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DPP - Daily Practice Problems
Name : Date :
Start Time : End Time :
SYLLABUS : SEMICONDUCTOR ELECTRONICS - 1 (Semiconductors, LED, Photodiode, Zener diode)
57
Max. Marks : 120 Time : 60 min.
GENERAL INSTRUCTIONS
• The Daily Practice Problem Sheet contains 30 MCQ's. For each question only one option is correct. Darken the correct
circle/ bubble in the Response Grid provided on each page.
• You have to evaluate your Response Grids yourself with the help of solution booklet.
• Each correct answer will get you 4 marks and 1 mark shall be deduced for each incorrect answer. No mark will be given/
deducted if no bubble is filled. Keep a timer in front of you and stop immediately at the end of 60 min.
• The sheet follows a particular syllabus. Do not attempt the sheet before you have completed your preparation for that
syllabus. Refer syllabus sheet in the starting of the book for the syllabus of all the DPP sheets.
• After completing the sheet check your answers with the solution booklet and complete the Result Grid. Finally spend time
to analyse your performance and revise the areas which emerge out as weak in your evaluation.
DIRECTIONS (Q.1-Q.21) : There are 21 multiple choice Q.4 Let nh and ne be the number of holes and conduction
questions. Each question has 4 choices (a), (b), (c) and (d), out electrons respectively in a semiconductor. Then
of which ONLY ONE choice is correct. (a) nh > nein an intrinsic semiconductor
Q.1 When a semiconductor is heated, its resistance (b) nh = nein an extrinsic semiconductor
(a) decreases (b) increases (c) nh = ne in an intrinsic semiconductor
(c) reamins unchanged (d) nothing is definite (d) ne > nh in an intrinsic semiconductor
Q.2 The energy band gap of Si is Q.5 Which statement is correct?
(a) 0.70 eV (a) N-type germanium is negatively charged and P-type
(b) 1.1 eV
germanium is positively charged
(c) between 0.70 eV to 1.1eV
(d) 5 eV (b) Both N-type and P-type germanium are neutral
Q.3 The forbidden energy ban d gap in conductors, (c) N-type germanium is positively charged and P-type
semiconductors and insulators are EG1, EG2 and EG3 germanium is negatively charged
respectively. The relation among them is (d) Both N-type and P-type germanium are negatively
(a) EG1 = EG2 = EG3 (b) EG1 < EG2 < EG3 charged
(c) EG1 > EG2 > EG3 (d) EG1 < EG2 > EG3
RESPONSE GRID 1. 2. 3. 4. 5.
Space for Rough Work
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Q.6 Wires P and Q have the same resistance at ordinary (room) Q.12 The energy gap for diamond is nearly
temperature. When heated, resistance of P increases and (a) 1 ev (b) 2 ev (c) 4 ev (d) 6 ev
that of Q decreases. We conclude that Q.13 The valence band and conduction band of a solid overlap at
(a) P and Q are conductors of different materials low temperature, the solid may be
(b) P is n-type semiconductor and Q is p-type (a) metal (b) semiconductor
semiconductor (c) insulator (d) None of these
(c) P is semiconductor and Q is conductor Q.14 Choose the correct statement
(a) When we heat a semiconductor its resistance
(d) P is conductor and Q is semiconductor
increases
Q.7 In extrinsic P and N-type, semiconductor materials, the (b) When we heat a semiconductor its resistance
ratio of the impurity atoms to the pure semiconductor decreases
atoms is about (c) When we cool a semiconductor to 0 K then it becomes
(a) 1 (b) 10–1 (c) 10–4 (d) 10–7 super conductor
Q.8 At zero Kelvin a piece of germanium (d) Resistance of a semiconductor is independent of
(a) becomes semiconductor temperature
(b) becomes good conductor Q.15 If ne and vd be the number of electrons and drift velocity
(c) becomes bad conductor in a semiconductor. When the temperature is increased
(d) has maximum conductivity (a) ne increases and vd decreases
Q.9 Electronic configuration of germanium is 2, 8, 18 and 4, (b) ne decreases and vd increases
To make it extrinsic semiconductor small quantity of (c) Both ne and vd increases
antimony is added (d) Both ne and vd decreases
(a) The material obtained will be N-type germanium in Q.16 The reverse biasing in a PN junction diode
which electrons and holes are equal in number (a) decreases the potential barrier
(b) The material obtained will be P-type germanium (b) increases the potential barrier
(c) The material obtanied will be N-type germanium (c) increases the number of minority charge carriers
which has more electrons than holes at room (d) increases the number of majority charge carriers
temperature Q.17 Two PN-junctions can be connected in series by three
(d) The material obtained will be N-type germanium different methods as shown in the figure. If the potential
which h as less electrons than holes at room difference in the junctions is the same, then the correct
temperature connections will be
Q.10 The intrinsic semiconductor becomes an insulator at P N N P P N P N N P N P
(a) 0°C (b) –100°C
(c) 300 K (d) 0 K
Q.11 Energy bands in solids are a consequence of + – + – + –
(a) Ohm’s Law 1 2 3
(b) Pauli’s exclusion principle (a) In the circuit (1) and (2)
(c) Bohr’s theory (b) In the circuit (2) and (3)
(c) In the circuit (1) and (3)
(d) Heisenberg’s uncertainty principle
(d) Only in the circuit (1)
6. 7. 8. 9. 10.
