0
gmvgs Ro
IG + -
VDS G ro + E
+ +
-
+ vgs 1 vi + AVovi RL vout Transition Frequency:
VGS gm -
-
- - -
𝑔𝑚
S 𝑓𝑇 =
𝑅𝐿
2𝜋(𝑐𝜋 +𝑐µ )
Characteristics in Active Region : 𝑉𝑜𝑢𝑡 = 𝐴𝑉 𝑉𝑖 = 𝐴𝑉𝑜 𝑉𝑖
𝑅𝐿 +𝑅𝑜 BJT Resistances as seen from pins:
1 𝑊 𝑉𝐷𝑆
𝐼𝐷 = µ𝑛 𝑐𝑜𝑥 (𝑉𝐺𝑆 − 𝑉𝑡 )2 (1 + ) 𝑅𝐿
2 𝐿 𝑉𝐴 𝐴𝑉 = 𝐴𝑉𝑜
𝑅𝐿 + 𝑅𝑜 RC
𝑉𝐴 𝑉𝐴′ 𝐿
𝐼𝐺 = 0, 𝑅𝑖𝑛 = ∞, 𝑟𝑜 = = CS with Source Resistance:
𝐼𝐷 𝐼𝐷 R1
𝑔𝑚 RB
𝑉𝐺𝑆 − 𝑉𝑡 = 𝑉𝑂𝑉 , 𝑉𝐷𝑆 ≥ 𝑉𝑂𝑉 , 𝐺𝑚 =
1 + (𝑔𝑚 + 𝑔𝑚𝑏 )𝑅𝑠
2𝐼𝐷 𝑊
𝑔𝑚 = = µ𝑛 𝑐𝑜𝑥 (𝑉𝐺𝑆 − 𝑉𝑡 ) 𝑖𝑜 = 𝐺𝑚 𝑣𝑖 = 𝐺𝑚 𝑣𝑔
𝑉𝑜𝑣 𝐿 R3 R2
CG: 𝐴𝑉𝑜 = 1 + (𝑔𝑚 + 𝑔𝑚𝑏 )𝑟𝑜
𝑔𝑚 = √2𝐼𝐷 µ𝑛 𝑐𝑜𝑥 𝑊/𝐿
RE
𝜀𝑜𝑥 CB: 𝐴𝑉𝑜 = 1 + 𝑔𝑚 𝑟𝑜
𝑐𝑜𝑥 = , 𝜀𝑜𝑥 = 3.9 × 𝜀0 ,
𝑡𝑜𝑥 MOS Resistances as seen from pins:
𝑅1 = 𝑟𝑜 + (1 + 𝑔𝑚 ′𝑟𝑜 )(𝑅𝐸 //(𝑟𝜋 + 𝑅𝐵 ))
𝜀0 = 8.854 × 10−12 𝐹/𝑚
′
1
High Frequency Model:
RD 𝑔𝑚 =
1 𝑅
+ 𝐵
cgd 𝑔𝑚 𝛽
R1
G
+
(𝑟𝑜 + 𝑅𝐶 )(𝑟𝜋 + 𝑅𝐵 )
D 𝑅2 =
vgs cgs gmvgs ro (𝛽 + 1)𝑟𝑜 + 𝑟𝜋 + 𝑅𝐵 + 𝑅𝐶
-
S
(𝑟𝑜 + 𝑅𝐶 )(𝑟𝜋 + 𝑅𝐵 )
R2 𝑅2 ≅
(𝛽 + 1)𝑟𝑜
In tr i n s ic G a i n a n d T r a n s i ti o n F r e qu e n c y :
RS (𝑟𝜋 + 𝑅𝐵 )
2𝑉𝐴 𝑔𝑚 𝑅2 = 𝑤ℎ𝑒𝑛 𝑟𝑜 = ∞
𝐴0 = , 𝑓𝑇 = (𝛽 + 1)
𝑉𝑜𝑣 2𝜋(𝑐𝑔𝑠 +𝑐𝑔𝑑 )
𝑅1 = 𝑟𝑜 + [1 + (𝑔𝑚 + 𝑔𝑚𝑏 )𝑟𝑜 ]𝑅𝑠 𝑅𝐶
Body Effect in MOSFETS: 𝐼𝑓 𝑅𝐵 = 0 → 𝑅2 ≅ 𝑟𝑒 +
𝑟𝑜 + 𝑅𝐷 𝑔𝑚 𝑟𝑜
G D 𝑅2 =
+ 1 + (𝑔𝑚 + 𝑔𝑚𝑏 )𝑟𝑜 𝑟𝜋 + 𝑅𝐵
vgs gmvgs gmbvbs ro 𝐼𝑓 𝑅𝐶 = 0 → 𝑅2 ≅
1 𝑅𝐷 𝛽+1
- 𝑅2 ≅ +
S 𝑔𝑚 + 𝑔𝑚𝑏 1 + (𝑔𝑚 + 𝑔𝑚𝑏 )𝑟𝑜 𝑅𝑐
𝑟𝑜 +
𝑔𝑚𝑏 (𝛽 + 1)
= 𝝌 = 𝑓(𝑉𝑠𝑏 ) 𝑅3 = (𝛽 + 1) (𝑟𝑒 + 𝑅𝐸 )
𝑔𝑚 NPN, Hybrid-П and T Model : 𝑟𝑜 + 𝑅𝐶 + 𝑅𝐸
C
𝑢𝑠𝑢𝑎𝑙𝑙𝑦 0.1 < 𝝌 < 0.3 𝑟𝑜 𝑅𝐸
gmvbe 𝑅3 ≅ 𝑟𝜋 + (𝛽 + 1)
+ VBC
-
𝐼𝑓 𝑉𝑠𝑏 = 0 → 𝑔𝑚𝑏 = 0 IC ib =βie 𝑟𝑜 + 𝑅𝐶 + 𝑅𝐸
IB +
B ro
CD (Source Follower): VCE + 𝑅3 ≅ 𝑟𝜋 + (𝛽 + 1)𝑅𝐸 𝑤ℎ𝑒𝑛 𝑟𝑜 = ∞
-
vbe ie α
re= g
VDD +
VBE m Emitter degeneration :
- -
E 𝑔𝑚
𝑔𝑚,𝑒𝑓𝑓 =
vi
B
+
C 1 + 𝑔𝑚 𝑅𝐸
Rout vbe rπ gmvbe ro 𝐺𝑎𝑖𝑛 = −𝑔𝑚,𝑒𝑓𝑓 𝑅𝑜𝑢𝑡
RO -
vo E B C
+

