BLDEA's

V P Dr. P. G. Halakatti College of Engineering and Technology,

Vijayapur
Approved by AICTE New Delhi, Recognized by Govt. of Karnataka and Affiliated to VTU Belagavi

LABORATORY MANUAL

Semester: III

Course: Analog Electronic Circuits

Course Code: BEE303

Department of Electrical & Electronics Engineering

 B.L.D.E.Association’s
V P Dr. P. G. Halakatti College of Engineering & Technology, Vijayapura
Department of Electrical and Electronics Engineering
Programme: B.E. in Electrical and Electronics Engineering

INSTITUTE VISION AND MISSION

VISION
To emerge as a Widely Acknowledged Centre in Technical Education and Research to cater
the need of Society with a Futuristic outlook.

MISSION
1. To Enrich Students with the essence of science and engineering knowledge, Professional
ethics and social values.
2. To instill creativity and Research Temperament to Reach the Greater Heights of
Professional Success.

DEPARTMENT VISION AND MISSION

VISION
To develop the electrical & electronics engineering as a widely acknowledge center in
academics and research to meet ever changing needs of the country, industry and society.

MISSION
M1: To develop all round personality of the students to meet the demands of emerging
technologies in the field of electrical and excel professionally through quality technical
education.
M2: To develop creativity and research temperament to reach the greater heights of professional
ethics and social responsibility.
 B.L.D.E.Association’s
V P Dr. P. G. Halakatti College of Engineering & Technology, Vijayapura
Department of Electrical and Electronics Engineering
Programme: B.E. in Electrical and Electronics Engineering

Program Educational Objectives (PEOs)

PEO1: Graduates will be able to address the real time Electrical Engineering Problems like
power generation, uninterrupted power supply and be able to formulate solutions using new
technologies that are economically feasible and with available renewable sources.

PEO2: Graduates will be able to exhibit ethical attitude, effective communication skills,
leadership qualities and team spirit for a successful professional career that support the service
for development of the society.

PEO3: Graduates will be able to pursue advance education and research, achieve technical
expertise and other creative activities in multidisciplinary engineering fields.

PEO4: Graduates will be able to apply basic and contemporary science and experimental skills
to identify electrical engineering problems and develop practical skills to produce engineering
designs for electrical, electronic equipment’s with cost effectiveness, safety and durability.

Program Specific Outcomes (PSOs)

PSO1: Demonstrate the knowledge and competence in the application of control system, circuit
analysis, power electronics, analog & digital electronics and microcontroller in testing,
protection and operation of power systems, electrical machines and electronic systems.

PSO2: Explore the methodologies and new technologies in renewable energy engineering and
use them to solve current and future energy problems globally for economic and efficient
conservation of energy.

PSO3: Use hardware and software skills for design, simulation and analysis of electrical and
electronics systems.
 B.L.D.E.Association’s
V P Dr. P. G. Halakatti College of Engineering & Technology, Vijayapura
Department of Electrical and Electronics Engineering
Programme: B.E. in Electrical and Electronics Engineering

Program Outcomes (POs)

PO1: Engineering knowledge: Apply the knowledge of mathematics, science, engineering
fundamentals, and an engineering specialization to the solution of complex engineering
problems.
PO2: Problem analysis: Identify, formulate, review research literature, and analyze complex
engineering problems reaching substantiated conclusions using first principles of mathematics,
natural science, and engineering sciences
PO3: Design/development of solutions: Design solutions for complex engineering problems
and design system components or processes that meet the specified needs with appropriate
consideration for the public health and safety, cultural, societal and environmental
considerations.
PO4: Conduct investigations of complex problems: Use of research-based knowledge and
research methods including design of experiments, analysis and interpretation of data, and
synthesis of the information to provide valid conclusions
PO5: Modern tool usage: Create, select, and apply appropriate techniques, resources, and
modern engineering and IT tools including prediction and modeling to complex engineering
activities with an understanding of the limitations
PO6: The engineer and society: Apply reasoning informed by the contextual knowledge to
assess societal, health, safety, legal and cultural issues and the consequent responsibilities
relevant to the professional engineering practice.
PO7: Environment and sustainability: Understand the impact of the professional engineering
solutions in societal and environmental contexts, and demonstrate the knowledge of and need
for sustainable development.
PO8: Ethics: Apply ethical principles and commit to professional ethics and responsibilities
and norms of the engineering practice.
PO9: Individual and team work: Function effectively as an individual, and as a member or
leader in diverse teams and in multidisciplinary settings.
PO10: Communication: Communicate effectively on complex engineering activities with the
engineering community and with society at large, such as, being able to comprehend and write
effective reports and design documentation, make effective presentations and to give and
receive clear instructions.
PO11: Project management and finance: Demonstrate knowledge and understanding of the
engineering and management principles and apply these to one’s own work, as a member and
leader in a team, to manage projects and in multidisciplinary environments.
PO12: Life-long learning: Recognize the need for, and have the preparation and ability to
engage in independent and life-long learning in the broadest context of technological change.
 Analog Electronic Circuits Laboratory Manual [BEE303]

Overview
Year / Semester 2nd Year /3rd Semester Academic Year 2023-24
Analog Electronic Circuits
Laboratory Title Laboratory Code BEE303

Total Contact Hours 8-10 Lab slots

Duration of CIE 2 Hours
CIE Marks 25 Marks
Sign -
Dr. V. S. Gonal
Lab Manual Author Date September 2023
Prof. Vinay Kolur
Sign -
Checked By Date October 2023