RESPONSE
11. 12. 13. 14. 15.
GRID
16. 17.
Space for Rough Work
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Q.18 The approximate ratio of resistances in the forward and Q.22 In the given figure, which of the diodes are forward biased?
reverse bias of the PN-junction diode is +10V
(a) 102 : 1 (b) 10–2 : 1 (1) (2) –12V
–4 R
(c) 1 : 10 (d) 1 : 104
Q.19 The dominant mechanisms for motion of charge carriers
in forward and reverse biased silicon P-N junctions are +5V R –5V
(a) Drift in forward bias, diffusion in reverse bias R
(b) Diffusion in forward bias, drift in reverse bias (3) (4) –10V
R
(c) Diffusion in both forward and reverse bias
(d) Drift in both forward and reverse bias
Q.20 In a triclinic crystal system –10V
(a) a ¹ b ¹ c, a ¹ b ¹ g Q.23 Which of the following materials are crystalline?
(b) a = b = c, a ¹ b ¹ g (1) Copper (2) Sodium chloride
(c) a ¹ b ¹ c, a ¹ b = g (3) Diamond (4) Wood
(d) a = b = c, a = b = g Q.24 A piece of copper and the other of germanium are cooled
from the room temperature to 80 K, then which of the
Q.21 The correct cymbol for zener diode is
following would be wrong statements?
(1) Resistance of each increases
(a)
(2) Resistance of each decreases
(3) Resistance of copper increases while that of
+ – germanium decreases
(b)
(4) Resistan ce of copper decreases while that of
+ – germanium increases
(c)
DIRECTIONS (Q.25-Q.27) : Read the passage given below
and answer the questions that follows :
+ – A student performs an experiment for drawing the static
(d)
characteristic curve of a triode valve in the laboratory. The
following data were obtained from the linear portion of the
DIRECTIONS (Q.22-Q.24) : In the following questions, curves:
more than one of the answers given are correct. Select the Grid voltage Vg (volt) –2.0 –3.5 –2.0
correct answers and mark it according to the following
Plate voltage Vp (volt) 180 180 120
codes:
Plate current IP (mA) 15 7 10
Codes :
Q.25 Calculate the plate resistance rp of the triode valve?
(a) 1, 2 and 3 are correct (b) 1 and 2 are correct
(a) 0.12 × 104 ohm (b) 1.2 × 10 4 ohm
(c) 2 and 4 are correct (d) 1 and 3 are correct 4
(c) 1.3 × 10 ohm (d) 1.4 × 10 4 ohm
RESPONSE 18. 19. 20. 21. 22.
GRID 23. 24. 25.
Space for Rough Work
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Q.26 Calculate the mutual conductance gm of the triode valve? (c) Statement -1 is False, Statement-2 is True.
(a) 5.33 × 10–3 ohm–1 (b) 53.3 × 10–3 ohm–1 (d) Statement -1 is True, Statement-2 is False.
–3
(c) 4.32 × 10 ohm –1 (d) 5.00 × 10–3 ohm–1 Q.28 Statement-1 : The number of electrons in a P-type silicon
Q.27 Calculate the amplification factor µ, of the triode valve? semiconductor is less than the number of electrons in a
(a) 64 (b) 52 pure silicon semiconductor at room temperature.
(c) 54 (d) 62 Statement-2: It is due to law of mass action.
Q.29 Statement-1 : The resistivity of a semiconductor decreases
DIRECTIONS (Q. 28-Q.30) : Each of these questions contains
with temperature.
two statements: Statement-1 (Assertion) and Statement-2
(Reason). Each of these questions has four alternative choices, Statement-2 : The atoms of a semiconductor vibrate with
only one of which is the correct answer. You have to select the larger amplitude at higher temperature there by increasing
correct choice. its resistivity.
(a) Statement-1 is True, Statement-2 is True; Statement-2 is a Q.30 Statement-1 : We can measure the potential barrier of a
correct explanation for Statement-1. PN junction by putting a sensitive voltmeter across its
terminals.
(b) Statement-1 is True, Statement-2 is True; Statement-2 is
NOT a correct explanation for Statement-1. Statement-2 : The current through the PN junction is not
same in forward and reversed bias.
RESPONSE GRID 26. 27. 28. 29. 30.
DAILY PRA CTICE PROBLEM SHEET 57 - PHYSICS
Total Questions 30 Total Marks 120
Attempted Correct
Incorrect N et Score
Cut-off Score 28 Qualifying Score 48
Success Gap = Net Score – Qualifying Score
Net Score = (Correct × 4) – (Incorrect × 1)
Space for Rough Work