RS Forward Active Region: vbe rπ gmvbe ro

-
𝑣𝐶𝐸 E
𝑖𝐶 = 𝐼𝑆 𝑒 𝑣𝐵𝐸/𝑉𝑇 (1 + ), 𝑖𝐵 = 𝑖𝐶 /𝛽
𝑉𝐴 Vsig RE RE
1
𝑅𝑜 = , 𝑅𝑜𝑢𝑡 = 𝑅𝑜 //𝑅𝑆 𝐼𝐶 𝑉𝐴 𝑉𝐴
𝑔𝑚 + 𝑔𝑚𝑏 𝑔𝑚 = , 𝑟𝑜 = , 𝐴0 = B C
𝑔𝑚 𝑟𝑜 𝑔𝑚 𝑉𝑇 𝐼𝐶 𝑉𝑇 +

𝐴𝑣𝑜 = ≅ vb Rin gm,eff vb Rout

1 + (𝑔𝑚 + 𝑔𝑚𝑏 )𝑟𝑜 𝑔𝑚 + 𝑔𝑚𝑏 𝛽 -
𝑅𝑖𝑛 𝑤𝑖𝑡ℎ 𝑒𝑚𝑖𝑡𝑡𝑒𝑟 𝑔𝑟𝑜𝑢𝑛𝑑𝑒𝑑 𝑟𝜋 =
𝑅𝑠 𝑔𝑚 𝑅𝑠 𝑔𝑚
𝐴𝑣 = 𝐴𝑣𝑜 ≅
𝑅𝑜 +𝑅𝑠 1 + (𝑔𝑚 + 𝑔𝑚𝑏 )𝑅𝑠 High Frequency Model:
Wilson Current Mirror:
 𝛽𝑟𝑜 𝑉𝑠𝑖𝑔 𝑟𝜋
𝑅𝑜 = (𝐵𝐽𝑇) 𝑉𝑠𝑖𝑔 ′ =
2 OCTC method: 𝑟𝜋 + 𝑟𝑥 +𝑅𝑠𝑖𝑔
𝑅𝑜 ≅ 𝑔𝑚3 𝑟𝑜3 𝑟𝑜2 (𝑀𝑂𝑆) 𝑅𝑠𝑖𝑔 ′ = 𝑟𝜋 //(𝑟𝑥 +𝑅𝑠𝑖𝑔 )
1
Widlar Current Mirror: 𝜏𝐻 = ∑ 𝑅𝑖 𝐶𝑖 → 𝑓𝐻 ≅
2𝜋𝜏𝐻 CS with source resistance:
𝐼𝑟𝑒𝑓 For CS: 𝑔𝑚
𝐼𝑜 𝑅𝐸 = 𝑉𝑇 𝑙𝑛 𝐺𝑚 ≅ & 𝑅𝑠 ≅ 𝑟𝑜 (1 + 𝑔𝑚 𝑅𝑠 )
𝐼𝑜 1 + 𝑔𝑚 𝑅𝑠
𝜏𝐻 = 𝑅𝑔𝑠 𝐶𝑔𝑠 + 𝑅𝑔𝑑 𝐶𝑔𝑑 + 𝑅𝐿 𝐶𝐿
Differential Amplifier CM Gain: 𝑅𝐿 ′ = 𝑅𝐿 //𝑟𝑜
ix
-Resistive load, differential output: 𝑅𝑔𝑑 = 𝑅𝐿 ′ + 𝐺𝑚 𝑅𝑠𝑖𝑔 𝑅𝐿 ′ + 𝑅𝑠𝑖𝑔