Description
Course Objectives
• Provide the knowledge for the analysis of diode and transistor circuits.
• Develop skills to design the electronic circuits using transistors and Op-amps.
• To understand the concept and various types of converters.
Course Outcomes
The student, after successful completion of the course, will be able to
• Obtain the output characteristics of clipper and clamper circuits.
• Design and compare biasing circuits for transistor amplifiers & explain the transistor switching.
• Explain the concept of feedback, its types and design of feedback circuits
• Design and analyse the power amplifier circuits and oscillators for different frequencies.
• Design and analysis of FET and MOSFET amplifiers.
• Demonstrate the application of Op-amps.
Prerequisites
• Basic knowledge of bread board connection methods.
• Details of various elements like pin configuration of different logic gates, color code of resistors etc.
• Analog Electronic Circuits design and analysis
Base Course
1. Analog Electronic Circuits.
2. Basic Electrical/Electronics Engineering.
Introduction
In Analog Electronic Circuits we are using Diodes, Transistors, Op-Amp IC’s for conducting
experiments such as Diode Clipper & Clampers, Static Transistor Characteristics, BJT RC Coupled Amplifier,
BJT RC Phase Shift Oscillator, BJT Darlington emitter follower, Precision Full Wave Rectifier, frequency
response of an op – amp amplifier under inverting and non - inverting configurations, op – amp RC phase
shift oscillator, Schmitt trigger circuit using an op – amp, op – amp as a voltage comparator circuit and zero
crossing detector., etc. At the end of the course student will be able to understand and design Transistor
circuits, Op-Amp circuits and get the performance practically.
Resources Required
1. Signal Generator
2. Regulated Power Supply
3. Digital Storage Oscilloscope
4. Bread Boards

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 Analog Electronic Circuits Laboratory Manual [BEE303]

General Instructions
1. After circuit connection, before switching ON the supply, verify it by instructor or lab in charge.
2. Make sure voltage level of power supply is at minimum value at the start.
3. Before leaving the lab keep all the equipment’s properly.

List of Experiments

Expt No. Title of the Experiment

1 Experiments on series, shunt and double ended clippers and clampers.
Design, simulation and Testing of Full wave – centre tapped transformer type and
2
Bridge type rectifier circuits with and without Capacitor filter. Determination of ripple
factor, regulation and efficiency.
Static Transistor characteristics for CE, CB and CC modes and determination of h
3
parameters.
Frequency response of single stage BJT and FET RC coupled amplifier and
4
determination of half power points, bandwidth, input and output impedances.
Design and testing of BJT -RC phase shift oscillator for given frequency of oscillation.
5
Design, simulation (MATLAB) and testing of Wien bridge oscillator for given
6
frequency of oscillation.
Design and testing of Hartley and Colpitt’s oscillator for given frequency of
7 oscillation.
Determination of gain, input and output impedance of BJT Darlington emitter follower
8
with and without bootstrapping.
Design and testing of Class A and Class B power amplifier and to determine
9
conversion efficiency.
Design and simulation of Full wave – centre tapped transformer type and Bridge type
10
rectifier circuits with and without Capacitor filter using MATLAB. Determination of
ripple factor, regulation and efficiency.

Evaluation Scheme
• 15 marks for the conduction of the experiment and preparation of laboratory record, and 10 marks
for the test to be conducted after the completion of all the laboratory sessions.
• On completion of every experiment/program in the laboratory, the students shall be evaluated
including viva-voce and marks shall be awarded on the same day.
• The CIE marks awarded in the case of the Practical component shall be based on the continuous
evaluation of the laboratory report. Each experiment report can be evaluated for 10 marks. Marks of
all experiments’ write-ups are added and scaled down to 15 marks.
• The laboratory test (duration 02/03 hours) after completion of all the experiments shall be
conducted for 50 marks and scaled down to 10 marks.
• Scaled-down marks of write-up evaluations and tests added will be CIE marks for the laboratory
component of IPCC for 25 marks.
• The student has to secure 40% of 25 marks to qualify in the CIE of the practical component of the IPCC

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 Analog Electronic Circuits Laboratory Manual [BEE303]

Experiment No: 1

CLIPPER & CLAMPER CIRCUITS

1.1 CLIPPER CIRCUITS

Aim: Conduct experiment to test diode clipping (single/double ended).

Apparatus Required:
S.No. Particulars Range Quantity
1 Switching diode – 1N4007 1(One) No.
2 Resistors 10K , 1K 1(One) No. Each
3 Bread board 1(One) No. 1(One) No.
4 Signal generator 1(One) No. 1(One) No.
5 Dual DC Regulated Power supply (0 – 30) V 1(One) No.
6 CRO -- 1(One) No.
7 Connecting wires (Single Strand) -- Few.
8 Multimeter -- 1(One) No.

Theory: Clippers are networks that employ diodes to clip away portions of an input signal
without distorting the remaining part of the applied waveform. These clipper circuits transfer a
selected portion of the input waveform to the output Diode clipping circuits are used to prevent
a wave form from exceeding some particular limit either negative or positive or both. This is
achieved by connecting the diode in serial or in parallel circuit. Variable DC voltage is
connected in the circuit to achieve required level of clipping. By using different level DC
voltages, it is possible to get different level of clipping in positive and negative side. These
clipper circuits are also called as limiters.

Following are few types of clipper circuits

1. Single ended (positive or negative ) and double ended clipping

2. Series or parallel based on the construction.
Peak detection is possible by connecting a suitable capacitor across the output of single ended
clipping circuit. The capacitor charging time to be fast and discharging time to be slow so that
capacitor holds the maximum value.

DESIGN:

Assume Forward Resistance of Diode, Rf =100 Ω;Reverse Resistance of Diode, Rr =1MΩ

The series resistance is calculated such that R = R f .Rr = 100106 = 10K
Note: If you are using 1N4001 Rf and Rr may be assumed to be 30 Ω and 300K Ω respectively and
R=3.3 K Ω
The series resistor is used to limit the current through the diode.

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 Analog Electronic Circuits Laboratory Manual [BEE303]

Figure 1: Positive shunt clipper

If the output to be clipped above 2 V, Vo (max) = +2 V

From the Fig.1 observe that when the diode is ON Vo (max) = V + Vref where V is Diode
Cut-in Voltage which is equal to 0.6 V for IN4007 (Silicon diode)
Hence Vref = Vo (max) – V
= 2 – 0.6 = 1.4 V
Make sure that the amplitude of the input sinusoidal signal is more than ±2Volts.
Figure 2: Negative shunt clipper

If the output to be clipped below − 2 Volts.

From the Fig.2 observe that when the diode is ON Vo (min) = −V−Vref = −2 V = −0.6 −Vref;
Vref= 2 − 0.6 = 1.4 V Vref = 1.4 V
Make sure that the amplitude of the input sinusoidal signal is more than ±2Volts.
Figure 3 : Positive series clipper

Figure 4: Negative series clipper

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Figure 5: Double ended clipper with independent voltage levels

If the clipping the signal is required below 2 Volt and above 4 Volt then the design is as
follows.
1. Vo max = 4 V,
Vo max = VR1 + V; VR1 = Vo max – V= 4 – 0.6; VR1 = 3.4 V
2. Vo min = 2 V
Vo min = VR2 – V; VR2 = Vo min + V = 2 + 0.6; VR2 = 2.6 V
Figure 6: Double ended clipper with symmetrical voltage levels

If we need to generate a symmetrical clipping circuit with clipping voltage V0 = ± 4 Volts,

Vo max = VR1 + V = 4 V; VR1 = 4 – 0.6 = 3.4 V
Vo min = −V − VR2= - 4 V, VR2 = 4 − 0.6 = 3.4 V

1.2 CLAMPER CIRCUITS

Aim: Conduct experiment to test diode clamping circuits (positive/negative).
Apparatus Required:
S.No. Particulars Range Quantity
1 Switching diode – 1N4007 1(One) No.
2 Resistors 100K , 1K 1(One) No. Each
3 Bread board 1(One) No. 1(One) No.
4 Signal generator 1(One) No. 1(One) No.
5 Dual DC Regulated Power supply (0 – 30) V 1(One) No.
6 Capacitor 1uF/10uF 1(One) No.
7 CRO -- 1(One) No.
8 Connecting wires (Single Strand) -- Few.
9 Multimeter -- 1(One) No.

Theory: Clamper is a circuit that "clamps" a signal to a different dc level without changing the
appearance of the applied signal The different types of clampers are positive negative and
biased clampers A clamping network must have a capacitor, a diode and a resistive element.
The magnitude R and C must be chosen such that the time constant RC is large enough to ensure
that the voltage across the capacitor does not discharge significantly during the interval the
diode is non- conducting. By connecting suitable DC voltage in series with the diode, the level
of swing can be varied.

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 Analog Electronic Circuits Laboratory Manual [BEE303]

Circuit Diagram

Positive peak clamper

Figure 1: Positive clamper.

Figure 2: Positive clamper negative peak clamped.

Design: Vo,max = Vdc + V ; V = 0.6V (Silicon diode), Vdc = Vo,max - V
To clamp the positive peak of a sine wave of 10 V (P – P) at +3V, we needVdc
= 3 – 0.6 = 2.4 V
Note: Changing this voltage changes the clamping level.
Let f = 1KHz.  T = 1msec. Let R = 10K (design procedure is same as that ofclipper)
For the circuit to perform satisfactorily RC = 10T
Therefore C = 10T / R = 10 x 1ms / 10KΩ; C = 1.0 µF

Figure 3: Positive clamper to clamp negative peak

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 Analog Electronic Circuits Laboratory Manual [BEE303]

Vo,max = Vdc – V; Assume we need to clamp the negative peak to -3V, ie., Vo,max= – 3V
Vdc = Vo,max + V,
Vdc = – 3 + 0.6 = – 2.4V (Note: Changing this voltage changes the clamping level.)The
design of R and C is as mentioned in earlier circuit

Procedure:-
1. Set up the circuit on the bread board.
2. Switch on the signal generator and set voltage 10V P-P and frequency 1 KHz.
3. Using CRO measure the output wave form and sees that it matches with requiredwave
form.
4. Repeat this for other clipper and clamper circuits.

Result: - All types of clipper and clamper circuits are tested and output wave form matches with
the expected waveform.

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 Analog Electronic Circuits Laboratory Manual [BEE303]

Experiment No: 3
Static Transistor characteristics for CE, CB and CC modes and determination of h parameters.

Aim: To study the input and output characteristics of a transistor in Common Emitter configuration.

Apparatus Required:

S.No. Particulars Range Quantity

1 Transistor BC 107 1(One) No.
2 Resistors 1K , 100K 1(One) No. Each
3 Bread board -- 1(One) No.
4 Dual DC Regulated Power supply (0 - 30 V) 1(One) No.
5 Digital Ammeters (0 - 200 mA, 0-200 1(One) No. Each
6 Digital Voltmeter (0 - 20V) 2(Two) No.
7 Connecting wires (Single Strand) -- Few.

Theory:
• Transistor CB (Common Base) configuration
It is transistor circuit in which base is kept common to the input and output circuits.
Characteristics:
• It has low input impedance (on the order of 50 to 500 Ohms).
• It has high output impedance (on the order of 1 to 10 Mega Ohms).
• Current gain (alpha) is less than unity.
• Transistor CE (Common Emitter) configuration
It is transistor circuit in which emitter is kept common to both input and output circuits.
Characteristics (applications):
• It has high input impedance (on the order of 500 to 5000 Ohms).
• It has low output impedance (on the order of 50 to 500 Kilo Ohms).
• Current gain (Beta) is 98.
• Power gain is upto 37dB.
• Output is 180 degree out of phase.
• Transistor CC (Common Collector) configuration
It is transistor circuit in which collector is kept common to both input and output circuits. It is also
called as emitter follower.
Characteristics:
• It has high input impedance (on the order of about 150 to 600 Kilo Ohms).
• It has low output impedance (on the order of about 100 to 1000 Ohms).