−𝑅𝐷 𝛥𝑅𝐷
𝑀𝑂𝑆: 𝐴𝑐𝑚 = ( ) + 𝑅𝑠 + 𝑅𝑠𝑖𝑔
2𝑅𝑆𝑆 𝑅𝐷 vi vx g mv i R2 𝑅𝑔𝑠 ≅ 𝑟𝑜
R1 1 + 𝑔𝑚 𝑅𝑠 ( )
−𝑅𝐷 𝛥𝑔𝑚 - 𝑟𝑜 + 𝑅𝐿
𝑜𝑟 𝐴𝑐𝑚 = ( )
2𝑅𝑆𝑆 𝑔𝑚 𝜏𝐻 = 𝑅𝑔𝑠 𝐶𝑔𝑠 + 𝑅𝑔𝑑 𝐶𝑔𝑑 + 𝑅𝐿 ′𝐶𝐿
−𝑅𝐶 𝛥𝑅𝐶 Diff. Amp.
𝐵𝐽𝑇: 𝐴𝑐𝑚 = ( ) 𝑣𝑥
2𝑅𝐸𝐸 𝑅𝐶 = 𝑅1 + 𝑔𝑚 𝑅1 𝑅2 + 𝑅2
𝑖𝑥
Resistively loaded:
-Active load (Q3 diode connected, Q4
Miller Method: 1 + 𝑠𝑅𝑆𝑆 𝐶𝑆𝑆
load transistor): 𝐴𝑐𝑚 (𝑠) = 𝐴𝑐𝑚 (0)
v1 cx 𝑠
v2 (1 + ) (… )
−1 𝜔𝑝,1
𝑀𝑂𝑆: 𝐴𝑐𝑚 =
2𝑔𝑚3 𝑅𝑆𝑆 Active Loaded:
−𝑟𝑜4 c1 c2
𝐵𝐽𝑇: 𝐴𝑐𝑚 = 𝑠𝑐𝑚
𝛽3 𝑅𝐸𝐸 𝑔𝑚 𝑅𝑜 (1 + )
2𝑔𝑚3
𝐴𝑑 =
𝑠𝑐
Diff. Amp. Input Offset Voltage: (1 + 𝑠𝑐𝐿 𝑅𝑜 ) (1 + 𝑚 )
𝑔𝑚3
↓
𝑉𝑜𝑣 𝛥𝑅𝐷 2 𝑉𝑜𝑣 𝛥(𝑊 ⁄𝐿)
2
𝑔𝑚 𝑅𝑜 𝑔𝑚3
𝑉𝑜𝑠 = √( ) +( ) + (𝛥𝑉𝑡 )2 v1 v2 𝐴𝑑 ≅ 𝑓𝑜𝑟 𝜔 ≪
2 𝑅𝐷 2 𝑊 ⁄𝐿 1 + 𝑠𝑐𝐿 𝑅𝑜 𝑐𝑚
(𝑀𝑂𝑆) c1 (1-V2/V1)cx c2 (1-V1/V2)cx Low Frequency Response:
𝛥𝑅𝐶 2 𝛥𝐼𝑆 2
𝑉𝑜𝑠 = 𝑉𝑇 √( ) + ( ) (𝐵𝐽𝑇) 1
𝑅𝐶 𝐼𝑆
𝜔𝑝,1 =
𝑅𝑖 𝐶𝑖