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• Current gain (Beta) is about 99.

• Voltage and power gain is equal to or less than one.

Circuit Diagram:

h – Parameter model of CE transistor:

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 Analog Electronic Circuits Laboratory Manual [BEE303]

Observations:

Input Characteristics
VBB (Volts) VCE = 0V VCE = 5V
VBE (Volts) IB (µA) VBE (Volts) IB (µA)

Output Characteristics
VCC (Volts) IB = 0 µA IB = 20 µA IB = 40 µA
VCE (Volts) IC (mA) VCE (Volts) IC (mA) VCE (Volts) IC (mA)

Graph:

Procedure:

Input Characteristics:

1. Connect the circuit as shown in the circuit diagram.

2. Keep output voltage VCE = 0V by varying VCC.
3. Varying VBB gradually, note down base current IB and base-emitter voltage VBE.
4. Step size is not fixed because of non linear curve. Initially vary VBB in steps of 0.1V.
Once the current starts increasing vary VBB in steps of 1V up to 12V.
5. Repeat above procedure (step 3) for VCE = 5V.

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 Analog Electronic Circuits Laboratory Manual [BEE303]

Output Characteristics:

1. Connect the circuit as shown in the circuit diagram.

2. Keep emitter current IB = 20 A by varying VBB.
3. Varying VCC gradually in steps of 1V up to 12V and note down collector current IC and
Collector-Emitter Voltage (VCE).
4. Repeat above procedure (step 3) for IB = 60µA, 0µA.

To Plot Graph:

1. Plot the input characteristics by taking VBE on X-axis and IB on Y-axis at a constant
VCE as a constant parameter.
2. Plot the output characteristics by taking VCE on X-axis and taking IC on Y-axis taking IB
as a constant parameter.

Calculations from Graph:

1. Input Characteristics: To obtain input resistance find VBE and IB for a constant VCE on
one of the input characteristics.
Input impedance = hie = Ri = VBE / IB (VCE is constant) Reverse
voltage gain = hre = VEB / VCE (IB = constant)
2. Output Characteristics: To obtain output resistance find IC and VCB at a constant IB.
Output admittance 1/hoe = Ro = IC / VCE (IB is constant)
Forward current gain = hfe = IC / IB (VCE = constant)

Result:

The h-parameters for a transistor in CE configuration are:

a. The Input Resistance (hie) Ohms.

b. The Reverse Voltage Gain (hre)

c. The Output Conductance (hoe) Mhos.

d. The Forward Current Gain (hfe) .

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 Analog Electronic Circuits Laboratory Manual [BEE303]
]

Aim: To study the input and output characteristics of a transistor in Common Base Configuration.

Apparatus Required:

S.No. Particulars Range Quantity

1 Transistor BC 107 1(One) No.
2 Resistors 1K 2(Two) No.
3 Bread board -- 1(One) No.
4 Dual DC Regulated Power supply (0 - 30 V) 1(One) No.
5 Digital Ammeters (0 - 200 mA, 0-200 1(One) No. Each
6 Digital Voltmeter (0 - 20V) 2(Two) No.
7 Connecting wires (Single Strand) -- Few.

Circuit Diagram:

h – Parameter model of CB transistor:

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 Analog Electronic Circuits Laboratory Manual [BEE303]

Observations:

Input Characteristics
VEE (Volts) VCB = 0V VCB = 4V
VEB (Volts) IE (mA) VEB (Volts) IE (mA)

Output Characteristics
VCC (Volts) IE = 0mA IE = 5V IE = 10mA
VCB (Volts) IC (mA) VCB (Volts) IC (mA) VCB (Volts) IC (mA)

Graph:

1. Plot the input characteristics for different values of VCB by taking VEE on X-axis and IE
on Y-axis taking VCB as constant parameter.
2. Plot the output characteristics by taking VCB on X-axis and taking IC on Y-axis taking
IE as a constant parameter.

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Procedure:

Input Characteristics:
1. Connect the circuit as shown in the circuit diagram.
2. Keep output voltage VCB = 0V by varying VCC.
3. Varying VEE gradually, note down emitter current IE and emitter-base voltage(VEE).
4. Step size is not fixed because of nonlinear curve. Initially vary VEE in steps of 0.1 V.
Once the current starts increasing vary VEE in steps of 1V up to 12V.
5. Repeat above procedure (step 3) for VCB = 4V.

Output Characteristics:
1. Connect the circuit as shown in the circuit diagram.
2. Keep emitter current IE = 5mA by varying VEE.
3. Varying VCC gradually in steps of 1V up to 12V and note down collector current IC and
collector-base voltage (VCB).
4. Repeat above procedure (step 3) for IE = 10mA. 5.
Repeat above procedure (step 3) for IE = 10mA.

Calculations from Graph:

The h-parameters are to be calculated from the following formulae:

1. Input Characteristics: To obtain input resistance, find VEE and IE for a constant
VCB on one of the input characteristics.
Input impedance = hib = Ri = VEE / IE (VCB = constant)
Reverse voltage gain = hrb = VEB / VCB (IE = constant)

2. Output Characteristics: To obtain output resistance, find IC and VCB at a

constant IE.

Output admittance = hob = 1/Ro = IC / VCB (IE = constant)

Forward current gain = hfb = IC / IE (VCB = constant)

Result:
The h-parameters for a transistor in CB configuration are:

a. The Input resistance (hib) Ohms.

b. The Reverse Voltage Transfer Ratio (hrb) .
c. The Output Admittance (hob) Mhos.
d. The Forward Current gain (hfb) .

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Aim: To study the input and output characteristics of a transistor in Common Collector
configuration.

Apparatus Required:

S.No. Particulars Range Quantity

1 Transistor BC 107 1(One) No.
2 Resistors 39K , 1K 1(One) No. Each
3 Bread board -- 1(One) No.
4 Dual DC Regulated Power supply (0 - 30 V) 1(One) No.
5 Digital Ammeters ( 0 – 300µA, 1(One) No. Each
0-10mA)
6 Digital Voltmeter (0-10V, 0-1V) 2(Two) No.
7 Connecting wires (Single Strand) -- Few.

Circuit Diagram:

h – Parameter model of CB transistor:

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Observations:

Input Characteristics
Sl. Applied VCE = 2V VCE = 5V VCE = 10V
No Voltage VBE (V) IB (µA) VBE (V) IB (µA) VBE (V) IB (µA)
VBB (V)
1
2
3
4
5

Output Characteristics
Sl. Applied IB = 10µA IB = 20µA IB = 30µA
No Voltage
VCC (V) VCE (V) IE (mA) VCE (V) IE (mA) VCE (V) IE (mA)
1
2
3
4
5

Graph:

1. Plot the input characteristics for different values of VCE by taking VBE on X-axis and
IB on Y-axis taking VCC as constant parameter.
2. Plot the output characteristics by taking VCE on X-axis and taking IC on Y-axis
taking IB as a constant parameter.

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Procedure:

Input Characteristics:
1. Connect the circuit as shown in the circuit diagram.
2. Keep output voltage VCE as constant 2V by varying VCC.
3. Varying VBB gradually, note down base current IB and emitter-base voltage (VBE).
4. Step size is not fixed because of nonlinear curve. Initially vary VEE in steps of 0.1 V.
Once the current starts increasing vary VBB in steps of 1V up to 12V.
5. Repeat above procedure (step 3) for VCE = 5V & 10V.

Output Characteristics:
1. Fix base current, IB at constant value say 10µA.
2. Vary the output voltage VCC in steps.
3. Measure the voltage VCE and current IC for different values.
4. Repeat above steps for IB = 20µA, 30µA
5. Draw output static characteristics for tabulated values.

Calculations from Graph:

The h-parameters are to be calculated from the following formulae:

1. Input Characteristics: To obtain input resistance, find VEE and IE for a constant VCB
on one of the input characteristics.

Input impedance = hic = Ri = VBB / IB (VCE = constant) Reverse

voltage gain = hrb = VCE / VBC (IB = constant)

2. Output Characteristics: To obtain output resistance, find IE and VCE at a

constant IB.

Output admittance = hoc = 1/Ro = IE / VCE (IB = constant) Forward

current gain = hfc = IE / IB (VCE = constant)

Result:
The h-parameters for a transistor in CC configuration are:
a. The Input resistance (hic) Ohms.
b. The Reverse Voltage Transfer Ratio (hrc) .
c. The Output Admittance (hoc) Mhos.
d. The Forward Current gain (hfc) .

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Experiment No: 4

RC – COUPLED SINGLE STAGE BJT AMPLIFIER

Aim: To find the Frequency response of single stage BJT and FET RC coupled amplifier
and determination of half power points, bandwidth, input and output impedances.

Apparatus Required:
S.No Particulars Range Quantity
1. Transistor SL100 01
2. Capacitors 0.47F 02
100F 01
3. Resistors 18k 01
3.9k 01
820k, 01
220k, 01
10k 01
4. Regulated Power Supply 0-32 V 01
5. Signal Generator --- 01
6. Oscilloscope and Probes --- 01
7. Bread Board --- 01
8. Connecting wires --- Few

Theory:

The R-C coupled amplifier is widely used as an audio amplifier because of it’s good frequency
response, low cost and simplicity. It is a transistor amplifier in the C-E configuration. The C-E
configuration is preferred because of its large voltage and current gains, medium input impedance
and medium output impedance. It consists of a collector resistance RC which is mainly responsible
for developing the output voltage. An emitter resistance RE which is used to provide operating point
stability. Resistor RB1 is a voltage divider bias resistor which provides the required reverse bias
voltage across collector base junction. RB2 is the second biasing resistor of the network which
provides the required forward bias voltage across base-emitter junction. Capacitor Cin is used to
couple the ASG to the amplifier ie. to isolate the ASG from the biasing network with respect to DC
conditions. Cout is a capacitor used to isolate the amplifier circuit from the load with respect to DC.
The bypass capacitor CE is used to provide a bypass path for AC signals and there by reduces the
current feedback which will reduce the amplifier gain considerably. The input signal is applied
between base and emitter so that it drives an AC base current. Due to transistor action, this input
current results in a collector current IC = βIB, where β is the current gain of transistor in common
emitter configuration. The output voltage is therefore amplified but suffers a phase shift of 180.

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The magnitude of the input signal should be such that the operating point always remain well within
the active region, if not the output waveform would be clipped (i.e the transistor is driven into
saturation or cut-off by positive and negative input peaks respectively).The coupling capacitor Cin
and Cout are mainly responsible for limiting the value of lower cut-off frequency (LCF→f1) while
the device junction capacitance is responsible for limiting the values of upper cut-off frequency
(UCF→f2).