Diff. Amp. Input Offset Current: BJT high freq model can be simplified to (Ci’s are bypass/coupling capacitances)
𝛥𝛽 look like MOS high freq model: MOS:
𝐼𝑜𝑠 = 𝐼𝐵 ( )
𝛽 𝜔𝐿 = max(𝜔𝑝,𝑖 )
Rsig rx cµ
High Frequency Response: Usually bypass capacitance pole is 10
𝑠 times larger than others
∏ (1 + ) rπ cπ
𝑤𝑧,𝑖 Vsig
𝑊ℎ𝑒𝑛 𝜔𝐻 (𝑠) = 𝑖𝑠 𝑘𝑛𝑜𝑤𝑛
∏ (1 +
𝑠 BJT:
)
𝑤𝑝,𝑗
𝜔𝐿 = 𝜔𝑝,1 + 𝜔𝑝,2 + 𝜔𝑝,3
𝐼𝑓 𝜔𝑝,1 ≪ 𝜔𝑝,𝑗 & 𝜔𝑝,1 ≪ 𝜔𝑧,𝑖 ↓
𝑒𝑥: 𝜔𝑝,3 = 0.8𝜔𝐿 & 𝜔𝑝,1 = 𝜔𝑝,2 = 0.1𝜔𝐿
𝜔𝑝,1 𝑖𝑠 𝑡ℎ𝑒 𝑑𝑜𝑚𝑖𝑛𝑎𝑛𝑡 𝑝𝑜𝑙𝑒 𝑎𝑛𝑑 𝜔𝐻 = 𝜔𝑝,1 Rsig’ cµ
Two port parameters:
1 1 1
𝑒𝑙𝑠𝑒 =∑ −2∑ 𝑉 𝐼
𝜔𝐻 2 𝜔𝑝,𝑗 𝜔𝑧,𝑖 2 [ 1] = 𝑍 [ 1]
2
cπ 𝑌 = 𝑍 −1
Vsig’ 𝑉2 𝐼2
𝑉 𝐼
[ 1] = 𝐻 [ 1 ] 𝐺 = 𝐻 −1
𝐼2 𝑉2

Transfer Function of a Two Stage Amplifier

𝑉𝑜 𝐺𝑚1 (𝐺𝑚2 − 𝑠𝐶𝑐 )𝑅1 𝑅2
=
𝑉𝑖𝑑 1 + 𝑠[𝐶1 𝑅1 + 𝐶2 𝑅2 + 𝐶𝑐 (𝐺𝑚2 𝑅1 𝑅2 + 𝑅1 + 𝑅2 )] + 𝑠 2 [𝐶1 𝐶2 + 𝐶𝑐 (𝐶1 + 𝐶2 )]𝑅1 𝑅2

Approximated Locations of Poles when a Dominant Pole Exists

1 𝐺𝑚2 𝐶𝑓
𝜔′𝑃1 ≅ 𝜔′𝑃2 ≅
𝐺𝑚2 𝑅2 𝐶𝑓 𝑅1 𝐶1 𝐶2 +𝐶𝑓 (𝐶1 +𝐶2 )