Circuit Diagram:

Frequency Response:

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Design:

Let VCC =10V, IC = 5 mA, =100

To find RE :
VRE = VCC/10 = 10/10 = 1 IE.RE= 1V
RE= 1 V/ IE = 1V / Ic = 1V/5mA =200 
RE =200 
For RC, VCE= Vcc/2 = 10 /2 =5 V
Applying KVL in C-E Loop VCC –ICRC– VCE– VRE= 0
10 – 510–3RC – 5 –1= 0
RC= 800 
To find R1:
From the above biasing circuit
VB=VBE+VRE=0.7+1 = 1.7 V
Ic = .IB or IB = Ic/ = 500mA /100 = 0.5 mA
Assume that a current 10 IB flows through R2
R1= (VCC − VB)/ 10IB = (10−1.7)/ 10 0.5 = 16.6 
Choose R1 as 18k
Assuming 9IB flows through R2
R2 = VB / 9IB = {1.7/ 9} 0.5 = 3.7 k
Choose R2 as 3.9k
Bypass capacitor CE and coupling CC1
and CC4 Let XCE = RE.1/10 at f = 100Hz
i.e, 1/2fC = RE/10
CE= 10 / (2 x 100 x 220) = 72.3 F
Choose CE = 100 F CC1 = CC2 = 0.47 F

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Procedure:
1. Connect the biasing circuit as shown in the figure -2, set the RPS voltage Vcc = 12V.
Measure the DC voltages (Using Oscilloscope) VB at the base, VC at the collector and VE
at the emitter with respect to ground. Then determine
VCE = VC – VE = V
𝑉𝑐𝑐 −𝑉𝑐
IC = = mA (then Q point is given by VCE, IC)
𝑅𝑐
2. Connect the RC coupled amplifier circuit shown in figure-1.
3. Apply the input sine wave at frequency say 10KHz from the signal generator and adjust
peak–to-peak amplitude (Vi) of 20 to 50 milli volts (till maximum undistorted sine wave
output is obtained).
4. Vary the input sine wave frequency from 10Hz to 1MHz in suitable steps and measure the
output voltage V0 of the amplifier at each step using Oscilloscope(Keeping input
amplitude remains constant throughout the frequency range) and record the readings in the
tabular column.
5. Calculate the Gain in dB
6 Plot the graph of gain in dB v/s the frequency in semi log graph sheet and determine
lower cutoff frequency (f1), upper cutoff frequency (f2), mid band voltage gain Amid, and
gain bandwidth product (GBW).

Determination of Input Impedance (Zi) and Output Impedance (Z0)

Procedure: For measuring the input impedance “Zi‟

1. Connect the circuit as shown in fig.3
2. Set the following.
i) DRB to its minimum value “0‟
ii) Input sine wave amplitude is kept at 50mV.
iii) Frequency around 10 kHz.
iv) Measure p-p Vo
3.Let Vo = Va, Increase DRB till Vo = Va/2. So that the corresponding DRB value
gives the input impedance “Zi‟ of the RC Coupled amplifier.
Procedure: For measuring the output impedance “ZO‟
1. Connect the circuit as shown in fig.4
2. Set the following.
i. DRB to its Maximum value.
ii. Input sine wave amplitude is kept at 50mV
iii. Frequency around 10 kHz.

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iv. Measure p-p Vo

Let Vo = Vb, Decrease DRB till Vo = Vb/2
3. So that the corresponding DRB value gives the Output impedance “Zo‟ of the RC
Coupled amplifier

Observations:

Vin = 50 mV(p-p)
Gain in dB
Sl.No Freq in Hz Vo in Volts Av=Vo/Vin
20log Vo/Vin
1 200Hz
2 400Hz
3 600Hz
4 800Hz
5 1k
6 2k
7 3K
8 4K
9 5K
10 6K
11 7K
12 8K
13 9K
14 10K
15 30K
16 50K
17 70K
18 100K
19 300K
20 500K
21 700K
22 1MHz
23 1.5MHz
24 2MHz

Results:
• Mid band voltage gain =
• Mid band voltage gain in dB = dB
• Lower cutoff frequency = HZ
• Upper cutoff frequency = Hz
• Band width = Hz
• Gain Bandwidth Product = Hz
• Input Impedance = Ω
• Output Impedance = Ω

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Experiment No: 5
BJT RC PHASE SHIFT OSCILLATOR
Aim: To design and test the performance of RC Phase shift Oscillator for the given frequency of
oscillation.

Apparatus required:
S.No. Particulars Range Quantity
1. Transistor SL100 01
2. Capacitors 0.1F 01
0.01F 03
47F 01
3. Resistors 22 K 01
6.8 K 01
1 K 01
2.2 K 02
470  01
4. Regulated Power Supply 0-30V 01
5. Potentiometer 10 K 01
6. Oscilloscope and Probes --- 01
7 Bread Board -- 01
8 Connecting wires --- few

Theory:
The R-C phase shift oscillator is widely used to generate audio frequency oscillations.
Figure shows the circuit diagram of a R-C phase shift oscillator. It consists of a conventional R-C phase
shifting network (phase lead). The phase shift network consists of three sections R1C1, R2C2 and R3C3.
At some particular frequency the phase shift in each R-C sections 60 ie, the total phase shift produced by
the three stages R-C network is 180. The frequency of oscillation is given by: Fth = 1/(2RC6), where,
R1 = R2= R and C1 = C2 = C

Circuit diagram:

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Design:

Amplifier design:

Let VCC = 12V, IC = 4mA, hfe= 100 (for

SL100) Let VE = 2V, VCE = 6V
Therefore, RE = VE/IE = VE/IC = 2/4mA = 0.5 KΩ = 500Ω

Use RE = 470Ω
RC: From the biasing circuit (apply KVL to CE
loop) VCC- ICRC-VCE-VE = 0
12- 4RC-6-2 =0
Therefore RC = 1 KΩ

Calculation of R1 AND R2
From the biasing circuit
𝑅2
VB =VCC X
𝑅1 +𝑅2

We know that VB = VBE + VE

VB = 2 + 0.7 = 2.7V
Therefore VB = 𝑅2
𝑅1 +𝑅2
Vcc
2.7 = 𝑅2
12 𝑅1 +𝑅2
0.225 = R2
𝑅1 +𝑅2
0.225R1 +0.225R2 = R2
R1 = 3.44R2
If R2 = 6.8 KΩ, then R1 = 23.3KΩ, Use R1 = 22KΩ
Use CE = 50µF or 47 µF (Electrolytic)
Also use CC = 0.1µF (ceramic)
Design of RC shifting network
The frequency of oscillations is determined by phase shifting network. The oscillating
frequency for the above circuit is given by
1
f0 =
2RC 6 + 4K
R
Where K= C
R which is usually < 1
Let f0 = 2 KHz (Audio frequency range 20Hz to 20KHz) and R = 2.2 K

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RC 1K
Therefore K= = = 0.454
R 2.2K
1
Therefore fo =
2RC 6 + 4(0.454)

C = 0.0121 F; Use C = 0.01 F

Note:

The last resistor in the phase shifting network is chosen to be a 10K pot. This is to get
an overall phase shift of 180o at frequency of oscillations.
The minimum hfe required for the transistor to oscillate is
R RC
hfe(min) = 23 + 29 x +4x
RC R
Where RC = 1K and R = 2.2K (Phase shifting network)
2.2K 1K
Therefore hfe(min) = 23 + 29 x +4x
1K K
hfe(min) = 89

Procedure:
1. Connections are made as per the circuit diagram.
2. Switch ON the power supply and set the biasing voltage VCC =12V.
3. Adjust the 10KΩ pot to get a stable sinusoidal output and observe the sine wave form on
oscilloscope.
4. Measure the frequency of oscillations of the output from the oscilloscope, then compare
with theoretical value.
5. With respect to the output Vo, the waveforms at points TP1, TP2 and TP3, are observed
on oscilloscope. We can see the phase shift at each point being shifted by an angle 600,
1200, 1800.
6. Draw the waveform on graph sheet.

Result:
Theoretical frequency of oscillations = KHz
Practical frequency of oscillations = KHz

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Experiment No: 7

STUDY OF COLPITTS OSCILLATOR.

AIM:

To design and set up a Colpitts oscillator using BJT and toobserve the
sinusoidal output waveform.

APPARATUS REQUIRED:
S.NO APPARATUS SPECIFICATION QUANTITY
1. Transistor BC 107 1
2. Resistors 11.64 KΩ, Each 1
552.2Ω,10.02KΩ1.67kΩ
3. Capacitors 53.5nF,80µF, 100mF 2,1,1
4. Inductor 0.78mH 1
5. RPS ±12V 1
6. CRO 1MHz 1
7. Connecting wires - Req.

THEORY:

A Colpitts oscillator is the electrical dual of a Hartley oscillator, where the feedback signal is taken from
an "inductive" voltage divider consisting of two coils in series (or a tapped coil). Fig. 1 shows the
common-base Colpitts circuit. L and the series combination of C1 and C2 form the parallel resonant tank
circuit which determines the frequency of the oscillator. The voltage across C2 is applied to the base-
emitter junction of the transistor, as feedback to create oscillations. Fig. 2 shows the common-collector
version. Here the voltage across C1 provides feedback. The frequency of oscillation is approximately
the resonant frequency of the LC circuit, which is the series combination of the two capacitors in parallel
with the inductor

DESIGN PROCEDURE:

Select a appropriate transistor and note down its specification such as VCE,IC(MAX), hfe(min) and
Vbe(sat).

• VCC= VCEQ
• R2=S* RE
• VCC[R2/( R1+ R2)= VBE+VBE(SAT)
• VR1+VR2=VCC
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• hfe ≥ C1* C2/( C1+ C1)

• XCE ≤ RE/10

PROCEDURE:
• Hook up the circuit as shown in the circuit diagram.
• Switch on the power supply.
• Slight modification in value of C1 and C2 can be made to get perfect sine wave output.
• Observe the output waveform in CRO.

CIRCUIT DIAGRAM:

MODEL GRAPH:

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TABULATION:

Amplitude(Volts) Time(ms) Frequency (KHz)

RESULT: Thus the Colpitts oscillator was designed and its output waveform was verified.

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STUDY OF HARTLEY OSCILLATOR

To design and set up a Hartley oscillator using BJT and toobserve the
sinusoidal output waveform.
APPARATUS REQUIRED:
S.NO APPARATUS SPECIFICATION QUANTITY
1. Transistor BC 107 1
2. Resistors 2.74 KΩ, 1,2,1
1.76KΩ,10.58KΩ
3. Capacitors 0.1µF, 0.1µF Each 2
4. Inductor 0.1mH,0.33mH Each 1
5. RPS ±12V 1
6. CRO 1MHz 1
7. Connecting wires - Req.

THEORY:

The Hartley oscillator is an electronic oscillator circuit in which the oscillation frequency is
determined by a tuned circuit consisting of capacitors and inductors, that is, an LC oscillator. The
Hartley oscillator is distinguished by a tank circuit consisting of two series-connected coils (or, often,
a tapped coil) in parallel with a capacitor, with an amplifier between the relatively high impedance
across the entire LC tank and the relatively low voltage/high current point between the coils. The
Hartley oscillator is the dual of the Colpitts oscillator which uses a voltage divider made of two
capacitors rather than two inductors. Although there is no requirement for there to be mutual coupling
between the two coil segments, the circuit is usually implemented using a tapped coil, with the
feedback taken from the tap, as shown here. The optimal tapping point (or ratio of coil inductances)
depends on the amplifying device used, which may be a bipolar junction transistor.
DESIGN PROCEDURE:
Select a appropriate transistor and note down its specification such as VCE,IC(MAX), hfe(max) and
Vbe(sat).

• VCC= VCEQ+ ICQ(RC+RE)

• R2=S* RE
• VCC[R2/( R1+ R2)= VBE+VBE(SAT)
• VR1+VR2=VCC

PROCEDURE:

• Hook up the circuit as shown in the circuit diagram.

• Switch on the power supply.
• Slight modification in value of L1 and L2 can be made to get perfect sinewave output.
• Observe the output waveform in CRO.

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CIRCUIT DIAGRAM:

MODEL GRAPH:

TABULATION:

Amplitude(Volts) Time(ms) Frequency (KHz)

RESULT: Thus the Hartley oscillator was designed and its output waveform was verified.

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Experiment No: 8

DARLINGTON EMMITTER FOLLOWER

Aim: To determination of gain, input and output impedance of BJT Darlington emitter follower
with and without bootstrapping.

Apparatus Required:

S.N Particulars Range Quantity

1. Transistor SL100 01
2. Capacitors 0.1F 01
0.01F 03
47F 01
3. Resistors 22 K 01
6.8 K 01
1 K 01
2.2 K 02
470  01
4. Regulated Power Supply 0-30V 01
5. Signal Generator --- 01
6. Voltmeter --- 01
7. Ammeter --- 01
8. CRO and Probes --- 01
9. Bread Board -- 01
10. Connecting wires --- few

Theory:

A Darlington pair behaves like a single transistor, meaning it has one base, collector, and emitter. It
typically creates a high current gain (approximately the product of the gains of the two transistors,
due to the fact that their β values multiply together). A general relation between the compound
current gain and the individual gains is given by:

βDarlington = β1. β2+ β1+ β2

If β1 and β2 are high enough (hundreds), this relation can be approximated with:

βDarlington ≈ β1. β2

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Circuit Diagram:

Design:
Let VCC = 12 V D.C.; IC2 ≈ IE2 = 6mA, hfe1 = 50, hfe2 = 100;
Choose VCE2 = VCC / 2 = 12/2 = 6V;
IB2=IC2/hfe2 = 6000/100 = 60μA = IC1;
IB1 = IC1/hfe1= 60/50 = 1.2μA

RE = (VCC – VCE2)/IE2 =6V / 6mA = 1000 Ω

Assume R3 = 1K, then R3IB1 = 1.2 mV.

VAG = VAB1 + VBE1 + VBE2 + VE2

= R3IB1 + VBE1 + VBE2 + VE2
=1.2 mV + 0.7 V + 0.7 V + 6V
=7.4012 V

With R2 = 1 K, IR2 = VAG/R2 = 7.4012 mA=7401.2 μA, let R2 = 1 K

Therefore, IR1 = IR2 + IB1 =7401.2 + 1.2 = 7402.4 μA
R1= (VCC-VAG)/IR1 = 12-7.4012/7402.4 μA =621.258Ω; let R1 = 680 Ω
Choose CC1 = CC2 = 0.47 μF.

Procedure:
To measure Voltage Gain
1. Connect the circuit as shown in the figure
2. Switch on the power supply and set VCC = +12 V.
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3. Measure the DC Voltages using CRO or Multimeter and record.

VCE1 VBE1 VCE2 VBE2 VE2

Assumed 6V 0.7V 6V 0.7V 6V

Obtained

4. Apply a sine wave voltage from the Function Generator.

5. Observe the o/p Vo. Measure and record Vi and Vo. Compute and enter the voltage gain,
AV=VO/Vi in the table.

Voltage gain with bootstrap

Vi Vi, max

Vo

Av

Record Vi, Max, The maximum input you can apply for undistorted output as the
Maximum Signal handling capacity” of the Emitter follower.
6. Repeat the experiment after disconnecting the capacitor CB in branch AB, i.e.; just remove
the Bootstrapping capacitor, CB. Now you have taken away the Bootstrapping.

Voltage gain without bootstrap

Vi Vi, max

Vo

Av

To measure Input Impedance Zi:

1. Connect the circuit as shown below.

2. Set the DRB to minimum (0 Ω). Apply a10 KHz sine wave signal of amplitude 1V (p-p) or
any suitable value to get an undistorted output.
3. Measure VO (p-p). Let VO = Va (say) with DRB value = 0
4. Increase DRB value in steps till VO = VA/2. The corresponding DRB value gives ZI.
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5. Repeat the experiment by disconnecting CB, the bootstrapping capacitor.

6. Compare the two input impedance values you have measured.

To measure output impedance, Zo:

1. Connect the circuit as shown in figure

2. Set the DRB to its maximum resistance value. Apply a 10 KHz sine wave of amplitude 1V
(p-p) or any suitable value to get undistorted output
3. Measure VO (p-p), VO = VB without DRB connection or DRB value at Max.
4. Decrease DRB value in steps till VO = VB/2. The corresponding DRB value gives ZO.
5. In this part of the experiment, it is likely that the o/p wave form may get distorted as the DRB
value is decreased. Then, VI has to be set to a lower value and the steps to be repeated. Note
carefully that the answer will be wrong if you take readings with distorted output.
6. Repeat the experiment by disconnecting the Bootstrapping capacitor.

Result:
1. Voltage Gain with Boot Strap. : ……….
2. Voltage Gain with Boot Strap. : ……….
3. Input Impedance, Zi, with Bootstrap. : ……….
4. Input Impedance, Zi, without Bootstrap. : ……….
5. Output Impedance, Z0, with Bootstrap. : ………
6. Output Impedance, Z0, without Bootstrap. : ……….
7. Current Gain, Ai, With Bootstrap. : ………
8. Current Gain, Ai, Without Bootstrap. : ……….

Vi = Zi × Ii, Vo =Zo × Io, Ai = (Io/Ii) = AV × (Zi/Zo)

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